JP2007220769A - Thermocompression bonding device of semiconductor component - Google Patents

Thermocompression bonding device of semiconductor component Download PDF

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JP2007220769A
JP2007220769A JP2006037458A JP2006037458A JP2007220769A JP 2007220769 A JP2007220769 A JP 2007220769A JP 2006037458 A JP2006037458 A JP 2006037458A JP 2006037458 A JP2006037458 A JP 2006037458A JP 2007220769 A JP2007220769 A JP 2007220769A
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thermocompression bonding
holding tool
conductive
semiconductor component
ceramic heater
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JP4508124B2 (en
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Tomoaki Nakanishi
智昭 中西
Shozo Minamitani
昌三 南谷
Shunji Onobori
俊司 尾登
Satoshi Kukihara
聡 久木原
Mitsumasa Mino
光正 三野
Shuichi Hirata
修一 平田
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75302—Shape
    • H01L2224/7531—Shape of other parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75313—Removable bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75753—Means for optical alignment, e.g. sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thermocompression bonding device of a semiconductor component capable of preventing the semiconductor component from getting damaged due to electrification of a holding tool. <P>SOLUTION: In the thermocompression bonding device of the semiconductor component for thermocompression-bonding a chip 6 with a substrate 4, a thermocompression bonding head 16 is constituted such that the holding tool 12 is detachably mounted on a ceramic heater 23 provided on an electrically grounded conductive liftable block 20 and generating heat by applying AC voltage. In addition, a conductive spring member 27 conductive with the block 20 via a conductive cord 28 is brought into contact with the holding tool 12, thereby keeping the tool 12 always electrically grounded. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、半導体部品を基板に熱圧着する半導体部品の熱圧着装置に関するものである。   The present invention relates to a semiconductor component thermocompression bonding apparatus for thermocompression bonding a semiconductor component to a substrate.

シリコンチップに回路が形成された半導体部品を基板に実装する装置として、熱圧着装置が知られている。この熱圧着装置では、保持ツールによって吸着保持された半導体部品を加熱しながら基板に対して押圧することにより、半田接合や異方性導電剤などによって半導体部品を基板に接合する（例えば特許文献１参照）。このような熱圧着装置において、半導体部品を加熱するための加熱手段として、セラミックヒータが一般に用いられている（特許文献２参照）。セラミックヒータは、窒化アルミニウムなどのセラミックに発熱回路を形成した構成となっており、使用するセラミックの性質、例えば良好な熱衝撃性を利用して急速加熱が可能となるなど優れた特性を有している。熱圧着装置においては、半導体部品を保持する保持ツールをこのセラミックヒータに接触させ、接触熱伝達によって加熱を行う方式が用いられる。
特許第３３９９３６７号公報 特開平９−６３７５０号公報 A thermocompression bonding apparatus is known as an apparatus for mounting a semiconductor component having a circuit formed on a silicon chip on a substrate. In this thermocompression bonding apparatus, a semiconductor component is bonded to the substrate by solder bonding or an anisotropic conductive agent by pressing the semiconductor component sucked and held by the holding tool against the substrate while heating (for example, Patent Document 1). reference). In such a thermocompression bonding apparatus, a ceramic heater is generally used as a heating means for heating a semiconductor component (see Patent Document 2). Ceramic heaters have a structure in which a heating circuit is formed in a ceramic such as aluminum nitride, and have excellent characteristics such as rapid heating using the properties of the ceramic used, for example, good thermal shock properties. ing. In the thermocompression bonding apparatus, a method is used in which a holding tool for holding a semiconductor component is brought into contact with the ceramic heater and heated by contact heat transfer.
Japanese Patent No. 3399367 JP-A-9-63750

近年電子機器の小型化・高機能化の要請から実装基板は高密度化し、高集積度の実装が求められるようになっていることから、半導体部品の回路パターンは従来に増して微細化している。ところがこのような微細パターンの半導体部品を対象とする熱圧着装置に、上述のセラミックヒータを用いる場合には、次のような不都合を生じる場合がある。   In recent years, mounting boards have become denser due to demands for miniaturization and higher functionality of electronic devices, and high integration mounting is required. Therefore, circuit patterns of semiconductor components are becoming finer than ever. . However, when the above-described ceramic heater is used in a thermocompression bonding apparatus intended for semiconductor components having such a fine pattern, the following inconvenience may occur.

すなわち、半導体部品を保持する保持ツールは、絶縁性の良好なセラミックヒータを介して電気的に絶縁された状態にあることから、セラミックヒータ作動時の磁界によって保持ツールに発生する渦電流によって、保持ツールが半導体部品とともに帯電する現象が生じる。そして部品実装時に帯電した状態の半導体部品が基板に着して導通する際に、場合によっては半導体部品自体が電気的にダメージを受けるという不具合が発生する。このような半導体部品のダメージは、半導体部品を複数層重ねるいわゆるチップオンチップ構造の実装形態においてより顕著に現れるようになっている。   In other words, since the holding tool for holding the semiconductor components is electrically insulated through a ceramic heater having good insulation, the holding tool is held by an eddy current generated in the holding tool by a magnetic field when the ceramic heater is activated. The tool is charged with semiconductor components. When a semiconductor component that is charged at the time of component mounting is attached to the substrate and becomes conductive, there is a problem that the semiconductor component itself is electrically damaged in some cases. Such damage to the semiconductor component appears more prominently in a so-called chip-on-chip structure in which a plurality of semiconductor components are stacked.

