TW200807020A - Multilayer mirror, evaluation method, exposure apparatus, device manufacturing method - Google Patents
Multilayer mirror, evaluation method, exposure apparatus, device manufacturing method Download PDFInfo
- Publication number
- TW200807020A TW200807020A TW096120781A TW96120781A TW200807020A TW 200807020 A TW200807020 A TW 200807020A TW 096120781 A TW096120781 A TW 096120781A TW 96120781 A TW96120781 A TW 96120781A TW 200807020 A TW200807020 A TW 200807020A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- substrate
- multilayer mirror
- pressure compensation
- reflective layer
- Prior art date
Links
- 238000011156 evaluation Methods 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 238000000034 method Methods 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 description 50
- 235000012431 wafers Nutrition 0.000 description 28
- 238000005286 illumination Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000009826 distribution Methods 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 9
- 238000005498 polishing Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 238000012937 correction Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000004075 cariostatic agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- High Energy & Nuclear Physics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Optical Elements Other Than Lenses (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006160512A JP2007329368A (ja) | 2006-06-09 | 2006-06-09 | 多層膜ミラー、評価方法、露光装置及びデバイス製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200807020A true TW200807020A (en) | 2008-02-01 |
Family
ID=38822379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096120781A TW200807020A (en) | 2006-06-09 | 2007-06-08 | Multilayer mirror, evaluation method, exposure apparatus, device manufacturing method |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7771898B2 (enExample) |
| JP (1) | JP2007329368A (enExample) |
| KR (1) | KR100877639B1 (enExample) |
| TW (1) | TW200807020A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI452440B (zh) * | 2008-06-04 | 2014-09-11 | Asml Netherlands Bv | 多層鏡及微影裝置 |
| CN119001940A (zh) * | 2024-08-15 | 2024-11-22 | 中国科学院半导体研究所 | 薄膜镜面及其制备方法 |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090252977A1 (en) * | 2008-04-07 | 2009-10-08 | Canon Kabushiki Kaisha | Multilayer film reflector |
| DE102008042212A1 (de) | 2008-09-19 | 2010-04-01 | Carl Zeiss Smt Ag | Reflektives optisches Element und Verfahren zu seiner Herstellung |
| DE102009017095A1 (de) * | 2009-04-15 | 2010-10-28 | Carl Zeiss Smt Ag | Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
| DE102009032779A1 (de) * | 2009-07-10 | 2011-01-13 | Carl Zeiss Smt Ag | Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
| WO2012041697A1 (en) | 2010-09-27 | 2012-04-05 | Carl Zeiss Smt Gmbh | Mirror, projection objective comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective |
| EP2689427B1 (en) | 2011-03-23 | 2017-05-03 | Carl Zeiss SMT GmbH | Euv mirror arrangement, optical system comprising euv mirror arrangement and method for operating an optical system comprising an euv mirror arrangement |
| DE102011077983A1 (de) * | 2011-06-22 | 2012-12-27 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung eines reflektiven optischen Elements für die EUV-Lithographie |
| KR20150066966A (ko) * | 2013-12-09 | 2015-06-17 | 삼성전자주식회사 | 포토마스크, 포토마스크의 에러 보정 방법, 포토마스크를 이용하여 제조된 집적회로 소자 및 그 제조 방법 |
| DE102014201622A1 (de) | 2014-01-30 | 2015-08-20 | Carl Zeiss Smt Gmbh | Verfahren zum Herstellen eines Spiegelelements |
| DE102015213253A1 (de) * | 2015-07-15 | 2017-01-19 | Carl Zeiss Smt Gmbh | Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
| JP5980388B2 (ja) * | 2015-07-23 | 2016-08-31 | キヤノン株式会社 | 電気機械変換装置 |
| DE102016207307A1 (de) * | 2016-04-28 | 2017-11-02 | Carl Zeiss Smt Gmbh | Optisches Element und optische Anordnung damit |
| DE102016209273A1 (de) * | 2016-05-30 | 2017-11-30 | Carl Zeiss Smt Gmbh | Spiegel für den euv-wellenlängenbereich |
| DE102016212373A1 (de) * | 2016-07-07 | 2018-01-11 | Carl Zeiss Smt Gmbh | Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
| JP6186055B2 (ja) * | 2016-07-28 | 2017-08-23 | キヤノン株式会社 | 電気機械変換装置 |
| JP6597523B2 (ja) * | 2016-08-29 | 2019-10-30 | Ａｇｃ株式会社 | 多層膜付基板およびその製造方法 |
| US10468149B2 (en) * | 2017-02-03 | 2019-11-05 | Globalfoundries Inc. | Extreme ultraviolet mirrors and masks with improved reflectivity |
| JP6438544B2 (ja) * | 2017-07-31 | 2018-12-12 | キヤノン株式会社 | 電気機械変換装置 |
| TW202144764A (zh) | 2020-05-19 | 2021-12-01 | 台灣積體電路製造股份有限公司 | 用於評估基板上的薄膜厚度的方法 |
| US11397078B2 (en) * | 2020-05-19 | 2022-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thin film metrology |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6011646A (en) * | 1998-02-20 | 2000-01-04 | The Regents Of The Unviersity Of California | Method to adjust multilayer film stress induced deformation of optics |
| US6134049A (en) | 1998-09-25 | 2000-10-17 | The Regents Of The University Of California | Method to adjust multilayer film stress induced deformation of optics |
| KR20000024882A (ko) * | 1998-10-02 | 2000-05-06 | 전주범 | 박막형 광로 조절 장치의 제조 방법 |
| US6387572B1 (en) * | 1999-09-13 | 2002-05-14 | Intel Corporation | Low CTE substrate for reflective EUV lithography |
| JP4320970B2 (ja) * | 2001-04-11 | 2009-08-26 | 株式会社ニコン | 多層膜反射鏡の製造方法 |
| US6756163B2 (en) * | 2002-06-27 | 2004-06-29 | Intel Corporation | Re-usable extreme ultraviolet lithography multilayer mask blank |
| US7056627B2 (en) * | 2002-08-23 | 2006-06-06 | Hoya Corporation | Method of manufacturing a reflection type mask blank and method of manufacturing a reflection type mask |
| US7326502B2 (en) * | 2003-09-18 | 2008-02-05 | Intel Corporation | Multilayer coatings for EUV mask substrates |
-
2006
- 2006-06-09 JP JP2006160512A patent/JP2007329368A/ja not_active Withdrawn
-
2007
- 2007-06-08 US US11/760,155 patent/US7771898B2/en not_active Expired - Fee Related
- 2007-06-08 KR KR1020070055918A patent/KR100877639B1/ko not_active Expired - Fee Related
- 2007-06-08 TW TW096120781A patent/TW200807020A/zh unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI452440B (zh) * | 2008-06-04 | 2014-09-11 | Asml Netherlands Bv | 多層鏡及微影裝置 |
| CN119001940A (zh) * | 2024-08-15 | 2024-11-22 | 中国科学院半导体研究所 | 薄膜镜面及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7771898B2 (en) | 2010-08-10 |
| JP2007329368A (ja) | 2007-12-20 |
| KR20070118033A (ko) | 2007-12-13 |
| KR100877639B1 (ko) | 2009-01-08 |
| US20070287076A1 (en) | 2007-12-13 |
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