JP2007241999A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2007241999A
JP2007241999A JP2007019143A JP2007019143A JP2007241999A JP 2007241999 A JP2007241999 A JP 2007241999A JP 2007019143 A JP2007019143 A JP 2007019143A JP 2007019143 A JP2007019143 A JP 2007019143A JP 2007241999 A JP2007241999 A JP 2007241999A
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Japan
Prior art keywords
layer
integrated circuit
substrate
semiconductor integrated
semiconductor
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JP2007019143A
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English (en)
Japanese (ja)
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JP2007241999A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Koji Oriki
浩二 大力
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
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Priority to JP2007019143A priority Critical patent/JP2007241999A/ja
Publication of JP2007241999A publication Critical patent/JP2007241999A/ja
Publication of JP2007241999A5 publication Critical patent/JP2007241999A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2007019143A 2006-02-08 2007-01-30 半導体装置 Withdrawn JP2007241999A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007019143A JP2007241999A (ja) 2006-02-08 2007-01-30 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006031720 2006-02-08
JP2007019143A JP2007241999A (ja) 2006-02-08 2007-01-30 半導体装置

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JP2007241999A true JP2007241999A (ja) 2007-09-20
JP2007241999A5 JP2007241999A5 (enExample) 2010-03-11

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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283793A (ja) * 2008-05-23 2009-12-03 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2009283777A (ja) * 2008-05-23 2009-12-03 Semiconductor Energy Lab Co Ltd 半導体装置
EP2131394A1 (en) 2008-06-06 2009-12-09 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
JP2010016362A (ja) * 2008-06-06 2010-01-21 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
WO2010032602A1 (en) * 2008-09-18 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2010035627A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2010035625A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semi conductor device
JP2010109351A (ja) * 2008-10-01 2010-05-13 Semiconductor Energy Lab Co Ltd 半導体装置
KR101022493B1 (ko) * 2008-11-28 2011-03-16 고려대학교 산학협력단 Ｃｎｔ 박막트랜지스터 및 이를 적용하는 디스플레이
US8148818B2 (en) 2008-05-23 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8169588B2 (en) 2008-07-10 2012-05-01 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US8237248B2 (en) 2008-05-23 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8264144B2 (en) 2008-07-10 2012-09-11 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device utilizing fibrous barrier layers impregnated with organic resin
US8284369B2 (en) 2008-08-20 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Flexible light-emitting device, and method for fabricating the same
US8384209B2 (en) 2008-05-12 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2013150014A (ja) * 2013-05-07 2013-08-01 Semiconductor Energy Lab Co Ltd 半導体装置
US8552498B2 (en) 2008-09-19 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8609464B2 (en) 2008-06-06 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Method for shielding semiconductor device
KR101737053B1 (ko) * 2010-12-31 2017-05-18 삼성전자주식회사 반도체 패키지

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0874193A (ja) * 1994-09-05 1996-03-19 Achilles Corp 導電紙
JPH10109483A (ja) * 1996-10-04 1998-04-28 Hokuetsu Paper Mills Ltd Ｉｃカード
JPH10198778A (ja) * 1997-01-14 1998-07-31 Rohm Co Ltd Ｉｃカード
JPH11185523A (ja) * 1997-12-22 1999-07-09 Mitsubishi Rayon Co Ltd 導電性被覆用水性樹脂組成物
JP2000006523A (ja) * 1998-06-24 2000-01-11 Dainippon Printing Co Ltd 熱転写シート及びそれを用いたｉｃカード
JP2000299411A (ja) * 1999-02-10 2000-10-24 Hitachi Maxell Ltd チップ実装体及びその製造方法
JP2002517870A (ja) * 1998-06-09 2002-06-18 モトローラ・インコーポレイテッド 製品一体型のアンテナを有する無線周波数識別タグ
JP2002319006A (ja) * 2001-04-19 2002-10-31 Tokushu Paper Mfg Co Ltd 偽造防止用スレッド、それを用いた偽造防止用シート状物および偽造防止用シート状物の製造方法
JP2003099744A (ja) * 2001-09-25 2003-04-04 Nec Tokin Corp Ｉｃモジュール及びｉｃカード
JP2003283120A (ja) * 2002-03-25 2003-10-03 Toppan Forms Co Ltd 導電接続部同士の接続方法
JP2004532313A (ja) * 2001-04-06 2004-10-21 キャボット　コーポレイション 導電性ポリマー組成物及びそれを含有する製品
WO2005044451A1 (en) * 2003-10-29 2005-05-19 Conductive Inkjet Technology Limited Electrical connection of components
JP2005174220A (ja) * 2003-12-15 2005-06-30 Konica Minolta Photo Imaging Inc Ｉｃカード及びｉｃカードの製造方法
JP2005183741A (ja) * 2003-12-19 2005-07-07 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2005252242A (ja) * 2004-02-06 2005-09-15 Semiconductor Energy Lab Co Ltd 薄膜集積回路の作製方法、及び素子基板
JP2005268271A (ja) * 2004-03-16 2005-09-29 Shimadzu Corp 光または放射線用二次元検出器
JP2005531809A (ja) * 2002-06-28 2005-10-20 アップルトン　ペーパーズ　インコーポレイテッド 感熱式画像形成紙積層体

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0874193A (ja) * 1994-09-05 1996-03-19 Achilles Corp 導電紙
JPH10109483A (ja) * 1996-10-04 1998-04-28 Hokuetsu Paper Mills Ltd Ｉｃカード
JPH10198778A (ja) * 1997-01-14 1998-07-31 Rohm Co Ltd Ｉｃカード
JPH11185523A (ja) * 1997-12-22 1999-07-09 Mitsubishi Rayon Co Ltd 導電性被覆用水性樹脂組成物
JP2002517870A (ja) * 1998-06-09 2002-06-18 モトローラ・インコーポレイテッド 製品一体型のアンテナを有する無線周波数識別タグ
JP2000006523A (ja) * 1998-06-24 2000-01-11 Dainippon Printing Co Ltd 熱転写シート及びそれを用いたｉｃカード
JP2000299411A (ja) * 1999-02-10 2000-10-24 Hitachi Maxell Ltd チップ実装体及びその製造方法
JP2004532313A (ja) * 2001-04-06 2004-10-21 キャボット　コーポレイション 導電性ポリマー組成物及びそれを含有する製品
JP2002319006A (ja) * 2001-04-19 2002-10-31 Tokushu Paper Mfg Co Ltd 偽造防止用スレッド、それを用いた偽造防止用シート状物および偽造防止用シート状物の製造方法
JP2003099744A (ja) * 2001-09-25 2003-04-04 Nec Tokin Corp Ｉｃモジュール及びｉｃカード
JP2003283120A (ja) * 2002-03-25 2003-10-03 Toppan Forms Co Ltd 導電接続部同士の接続方法
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Publication number Priority date Publication date Assignee Title
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US8552498B2 (en) 2008-09-19 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
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US8102034B2 (en) 2008-09-25 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
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