そこで本発明は、保持ツールが帯電することによる半導体部品のダメージを防止することができる半導体部品の熱圧着装置を提供することを目的とする。   Therefore, an object of the present invention is to provide a thermocompression bonding apparatus for a semiconductor component that can prevent damage to the semiconductor component due to charging of the holding tool.

本発明の半導体部品の熱圧着装置は、半導体部品を基板に熱圧着する半導体部品の熱圧着装置であって、前記基板に対して昇降し電気的に接地された導電性の昇降ブロックと、前記昇降ブロックに設けられ交流電圧を印加することにより発熱するセラミックヒータと、前記セラミックヒータに着脱自在に装着され前記半導体部品に当接して保持する保持ツールと、前記保持ツールに当接して電気的に導通する導電部と、前記昇降ブロックと前記導電部とを電気的に接続する導電接続部材とを備えた。   A thermocompression bonding apparatus for a semiconductor component according to the present invention is a thermocompression bonding apparatus for a semiconductor component for thermocompression bonding a semiconductor component to a substrate, wherein the conductive elevating block is moved up and down with respect to the substrate and electrically grounded. A ceramic heater that is provided in the elevating block and generates heat by applying an AC voltage, a holding tool that is detachably attached to the ceramic heater and holds the semiconductor component in contact with the ceramic heater, and contacts and electrically contacts the holding tool A conductive portion that conducts, and a conductive connection member that electrically connects the elevating block and the conductive portion are provided.

本発明によれば、半導体部品に当接して保持しセラミックヒータに着脱自在に装着される保持ツールと、保持ツールに当接して電気的に導通する導電部と、昇降ブロックと導電
部とを電気的に接続する導電接続部材とを備えた構成を採用することにより、保持ツールへの帯電を防止して半導体部品の電気的なダメージを防止することができる。 According to the present invention, the holding tool that is held in contact with the semiconductor component and is detachably attached to the ceramic heater, the conductive portion that is in contact with and electrically connected to the holding tool, the lifting block and the conductive portion are electrically connected. By adopting a configuration including a conductive connecting member that is connected in a connected manner, the holding tool can be prevented from being charged and electrical damage to the semiconductor component can be prevented.

次に本発明の実施の形態を図面を参照して説明する。図１は本発明の一実施の形態の半導体部品の熱圧着装置の正面図、図２、図３，図４は本発明の一実施の形態の半導体部品の熱圧着装置の熱圧着ヘッドの構造説明図、図５は本発明の一実施の形態の半導体部品の熱圧着装置の動作説明図である。   Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a front view of a semiconductor component thermocompression bonding apparatus according to an embodiment of the present invention, and FIGS. 2, 3, and 4 are structures of a thermocompression bonding head of a semiconductor component thermocompression bonding apparatus according to an embodiment of the present invention. Explanatory drawing and FIG. 5 are operation | movement explanatory drawings of the thermocompression bonding apparatus of the semiconductor component of one embodiment of this invention.

まず図１を参照して半導体部品を基板に熱圧着する半導体部品の熱圧着装置１の構造を説明する。図１において、基台２上には保持テーブル３が設けられており、保持テーブル３は半導体部品であるチップ６を供給する部品トレイ５およびチップ６が熱圧着により実装される基板４を保持する。基板４の上面には電極４ａが設けられており、チップ６の下面に形成されたバンプ６ａを電極４ａに熱圧着によって接合することにより、チップ６は基板４に実装される。   First, the structure of a semiconductor component thermocompression bonding apparatus 1 for thermocompression bonding a semiconductor component to a substrate will be described with reference to FIG. In FIG. 1, a holding table 3 is provided on a base 2, and the holding table 3 holds a component tray 5 for supplying chips 6 as semiconductor components and a substrate 4 on which the chips 6 are mounted by thermocompression bonding. . An electrode 4 a is provided on the upper surface of the substrate 4, and the chip 6 is mounted on the substrate 4 by bonding bumps 6 a formed on the lower surface of the chip 6 to the electrode 4 a by thermocompression bonding.

保持テーブル３の上方には、実装機構部１３が配設されている。実装機構部１３はＸ方向に配設された移動テーブル１４によって水平往復動する移動ブロック１５に、熱圧着ヘッド１６を連結した構成となっている。移動ブロック１５は熱圧着ヘッド１６を昇降させるための昇降機構を内蔵しており、移動テーブル１４および移動ブロック１５を駆動することにより、熱圧着ヘッド１６はＸ方向への水平移動および昇降動作を行う。   A mounting mechanism unit 13 is disposed above the holding table 3. The mounting mechanism 13 has a configuration in which a thermocompression bonding head 16 is connected to a moving block 15 that reciprocates horizontally by a moving table 14 disposed in the X direction. The moving block 15 incorporates an elevating mechanism for elevating and lowering the thermocompression bonding head 16. By driving the moving table 14 and the moving block 15, the thermocompression bonding head 16 performs horizontal movement in the X direction and elevating operation. .

