JP2007227921A - 低減された誘電率を有する誘電体の製造方法、および半導体デバイス構成要素、および基板 - Google Patents
低減された誘電率を有する誘電体の製造方法、および半導体デバイス構成要素、および基板 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000005253 cladding Methods 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 36
- 229910021426 porous silicon Inorganic materials 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 4
- 239000011800 void material Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 238000007743 anodising Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 59
- 239000002184 metal Substances 0.000 description 59
- 238000004088 simulation Methods 0.000 description 15
- 239000010949 copper Substances 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000002048 anodisation reaction Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 239000000615 nonconductor Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
【解決手段】第1の態様では、低減された誘電率を有する誘電体を製造する第1の方法を提供する。第1の方法は、(1)基板上のトレンチを含む誘電体層を形成するステップと、(2)誘電体の実効誘電率を減少させるために、トレンチの側壁および底部のうちの少なくとも一方に沿って、誘電体層内に複数の空隙を形成することにより、誘電体層内にクラッディング領域を形成するステップとを含む。他の多数の態様を提供する。
【選択図】図9
Description
Claims (19)
- 基板上のトレンチを含む誘電体層を形成するステップと、
前記誘電体の実効誘電率を減少させるために、前記トレンチの側壁および底部のうちの少なくとも一方に沿って、前記誘電体層内に複数の空隙を形成することにより、前記誘電体層内にクラッディング領域を形成するステップとを含む、
低減された誘電率を有する誘電体を製造する、方法。 - 前記トレンチ内に相互接続を形成するステップをさらに含む、請求項1に記載の方法。
- 前記空隙が、前記トレンチの側壁および底部のうちの前記少なくとも一方に対してほぼ垂直である、請求項1に記載の方法。
- 前記クラッディング領域を形成するステップが、
前記誘電体層内に酸化物の突出部を作るステップと、
前記誘電体層から前記酸化物の突出部をエッチングするステップとを含む、請求項1に記載の方法。 - 前記誘電体層から前記酸化物の突出部をエッチングするステップが、前記誘電体層から酸化物の突出部を除去するために希釈HFウェット・エッチングを使用するステップを含む、請求項4に記載の方法。
- 前記誘電体層内に酸化物の突出部を作るステップが、
前記基板上に多孔性シリコン層を形成するステップと、
前記多孔性シリコン層を酸化させて、酸素が、前記多孔性シリコン層の気孔を介して、前記誘電体層の中に拡散するようになされるステップとを含む、請求項4に記載の方法。 - 前記基板上に前記多孔性シリコン層を形成するステップが、
前記基板上にシリコン層を形成するステップと、
前記シリコン層を前記多孔性シリコン層に変化させるために、陽極酸化処理を使用するステップとを含む、請求項6に記載の方法。 - 前記多孔性シリコン層を酸化させて、酸素が、前記多孔性シリコン層の気孔を介して、前記誘電体層の中に拡散するようになされるステップが、前記基板を酸素プラズマに露出するステップを含む、請求項6に記載の方法。
- 前記クラッディング領域と前記トレンチの間に拡散障壁層を形成するステップをさらに含む、請求項1に記載の方法。
- 前記クラッディング領域を形成するステップが、
相互接続に隣接する材料の実効誘電率を減少させるステップと、
前記誘電体層の強度を保持するステップとを含む、請求項1に記載の方法。 - 前記誘電体層が化学機械研磨に耐えることができる、請求項1に記載の方法。
- 基板上のトレンチを含む誘電体層と、
前記誘電体の実効誘電率を減少させるために、前記トレンチの側壁および底部のうちの少なくとも一方に沿って、前記誘電体層内に複数の空隙を含む、前記誘電体層内のクラッディング領域とを含む、
半導体デバイス構成要素。 - 前記誘電体層の誘電体が、少なくとも炭素および水素成分をドーピングされた酸化シリコンを含む、請求項12に記載の半導体デバイス構成要素。
- 前記誘電体層の誘電体が、約2.9のkを有して、かつ前記クラッディング領域の前記実効誘電率が、約2.0未満である、請求項12に記載の半導体デバイス構成要素。
- 各空隙が、直径約5オングストロームおよび長さ約200オングストローム以下である、請求項12に記載の半導体デバイス構成要素。
- 前記クラッディング領域と前記トレンチの間の拡散障壁層をさらに含む、請求項12に記載の半導体デバイス構成要素。
- 基板上のトレンチを含む誘電体層と、
前記誘電体の実効誘電率を減少させるために、前記トレンチの側壁および底部のうちの少なくとも一方に沿って、前記誘電体層内に複数の空隙を含む、前記誘電体層内のクラッディング領域とを有する、
半導体デバイス構成要素を含む、基板。 - 前記トレンチ内に形成された相互接続をさらに含む、請求項17に記載の基板。
- 前記相互接続が、前記クラッディング領域と前記トレンチの間の拡散障壁層をさらに含む、請求項18に記載の基板。
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US11/360,350 US7732322B2 (en) | 2006-02-23 | 2006-02-23 | Dielectric material with reduced dielectric constant and methods of manufacturing the same |
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CN103296433B (zh) * | 2012-02-29 | 2017-09-26 | 深圳光启创新技术有限公司 | 一种超材料 |
US9379043B1 (en) * | 2015-02-10 | 2016-06-28 | Powertech Technology Inc. | TSV structure having insulating layers with embedded voids |
US9853025B1 (en) * | 2016-10-14 | 2017-12-26 | International Business Machines Corporation | Thin film metallic resistors formed by surface treatment of insulating layer |
US11164873B2 (en) * | 2019-05-23 | 2021-11-02 | Micron Technology, Inc. | Apparatuses including laminate spacer structures, and related memory devices, electronic systems, and methods |
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US6903002B1 (en) * | 2002-09-11 | 2005-06-07 | Cypress Semiconductor Corporation | Low-k dielectric layer with air gaps |
US6861332B2 (en) * | 2002-11-21 | 2005-03-01 | Intel Corporation | Air gap interconnect method |
US6835631B1 (en) * | 2003-11-20 | 2004-12-28 | Chartered Semiconductor Manufacturing Ltd | Method to enhance inductor Q factor by forming air gaps below inductors |
US7078814B2 (en) * | 2004-05-25 | 2006-07-18 | International Business Machines Corporation | Method of forming a semiconductor device having air gaps and the structure so formed |
US7094669B2 (en) * | 2004-08-03 | 2006-08-22 | Chartered Semiconductor Manufacturing Ltd | Structure and method of liner air gap formation |
US7972954B2 (en) * | 2006-01-24 | 2011-07-05 | Infineon Technologies Ag | Porous silicon dielectric |
-
2006
- 2006-02-23 US US11/360,350 patent/US7732322B2/en not_active Expired - Fee Related
-
2007
- 2007-01-25 CN CN2007100072616A patent/CN101026122B/zh not_active Expired - Fee Related
- 2007-02-02 TW TW096103897A patent/TW200805490A/zh unknown
- 2007-02-19 JP JP2007037720A patent/JP5198775B2/ja not_active Expired - Fee Related
- 2007-10-30 US US11/928,913 patent/US7948084B2/en not_active Expired - Fee Related
Also Published As
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US20070194405A1 (en) | 2007-08-23 |
CN101026122B (zh) | 2011-07-27 |
US7948084B2 (en) | 2011-05-24 |
JP5198775B2 (ja) | 2013-05-15 |
US7732322B2 (en) | 2010-06-08 |
US20080054487A1 (en) | 2008-03-06 |
TW200805490A (en) | 2008-01-16 |
CN101026122A (zh) | 2007-08-29 |
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