TW201919162A - Package structure - Google Patents

Abstract

A package structure is provided, including a first insulating layer, a second insulating layer, a third insulating layer, and a chip. The second insulating layer is disposed on the first insulating layer, the chip is disposed in the second insulating layer, and the third insulating layer is disposed on the second insulating layer. The heat transfer coefficient of the second insulating layer is less than the heat transfer coefficient of the first insulating layer, and the hardness of the second insulating layer is less than the hardness of the first insulating layer.

Description

Package structure

The present invention relates to a packaging structure, and particularly to a packaging structure that enhances heat conduction function.

The integrated circuit (IC) industry has experienced exponential growth. The improvement of integrated circuit materials and design technology has produced several generations of integrated circuits. Each generation of integrated circuits has smaller and more complex circuits than the previous generation, and has been used in various kinds of daily life. In the device (such as mobile phones, transformers, batteries, cars, etc.). In order to further increase the efficiency of integrated circuit devices, the industry is committed to seeking various miniaturization methods that can increase production efficiency and reduce related costs. For example, in a mobile phone, since the substrate occupies a certain space, the space of other components (such as a battery) is limited. If the space occupied by the substrate can be reduced, these additional spaces can be flexibly used to meet the needs of users.

Various package structures are used to reduce the size of the substrate. For a package structure in a device that requires a large current, a large current will generate more heat. If the heat is accumulated in the above device, it may cause Reduced efficiency or damage to the device. Therefore, how to achieve the further heat dissipation of the package structure has become an important issue.

The invention provides a packaging structure, including: a first insulating layer, a second insulating layer, a third insulating layer, and a chip. The second insulating layer is provided on the first insulating layer, the wafer is provided in the second insulating layer, and the third insulating layer is provided on the second insulating layer. The thermal conductivity of the second insulating layer is less than the thermal conductivity of the first insulating layer, and the hardness of the second insulating layer is less than the hardness of the first insulating layer.

The packaging structure as described in some embodiments of the present invention, wherein the material of the first insulating layer includes a ceramic material, and the material of the second insulating layer includes a resin material. The material of the second insulating layer does not include glass fiber. The thermal conductivity of the second insulating layer is less than the thermal conductivity of the third insulating layer, and the hardness of the second insulating layer is less than the hardness of the third insulating layer. The material of the third insulating layer includes ceramic material.

According to the packaging structure described in some embodiments of the present invention, the third insulating layer includes a metal layer and an insulating film, and the insulating film is disposed on the metal layer. The above packaging structure further includes an elastic layer and electronic components, which are disposed on the first insulating layer. The thermal conductivity of the first insulating layer is less than the thermal conductivity of the third insulating layer, and the hardness of the first insulating layer is less than the hardness of the third insulating layer. The thickness of the ceramic material in the first insulating layer is greater than 50% of the thickness of the first insulating layer. The thickness of the second insulating layer is greater than the thickness of the first insulating layer and the thickness of the third insulating layer, and the thickness of the third insulating layer is greater than the thickness of the first insulating layer.

According to the packaging structure of some embodiments of the present invention, the material of the first insulating layer includes a metal layer and a first insulating film, the material of the second insulating layer includes a resin material, and the first insulating film is disposed on the metal layer, The material of the third insulating layer includes ceramic material. The third insulating layer includes a metal layer and a second insulating film. The metal layer includes a conductive portion and an insulating portion, and the conductive portion is electrically isolated from the insulating portion. Viewed from the direction parallel to the interface between the first insulating layer and the second insulating layer, the first insulating layer and the second insulating layer do not overlap, and the second insulating layer and the third insulating layer do not overlap. The packaging structure further includes a first wire layer, a second wire layer, and a via hole, wherein the first wire layer is disposed between the first insulating layer and the second insulating layer, and the second wire layer is disposed between the second insulating layer and the third Between the insulating layers, the via holes are electrically connected to the chip, the first wire layer, and the second wire layer.

Many different implementation methods or examples are disclosed below to implement the different features of the provided subject matter. The following describes specific elements and their arrangement of embodiments to illustrate the present invention. Of course, these embodiments are for illustration only, and should not be used to limit the scope of the present invention.