熱圧着ヘッド１６の下端部には下面に吸引孔１２ａが設けられた保持ツール１２が装着されており、保持ツール１２をチップ６に当接させた状態で吸引孔１２ａから真空吸着することにより、熱圧着ヘッド１６はチップ６を吸着して保持する。また吸引孔１２ａからの真空吸引を解除することにより、熱圧着ヘッド１６によるチップ６の吸着保持が解除される。そして熱圧着ヘッド１６による吸着保持・保持解除動作と、熱圧着ヘッド１６の水平移動・昇降動作を組み合わせて行うことにより、後述する部品圧着動作が実行される。   A holding tool 12 provided with a suction hole 12a on the lower surface is attached to the lower end portion of the thermocompression bonding head 16, and the holding tool 12 is in vacuum contact with the chip 6 while being sucked from the suction hole 12a. The thermocompression bonding head 16 sucks and holds the chip 6. Further, by releasing the vacuum suction from the suction hole 12a, the suction holding of the chip 6 by the thermocompression bonding head 16 is released. Then, by performing a suction holding / holding release operation by the thermocompression bonding head 16 and a horizontal movement / lifting operation of the thermocompression bonding head 16, a component crimping operation described later is executed.

保持テーブル３の斜め上方には、認識ユニット７が配設されている。認識ユニット７は、上方の撮像視野と下方の撮像視野を単一撮像動作で撮像可能な２視野光学系を備えた撮像ユニット８を、移動機構９によってＸ方向に進退させる構成となっている。基板４が保持テーブル３に保持され、且つチップ６を吸着保持した熱圧着ヘッド１６が基板４の直上に位置した状態で、撮像ユニット８を基板４と熱圧着ヘッド１６との間に進出させることにより、基板４の電極４ａとチップ６とを同一の撮像動作によって撮像して認識することができる。認識ユニット７は、基板４および熱圧着ヘッド１６によって保持されたチップ６を光学的に認識する認識手段となっている。   A recognition unit 7 is disposed obliquely above the holding table 3. The recognition unit 7 has a configuration in which an imaging unit 8 including a two-field optical system capable of imaging an upper imaging field and a lower imaging field by a single imaging operation is advanced and retracted in the X direction by a moving mechanism 9. The imaging unit 8 is advanced between the substrate 4 and the thermocompression bonding head 16 in a state where the substrate 4 is held on the holding table 3 and the thermocompression bonding head 16 that holds the chip 6 by suction is positioned immediately above the substrate 4. Thus, the electrode 4a of the substrate 4 and the chip 6 can be imaged and recognized by the same imaging operation. The recognition unit 7 serves as a recognition means for optically recognizing the chip 6 held by the substrate 4 and the thermocompression bonding head 16.

保持テーブル３の上方の熱圧着ヘッド１６の移動範囲には、ツール交換部１０が配設されている。ツール交換部１０は保持ツール１２を収納保持するツール収納部１１を備えており、熱圧着ヘッド１６をツール収納部１１の上方に移動させてツール収納部１１に保持された保持ツール１２に対して熱圧着ヘッド１６を昇降させるツール交換動作を行わせることにより、熱圧着ヘッド１６に既に装着済みの保持ツール１２とツール収納部１１に収納された新たな保持ツール１２とを自動的に交換することができる。熱圧着ヘッド１６を移動させる実装機構部１３およびツール交換部１０は、ツール収納部１１に収納された保持ツール１２とセラミックヒータ２３に装着された保持ツール１２とを交換するツール交換手段となっている。   A tool changer 10 is disposed in the range of movement of the thermocompression bonding head 16 above the holding table 3. The tool exchange unit 10 includes a tool storage unit 11 that stores and holds the holding tool 12, and moves the thermocompression bonding head 16 above the tool storage unit 11 to hold the tool 12 held in the tool storage unit 11. By performing a tool exchanging operation for raising and lowering the thermocompression bonding head 16, the holding tool 12 already mounted on the thermocompression bonding head 16 and a new holding tool 12 stored in the tool storage unit 11 are automatically replaced. Can do. The mounting mechanism part 13 and the tool exchange part 10 for moving the thermocompression bonding head 16 serve as tool exchange means for exchanging the holding tool 12 accommodated in the tool accommodating part 11 and the retaining tool 12 attached to the ceramic heater 23. Yes.

次に図２を参照して、熱圧着ヘッド１６の構造を説明する。図２（ａ）に示すように、熱圧着ヘッド１６は移動ブロック１５に結合されて基板４に対して昇降する昇降ブロック
２０を備えている。昇降ブロック２０の下部には、結合軸部２１を介して冷却部としての冷却ジャケット２２およびセラミックヒータ２３が固定的に装着され、さらにセラミックヒータ２３の下面には保持ツール１２が着脱自在に装着されている。昇降ブロック２０は導電性の良好な金属で構成されており、実装機構部１３を介して装置本体の接地部と導通して、電気的に接地された状態にある。なお、基板４も保持テーブル３を介して装置本体の接地部と導通して、電気的に接地された状態にある。 Next, the structure of the thermocompression bonding head 16 will be described with reference to FIG. As shown in FIG. 2A, the thermocompression bonding head 16 includes a lifting block 20 that is coupled to the moving block 15 and moves up and down with respect to the substrate 4. A cooling jacket 22 and a ceramic heater 23 as a cooling part are fixedly attached to the lower part of the lifting block 20 via a coupling shaft part 21, and the holding tool 12 is detachably attached to the lower surface of the ceramic heater 23. ing. The elevating block 20 is made of a metal having good conductivity, and is electrically connected to the grounding portion of the apparatus main body via the mounting mechanism portion 13 and is electrically grounded. The substrate 4 is also electrically connected to the grounding portion of the apparatus body via the holding table 3 and is electrically grounded.

