JP2007507101A - 半導体装置、半導体装置の製造方法、識別ラベル及び情報担体 - Google Patents

半導体装置、半導体装置の製造方法、識別ラベル及び情報担体 Download PDF

Info

Publication number
JP2007507101A
JP2007507101A JP2006527520A JP2006527520A JP2007507101A JP 2007507101 A JP2007507101 A JP 2007507101A JP 2006527520 A JP2006527520 A JP 2006527520A JP 2006527520 A JP2006527520 A JP 2006527520A JP 2007507101 A JP2007507101 A JP 2007507101A
Authority
JP
Japan
Prior art keywords
layer
substrate
semiconductor device
semiconductor
contact surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006527520A
Other languages
English (en)
Japanese (ja)
Inventor
ロナルド デッカー
セオドルス エム ミヒエルセン
アントーン エム エイチ トンビウル
ヨハン−ハインリヒ フォック
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV, Koninklijke Philips Electronics NV filed Critical Koninklijke Philips NV
Publication of JP2007507101A publication Critical patent/JP2007507101A/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30105Capacitance
JP2006527520A 2003-09-24 2004-09-02 半導体装置、半導体装置の製造方法、識別ラベル及び情報担体 Withdrawn JP2007507101A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP03103525 2003-09-24
PCT/IB2004/051676 WO2005029578A1 (fr) 2003-09-24 2004-09-02 Dispositif a semi-conducteurs, son procede de fabrication, etiquette d'identification et support d'informations

Publications (1)

Publication Number Publication Date
JP2007507101A true JP2007507101A (ja) 2007-03-22

Family

ID=34354579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006527520A Withdrawn JP2007507101A (ja) 2003-09-24 2004-09-02 半導体装置、半導体装置の製造方法、識別ラベル及び情報担体

Country Status (5)

Country Link
EP (1) EP1668694A1 (fr)
JP (1) JP2007507101A (fr)
KR (1) KR20060098432A (fr)
CN (1) CN1856875A (fr)
WO (1) WO2005029578A1 (fr)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8217381B2 (en) 2004-06-04 2012-07-10 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
JP2008502151A (ja) 2004-06-04 2008-01-24 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ 印刷可能半導体素子を製造して組み立てるための方法及びデバイス
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
JP4956128B2 (ja) 2006-10-02 2012-06-20 ルネサスエレクトロニクス株式会社 電子装置の製造方法
JP2008091638A (ja) 2006-10-02 2008-04-17 Nec Electronics Corp 電子装置およびその製造方法
JP2008091639A (ja) 2006-10-02 2008-04-17 Nec Electronics Corp 電子装置およびその製造方法
CN105826345B (zh) 2007-01-17 2018-07-31 伊利诺伊大学评议会 通过基于印刷的组装制造的光学系统
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US8372726B2 (en) 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
JP5646492B2 (ja) 2008-10-07 2014-12-24 エムシー10 インコーポレイテッドMc10,Inc. 伸縮可能な集積回路およびセンサアレイを有する装置
WO2010132552A1 (fr) 2009-05-12 2010-11-18 The Board Of Trustees Of The University Of Illinois Ensembles imprimés de diodes électroluminescentes inorganiques microscopiques ultraminces pour dispositifs d'affichage déformables et semi-transparents
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
WO2011084450A1 (fr) 2009-12-16 2011-07-14 The Board Of Trustees Of The University Of Illinois Électrophysiologie in vivo faisant intervenir des équipements électroniques conformes
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
CN102892356B (zh) 2010-03-17 2016-01-13 伊利诺伊大学评议会 基于生物可吸收基质的可植入生物医学装置
WO2012097163A1 (fr) 2011-01-14 2012-07-19 The Board Of Trustees Of The University Of Illinois Réseau de composants optiques ayant une courbure réglable
WO2012158709A1 (fr) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Barrettes de del à gestion thermique assemblées par impression
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
WO2012167096A2 (fr) 2011-06-03 2012-12-06 The Board Of Trustees Of The University Of Illinois Réseau d'électrodes de surface conformables, multiplexées de manière active et à haute densité, pour un interfaçage avec le cerveau
JP6231489B2 (ja) 2011-12-01 2017-11-15 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ プログラム可能な変化を被るように設計された遷移デバイス
EP2830492B1 (fr) 2012-03-30 2021-05-19 The Board of Trustees of the University of Illinois Dispositifs électroniques montables sur des appendices et conformables à des surfaces et procédé de fabrication correspondant
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
MX2017015587A (es) 2015-06-01 2018-08-23 Univ Illinois Metodo alternativo para sensor uv.
WO2016196675A1 (fr) 2015-06-01 2016-12-08 The Board Of Trustees Of The University Of Illinois Systèmes électroniques miniaturisés ayant des capacités de puissance sans fil et de communication en champ proche
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256562A (en) * 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5689136A (en) * 1993-08-04 1997-11-18 Hitachi, Ltd. Semiconductor device and fabrication method
JP3462166B2 (ja) * 2000-09-08 2003-11-05 富士通カンタムデバイス株式会社 化合物半導体装置

Also Published As

Publication number Publication date
EP1668694A1 (fr) 2006-06-14
KR20060098432A (ko) 2006-09-18
CN1856875A (zh) 2006-11-01
WO2005029578A1 (fr) 2005-03-31

Similar Documents

Publication Publication Date Title
JP2007507101A (ja) 半導体装置、半導体装置の製造方法、識別ラベル及び情報担体
US8619003B2 (en) Semiconductor device with wireless communication
US11678133B2 (en) Structure for integrated microphone
US8105873B2 (en) Flexible semiconductor device and identification label
JP5091150B2 (ja) 複数の半導体デバイス及びキャリア基板の製造方法
US8609538B2 (en) Methods relating to the fabrication of devices having conductive substrate vias with catch-pad etch-stops
US9034732B2 (en) Semiconductor-on-insulator with back side support layer
US9996725B2 (en) Under screen sensor assembly
TW200903898A (en) Semiconductor device and manufacturing method thereof
WO2009087296A3 (fr) Support de dispositif d'identification radiofréquence pour passeport et son procédé de fabrication
US9496227B2 (en) Semiconductor-on-insulator with back side support layer
JP3878288B2 (ja) 半導体装置及びその製造方法
JP5226228B2 (ja) 半導体装置の製造方法、及び、半導体装置
US20080217791A1 (en) Semiconductor device
JP2970411B2 (ja) 半導体装置
CN107481980A (zh) 一种薄型指纹芯片封装方法及封装结构
TW201232736A (en) Chip package and method for forming the same
US20230230961A1 (en) Ic package with multiple dies
CN117116913A (zh) 半导体结构、芯片的形成方法
US20060278976A1 (en) Semiconductor device, method and manufacturing same, identification label and information carrier
US20160343757A1 (en) Semiconductor device for optical applications and method of producing such a semiconductor device
JP2002026064A (ja) 半導体素子のボンディングパッド構造体及びその製造方法
JP3350405B2 (ja) 半導体装置
JP2006293873A (ja) 半導体装置
JP2006013140A (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
A300 Application deemed to be withdrawn because no request for examination was validly filed

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20071106