In addition, repeated reference numerals or marks may be used in different embodiments. These repetitions are merely a simple and clear description of the present invention and do not represent a specific relationship between the different embodiments and / or structures discussed. In addition, forming, connecting to, and / or coupling to another feature in the present invention may include an embodiment in which the feature is formed in direct contact, and may also include in which the above-described insert may be formed Embodiments of additional feature parts of the feature parts such that the above feature parts may not be in direct contact. In addition, space-related terms may be used, such as "below", "below", "horizontal", "vertical", "above", "higher", "below", "lower" "," Up "," down "," top "," bottom "and similar terms (such as" horizontally "," downwardly "," upwardly ", etc.), these spatially related terms are for convenience Describe the relationship between one element (s) or feature and another element (s) in the illustration. These spatially related terms are intended to cover different directions of the device that includes the feature.

Please refer to FIG. 1A, which illustrates a package structure 1a according to an embodiment. The package structure 1a mainly includes a first insulating layer 10r, a second insulating layer 20, a third insulating layer 30r, a chip 40, and an interconnect structure for electrically connecting the chip 40 with other external components. The first insulating layer 10r is provided on the second insulating layer 20, the second insulating layer 20 is provided on the third insulating layer 30r, and the wafer 40 is provided in the second insulating layer 20.

The above interconnect structure includes a wire layer 50 disposed on the first insulating layer 10r, a wire layer 51 disposed between the first insulating layer 10r and the second insulating layer 20, a second insulating layer 20 and a third insulating layer The lead layer 52 between 30r, the lead layer 53 provided on the third insulating layer 30r, the via hole 60 provided in the first insulating layer 10r, the via holes 61, 62 provided in the second insulating layer 20, and the arrangement The via hole 63 in the third insulating layer 30r. A conductive pad 70 is also provided between the wafer 40 and the via 61. The passivation layer 80 and the passivation layer 81 are respectively disposed on the surfaces of the first insulating layer 10r and the third insulating layer 30r facing the outside of the packaging structure 1a, and cover part of the wire layer 50 and the wire layer 53 respectively.

In addition, after the second insulating layer 20 is formed, a suitable pressing process (such as a hot pressing process) may be used to combine the first insulating layer 10r and the third insulating layer 30r with the second insulating layer 20 to form the above-mentioned package structure 1a.

In the above interconnect structure, the via hole 60 is electrically connected to the lead layers 50 and 51, the via hole 61 is electrically connected to the lead layer 52, and the chip 40 is electrically connected to the via pad 70, and the via hole 62 is electrically connected to the lead layer 51 , 52, the via 63 is electrically connected to the lead layers 52, 53. It should be understood that the positions of the wire layers 50, 51, 52, and 53 and the guide holes 60, 61, 62, and 63 shown above are only exemplary, and their actual configurations may vary according to design and manufacturing requirements. Although the guide holes 60, 61, 62, and 63 are depicted as trapezoids, the present invention is not limited thereto. For example, a suitable process (such as a drilling process) can also be used so that the via hole has straight side walls. In addition, although an interface is shown between the wire layer and the via hole in FIG. 1A, it is only an example, and there can be no obvious interface between the wire layer and the via hole by a suitable process. The wire layers 50, 51, 52, and 53 can be formed by, for example, laser bonding.

The wire layers 50, 51, 52, and 53 and the via holes 60, 61, 62, and 63 may include suitable conductive materials, such as tungsten, aluminum, cobalt, or copper. Those of ordinary skill in the art will understand that other conductive materials for the wire layers 50, 51, 52, 53 and the vias 60, 61, 62, 63 are within the scope and spirit of this embodiment.

The passivation layers 80 and 81 are used to protect various components in the packaging structure 1a, and the passivation layers 80 and 81 have a plurality of openings to expose portions of the wire layers 50 and 53 to connect with external circuits. In some embodiments, the passivation layers 80 and 81 are formed of silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof. In some embodiments, the passivation layers 80 and 81 are formed of polymers. In some embodiments, the passivation layers 80 and 81 are formed by a chemical vapor deposition process, a spin coating process, a sputtering process, or a combination thereof.

The materials of the first insulating layer 10r and the third insulating layer 30r may be the same or similar resin materials, such as FR-4 or BT (Bismaleimide Triazine, bismaleimide-triazine) and other resin materials. The material of the second insulating layer 20 may be different from the first insulating layer 10r and the third insulating layer 30r, for example, other resin materials having higher thermal conductivity than the first insulating layer 10r and the third insulating layer 30r. In addition, the second insulating layer 20 does not need to use glass fiber, which can reduce the manufacturing cost and simplify the manufacturing process. However, under the condition that both the first insulating layer 10r and the third insulating layer 30r are formed of a resin material with a low thermal conductivity (for example, <2W / mK), the components (such as the chip 40 or other peripheral components) in the package structure 1a ) The heat generated during operation is more difficult to be effectively led out of the package structure 1a, so it will cause the overall structure temperature to increase, which in turn will limit the performance.