昇降ブロック２０に装着して設けられたセラミックヒータ２３は、ＳｉＮ（窒化珪素）など、耐熱性・電気的絶縁性に優れたセラミックで製作されており、内蔵された発熱体２４により昇温する。発熱体２４は板状の基板に発熱回路パターンを形成した形態となっており、発熱回路パターンに交流電圧を印加することにより発熱する。また保持ツール１２は、ＳｉＣ（炭化珪素）など導電性を有するセラミックで製作されており、セラミックヒータ２３に着脱自在に装着される。熱圧着ヘッド１６による熱圧着時には、保持ツール１２はチップ６に当接して保持するとともに、セラミックヒータ２３の熱をチップ６に伝達する。   The ceramic heater 23 mounted on the elevating block 20 is made of ceramic having excellent heat resistance and electrical insulation, such as SiN (silicon nitride), and is heated by a built-in heating element 24. The heating element 24 has a form in which a heating circuit pattern is formed on a plate-like substrate, and generates heat when an AC voltage is applied to the heating circuit pattern. The holding tool 12 is made of a conductive ceramic such as SiC (silicon carbide), and is detachably attached to the ceramic heater 23. At the time of thermocompression bonding by the thermocompression bonding head 16, the holding tool 12 abuts and holds the chip 6 and transmits heat of the ceramic heater 23 to the chip 6.

セラミックヒータ２３の下面はツール装着面２３ａとなっており、ツール装着面２３ａには吸引孔２３ｂが開口している。吸引孔２３ｂは冷却ジャケット２２、結合軸部２１を貫通して設けられた吸引経路を介して真空吸引源に接続されており、吸引孔２３ｂから真空吸引することにより、保持ツール１２はツール装着面２３ａに吸着保持される。この状態において、吸引孔１２ａはセラミックヒータ２３、冷却ジャケット２２、結合軸部２１を貫通して設けられた吸引経路を介して図示しない真空吸引源と接続される。   The lower surface of the ceramic heater 23 is a tool mounting surface 23a, and a suction hole 23b is opened in the tool mounting surface 23a. The suction hole 23b is connected to a vacuum suction source through a suction path provided through the cooling jacket 22 and the coupling shaft portion 21, and the holding tool 12 is attached to the tool mounting surface by vacuum suction from the suction hole 23b. 23a is adsorbed and held. In this state, the suction hole 12a is connected to a vacuum suction source (not shown) through a suction path provided through the ceramic heater 23, the cooling jacket 22, and the coupling shaft portion 21.

保持ツール１２は上面よりも低い位置において両側端から水平に延出した張出し部１２ｃを有しており、保持ツール１２をセラミックヒータ２３に保持させた状態では、ツール装着面２３ａと張出し部１２ｃの上面の導電接触面１２ｄとの間には、隙間２５が形成される。冷却ジャケット２２の両側面には、略Ｌ字形状の導電バネ部材２７が固着端子２６によって固定されており、固着端子２６にはさらに昇降ブロック２０と導通する導電コード２８が接続されて、導電バネ部材２７は昇降ブロック２０と電気的に導通した状態となっている。   The holding tool 12 has an overhanging portion 12c that extends horizontally from both ends at a position lower than the upper surface. When the holding tool 12 is held by the ceramic heater 23, the tool mounting surface 23a and the overhanging portion 12c A gap 25 is formed between the upper conductive contact surface 12d. A substantially L-shaped conductive spring member 27 is fixed to both side surfaces of the cooling jacket 22 by fixed terminals 26, and a conductive cord 28 connected to the elevating block 20 is further connected to the fixed terminals 26, so that the conductive springs are connected. The member 27 is electrically connected to the lifting block 20.

保持ツール１２をツール装着面２３ａに装着した状態では、導電バネ部材２７が屈曲して水平方向内側に延出した接触端部２７ａは、隙間２５内に進入し、導電接触面１２ｄに接触した状態となる。導電バネ部材２７は導電性の良好な金属の板バネ部材を曲げ加工して形成されており、保持ツール１２がセラミックヒータ２３から離脱して接触端部２７ａが自由端となった状態においては、接触端部２７ａは幾分下垂した形状（図２（ｂ）参照）となっている。そして保持ツール１２をセラミックヒータ２３に吸着保持させて、図２（ａ）に示すように、張出し部１２ｃが接触端部２７ａに接触して押し上げた状態では、接触端部２７ａは弾発力によって導電接触面１２ｄに押し付けられ、これにより導電バネ部材２７は保持ツール１２と導通する。すなわち、保持ツール１２は導電バネ部材２７、導電コード２８を介して昇降ブロック２０と導通する。   In a state in which the holding tool 12 is mounted on the tool mounting surface 23a, the contact end portion 27a that is bent and extends inward in the horizontal direction by the conductive spring member 27 enters the gap 25 and is in contact with the conductive contact surface 12d. It becomes. The conductive spring member 27 is formed by bending a metal plate spring member having good conductivity. In a state where the holding tool 12 is detached from the ceramic heater 23 and the contact end portion 27a becomes a free end, The contact end portion 27a has a somewhat drooping shape (see FIG. 2B). Then, when the holding tool 12 is attracted and held by the ceramic heater 23 and the overhanging portion 12c is pushed up in contact with the contact end portion 27a as shown in FIG. 2A, the contact end portion 27a is caused by the elastic force. The conductive spring member 27 is brought into conduction with the holding tool 12 by being pressed against the conductive contact surface 12d. That is, the holding tool 12 is electrically connected to the lifting block 20 through the conductive spring member 27 and the conductive cord 28.

