TWI800917B - 附有多層膜之基板 - Google Patents

附有多層膜之基板 Download PDF

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Publication number
TWI800917B
TWI800917B TW110133185A TW110133185A TWI800917B TW I800917 B TWI800917 B TW I800917B TW 110133185 A TW110133185 A TW 110133185A TW 110133185 A TW110133185 A TW 110133185A TW I800917 B TWI800917 B TW I800917B
Authority
TW
Taiwan
Prior art keywords
substrate
multilayer film
multilayer
film
Prior art date
Application number
TW110133185A
Other languages
English (en)
Other versions
TW202147016A (zh
Inventor
石川祐之助
三上正樹
楜澤信
Original Assignee
日商Ａｇｃ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ａｇｃ股份有限公司 filed Critical 日商Ａｇｃ股份有限公司
Publication of TW202147016A publication Critical patent/TW202147016A/zh
Application granted granted Critical
Publication of TWI800917B publication Critical patent/TWI800917B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
    • G02B5/0875—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising two or more metallic layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optical Elements Other Than Lenses (AREA)
TW110133185A 2016-08-29 2017-08-03 附有多層膜之基板 TWI800917B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP??2016-166751 2016-08-29
JP2016166751A JP6597523B2 (ja) 2016-08-29 2016-08-29 多層膜付基板およびその製造方法

Publications (2)

Publication Number Publication Date
TW202147016A TW202147016A (zh) 2021-12-16
TWI800917B true TWI800917B (zh) 2023-05-01

Family

ID=61240520

Family Applications (2)

Application Number Title Priority Date Filing Date
TW110133185A TWI800917B (zh) 2016-08-29 2017-08-03 附有多層膜之基板
TW106126184A TWI753933B (zh) 2016-08-29 2017-08-03 附有多層膜之基板之製造方法及附有多層膜之基板

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW106126184A TWI753933B (zh) 2016-08-29 2017-08-03 附有多層膜之基板之製造方法及附有多層膜之基板

Country Status (4)

Country Link
US (1) US10775692B2 (zh)
JP (1) JP6597523B2 (zh)
KR (2) KR102384692B1 (zh)
TW (2) TWI800917B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11454878B2 (en) * 2017-06-21 2022-09-27 Hoya Corporation Substrate with multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007329368A (ja) * 2006-06-09 2007-12-20 Canon Inc 多層膜ミラー、評価方法、露光装置及びデバイス製造方法
US8956787B2 (en) * 2010-03-02 2015-02-17 Asahi Glass Company, Limited Reflective mask blank for EUV lithography and process for producing the same
TW201523120A (zh) * 2013-09-11 2015-06-16 Hoya Corp 附多層反射膜之基板、ｅｕｖ微影用反射型光罩基底、ｅｕｖ微影用反射型光罩及其製造方法、以及半導體裝置之製造方法
TW201616215A (zh) * 2014-10-21 2016-05-01 旭硝子股份有限公司 Ｅｕｖ微影術用反射型光罩基底及其製造方法、以及該光罩基底用之附反射層之基板及其製造方法
US20160181134A1 (en) * 2014-12-19 2016-06-23 Applied Materials, Inc. Monitoring system for deposition and method of operation thereof
JP2016139675A (ja) * 2015-01-27 2016-08-04 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクの製造方法、ならびに該マスクブランク用の反射層付基板の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1214718A4 (en) 1999-07-22 2006-08-23 Corning Inc EXTREMELY ULTRAVIOLET SOFT-ROENCH RADIATIONS LITHOGRAPHIC PROJECTION AND DEVICE AND LITHOGRAPHIC ELEMENTS
JP2014130976A (ja) 2012-12-29 2014-07-10 Hoya Corp 多層反射膜付き基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
JP2014130977A (ja) 2012-12-29 2014-07-10 Hoya Corp 多層反射膜付き基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007329368A (ja) * 2006-06-09 2007-12-20 Canon Inc 多層膜ミラー、評価方法、露光装置及びデバイス製造方法
US8956787B2 (en) * 2010-03-02 2015-02-17 Asahi Glass Company, Limited Reflective mask blank for EUV lithography and process for producing the same
TW201523120A (zh) * 2013-09-11 2015-06-16 Hoya Corp 附多層反射膜之基板、ｅｕｖ微影用反射型光罩基底、ｅｕｖ微影用反射型光罩及其製造方法、以及半導體裝置之製造方法
TW201616215A (zh) * 2014-10-21 2016-05-01 旭硝子股份有限公司 Ｅｕｖ微影術用反射型光罩基底及其製造方法、以及該光罩基底用之附反射層之基板及其製造方法
US20160181134A1 (en) * 2014-12-19 2016-06-23 Applied Materials, Inc. Monitoring system for deposition and method of operation thereof
JP2016139675A (ja) * 2015-01-27 2016-08-04 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクの製造方法、ならびに該マスクブランク用の反射層付基板の製造方法

Also Published As

Publication number Publication date
TW201812849A (zh) 2018-04-01
KR20220012364A (ko) 2022-02-03
KR102384692B1 (ko) 2022-04-11
KR20180025217A (ko) 2018-03-08
TWI753933B (zh) 2022-02-01
US20180059530A1 (en) 2018-03-01
JP2018035379A (ja) 2018-03-08
TW202147016A (zh) 2021-12-16
JP6597523B2 (ja) 2019-10-30
US10775692B2 (en) 2020-09-15

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