JP2007242692A - 光学装置および光学装置の製造方法 - Google Patents
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- 230000003287 optical effect Effects 0.000 title claims abstract description 85
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 230000002093 peripheral effect Effects 0.000 claims abstract description 4
- 238000007789 sealing Methods 0.000 claims description 90
- 238000000034 method Methods 0.000 claims description 28
- 239000011347 resin Substances 0.000 claims description 28
- 229920005989 resin Polymers 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 24
- 239000000853 adhesive Substances 0.000 claims description 18
- 230000001070 adhesive effect Effects 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 15
- 238000000465 moulding Methods 0.000 claims description 15
- 238000013459 approach Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 abstract description 76
- 230000035945 sensitivity Effects 0.000 abstract description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 9
- 239000011889 copper foil Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000007747 plating Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 206010034960 Photophobia Diseases 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
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Abstract
【解決手段】撮像装置1は、基板11と、基板11の上面の中央に実装された撮像素子21と、撮像素子21の上に接着して設けられた透光性部材27と、基板11の上面の周縁に設けられ、撮像素子21と電気的に接続されている複数の第1端子部13,13,…と、基板の上面に設けられ光学素子21を封止する封止部29とを備えている。封止部29は、透光性部材27の上面27aよりも下方に位置している。透光性部材27の上面27aは封止部29から露出している一方、透光性部材27の側面は封止部29に封止されている。
【選択図】図2
Description
実施形態1では、光学素子として撮像素子を例に挙げ光学装置として撮像装置を例に挙げて、撮像装置の構成および製造方法を示す。
図9は、実施形態2にかかる光学装置の製造方法の一部を示す断面図である。
図10は、実施形態3にかかる撮像装置3の構成を示す断面図である。
図11は、実施形態4にかかる撮像装置4の構成を示す断面図である。
本発明の構成は、以下のような構成としてもよい。
11,51 基板
13,53 第1端子部
15,55 第2端子部
17 貫通導体部
21 撮像素子(光学素子)
23 導電性細線
27,47 透光性部材
27a 上面
29 封止部
29a 窪み部
31 封止用フィルム
33 第1中間体
35 第2中間体
37 成形用型
37a 内壁面
111 母材基板
Claims (11)
- 基板と、
前記基板の一方の面の中央に実装され、受光または発光する光学素子と、
前記基板に対して前記光学素子とは反対側に、該光学素子に接着されて設けられている板状の透光性部材と、
前記基板の一方の面の周縁に設けられ、前記光学素子と電気的に接続されている複数の端子部と、
前記基板の一方の面の上に設けられ、前記光学素子を封止する封止部と
を備え、
前記封止部は、前記透光性部材の上面よりも下方に存在しており、
前記透光性部材の上面は前記封止部から露出している一方、該透光性部材の側面は該封止部に封止されていることを特徴とする光学装置。 - 前記透光性部材を囲む封止部の上面には、該封止部の上面から前記基板側に窪む窪み部が存在していることを特徴とする請求項1に記載の光学装置。
- 前記封止部は、前記透光性部材の側面全体を覆っており、
前記透光性部材を囲む封止部の上面は、該透光性部材から遠ざかるにつれて前記基板に近づくことを特徴とする請求項1に記載の光学装置。 - 前記封止部の上面の算術平均粗さは、封止部の側面の算術平均粗さよりも小さいことを特徴とする請求項1から3の何れか1つに記載の光学装置。
- 前記透光性部材は、透光性接着剤を介して前記光学素子に接着されていることを特徴とする請求項1から4の何れか1つに記載の光学装置。
- 前記光学素子は、受光した光を電気信号に変換する撮像素子であり、
前記撮像素子の上面には、光を該撮像素子内に集光させるレンズが設けられており、
前記レンズの屈折率は、前記透光性接着剤の屈折率よりも高いことを特徴とする請求項5に記載の光学装置。 - 前記複数の端子部は、複数の第1端子部と、該複数の第1端子部にそれぞれ電気的に接続された複数の第2端子部とで構成されており、
前記基板の厚み方向には、複数の貫通導体部が貫設されており、
前記複数の第1端子部は、それぞれ、前記貫通導体部から前記基板の一方の面の中央に向かって該一方の面上に延びて設けられているとともに、複数の導電性細線を介して前記光学素子に電気的に接続されており、
前記複数の第2端子部は、それぞれ、前記基板の他方の面上に延びて設けられているとともに、前記貫通導体部に電気的に接続していることを特徴とする請求項1から6の何れか1つに記載の光学装置。 - 受光または発光する光学素子を有する光学装置の製造方法であって、