Please refer to FIG. 1B, which illustrates a package structure 1b according to an embodiment of the present invention. The packaging structure 1b is similar to the packaging structure 1a described above. The difference is that the first insulating layer 10c of the packaging structure 1b is different from the first insulating layer 10r of the packaging structure 1a. The details of the same or similar components are not repeated here.

In this embodiment, the first insulating layer 10c is formed using a ceramic material having a higher thermal conductivity than the first insulating layer 10r, such as a suitable ceramic material such as alumina or aluminum nitride. The thermal conductivity of the first insulating layer 10c is greater than 20 W / mK, for example. With this arrangement, the heat generated by the chip 40 in the packaging structure 1b can be conducted to the outside at a faster rate, thereby improving the overall performance. In addition, the direction of heat dissipation can also be controlled. Furthermore, compared to the first insulating layer 10r made of resin, the first insulating layer 10c made of ceramic is less likely to deform and has a higher hardness, so that the package structure 1b is less likely to warp, thereby increasing the connection Reliability. In addition, after the first insulating layer 10c is bonded to the second insulating layer 20 made of resin material, since the surface of the first insulating layer 10c is rough, the bonding strength with the second insulating layer 20 can be improved.

It should be noted that the thickness of the ceramic material in the first insulating layer 10c is greater than 50% of the total thickness of the first insulating layer 10c. In this way, sufficient ceramic material can be ensured in the first insulating layer to achieve the aforementioned advantages. In addition, when viewed in the X direction in FIG. 1B (parallel to the interface between the first insulating layer 10c and the second insulating layer 20), the first insulating layer 10c and the second insulating layer 20 of the package structure 1b do not overlap, Moreover, the second insulating layer 20 and the third insulating layer 30r do not overlap. With this configuration, the manufacturing process of the packaging structure 1b can be simplified and the cost can be reduced. Furthermore, when viewed in the Z direction in FIG. 1B (the direction perpendicular to the interface between the first insulating layer 10c and the second insulating layer 20), the first insulating layer 10c and the third insulating layer 30r at least partially overlap the wafer 40 Therefore, the heat conduction effect in the Z direction can be further improved.

In addition, the first insulating layer 10c and the second insulating layer 20 are separately formed in different steps, and then combined with a suitable process (such as a hot pressing process) to prevent damage in the process of forming the first insulating layer 10c The second insulating layer 20 and the wafer 40 in the second insulating layer 20.

Please refer to FIG. 1C, which illustrates a package structure 1c according to another embodiment of the present invention. The packaging structure 1c is similar to the packaging structure 1a described above, except that the first insulating layer 10c and the third insulating layer 30c of the packaging structure 1c are different from the first insulating layer 10r and the third insulating layer 30r of the packaging structure 1a, and the rest are the same or similar The details of the components are not repeated here. In this embodiment, the first insulating layer 10c and the third insulating layer 30c are formed using a ceramic material having a higher thermal conductivity than the first insulating layer 10r and the third insulating layer 30r, such as aluminum oxide or aluminum nitride. Ceramic material. Therefore, the heat dissipated by the wafer 40 can be further led out to avoid the problem of overheating and improve the overall performance. In addition, the direction of heat dissipation can also be controlled. Furthermore, compared to the first insulating layer 10r and the third insulating layer 30r made of resin, the first insulating layer 10c and the third insulating layer 30c made of ceramic are less likely to deform and have a higher hardness, so the package structure 1c can be made The problem of warpage is less likely to occur, thereby increasing the reliability of the connection. In addition, after the first insulating layer 10c and the third insulating layer 30c are joined to the second insulating layer 20 made of resin material, since the surfaces of the first insulating layer 10c and the third insulating layer 30c are rough, the The bonding strength of the insulating layer 20.

