JP2007329368A - 多層膜ミラー、評価方法、露光装置及びデバイス製造方法 - Google Patents

多層膜ミラー、評価方法、露光装置及びデバイス製造方法 Download PDF

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Publication number
JP2007329368A
JP2007329368A JP2006160512A JP2006160512A JP2007329368A JP 2007329368 A JP2007329368 A JP 2007329368A JP 2006160512 A JP2006160512 A JP 2006160512A JP 2006160512 A JP2006160512 A JP 2006160512A JP 2007329368 A JP2007329368 A JP 2007329368A
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JP
Japan
Prior art keywords
stress relaxation
multilayer mirror
relaxation layer
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006160512A
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English (en)
Japanese (ja)
Other versions
JP2007329368A5 (enExample
Inventor
Buntaro Masaki
文太郎 正木
Akira Miyake
明 三宅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2006160512A priority Critical patent/JP2007329368A/ja
Priority to KR1020070055918A priority patent/KR100877639B1/ko
Priority to TW096120781A priority patent/TW200807020A/zh
Priority to US11/760,155 priority patent/US7771898B2/en
Publication of JP2007329368A publication Critical patent/JP2007329368A/ja
Publication of JP2007329368A5 publication Critical patent/JP2007329368A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2006160512A 2006-06-09 2006-06-09 多層膜ミラー、評価方法、露光装置及びデバイス製造方法 Withdrawn JP2007329368A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006160512A JP2007329368A (ja) 2006-06-09 2006-06-09 多層膜ミラー、評価方法、露光装置及びデバイス製造方法
KR1020070055918A KR100877639B1 (ko) 2006-06-09 2007-06-08 다층막미러, 평가방법, 노광장치 및 디바이스 제조 방법
TW096120781A TW200807020A (en) 2006-06-09 2007-06-08 Multilayer mirror, evaluation method, exposure apparatus, device manufacturing method
US11/760,155 US7771898B2 (en) 2006-06-09 2007-06-08 Multilayer mirror, evaluation method, exposure apparatus, device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006160512A JP2007329368A (ja) 2006-06-09 2006-06-09 多層膜ミラー、評価方法、露光装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2007329368A true JP2007329368A (ja) 2007-12-20
JP2007329368A5 JP2007329368A5 (enExample) 2009-07-23

Family

ID=38822379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006160512A Withdrawn JP2007329368A (ja) 2006-06-09 2006-06-09 多層膜ミラー、評価方法、露光装置及びデバイス製造方法

Country Status (4)

Country Link
US (1) US7771898B2 (enExample)
JP (1) JP2007329368A (enExample)
KR (1) KR100877639B1 (enExample)
TW (1) TW200807020A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013542593A (ja) * 2010-09-27 2013-11-21 カール・ツァイス・エスエムティー・ゲーエムベーハー ミラー、当該ミラーを備える投影対物レンズ、及び当該投影対物レンズを備えるマイクロリソグラフィ用投影露光装置
JP2016005556A (ja) * 2015-07-23 2016-01-14 キヤノン株式会社 電気機械変換装置
JP2016195461A (ja) * 2016-07-28 2016-11-17 キヤノン株式会社 電気機械変換装置
JP2017506363A (ja) * 2014-01-30 2017-03-02 カール・ツァイス・エスエムティー・ゲーエムベーハー ミラー素子を製造する方法
JP2017216728A (ja) * 2017-07-31 2017-12-07 キヤノン株式会社 電気機械変換装置
JP2018035379A (ja) * 2016-08-29 2018-03-08 旭硝子株式会社 多層膜付基板およびその製造方法
JP2018522281A (ja) * 2015-07-15 2018-08-09 カール・ツァイス・エスエムティー・ゲーエムベーハー 特にマイクロリソグラフィ投影露光装置用のミラー