基板の一方の面の周縁に複数の端子部を設ける配線工程と、
前記基板の一方の面の中央に、前記光学素子および板状の透光性部材をこの順に積み重ねて固定し、前記複数の端子部を該光学素子に電気的に接続して第1中間体を形成する工程と、
前記基板に対して略平行に延びるようにして前記透光性部材の上に封止用フィルムを置く工程と、
前記透光性部材の上に置かれた封止用フィルムと該基板との間に樹脂を注入して、前記光学素子を封止する封止工程と、
前記封止工程の後、前記封止用フィルムを前記透光性部材から取り去る除去工程と
を備えていることを特徴とする光学装置の製造方法。 - 前記封止用フィルムを置く工程は、
前記封止用フィルムを前記第1中間体の前記透光性部材の上に置いて第2中間体をつくる工程と、
前記第2中間体をキャビティ内に置き、該第2中間体の前記封止用フィルムを成形用型のキャビティの内壁面に当接させる工程と
を有していることを特徴とする請求項8に記載の光学装置の製造方法。 - 前記封止用フィルムを置く工程は、
成形用型のキャビティの内壁面に封止用フィルムを取り付ける工程と、
前記第1中間体を前記キャビティ内に置き、該キャビティの内壁面に取り付けられた封止用フィルムを該第1中間体の基板に対して略平行に配置するとともに該第1中間体の透光性部材に当接させる工程と
を有していることを特徴とする請求項8に記載の光学装置の製造方法。 - 前記配線工程では、一方の面に複数の領域が形成された母材基板を前記基板として用い、該領域内のそれぞれに複数の前記端子部を配線し、
前記第1中間体を形成する工程では、前記領域内のそれぞれにおいて、前記母材基板の一方の面に前記光学素子および前記透光性部材をこの順に積み重ねるとともに前記複数の端子部を該光学素子にそれぞれ接続し、
前記除去工程の後、前記母材基板を前記領域ごとに分割して一枚の該母材基板から複数個の光学装置を製造する分割工程をさらに備えていることを特徴とする請求項8から10の何れか1つに記載の光学装置の製造方法。
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JP2006059525A JP2007242692A (ja) | 2006-03-06 | 2006-03-06 | 光学装置および光学装置の製造方法 |
CN200710005406.9A CN101034688A (zh) | 2006-03-06 | 2007-02-08 | 光学装置及光学装置的制造方法 |
US11/708,472 US20070206455A1 (en) | 2006-03-06 | 2007-02-21 | Optical device and method for manufacturing the same |
US12/970,407 US20110083322A1 (en) | 2006-03-06 | 2010-12-16 | Optical device and method for manufacturing the same |
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Cited By (3)
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EP1930977A1 (en) | 2006-12-08 | 2008-06-11 | Nissan Motor Co., Ltd. | Bipolar Battery and Method of Manufacturing the Same |
JP2010027821A (ja) * | 2008-07-18 | 2010-02-04 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
JP2011067411A (ja) * | 2009-09-25 | 2011-04-07 | Fujifilm Corp | 撮像装置及び内視鏡 |
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JP2010166021A (ja) * | 2008-12-18 | 2010-07-29 | Panasonic Corp | 半導体装置及びその製造方法 |
US9258467B2 (en) * | 2013-11-19 | 2016-02-09 | Stmicroelectronics Pte Ltd. | Camera module |
JP7271337B2 (ja) * | 2019-06-27 | 2023-05-11 | 新光電気工業株式会社 | 電子部品装置及び電子部品装置の製造方法 |
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2007
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- 2007-02-21 US US11/708,472 patent/US20070206455A1/en not_active Abandoned
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2010
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JP2003197885A (ja) * | 2001-12-27 | 2003-07-11 | Seiko Epson Corp | 光デバイス及びその製造方法、光モジュール、回路基板並びに電子機器 |
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JP2010027821A (ja) * | 2008-07-18 | 2010-02-04 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
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Also Published As
Publication number | Publication date |
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CN101034688A (zh) | 2007-09-12 |
US20070206455A1 (en) | 2007-09-06 |
US20110083322A1 (en) | 2011-04-14 |
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