JP2010016362A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2010016362A JP2010016362A JP2009133591A JP2009133591A JP2010016362A JP 2010016362 A JP2010016362 A JP 2010016362A JP 2009133591 A JP2009133591 A JP 2009133591A JP 2009133591 A JP2009133591 A JP 2009133591A JP 2010016362 A JP2010016362 A JP 2010016362A
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- insulator
- integrated circuit
- semiconductor device
- semiconductor integrated
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- Semiconductor Memories (AREA)
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
【解決手段】半導体集積回路を囲いこむように覆う導電性遮蔽体により、半導体集積回路の静電気放電による静電気破壊(回路の誤動作や半導体素子の損傷)を防止する。導電性遮蔽体はめっき法により電気的に接続するように形成する。また、導電性遮蔽体の形成にめっき法を用いるために、低コストで生産性高く半導体装置を作製することができる。
【選択図】図1
Description
本実施の形態では、より信頼性の高い半導体装置、及び歩留まりよい半導体装置の作製方法を、図1乃至図3を用いて詳細に説明する。
本実施の形態では、本発明を用いた高い信頼性を付与することを目的とする半導体装置、及び半導体装置の作製方法の他の例を図14乃至図17を用いて説明する。以下に説明する本実施の形態の構成において、実施の形態1と同一部分又は同様な機能を有する部分には同一の符号を異なる図面間で共通して用い、その繰り返しの説明は省略する。
本実施の形態では、本発明を用いた高い信頼性を付与することを目的とする半導体装置、及び半導体装置の作製方法の他の例を図22乃至図24を用いて説明する。以下に説明する本実施の形態の構成において、実施の形態1及び実施の形態2と同一部分又は同様な機能を有する部分には同一の符号を異なる図面間で共通して用い、その繰り返しの説明は省略する。
本実施の形態では、本発明の半導体装置の作製工程において、導電性遮蔽体の形成に用いるめっき法の一例を示す。以下に説明する本実施の形態の構成において、実施の形態1と同一部分又は同様な機能を有する部分には同一の符号を異なる図面間で共通して用い、その繰り返しの説明は省略する。
本実施の形態では、本発明の半導体装置の作製工程において、導電性遮蔽体の形成に用いるめっき法の一例を示す。以下に説明する本実施の形態の構成において、実施の形態1と同一部分又は同様な機能を有する部分には同一の符号を異なる図面間で共通して用い、その繰り返しの説明は省略する。
本実施の形態では、より信頼性の高い半導体装置、及び歩留まりよい半導体装置の作製方法を、図4及び図5を用いて詳細に説明する。本実施の形態では、半導体装置の一例としてCMOS(相補型金属酸化物半導体:Complementary Metal Oxide Semiconductor)に関して説明する。
本実施の形態では、より高い信頼性を付与することを目的とした半導体装置、及び半導体装置の作製方法においてメモリを有する半導体装置の一例に関して図6乃至図8を用いて説明する。
本実施の形態では、より高い信頼性を付与することを目的とした半導体装置の例について説明する。詳しくは半導体装置の一例として、マイクロプロセッサ及び非接触でデータの送受信を行うことのできる演算機能を備えた半導体装置の一例について説明する。
本実施の形態では、上記実施の形態で示した半導体装置の使用形態の一例について説明する。具体的には、非接触でデータの入出力が可能である半導体装置の適用例に関して、図面を用いて以下に説明する。非接触でデータの入出力が可能である半導体装置は利用の形態によって、RFIDタグ、IDタグ、ICタグ、RFタグ、無線タグ、電子タグまたは無線チップとも呼ばれる。
本実施の形態では、上述した本発明を用いて形成された非接触でデータの入出力が可能である半導体装置の適用例に関して図面を参照して以下に説明する。非接触でデータの入出力が可能である半導体装置は利用の形態によっては、RFIDタグ、IDタグ、ICタグ、ICチップ、RFタグ、無線タグ、電子タグまたは無線チップともよばれる。
本発明によりプロセッサ回路を有するチップ(以下、プロセッサチップ、無線チップ、無線プロセッサ、無線メモリ、無線タグともよぶ)やRFIDタグとして機能する半導体装置を形成することができる。本発明の半導体装置の用途は広範にわたり、非接触で対象物の履歴等の情報を明確にし、生産・管理等に役立てる商品であればどのようなものにも適用することができる。例えば、紙幣、硬貨、有価証券類、証書類、無記名債券類、包装用容器類、書籍類、記録媒体、身の回り品、乗物類、食品類、衣類、保健用品類、生活用品類、薬品類及び電子機器等に設けて使用することができる。これらの例に関して図9を用いて説明する。
本実施の形態では、本発明の半導体装置の実装例を、図18を用いて説明する。
Claims (6)
- 半導体集積回路及び前記半導体集積回路に電気的に接続するアンテナを形成し、
前記半導体集積回路及び前記アンテナを、互いに対向するように設けられた第1の絶縁体と第2の絶縁体とで挟持し、
前記第1の絶縁体及び前記第2の絶縁体の前記半導体集積回路と反対側の表面に電気的に接続する導電性遮蔽体を湿式のめっき法により形成することを特徴とする半導体装置の作製方法。 - 半導体集積回路及び前記半導体集積回路に電気的に接続するアンテナを形成し、
前記半導体集積回路及び前記アンテナを、互いに対向するように設けられた第1の絶縁体と第2の絶縁体とで挟持し、
前記半導体集積回路、前記アンテナ、前記第1の絶縁体、及び前記第2の絶縁体の積層体を導電性材料を含むめっき液に浸漬し、前記積層体表面を覆う導電性遮蔽体を形成することを特徴とする半導体装置の作製方法。 - 半導体集積回路及び前記半導体集積回路に電気的に接続するアンテナを形成し、
前記半導体集積回路及び前記アンテナを、互いに対向するように設けられた第1の絶縁体と第2の絶縁体とで挟持し、
前記半導体集積回路、前記アンテナ、前記第1の絶縁体、及び前記第2の絶縁体の積層体を触媒物質を含む溶液中に浸漬し、前記積層体表面に前記触媒物質を吸着させ、
前記触媒物質が吸着した積層体を導電性材料を含むめっき液に浸漬し、前記触媒物質が吸着した積層体表面を覆う導電性遮蔽体を形成することを特徴とする半導体装置の作製方法。 - 請求項3において、前記触媒物質としてパラジウムを用いることを特徴とする半導体装置の作製方法。
- 請求項1乃至4のいずれか一項において、前記導電性遮蔽体としてニッケル合金膜、又は銅膜を形成することを特徴とする半導体装置の作製方法。
- 請求項1乃至5のいずれか一項において、前記第1の絶縁体及び前記第2の絶縁体の少なくとも一方は、繊維体に有機樹脂が含浸された構造体を用いることを特徴とする半導体装置の作製方法。
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US20120108014A1 (en) | 2012-05-03 |
JP5581426B2 (ja) | 2014-08-27 |
US20090305467A1 (en) | 2009-12-10 |
JP2013251555A (ja) | 2013-12-12 |
US8053253B2 (en) | 2011-11-08 |
US8420409B2 (en) | 2013-04-16 |
JP5315134B2 (ja) | 2013-10-16 |
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