これにより、装置稼動状態において保持ツール１２に滞留する電荷は導電バネ部材２７、導電コード２８、昇降ブロック２０を介して接地部に速やかに放電して帯電状態が解消される。上記構成において、導電バネ部材２７は保持ツール１２に当接して電気的に導通する導電部となっており、弾発力によって保持ツール１２に当接するバネ部材によって構成されている。そして導電コード２８は昇降ブロック２０と導電部とを電気的に接続する導電接続部材として機能している。   Thereby, the electric charge staying in the holding tool 12 in the operation state of the apparatus is quickly discharged to the grounding portion via the conductive spring member 27, the conductive cord 28, and the lifting block 20, and the charged state is eliminated. In the above configuration, the conductive spring member 27 is a conductive portion that comes into electrical contact with the holding tool 12 and is constituted by a spring member that comes into contact with the holding tool 12 by an elastic force. The conductive cord 28 functions as a conductive connection member that electrically connects the elevating block 20 and the conductive portion.

ここで、装置稼動状態における保持ツール１２の帯電現象およびこれに起因して発生す
る部品破損について説明する。近年の半導体部品の高密度化に伴って回路パターンの微細化が進行するに従い、半導体部品の電気的衝撃に対する耐性が不可避的に低下している。このため半導体部品を基板に実装する実装工程などにおいて、半導体部品が電気的衝撃によって破損する事例が発生しており、このような事例に対する対策が求められるようになっている。以下に説明する保持ツールの帯電現象に関する記述は、上述の課題を解決するために発明者が方策を追及する過程において明らかにされたものであり、従来においては知られていなかった新たな知見である。 Here, the charging phenomenon of the holding tool 12 in the operation state of the apparatus and the component breakage caused by this will be described. As the miniaturization of circuit patterns progresses with the recent increase in the density of semiconductor components, the resistance of semiconductor components to electrical shocks inevitably decreases. For this reason, in the mounting process of mounting a semiconductor component on a substrate, etc., there are cases in which the semiconductor component is damaged by an electrical shock, and countermeasures against such cases are required. The description regarding the charging phenomenon of the holding tool described below was clarified in the process of pursuing the measures by the inventor in order to solve the above-mentioned problems, and is a new finding that has not been known in the past. is there.

熱圧着ヘッド１６による熱圧着動作時には、セラミックヒータ２３に内蔵された発熱体２４の発熱回路に交流電流が流れ、これにより熱圧着ヘッド１６において発熱体２４を取り巻くように磁場が形成される。そしてこの磁場により、導電性の保持ツール１２には磁力を打ち消す方向に渦電流が発生し、この渦電流により保持ツール１２と装置本体の接地部との間には電位差が生じる。   At the time of the thermocompression bonding operation by the thermocompression bonding head 16, an alternating current flows through the heating circuit of the heating element 24 built in the ceramic heater 23, thereby forming a magnetic field so as to surround the heating element 24 in the thermocompression bonding head 16. Due to this magnetic field, an eddy current is generated in the conductive holding tool 12 in a direction to cancel the magnetic force, and a potential difference is generated between the holding tool 12 and the grounding portion of the apparatus main body due to the eddy current.

保持ツール１２と昇降ブロック２０との間には電気抵抗の高い絶縁体より成るセラミックヒータ２３が介在しているため、従来装置においては保持ツール１２と接地部との間に発生した電位差はそのまま保たれ、保持ツール１２は常に帯電した状態にあった。そして保持ツール１２に帯電していた電荷は、部品搭載動作において保持ツール１２に保持されたチップ６が基板に着地した瞬間に、チップ６を介して基板に向かって放電する。そしてこの放電により、チップ６の回路部分が電気的にダメージを受けて部品破損にいたる事例が発生する場合があった。このような事例は回路パターンの微細化に伴い、特に半導体装置を積層して実装するチップオンチップ構造においてより顕著になっている。   Since a ceramic heater 23 made of an insulator having a high electric resistance is interposed between the holding tool 12 and the lifting block 20, in the conventional apparatus, the potential difference generated between the holding tool 12 and the grounding portion is kept as it is. The holding tool 12 was always charged. The electric charge charged in the holding tool 12 is discharged toward the substrate through the chip 6 at the moment when the chip 6 held by the holding tool 12 lands on the substrate in the component mounting operation. In some cases, the circuit portion of the chip 6 is electrically damaged by this discharge, resulting in component breakage. Such cases have become more prominent in a chip-on-chip structure in which semiconductor devices are stacked and mounted as circuit patterns become finer.

本発明は上述の新たな知見に基づいてなされたものであり、従来は昇降ブロックとの間にセラミックヒータが介在することにより、装置本体から電気的に絶縁された状態となっていた保持ツールを、電気的に接地された状態に保つようにしたものである。これにより、微細回路パターンを有する半導体部品を熱圧着対象とする場合においても、本実施の形態に示す熱圧着装置によれば、半導体部品が帯電することによる半導体部品のダメージを防止することができる。   The present invention has been made on the basis of the above-mentioned new knowledge. Conventionally, a holding tool that has been electrically insulated from the apparatus main body by interposing a ceramic heater between the lifting block and the like is provided. , And kept in an electrically grounded state. Thereby, even when a semiconductor component having a fine circuit pattern is to be subjected to thermocompression bonding, according to the thermocompression bonding apparatus shown in the present embodiment, damage to the semiconductor component due to charging of the semiconductor component can be prevented. .

