JP2007505997A - 長方形フィルター真空プラズマ源及び真空プラズマ流の制御方法 - Google Patents

長方形フィルター真空プラズマ源及び真空プラズマ流の制御方法 Download PDF

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Publication number
JP2007505997A
JP2007505997A JP2006527084A JP2006527084A JP2007505997A JP 2007505997 A JP2007505997 A JP 2007505997A JP 2006527084 A JP2006527084 A JP 2006527084A JP 2006527084 A JP2006527084 A JP 2006527084A JP 2007505997 A JP2007505997 A JP 2007505997A
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Prior art keywords
cathode
arc
magnetron
magnetic field
plasma
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JP2006527084A
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Japanese (ja)
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JP2007505997A5 (enExample
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ゴロコフスキー，ウラディミール，アイ．
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0647—Boron nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32614—Consumable cathodes for arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2006527084A 2003-09-18 2004-09-17 長方形フィルター真空プラズマ源及び真空プラズマ流の制御方法 Pending JP2007505997A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/667,279 US6929727B2 (en) 1999-04-12 2003-09-18 Rectangular cathodic arc source and method of steering an arc spot
PCT/US2004/030603 WO2005040451A1 (en) 2003-09-18 2004-09-17 Rectangular filtered vapor plasma source and method of controlling vapor plasma flow

Publications (2)

Publication Number Publication Date
JP2007505997A true JP2007505997A (ja) 2007-03-15
JP2007505997A5 JP2007505997A5 (enExample) 2007-09-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006527084A Pending JP2007505997A (ja) 2003-09-18 2004-09-17 長方形フィルター真空プラズマ源及び真空プラズマ流の制御方法

Country Status (5)

Country Link
US (3) US6929727B2 (enExample)
JP (1) JP2007505997A (enExample)
DE (1) DE112004001728T5 (enExample)
GB (1) GB2419897B (enExample)
WO (1) WO2005040451A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
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WO2011021281A1 (ja) * 2009-08-19 2011-02-24 日新電機株式会社 アーク蒸発源及び真空蒸着装置
JP2015086471A (ja) * 2013-10-28 2015-05-07 ベイパー テクノロジーズ、インコーポレイテッド 低圧アーク・プラズマ浸漬被膜気相堆積及びイオン処理
KR20190119096A (ko) * 2017-02-14 2019-10-21 오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘 소정의 캐소드 재료를 제거하는 캐소딕 아크 증발

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JPH101771A (ja) * 1996-06-12 1998-01-06 Nippon Seimitsu Kk アークイオンプレーティング装置
JP2002541335A (ja) * 1999-04-12 2002-12-03 ゴロコフスキー、ウラジミール・アイ 矩形陰極アーク源およびアークスポットの指向方法
JP2002371351A (ja) * 2001-06-14 2002-12-26 Hitachi Metals Ltd 皮膜形成装置

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WO2011021281A1 (ja) * 2009-08-19 2011-02-24 日新電機株式会社 アーク蒸発源及び真空蒸着装置
JP5494663B2 (ja) * 2009-08-19 2014-05-21 日新電機株式会社 アーク蒸発源及び真空蒸着装置
JP2015086471A (ja) * 2013-10-28 2015-05-07 ベイパー テクノロジーズ、インコーポレイテッド 低圧アーク・プラズマ浸漬被膜気相堆積及びイオン処理
KR20190119096A (ko) * 2017-02-14 2019-10-21 오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘 소정의 캐소드 재료를 제거하는 캐소딕 아크 증발
JP2020507677A (ja) * 2017-02-14 2020-03-12 エリコン サーフェス ソリューションズ アーゲー、 プフェフィコン 所定のカソード材料除去を伴うカソードアーク蒸発
JP7134980B2 (ja) 2017-02-14 2022-09-12 エリコン サーフェス ソリューションズ アーゲー、 プフェフィコン 所定のカソード材料除去を伴うカソードアーク蒸発
KR102536795B1 (ko) * 2017-02-14 2023-05-25 오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘 소정의 캐소드 재료를 제거하는 캐소딕 아크 증발

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US20040055538A1 (en) 2004-03-25
WO2005040451A1 (en) 2005-05-06
US6929727B2 (en) 2005-08-16
DE112004001728T5 (de) 2007-12-27
US20070029188A1 (en) 2007-02-08
GB2419897A (en) 2006-05-10
US20110100800A1 (en) 2011-05-05

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