JP2022515745A - プラズマ処理を実行するためのプラズマ源のための磁石構成 - Google Patents
プラズマ処理を実行するためのプラズマ源のための磁石構成 Download PDFInfo
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- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
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- C23C14/02—Pretreatment of the material to be coated
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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Abstract
Description
Claims (10)
- チャンバ壁によって囲まれたプラズマ処理エリアと、プラズマ源とを備える、プラズマ処理を実行するための真空チャンバであって、前記プラズマ源が、
前記真空チャンバ(100、200、300、400)に接続されたアーク・アノードを用いたカソード真空アーク蒸発のために前記真空チャンバ(100、200、300、400)中に構成された少なくとも1つのカソード(110、210、220、310、320、330、450)と、
前記カソードの前に構成され得るシールド(115、230、332、333、334)と、
前記真空チャンバ(100、200、300、400)中に構成された少なくとも1つの電極(30、120、120a、130、140、240、250、340、350、360、460、470)であって、前記カソード(110、210、220、310、320、330、450)から放出された電子を収集するための作業面(461)を備える、電極(30、120、120a、130、140、240、250、340、350、360、460、470)と
を備え、
前記作業面(461)が、前記カソード(110、210、220、310、320、330、450)から放出された前記電子を収集するための2次元表面であり、前記2次元表面が表面法線に対する第1の直交延長部と第2の直交延長部とを有し、前記第1の直交延長部が前記第2の直交延長部に直角であり、前記第2の直交延長部に対する前記第1の直交延長部の長さ比が0.1と1との間であり、
前記電極(30、120、120a、130、140、240、250、340、350、360、460、470)の前記作業面(461)に作用する、磁界を生成するための少なくとも1つの磁石(301、302、480、490)が、前記真空チャンバ(100、200、300、400)の中、又は上、又は中及び上に構成されたことを特徴とする、真空チャンバ。 - 前記磁石(301、302、480、490)が前側磁石(302)及び/又は後側磁石(301、480、490)を備え、前記前側磁石(302)が、前側磁界を生成するために前記作業面(461)のエリア中に構成され、前記後側磁石(301、480、490)が、後側磁界を生成するために前記作業面(461)の後ろに構成された、請求項1に記載の真空チャンバ。
- 前記前側磁石(302)が前記作業面(461)の前に構成され、及び/又は前記前側磁石(302)が少なくとも部分的に前記作業面(461)の隣又は周りに構成され、及び/又は、前記前側磁石(302)及び/又は前記後側磁石(301、480、490)が前記真空チャンバ(100、200、300、400)中に構成されるか、又は前記後側磁石(301、480、490)が前記真空チャンバ(100、200、300、400)の外側に構成された、請求項2に記載の真空チャンバ。
- 前記前側磁石(302)及び/又は前記後側磁石(301、480、490)が永久磁石及び/又は電磁石を備えるか、又は前記前側磁石(302)及び/又は前記後側磁石(301、480、490)が、前記電極(30、120、120a、130、140、240、250、340、350、360、460、470)に結合された電磁コイル(480、490)として設計された、請求項2又は3に記載の真空チャンバ。
- 前記カソード(110、210、220、310、320、330、450)から放出された前記電子を収集するための第1の作業面を有する第1の電極と、前記カソード(110、210、220、310、320、330、450)及び/又は複数のカソード(110、210、220、310、320、330、450)から放出された前記電子を収集するための第2の作業面を有する第2の電極とを備える、請求項1から4までのいずれか一項に記載の真空チャンバ。
- 複数の電極(30、120、120a、130、140、240、250、340、350、360、460、470)を備え、前記作業面(461)の前に構成された前記前側磁石(302)と、前記作業面(461)の後ろに構成された前記後側磁石(301、480、490)とが前記電極(30、120、120a、130、140、240、250、340、350、360、460、470)のうちの少なくとも1つの上に構成された、請求項2から5までのいずれか一項による真空チャンバ。
- 前記前側磁石(302)及び前記後側磁石(301、480、490)が電磁石であり、前記真空チャンバ(100、200、300、400)が、前記後側磁石(302)と前記前側磁石(301、480、490)とに接続された電流源をさらに備え、前記電流源は、前記後側磁石と前記前側磁石との極性が反転させられ得るように前記後側磁石(302)と前記前側磁石(301、480、490)とへの電流の流れが調整され得るような形で設計された、請求項2から6までのいずれか一項による真空チャンバ。
- 前記複数の電極(30、120、120a、130、140、240、250、340、350、360、460、470)が共通の電源に接続されるか、又は前記複数の電極(30、120、120a、130、140、240、250、340、350、360、460、470)が、第1の電源に接続された電極(30、120、120a、130、140、240、250、340、350、360、460、470)の第1のグループを備え、第2の電源に接続された電極(30、120、120a、130、140、240、250、340、350、360、460、470)の第2のグループを備える、請求項6又は7に記載の真空チャンバ。
- 前側磁界を生成するための第1の前側磁石が前記第1の作業面のエリア中、特に前記第1の作業面の前及び/又は隣及び/又は周りに構成され、第2の後側磁界を生成するための第2の後側磁石が前記第2の作業面の後ろに構成された、請求項5に記載の真空チャンバ。
- 前記電極(30、120、120a、130、140、240、250、340、350、360、460、470)上の垂直構成要素の磁界強度が0.1mTと100mTとの間、好ましくは1~50mT、特に2~20mTである、請求項1から9までのいずれか一項に記載の真空チャンバ。
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US201862783387P | 2018-12-21 | 2018-12-21 | |