図３は、図２に示すセラミックヒータ２３に替えて、表面が導電性を有するセラミックヒータ１２３を用いた例を示している。図３において、冷却ジャケット２２の下面には、図２と同様の発熱体２４を内蔵したセラミックヒータ１２３が装着されている。ツール装着面１２３ａにはセラミックヒータ２３と同様に吸引孔１２３ｂが設けられており、吸引孔１２３ｂから真空吸引することによりツール装着面１２３ａには保持ツール１１２が吸着保持される。保持ツール１１２の吸着保持面１１２ｂには、図２に示す保持ツール１２と同様の吸引孔１１２ａが設けられており、保持ツール１１２をセラミックヒータ１２３に装着した状態では、吸引孔１１２ａはセラミックヒータ１２３、冷却ジャケット２２、結合軸部２１を貫通して真空吸引源と接続される。   FIG. 3 shows an example in which a ceramic heater 123 having a conductive surface is used instead of the ceramic heater 23 shown in FIG. In FIG. 3, a ceramic heater 123 containing a heating element 24 similar to that in FIG. 2 is attached to the lower surface of the cooling jacket 22. A suction hole 123b is provided in the tool mounting surface 123a similarly to the ceramic heater 23, and the holding tool 112 is sucked and held on the tool mounting surface 123a by vacuum suction from the suction hole 123b. The suction holding surface 112 b of the holding tool 112 is provided with a suction hole 112 a similar to the holding tool 12 shown in FIG. 2, and when the holding tool 112 is attached to the ceramic heater 123, the suction hole 112 a is the ceramic heater 123. The cooling jacket 22 and the coupling shaft portion 21 are connected to a vacuum suction source.

セラミックヒータ１２３の表面は、導電膜２９によって被覆されている。導電膜２９は酸化チタンの被膜より成るチタンコートによって形成されており、セラミックヒータ１２３の耐熱性・耐摩耗性を向上させるとともに、絶縁体より成るセラミックヒータ１２３に導電性を与える機能を有している。保持ツール１１２をセラミックヒータ１２３に装着した状態では、保持ツール１１２はセラミックヒータ１２３の導電膜２９を介して冷却ジャケット２２と導通し、さらに導電コード２８、昇降ブロック２０を介して装置本体の接地部と導通する。   The surface of the ceramic heater 123 is covered with a conductive film 29. The conductive film 29 is formed of a titanium coat made of a titanium oxide film, and has a function of improving the heat resistance and wear resistance of the ceramic heater 123 and imparting conductivity to the ceramic heater 123 made of an insulator. Yes. In a state where the holding tool 112 is mounted on the ceramic heater 123, the holding tool 112 is electrically connected to the cooling jacket 22 through the conductive film 29 of the ceramic heater 123, and is further connected to the grounding portion of the apparatus main body through the conductive cord 28 and the lifting block 20. Conducted with.

これにより、図２に示す例と同様に、装置稼動状態において保持ツール１１２に生じた帯電は速やかに導電膜２９、導電コード２８、昇降ブロック２０を介して接地部に放電し
て帯電状態が解消される。この例では、セラミックヒータ１２３の表面に形成された導電性被膜である導電膜２９が、導電部として機能している。このような構成を採用することにより、熱圧着ヘッドの構造を簡略化することができるとともに、保持ツールは広い接触面積で冷却ジャケット２２と導通し、安定した接地効果が実現される。なお導電性被膜としてはチタンコートに限定されるものではなく、他の種類のものを用いてもよく、ダイヤモンドコートなど耐熱性・耐摩耗性を有するものであれば望ましい。 As a result, as in the example shown in FIG. 2, the charge generated in the holding tool 112 in the operating state of the apparatus is quickly discharged to the grounding portion through the conductive film 29, the conductive cord 28, and the lifting block 20, and the charged state is eliminated. Is done. In this example, the conductive film 29 which is a conductive film formed on the surface of the ceramic heater 123 functions as a conductive portion. By adopting such a configuration, the structure of the thermocompression bonding head can be simplified, and the holding tool is electrically connected to the cooling jacket 22 with a wide contact area, thereby realizing a stable grounding effect. The conductive coating is not limited to titanium coating, but other types of coating may be used, and any coating having heat resistance and wear resistance such as diamond coating is desirable.

また図４に示すように、熱圧着ヘッド１６において、保持ツール１２の電位を計測するために、導電バネ部材２７を電位計測器３１、パーソナルコンピュータ３２と接続するようにしてもよい。すなわち、図２に示す例において冷却ジャケット２２の両側端部に２つ設けられた導電バネ部材２７のうち、１つを導電コード２８を介して昇降ブロック２０と導通させ、他を導電コード３０を介して電位計測器３１に接続する。   As shown in FIG. 4, in the thermocompression bonding head 16, the conductive spring member 27 may be connected to the potential measuring device 31 and the personal computer 32 in order to measure the potential of the holding tool 12. That is, in the example shown in FIG. 2, one of the two conductive spring members 27 provided at both end portions of the cooling jacket 22 is electrically connected to the lifting block 20 via the conductive cord 28, and the other is connected to the conductive cord 30. To the potential measuring device 31.

これにより、保持ツール１２の電位を電位計測器３１によって計測し、計測結果をパーソナルコンピュータ３２によって取り込むことが可能となり、装置稼動状態において必要に応じて保持ツール１２の帯電状態を監視することができる。すなわちこの例では、導電部は２系統の導通経路を備え、一方は前記導電接続部材である導電コード２８と導通し、他方は保持ツール１２の帯電状態を計測する計測手段である電位計測器３１と導通する構成となっている。   As a result, the potential of the holding tool 12 can be measured by the potential measuring device 31, and the measurement result can be captured by the personal computer 32. The charged state of the holding tool 12 can be monitored as necessary in the apparatus operating state. . That is, in this example, the conductive portion has two conduction paths, one is conductive with the conductive cord 28 that is the conductive connecting member, and the other is a potential measuring device 31 that is a measuring unit that measures the charged state of the holding tool 12. It is the structure which conducts.

