JP2007235103A5 - - Google Patents

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Publication number
JP2007235103A5
JP2007235103A5 JP2006356569A JP2006356569A JP2007235103A5 JP 2007235103 A5 JP2007235103 A5 JP 2007235103A5 JP 2006356569 A JP2006356569 A JP 2006356569A JP 2006356569 A JP2006356569 A JP 2006356569A JP 2007235103 A5 JP2007235103 A5 JP 2007235103A5
Authority
JP
Japan
Prior art keywords
light emitting
electrode
semiconductor light
emitting device
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006356569A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007235103A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006356569A priority Critical patent/JP2007235103A/ja
Priority claimed from JP2006356569A external-priority patent/JP2007235103A/ja
Priority to US11/699,495 priority patent/US20070205426A1/en
Publication of JP2007235103A publication Critical patent/JP2007235103A/ja
Publication of JP2007235103A5 publication Critical patent/JP2007235103A5/ja
Withdrawn legal-status Critical Current

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JP2006356569A 2006-01-31 2006-12-28 半導体発光装置 Withdrawn JP2007235103A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006356569A JP2007235103A (ja) 2006-01-31 2006-12-28 半導体発光装置
US11/699,495 US20070205426A1 (en) 2006-01-31 2007-01-30 Semiconductor light-emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006023349 2006-01-31
JP2006356569A JP2007235103A (ja) 2006-01-31 2006-12-28 半導体発光装置

Publications (2)

Publication Number Publication Date
JP2007235103A JP2007235103A (ja) 2007-09-13
JP2007235103A5 true JP2007235103A5 (enExample) 2010-01-14

Family

ID=38470744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006356569A Withdrawn JP2007235103A (ja) 2006-01-31 2006-12-28 半導体発光装置

Country Status (2)

Country Link
US (1) US20070205426A1 (enExample)
JP (1) JP2007235103A (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5199623B2 (ja) * 2007-08-28 2013-05-15 パナソニック株式会社 発光装置
CN101809764B (zh) 2007-09-28 2012-05-23 欧司朗光电半导体有限公司 发射辐射的半导体本体
JP5606922B2 (ja) * 2008-11-28 2014-10-15 株式会社小糸製作所 発光モジュールおよび灯具ユニット
JP5152520B2 (ja) * 2009-01-28 2013-02-27 国立大学法人北海道大学 半導体発光素子
US7883910B2 (en) * 2009-02-03 2011-02-08 Industrial Technology Research Institute Light emitting diode structure, LED packaging structure using the same and method of forming the same
KR100993045B1 (ko) * 2009-10-23 2010-11-08 엘지이노텍 주식회사 발광소자 칩 및 발광소자 패키지
KR101055773B1 (ko) 2009-12-21 2011-08-11 서울반도체 주식회사 형광체 시트를 갖는 발광장치 및 그 제조방법
KR101202174B1 (ko) * 2009-12-21 2012-11-15 서울반도체 주식회사 형광체 시트를 갖는 발광장치 및 그 제조방법
US8338317B2 (en) 2011-04-06 2012-12-25 Infineon Technologies Ag Method for processing a semiconductor wafer or die, and particle deposition device
KR100999733B1 (ko) * 2010-02-18 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
DE102011011861A1 (de) * 2011-02-21 2012-08-23 Osram Opto Semiconductors Gmbh Halbleiterchipgehäuseanordnung und Herstellungsverfahren
DE102011004508A1 (de) * 2011-02-22 2012-08-23 Siemens Aktiengesellschaft Vorrichtung und Verfahren zum Kontaktieren eines LED-Chips
CN102903797A (zh) * 2011-07-26 2013-01-30 展晶科技(深圳)有限公司 Led芯片的制造方法
KR102075585B1 (ko) * 2013-06-14 2020-02-11 엘지이노텍 주식회사 발광소자 및 조명시스템
WO2015109968A1 (zh) * 2014-01-23 2015-07-30 中国科学院苏州纳米技术与纳米仿生研究所 晶圆级半导体器件及其制备方法
TWI662724B (zh) * 2018-06-06 2019-06-11 海華科技股份有限公司 覆晶式發光模組
JP7245101B2 (ja) 2019-04-02 2023-03-23 キヤノン株式会社 半導体発光装置、露光ヘッド及び画像形成装置
TWI779242B (zh) * 2019-10-28 2022-10-01 錼創顯示科技股份有限公司 微型發光二極體裝置
CN110739377B (zh) * 2019-10-28 2023-07-25 錼创显示科技股份有限公司 微型发光二极管装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614056B1 (en) * 1999-12-01 2003-09-02 Cree Lighting Company Scalable led with improved current spreading structures
JP3891115B2 (ja) * 2001-04-17 2007-03-14 日亜化学工業株式会社 発光装置
TW567618B (en) * 2002-07-15 2003-12-21 Epistar Corp Light emitting diode with adhesive reflection layer and manufacturing method thereof
US6903380B2 (en) * 2003-04-11 2005-06-07 Weldon Technologies, Inc. High power light emitting diode
JP4324081B2 (ja) * 2004-11-22 2009-09-02 パナソニック株式会社 光学デバイス

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