US62/783,387 | 2018-12-21 | ||
CH00236/19 | 2019-02-26 | ||
CH00236/19A CH715878A1 (de) | 2019-02-26 | 2019-02-26 | Magnetanordnung für eine Plasmaquelle zur Durchführung von Plasmabehandlungen. |
PCT/EP2019/083898 WO2020126531A1 (de) | 2018-12-21 | 2019-12-05 | Magnetanordnung für eine plasmaquelle zur durchführung von plasmabehandlungen |
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US (1) | US11942311B2 (ja) |
EP (1) | EP3900011B1 (ja) |
JP (1) | JP2022515745A (ja) |
KR (1) | KR20210105398A (ja) |
CN (1) | CN113366601A (ja) |
CH (1) | CH715878A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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US5106474A (en) * | 1990-11-21 | 1992-04-21 | Viratec Thin Films, Inc. | Anode structures for magnetron sputtering apparatus |
DE4125365C1 (ja) | 1991-07-31 | 1992-05-21 | Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De | |
DE4203371C1 (ja) | 1992-02-06 | 1993-02-25 | Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De | |
US6929727B2 (en) * | 1999-04-12 | 2005-08-16 | G & H Technologies, Llc | Rectangular cathodic arc source and method of steering an arc spot |
DE10127013A1 (de) * | 2001-06-05 | 2002-12-12 | Gabriel Herbert M | Lichtbogen-Verdampfungsvorrichtung |
JP2003003251A (ja) * | 2001-06-20 | 2003-01-08 | Olympus Optical Co Ltd | 薄膜形成方法及び薄膜形成装置並びに蒸着源 |
US7059268B2 (en) | 2002-12-20 | 2006-06-13 | Tokyo Electron Limited | Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma |
US9997338B2 (en) | 2005-03-24 | 2018-06-12 | Oerlikon Surface Solutions Ag, Pfäffikon | Method for operating a pulsed arc source |
DE102009008161A1 (de) * | 2009-02-09 | 2010-08-12 | Oerlikon Trading Ag, Trübbach | Modifizierbare Magnetkonfiguration für Arc-Verdampfungsquellen |
JP5809476B2 (ja) * | 2011-07-29 | 2015-11-11 | 新明和工業株式会社 | 成膜装置および成膜方法 |
UA101443C2 (ru) * | 2011-11-29 | 2013-03-25 | Национальный Научный Центр "Харьковский Физико-Технический Институт" | Анодный УЗЕЛ вакуумно-дугового ИСТОЧНИКа катодной ПЛАЗМЫ |
JP5645806B2 (ja) | 2011-12-21 | 2014-12-24 | 正路 朝本 | 成膜装置及び成膜体の製造方法 |
DE102012024340A1 (de) | 2012-12-13 | 2014-06-18 | Oerlikon Trading Ag, Trübbach | Plasmaquelle |
EP2778253B1 (de) * | 2013-02-26 | 2018-10-24 | Oerlikon Surface Solutions AG, Pfäffikon | Zylinderförmige Verdampfungsquelle |
CN106661715B (zh) * | 2014-07-28 | 2019-11-19 | 日本Itf株式会社 | 碳薄膜、制造其的等离子体装置及制造方法 |
-
2019
- 2019-02-26 CH CH00236/19A patent/CH715878A1/de not_active Application Discontinuation
- 2019-12-05 JP JP2021535668A patent/JP2022515745A/ja active Pending
- 2019-12-05 CN CN201980091446.0A patent/CN113366601A/zh active Pending
- 2019-12-05 KR KR1020217022542A patent/KR20210105398A/ko active Search and Examination
- 2019-12-05 US US17/416,001 patent/US11942311B2/en active Active
- 2019-12-05 EP EP19817245.4A patent/EP3900011B1/de active Active
Also Published As
Publication number | Publication date |
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EP3900011B1 (de) | 2024-05-22 |
CN113366601A (zh) | 2021-09-07 |
CH715878A1 (de) | 2020-08-31 |
US20220051882A1 (en) | 2022-02-17 |
EP3900011A1 (de) | 2021-10-27 |
US11942311B2 (en) | 2024-03-26 |
KR20210105398A (ko) | 2021-08-26 |
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