次に図５を参照して、熱圧着装置による部品圧着動作を説明する。まず図５（ａ）に示すように、熱圧着ヘッド１６を保持テーブル３上の部品トレイ５の上方へ移動させ、実装対象となるチップ６に熱圧着ヘッド１６を位置合わせして下降させる。そして保持ツール１２をチップ６に当接させ、吸引孔１２ａから真空吸引してチップ６を吸着保持する。この後、熱圧着ヘッド１６によってチップ６を部品トレイ５から取り出して、図５（ｂ）に示すように、基板４上へ移動させる。   Next, the component crimping operation by the thermocompression bonding apparatus will be described with reference to FIG. First, as shown in FIG. 5A, the thermocompression bonding head 16 is moved above the component tray 5 on the holding table 3, and the thermocompression bonding head 16 is aligned with the chip 6 to be mounted and lowered. Then, the holding tool 12 is brought into contact with the chip 6, and vacuum suction is performed from the suction hole 12a to hold the chip 6 by suction. Thereafter, the chip 6 is taken out of the component tray 5 by the thermocompression bonding head 16 and moved onto the substrate 4 as shown in FIG.

このときセラミックヒータ２３は作動状態にあり、保持ツール１２を介してのチップ６の加熱が開始される。この加熱過程において、保持ツール１２にはセラミックヒータ２３の発熱体２４に交流電流が流れることによる渦電流が発生するが、前述のように保持ツール１２は電気的に接地された状態にあるため、装置本体の接地部との間に電位差が発生しない。   At this time, the ceramic heater 23 is in an operating state, and heating of the chip 6 via the holding tool 12 is started. In this heating process, an eddy current is generated in the holding tool 12 due to an alternating current flowing through the heating element 24 of the ceramic heater 23. However, since the holding tool 12 is electrically grounded as described above, No potential difference occurs between the grounding part of the device body.

そして熱圧着ヘッド１６がこの位置において待機した状態で、図５（ｂ）に示すように、撮像ユニット８を基板４と熱圧着ヘッド１６との間に進出させ、撮像ユニット８に備えられた２視野光学系によって、チップ６と基板４とを同一撮像動作で撮像する。撮像結果は認識処理部（図示省略）によって認識処理され、チップ６と基板４の電極４ａが認識される。そしてこの認識結果に基づいて、チップ６と電極４ａとの位置合わせが行われる。   Then, with the thermocompression bonding head 16 waiting at this position, the imaging unit 8 is advanced between the substrate 4 and the thermocompression bonding head 16 as shown in FIG. The chip 6 and the substrate 4 are imaged by the same imaging operation by the field optical system. The imaging result is recognized by a recognition processing unit (not shown), and the chip 6 and the electrode 4a of the substrate 4 are recognized. Based on the recognition result, the chip 6 and the electrode 4a are aligned.

この後撮像ユニット８が熱圧着ヘッド１６の下方から退避したならば、図５（ｃ）に示すように、熱圧着ヘッド１６を下降させて、チップ６を基板４に着地させ、所定の押圧荷重で押圧状態を保持する。このとき、保持ツール１２と接地部との間には電位差が存在せず帯電状態にないため、保持ツール１２が帯電状態のまま部品圧着動作を実行することに起因する電気的な部品破損が発生しない。   Thereafter, if the imaging unit 8 is retracted from below the thermocompression bonding head 16, the thermocompression bonding head 16 is lowered to land the chip 6 on the substrate 4 as shown in FIG. Hold the pressed state. At this time, since there is no potential difference between the holding tool 12 and the grounding portion and there is no charging state, electrical component damage caused by performing the component crimping operation while the holding tool 12 is in a charged state occurs. do not do.

本発明の半導体部品の熱圧着装置は、保持ツールへの帯電を防止して半導体部品の電気的なダメージを防止することができるという効果を有し、チップオンチップ構造の半導体装置の製造分野など、微細パターンを有する半導体部品を熱圧着により実装する分野に有用である。   The thermocompression bonding apparatus for a semiconductor component according to the present invention has an effect of preventing the holding tool from being electrically charged to prevent electrical damage to the semiconductor component, such as a manufacturing field of a semiconductor device having a chip-on-chip structure. It is useful in the field of mounting a semiconductor component having a fine pattern by thermocompression bonding.

本発明の一実施の形態の半導体部品の熱圧着装置の正面図The front view of the thermocompression bonding apparatus of the semiconductor component of one embodiment of this invention 本発明の一実施の形態の半導体部品の熱圧着装置の熱圧着ヘッドの構造説明図Structure explanatory drawing of the thermocompression-bonding head of the thermocompression-bonding apparatus for semiconductor components according to one embodiment of the present invention 本発明の一実施の形態の半導体部品の熱圧着装置の熱圧着ヘッドの構造説明図Structure explanatory drawing of the thermocompression-bonding head of the thermocompression-bonding apparatus for semiconductor components according to one embodiment of the present invention 本発明の一実施の形態の半導体部品の熱圧着装置の熱圧着ヘッドの構造説明図Structure explanatory drawing of the thermocompression-bonding head of the thermocompression-bonding apparatus for semiconductor components according to one embodiment of the present invention 本発明の一実施の形態の半導体部品の熱圧着装置の動作説明図Operation | movement explanatory drawing of the thermocompression bonding apparatus of the semiconductor component of one embodiment of this invention

