KR100877639B1 - 다층막미러, 평가방법, 노광장치 및 디바이스 제조 방법 - Google Patents

다층막미러, 평가방법, 노광장치 및 디바이스 제조 방법 Download PDF

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Publication number
KR100877639B1
KR100877639B1 KR1020070055918A KR20070055918A KR100877639B1 KR 100877639 B1 KR100877639 B1 KR 100877639B1 KR 1020070055918 A KR1020070055918 A KR 1020070055918A KR 20070055918 A KR20070055918 A KR 20070055918A KR 100877639 B1 KR100877639 B1 KR 100877639B1
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KR
South Korea
Prior art keywords
multilayer film
substrate
layer
stress compensation
film mirror
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Expired - Fee Related
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KR1020070055918A
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English (en)
Korean (ko)
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KR20070118033A (ko
Inventor
후미타로 마사키
아키라 미야케
Original Assignee
캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020070055918A 2006-06-09 2007-06-08 다층막미러, 평가방법, 노광장치 및 디바이스 제조 방법 Expired - Fee Related KR100877639B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006160512A JP2007329368A (ja) 2006-06-09 2006-06-09 多層膜ミラー、評価方法、露光装置及びデバイス製造方法
JPJP-P-2006-00160512 2006-06-09

Publications (2)

Publication Number Publication Date
KR20070118033A KR20070118033A (ko) 2007-12-13
KR100877639B1 true KR100877639B1 (ko) 2009-01-08

Family

ID=38822379

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070055918A Expired - Fee Related KR100877639B1 (ko) 2006-06-09 2007-06-08 다층막미러, 평가방법, 노광장치 및 디바이스 제조 방법

Country Status (4)

Country Link
US (1) US7771898B2 (enExample)
JP (1) JP2007329368A (enExample)
KR (1) KR100877639B1 (enExample)
TW (1) TW200807020A (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090252977A1 (en) * 2008-04-07 2009-10-08 Canon Kabushiki Kaisha Multilayer film reflector
EP2283396B1 (en) * 2008-06-04 2013-03-13 ASML Netherlands BV Multilayer mirror and lithographic apparatus
DE102008042212A1 (de) 2008-09-19 2010-04-01 Carl Zeiss Smt Ag Reflektives optisches Element und Verfahren zu seiner Herstellung
DE102009017095A1 (de) * 2009-04-15 2010-10-28 Carl Zeiss Smt Ag Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
DE102009032779A1 (de) * 2009-07-10 2011-01-13 Carl Zeiss Smt Ag Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
WO2012041697A1 (en) 2010-09-27 2012-04-05 Carl Zeiss Smt Gmbh Mirror, projection objective comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective
EP2689427B1 (en) 2011-03-23 2017-05-03 Carl Zeiss SMT GmbH Euv mirror arrangement, optical system comprising euv mirror arrangement and method for operating an optical system comprising an euv mirror arrangement
DE102011077983A1 (de) * 2011-06-22 2012-12-27 Carl Zeiss Smt Gmbh Verfahren zur Herstellung eines reflektiven optischen Elements für die EUV-Lithographie
KR20150066966A (ko) * 2013-12-09 2015-06-17 삼성전자주식회사 포토마스크, 포토마스크의 에러 보정 방법, 포토마스크를 이용하여 제조된 집적회로 소자 및 그 제조 방법
DE102014201622A1 (de) 2014-01-30 2015-08-20 Carl Zeiss Smt Gmbh Verfahren zum Herstellen eines Spiegelelements
DE102015213253A1 (de) * 2015-07-15 2017-01-19 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
JP5980388B2 (ja) * 2015-07-23 2016-08-31 キヤノン株式会社 電気機械変換装置
DE102016207307A1 (de) * 2016-04-28 2017-11-02 Carl Zeiss Smt Gmbh Optisches Element und optische Anordnung damit
DE102016209273A1 (de) * 2016-05-30 2017-11-30 Carl Zeiss Smt Gmbh Spiegel für den euv-wellenlängenbereich
DE102016212373A1 (de) * 2016-07-07 2018-01-11 Carl Zeiss Smt Gmbh Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
JP6186055B2 (ja) * 2016-07-28 2017-08-23 キヤノン株式会社 電気機械変換装置
JP6597523B2 (ja) * 2016-08-29 2019-10-30 Ａｇｃ株式会社 多層膜付基板およびその製造方法
US10468149B2 (en) * 2017-02-03 2019-11-05 Globalfoundries Inc. Extreme ultraviolet mirrors and masks with improved reflectivity
JP6438544B2 (ja) * 2017-07-31 2018-12-12 キヤノン株式会社 電気機械変換装置
TW202144764A (zh) 2020-05-19 2021-12-01 台灣積體電路製造股份有限公司 用於評估基板上的薄膜厚度的方法
US11397078B2 (en) * 2020-05-19 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Thin film metrology
CN119001940A (zh) * 2024-08-15 2024-11-22 中国科学院半导体研究所 薄膜镜面及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999042901A1 (en) * 1998-02-20 1999-08-26 The Regents Of The University Of California Method to adjust multilayer film stress induced deformation of optics
KR20000024882A (ko) * 1998-10-02 2000-05-06 전주범 박막형 광로 조절 장치의 제조 방법
WO2002084671A1 (en) * 2001-04-11 2002-10-24 Nikon Corporation Multi-layered film reflector manufacturing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6134049A (en) 1998-09-25 2000-10-17 The Regents Of The University Of California Method to adjust multilayer film stress induced deformation of optics
US6387572B1 (en) * 1999-09-13 2002-05-14 Intel Corporation Low CTE substrate for reflective EUV lithography
US6756163B2 (en) * 2002-06-27 2004-06-29 Intel Corporation Re-usable extreme ultraviolet lithography multilayer mask blank
US7056627B2 (en) * 2002-08-23 2006-06-06 Hoya Corporation Method of manufacturing a reflection type mask blank and method of manufacturing a reflection type mask
US7326502B2 (en) * 2003-09-18 2008-02-05 Intel Corporation Multilayer coatings for EUV mask substrates

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999042901A1 (en) * 1998-02-20 1999-08-26 The Regents Of The University Of California Method to adjust multilayer film stress induced deformation of optics
KR20000024882A (ko) * 1998-10-02 2000-05-06 전주범 박막형 광로 조절 장치의 제조 방법
WO2002084671A1 (en) * 2001-04-11 2002-10-24 Nikon Corporation Multi-layered film reflector manufacturing method

Also Published As

Publication number Publication date
US7771898B2 (en) 2010-08-10
TW200807020A (en) 2008-02-01
JP2007329368A (ja) 2007-12-20
KR20070118033A (ko) 2007-12-13
US20070287076A1 (en) 2007-12-13

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