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090252977A1 (en) * 2008-04-07 2009-10-08 Canon Kabushiki Kaisha Multilayer film reflector
EP2283396B1 (en) * 2008-06-04 2013-03-13 ASML Netherlands BV Multilayer mirror and lithographic apparatus
DE102008042212A1 (de) 2008-09-19 2010-04-01 Carl Zeiss Smt Ag Reflektives optisches Element und Verfahren zu seiner Herstellung
DE102009017095A1 (de) * 2009-04-15 2010-10-28 Carl Zeiss Smt Ag Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
DE102009032779A1 (de) * 2009-07-10 2011-01-13 Carl Zeiss Smt Ag Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
EP2689427B1 (en) 2011-03-23 2017-05-03 Carl Zeiss SMT GmbH Euv mirror arrangement, optical system comprising euv mirror arrangement and method for operating an optical system comprising an euv mirror arrangement
DE102011077983A1 (de) * 2011-06-22 2012-12-27 Carl Zeiss Smt Gmbh Verfahren zur Herstellung eines reflektiven optischen Elements für die EUV-Lithographie
KR20150066966A (ko) * 2013-12-09 2015-06-17 삼성전자주식회사 포토마스크, 포토마스크의 에러 보정 방법, 포토마스크를 이용하여 제조된 집적회로 소자 및 그 제조 방법
DE102016207307A1 (de) * 2016-04-28 2017-11-02 Carl Zeiss Smt Gmbh Optisches Element und optische Anordnung damit
DE102016209273A1 (de) * 2016-05-30 2017-11-30 Carl Zeiss Smt Gmbh Spiegel für den euv-wellenlängenbereich
DE102016212373A1 (de) * 2016-07-07 2018-01-11 Carl Zeiss Smt Gmbh Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
US10468149B2 (en) * 2017-02-03 2019-11-05 Globalfoundries Inc. Extreme ultraviolet mirrors and masks with improved reflectivity
TW202144764A (zh) 2020-05-19 2021-12-01 台灣積體電路製造股份有限公司 用於評估基板上的薄膜厚度的方法
US11397078B2 (en) * 2020-05-19 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Thin film metrology
CN119001940A (zh) * 2024-08-15 2024-11-22 中国科学院半导体研究所 薄膜镜面及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6011646A (en) * 1998-02-20 2000-01-04 The Regents Of The Unviersity Of California Method to adjust multilayer film stress induced deformation of optics
US6134049A (en) 1998-09-25 2000-10-17 The Regents Of The University Of California Method to adjust multilayer film stress induced deformation of optics
KR20000024882A (ko) * 1998-10-02 2000-05-06 전주범 박막형 광로 조절 장치의 제조 방법
US6387572B1 (en) * 1999-09-13 2002-05-14 Intel Corporation Low CTE substrate for reflective EUV lithography
JP4320970B2 (ja) * 2001-04-11 2009-08-26 株式会社ニコン 多層膜反射鏡の製造方法
US6756163B2 (en) * 2002-06-27 2004-06-29 Intel Corporation Re-usable extreme ultraviolet lithography multilayer mask blank
US7056627B2 (en) * 2002-08-23 2006-06-06 Hoya Corporation Method of manufacturing a reflection type mask blank and method of manufacturing a reflection type mask
US7326502B2 (en) * 2003-09-18 2008-02-05 Intel Corporation Multilayer coatings for EUV mask substrates

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9575224B2 (en) 2010-09-27 2017-02-21 Carl Zeiss Smt Gmbh Mirror, projection objective with such mirror, and projection exposure apparatus for microlithography with such projection objective
JP2013542593A (ja) * 2010-09-27 2013-11-21 カール・ツァイス・エスエムティー・ゲーエムベーハー ミラー、当該ミラーを備える投影対物レンズ、及び当該投影対物レンズを備えるマイクロリソグラフィ用投影露光装置
US10423073B2 (en) 2014-01-30 2019-09-24 Carl Zeiss Smt Gmbh Method for producing a mirror element
JP2017506363A (ja) * 2014-01-30 2017-03-02 カール・ツァイス・エスエムティー・ゲーエムベーハー ミラー素子を製造する方法
JP2018522281A (ja) * 2015-07-15 2018-08-09 カール・ツァイス・エスエムティー・ゲーエムベーハー 特にマイクロリソグラフィ投影露光装置用のミラー
JP2016005556A (ja) * 2015-07-23 2016-01-14 キヤノン株式会社 電気機械変換装置
JP2016195461A (ja) * 2016-07-28 2016-11-17 キヤノン株式会社 電気機械変換装置
JP2018035379A (ja) * 2016-08-29 2018-03-08 旭硝子株式会社 多層膜付基板およびその製造方法
KR20180025217A (ko) * 2016-08-29 2018-03-08 아사히 가라스 가부시키가이샤 다층막 구비 기판의 제조 방법 및 다층막 구비 기판
US10775692B2 (en) 2016-08-29 2020-09-15 AGC Inc. Method for manufacturing multilayer film-deposited substrate and multilayer film-deposited substrate
TWI753933B (zh) * 2016-08-29 2022-02-01 日商Ａｇｃ股份有限公司 附有多層膜之基板之製造方法及附有多層膜之基板
KR102384692B1 (ko) 2016-08-29 2022-04-11 에이지씨 가부시키가이샤 다층막 구비 기판의 제조 방법 및 다층막 구비 기판
TWI800917B (zh) * 2016-08-29 2023-05-01 日商Ａｇｃ股份有限公司 附有多層膜之基板
JP2017216728A (ja) * 2017-07-31 2017-12-07 キヤノン株式会社 電気機械変換装置

Also Published As

Publication number Publication date
US7771898B2 (en) 2010-08-10
TW200807020A (en) 2008-02-01
KR20070118033A (ko) 2007-12-13
KR100877639B1 (ko) 2009-01-08
US20070287076A1 (en) 2007-12-13

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