符号の説明Explanation of symbols

１ 熱圧着装置
４ 基板
６ チップ
１０ ツール交換部
１２ 保持ツール
１３ 実装機構部
１６ 熱圧着ヘッド
２０ 昇降ブロック
２２ 冷却ジャケット
２３、１２３ セラミックヒータ
２４ 発熱体
２７ 導電バネ部材（導電部）
２８ 導電コード（導電接続部材）
２９ 導電膜（導電性被膜）
３１ 電位計測器（計測手段） DESCRIPTION OF SYMBOLS 1 Thermocompression bonding apparatus 4 Substrate 6 Chip 10 Tool exchange part 12 Holding tool 13 Mounting mechanism part 16 Thermocompression bonding head 20 Lifting block 22 Cooling jacket 23, 123 Ceramic heater 24 Heating element 27 Conductive spring member (conductive part)
28 Conductive cord (conductive connection member)
29 Conductive film (conductive film)
31 Electric potential measuring instrument (measuring means)

Claims (5)

半導体部品を基板に熱圧着する半導体部品の熱圧着装置であって、
前記基板に対して昇降し電気的に接地された導電性の昇降ブロックと、前記昇降ブロックに設けられ交流電圧を印加することにより発熱するセラミックヒータと、前記セラミックヒータに着脱自在に装着され前記半導体部品に当接して保持する保持ツールと、前記保持ツールに当接して電気的に導通する導電部と、前記昇降ブロックと前記導電部とを電気的に接続する導電接続部材とを備えたことを特徴とする半導体部品の熱圧着装置。 A semiconductor component thermocompression bonding apparatus for thermocompression bonding a semiconductor component to a substrate,
A conductive lifting block that is raised and lowered with respect to the substrate and is electrically grounded, a ceramic heater that is provided in the lifting block and generates heat when an AC voltage is applied thereto, and is detachably mounted on the ceramic heater and the semiconductor A holding tool that contacts and holds the component; a conductive portion that contacts the holding tool and is electrically connected; and a conductive connection member that electrically connects the lifting block and the conductive portion. A thermocompression bonding apparatus for semiconductor parts. ノズル収納部に収納された保持ツールと前記セラミックヒータに装着された保持ツールとを交換するツール交換手段を備えたことを特徴とする請求項１記載の半導体部品の熱圧着装置。   2. The thermocompression bonding apparatus for semiconductor parts according to claim 1, further comprising a tool exchanging means for exchanging the holding tool accommodated in the nozzle accommodating portion and the holding tool attached to the ceramic heater. 前記導電部は弾発力によって前記保持ツールに当接するバネ部材であることを特徴とする請求項１記載の半導体部品の熱圧着装置。   2. The semiconductor component thermocompression bonding apparatus according to claim 1, wherein the conductive portion is a spring member that comes into contact with the holding tool by an elastic force. 前記導電部は前記セラミックヒータの表面に形成された導電性被膜であることを特徴とする請求項１記載の半導体部品の熱圧着装置。   2. The thermocompression bonding apparatus for a semiconductor component according to claim 1, wherein the conductive portion is a conductive film formed on a surface of the ceramic heater. 前記導電部は２系統の導通経路を備え、一方は前記導電接続部材と導通し、他方は前記保持ツールの帯電状態を計測する計測手段と導通することを特徴とする請求項１記載の半導体部品の熱圧着装置。
2. The semiconductor component according to claim 1, wherein the conductive portion includes two conduction paths, one of which is connected to the conductive connecting member, and the other is connected to a measuring unit that measures a charged state of the holding tool. Thermocompression bonding equipment.
JP2006037458A 2006-02-15 2006-02-15 Semiconductor parts thermocompression bonding equipment Expired - Fee Related JP4508124B2 (en)

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WO2022124780A1 (en) * 2020-12-08 2022-06-16 주식회사 미코세라믹스 Bonding head and bonding device having same
CN117096072A (en) * 2023-10-20 2023-11-21 苏州锐杰微科技集团有限公司 Hot press for chip production and working method thereof

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JP2012064702A (en) * 2010-09-15 2012-03-29 Hitachi High-Tech Instruments Co Ltd Die bonder and semiconductor manufacturing method
CH706512A1 (en) * 2012-05-15 2013-11-15 Besi Switzerland Ag Tool for welding semiconductor chip used in semiconductor industry, has heater that is separated from inhaler and gas in pressurization state flow through gap
KR20140094458A (en) * 2013-01-21 2014-07-30 베시 스위처랜드 아게 Bonding head with a heatable and coolable suction member
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KR102228798B1 (en) * 2013-01-21 2021-03-17 베시 스위처랜드 아게 Bonding head with a heatable and coolable suction member
KR20180108066A (en) * 2017-03-24 2018-10-04 주식회사 미코 Bonding head and apparatus for bonding chips having the bonding head
KR102347123B1 (en) * 2017-03-24 2022-01-05 주식회사 미코세라믹스 Bonding head and apparatus for bonding chips having the bonding head
WO2022124780A1 (en) * 2020-12-08 2022-06-16 주식회사 미코세라믹스 Bonding head and bonding device having same
CN117096072A (en) * 2023-10-20 2023-11-21 苏州锐杰微科技集团有限公司 Hot press for chip production and working method thereof
CN117096072B (en) * 2023-10-20 2024-02-02 苏州锐杰微科技集团有限公司 Hot press for chip production and working method thereof

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