JP2007329368A5 - - Google Patents

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Publication number
JP2007329368A5
JP2007329368A5 JP2006160512A JP2006160512A JP2007329368A5 JP 2007329368 A5 JP2007329368 A5 JP 2007329368A5 JP 2006160512 A JP2006160512 A JP 2006160512A JP 2006160512 A JP2006160512 A JP 2006160512A JP 2007329368 A5 JP2007329368 A5 JP 2007329368A5
Authority
JP
Japan
Prior art keywords
stress relaxation
substrate
multilayer mirror
reflective layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006160512A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007329368A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006160512A priority Critical patent/JP2007329368A/ja
Priority claimed from JP2006160512A external-priority patent/JP2007329368A/ja
Priority to KR1020070055918A priority patent/KR100877639B1/ko
Priority to TW096120781A priority patent/TW200807020A/zh
Priority to US11/760,155 priority patent/US7771898B2/en
Publication of JP2007329368A publication Critical patent/JP2007329368A/ja
Publication of JP2007329368A5 publication Critical patent/JP2007329368A5/ja
Withdrawn legal-status Critical Current

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JP2006160512A 2006-06-09 2006-06-09 多層膜ミラー、評価方法、露光装置及びデバイス製造方法 Withdrawn JP2007329368A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006160512A JP2007329368A (ja) 2006-06-09 2006-06-09 多層膜ミラー、評価方法、露光装置及びデバイス製造方法
KR1020070055918A KR100877639B1 (ko) 2006-06-09 2007-06-08 다층막미러, 평가방법, 노광장치 및 디바이스 제조 방법
TW096120781A TW200807020A (en) 2006-06-09 2007-06-08 Multilayer mirror, evaluation method, exposure apparatus, device manufacturing method
US11/760,155 US7771898B2 (en) 2006-06-09 2007-06-08 Multilayer mirror, evaluation method, exposure apparatus, device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006160512A JP2007329368A (ja) 2006-06-09 2006-06-09 多層膜ミラー、評価方法、露光装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2007329368A JP2007329368A (ja) 2007-12-20
JP2007329368A5 true JP2007329368A5 (enExample) 2009-07-23

Family

ID=38822379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006160512A Withdrawn JP2007329368A (ja) 2006-06-09 2006-06-09 多層膜ミラー、評価方法、露光装置及びデバイス製造方法

Country Status (4)

Country Link
US (1) US7771898B2 (enExample)
JP (1) JP2007329368A (enExample)
KR (1) KR100877639B1 (enExample)
TW (1) TW200807020A (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090252977A1 (en) * 2008-04-07 2009-10-08 Canon Kabushiki Kaisha Multilayer film reflector
EP2283396B1 (en) * 2008-06-04 2013-03-13 ASML Netherlands BV Multilayer mirror and lithographic apparatus
DE102008042212A1 (de) 2008-09-19 2010-04-01 Carl Zeiss Smt Ag Reflektives optisches Element und Verfahren zu seiner Herstellung
DE102009017095A1 (de) * 2009-04-15 2010-10-28 Carl Zeiss Smt Ag Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
DE102009032779A1 (de) * 2009-07-10 2011-01-13 Carl Zeiss Smt Ag Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
WO2012041697A1 (en) 2010-09-27 2012-04-05 Carl Zeiss Smt Gmbh Mirror, projection objective comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective
EP2689427B1 (en) 2011-03-23 2017-05-03 Carl Zeiss SMT GmbH Euv mirror arrangement, optical system comprising euv mirror arrangement and method for operating an optical system comprising an euv mirror arrangement
DE102011077983A1 (de) * 2011-06-22 2012-12-27 Carl Zeiss Smt Gmbh Verfahren zur Herstellung eines reflektiven optischen Elements für die EUV-Lithographie
KR20150066966A (ko) * 2013-12-09 2015-06-17 삼성전자주식회사 포토마스크, 포토마스크의 에러 보정 방법, 포토마스크를 이용하여 제조된 집적회로 소자 및 그 제조 방법
DE102014201622A1 (de) 2014-01-30 2015-08-20 Carl Zeiss Smt Gmbh Verfahren zum Herstellen eines Spiegelelements
DE102015213253A1 (de) * 2015-07-15 2017-01-19 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
JP5980388B2 (ja) * 2015-07-23 2016-08-31 キヤノン株式会社 電気機械変換装置
DE102016207307A1 (de) * 2016-04-28 2017-11-02 Carl Zeiss Smt Gmbh Optisches Element und optische Anordnung damit
DE102016209273A1 (de) * 2016-05-30 2017-11-30 Carl Zeiss Smt Gmbh Spiegel für den euv-wellenlängenbereich
DE102016212373A1 (de) * 2016-07-07 2018-01-11 Carl Zeiss Smt Gmbh Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
JP6186055B2 (ja) * 2016-07-28 2017-08-23 キヤノン株式会社 電気機械変換装置
JP6597523B2 (ja) * 2016-08-29 2019-10-30 Ａｇｃ株式会社 多層膜付基板およびその製造方法
US10468149B2 (en) * 2017-02-03 2019-11-05 Globalfoundries Inc. Extreme ultraviolet mirrors and masks with improved reflectivity
JP6438544B2 (ja) * 2017-07-31 2018-12-12 キヤノン株式会社 電気機械変換装置
TW202144764A (zh) 2020-05-19 2021-12-01 台灣積體電路製造股份有限公司 用於評估基板上的薄膜厚度的方法
US11397078B2 (en) * 2020-05-19 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Thin film metrology
CN119001940A (zh) * 2024-08-15 2024-11-22 中国科学院半导体研究所 薄膜镜面及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6011646A (en) * 1998-02-20 2000-01-04 The Regents Of The Unviersity Of California Method to adjust multilayer film stress induced deformation of optics
US6134049A (en) 1998-09-25 2000-10-17 The Regents Of The University Of California Method to adjust multilayer film stress induced deformation of optics
KR20000024882A (ko) * 1998-10-02 2000-05-06 전주범 박막형 광로 조절 장치의 제조 방법
US6387572B1 (en) * 1999-09-13 2002-05-14 Intel Corporation Low CTE substrate for reflective EUV lithography
JP4320970B2 (ja) * 2001-04-11 2009-08-26 株式会社ニコン 多層膜反射鏡の製造方法
US6756163B2 (en) * 2002-06-27 2004-06-29 Intel Corporation Re-usable extreme ultraviolet lithography multilayer mask blank
US7056627B2 (en) * 2002-08-23 2006-06-06 Hoya Corporation Method of manufacturing a reflection type mask blank and method of manufacturing a reflection type mask
US7326502B2 (en) * 2003-09-18 2008-02-05 Intel Corporation Multilayer coatings for EUV mask substrates

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