JP4864649B2 - 機能性を有する層、及びそれを有する可撓性基板の形成方法、並びに半導体装置の作製方法 - Google Patents
機能性を有する層、及びそれを有する可撓性基板の形成方法、並びに半導体装置の作製方法 Download PDFInfo
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Description
本実施の形態では、容易に機能性を有する層を形成する方法の一形態について図1、2、7、及び15を用いて説明する。なお、図1は、機能性を有する層を形成する工程の断面図を示し、図2は、非接触でデータの伝送が可能な半導体装置(RFID(Radio Frequency Identification)タグ、ICチップ、ICタグ、IDチップ、IDタグ、RFチップ、RFタグ、無線チップ、無線タグとも呼ばれる。)の断面図を示し、図7は図1(A)の上面図を示す。図1の断面図A−Bは、図7の上面図のA−Bの領域に対応する。また、本実施の形態では、機能性を有する層として、導電層を有する層を用いて説明する。また、ここでの導電層は、アンテナとして機能する。なお、本実施の形態は、機能性を有する層として、導電層以外にも着色層を有する層の形成する方法に適用することができる。また、導電層として、アンテナ以外の画素電極、配線、電極等の形成する方法に適用することができる。
本実施の形態では、容易に機能性を有する層を形成する方法の一形態について図3、4を用いて説明する。なお、図3は、機能性を有する層を形成する工程の断面図を示し、図4は、半導体装置として表示装置を用い、表示装置として液晶表示装置の断面図を示す。また、本実施の形態では、機能性を有する層として、画素電極として機能する導電層を有する層を用いて説明する。
本実施の形態では、容易に機能性を有する層を形成する方法の一形態について図5、6を用いて説明する。なお、図5は、機能性を有する層を形成する工程の断面図を示す。また、本実施の形態では、機能性を有する層として、着色層、色変換フィルター、フォログラムカラーフィルター等光学的に機能する層が挙げられる。ここでは、光学的に機能する層として、着色層を用いて説明する。
本実施の形態では、液晶表装置の作製方法の一形態について図6を用いて説明する。なお、図6は、液晶表装置を作製する工程の断面図を示す。
Claims (6)
- 焼成に耐えうるガラス、石英、金属、あるいはステンレスのうちの一つからなる基板上にシランカップリング剤を用いて剥離層を形成し、
前記剥離層上に印刷法により金属元素を有する粒子を含む組成物を塗布し、200〜400℃で焼成することにより、導電層を形成し、
前記導電層を覆う絶縁層を形成し、
前記絶縁層に粘着部材を貼りつけ、
前記剥離層において、前記導電層及び前記絶縁層から前記基板を剥離することを特徴とする半導体装置の作製方法。 - 焼成に耐えうるガラス、石英、金属、あるいはステンレスのうちの一つからなる基板上にシランカップリング剤を用いて剥離層を形成し、
前記剥離層上に印刷法により金属元素を有する粒子を含む組成物を塗布し、200〜400℃で焼成することにより、導電層を形成し、
前記導電層を覆う絶縁層を形成し、
前記絶縁層に粘着部材を貼りつけ、
前記剥離層において、前記導電層及び前記絶縁層から前記基板を剥離し、
前記導電層に集積回路とその接続端子とを電気的に接続することを特徴とする半導体装置の作製方法。 - 焼成に耐えうるガラス、石英、金属、あるいはステンレスのうちの一つからなる基板上にシランカップリング剤を用いて剥離層を形成し、
前記剥離層上に印刷法により金属元素を有する粒子を含む組成物を塗布し、200〜400℃で焼成することにより、導電層を形成し、
前記導電層を覆う絶縁層を形成し、
前記絶縁層に粘着部材を貼りつけ、
前記剥離層において、前記導電層及び前記絶縁層から前記基板を剥離し、
前記導電層及び前記絶縁層に開口部を有する可撓性基板を接着し、
前記可撓性基板の開口部において、前記導電層に集積回路とその接続端子とを電気的に接続することを特徴とする半導体装置の作製方法。 - 請求項1乃至3のいずれか1項において、前記導電層は、アンテナとして機能することを特徴とする半導体装置の作製方法。
- 請求項1乃至3のいずれか1項において、前記導電層は、画素電極として機能することを特徴とする半導体装置の作製方法。
- 焼成に耐えうるガラス、石英、金属、あるいはステンレスのうちの一つからなる第1の基板上にシランカップリング剤を用いて第1の剥離層を形成し、
前記第1の剥離層上に印刷法により金属元素を有する粒子を含む組成物を塗布し、200〜400℃で焼成することにより、第1の導電層を形成し、
前記第1の導電層を覆う第1の絶縁層を形成し、
前記第1の絶縁層に第1の粘着部材を貼りつけ、
前記第1の剥離層において、前記第1の導電層及び前記第1の絶縁層から前記第1の基板を剥離し、
前記第1の導電層及び前記第1の絶縁層に可撓性基板を貼り付けることにより、前記第1の導電層及び第1の絶縁層を有する第1の可撓性基板を形成し、
焼成に耐えうるガラス、石英、金属、あるいはステンレスのうちの一つからなる第2の基板上にシランカップリング剤を用いて第2の剥離層を形成し、
前記第2の剥離層上に印刷法により金属元素を有する粒子を含む組成物を塗布し、200〜400℃で焼成することにより、第2の導電層を形成し、
前記第2の導電層を覆う第2の絶縁層を形成し、
前記第2の絶縁層に第2の粘着部材を貼り付け、
前記第2の剥離層において、前記第2の導電層及び前記第2の絶縁層から前記第2の基板を剥離し、
前記第2の導電層及び前記第2の絶縁層に可撓性基板を貼り付けることにより、第2の可撓性基板を形成し、
前記第1の可撓性基板または前記第2の可撓性基板上にシール材を形成し、
前記シール材及び前記第1の絶縁層または前記第2の絶縁層で囲まれる領域に液晶材料を塗布し、
前記第1の可撓性基板と前記第2の可撓性基板を前記シール材により貼りあわせることを特徴とする半導体装置の作製方法。
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