Please refer to FIG. 1D, which illustrates a package structure 1d according to another embodiment of the present invention. The packaging structure 1d is similar to the foregoing packaging structure 1b, the difference is that an elastic layer E is further provided on the first insulating layer 10c and the third insulating layer 30r, and the details of the same or similar components will not be repeated here. The material of the elastic layer E is, for example, an elastic material such as resin. In addition, it does not contain glass fibers, and the elastic layer E can be bonded to the first insulating layer 10c. In this way, even if the first insulating layer 10c is cracked by an external force, the elastic layer E can tightly adhere the cracked first insulating layer 10c to prevent the debris from scattering and causing damage to the device.

Please refer to FIG. 1E, which illustrates a package structure 1e according to another embodiment of the present invention. The packaging structure 1e is similar to the foregoing packaging structure 1a, except that the first insulating layer of the packaging structure 1e is replaced from the first insulating layer 10r with an insulating film F on the upper and lower sides, and is formed of a metal material (such as aluminum or copper) The first insulating layer of 10m, the details of the remaining same or similar components will not be repeated here. The insulating film F can be formed by, for example, anodizing or other methods to prevent short circuit between the metallic material in the first insulating layer 10m and other conductive structures (such as the aforementioned interconnect structure).

Since the first insulating layer 10m is formed of a material with a higher thermal conductivity than the first insulating layer 10c, the heat generated during the operation of the components in the package structure 1e can be further extracted to prevent overheating and control the direction of heat dissipation And the advantages of improving efficiency. In addition, since the first insulating layer 10m made of a metal material has better ductility than resin, and the hardness of the first insulating layer 10m is higher than that of the second insulating layer 20, the provision of the first insulating layer 10m can also improve the correspondence The impact resistance of other parts in contact with the impact. Furthermore, the thickness of the first insulating layer 10m can be set to be less than 0.1 μm, so the package structure 1e can be further miniaturized.

Since the first insulating layer 10m is made of metal with an insulating film F, a special structure is required to allow electrical conduction up and down. Please refer to Figure 1F, which is an enlarged view of area R in Figure 1E. The first insulating layer 10m made of metal has a conductive portion 11 and an insulating portion 12, and the conductive portion 11 and the insulating portion 12 are separated by an insulating portion H. In this embodiment, the insulating film F is not provided between the two isolation portions H, and the conductive portion 11 is directly and electrically connected to the wire layer 51 arranged above the conductive portion 11 and the wire layer 50 arranged under the conductive portion 31 The insulating portion 12 does not directly connect the wire layer 51 directly above the conductive portion 11 and the wire layer 50 arranged directly below the conductive portion 31. In the insulating portion H, no element (ie, filled with air) may be provided, or a suitable insulating material may be provided to prevent interference or short circuit between the conductive portion 11 and the insulating portion 12. That is, the conductive portion 11 is electrically independent locally. In addition, different materials may be used to form the conductive portion 11 and the wire layer 51 to facilitate processing and improve conductivity.

Please refer to FIG. 1G, which illustrates a package structure 1f according to another embodiment of the present invention. The packaging structure 1f is similar to the foregoing packaging structure 1a, except that the first insulating layer 10m and the third insulating layer 30m of the packaging structure 1f are formed of metal materials (such as aluminum or copper).

An insulating film (not shown) is provided on both the first insulating layer 10m and the third insulating layer 30m to prevent short circuit between the metal material and other conductive structures (such as the aforementioned interconnect structure). Insulating films can be provided on the upper and lower surfaces of the first insulating layer 10m and the third insulating layer 30m, respectively, to ensure the insulating effect in all directions. By providing a metal material with a high thermal conductivity, the heat dissipation capacity of the package structure 1f can be further enhanced to prevent overheating and improve efficiency. In addition, since the first insulating layer 10m and the third insulating layer 30m made of metal are provided on the upper side and the lower side of the package structure 1f, respectively, electromagnetic interference from the outside of the package structure 1f can be prevented, making the operation more accurate and eliminating the need for In order to reduce electromagnetic interference, a metal is additionally plated outside the package structure 1f.

Please refer to FIG. 1H, which illustrates a package structure 1g according to another embodiment of the present invention. Different from the foregoing embodiment, in this embodiment, a combination of a first insulating layer 10m made of a metal material and a third insulating layer 30c made of a ceramic material is used. Since the thermal conductivity of the first insulating layer 10m made of metal material and the third insulating layer 30c made of ceramic material are higher than that of resin material, the heat generated during the operation of the package structure 1g can be further exported to prevent overheating and increase performance . In addition, since the space required for the third insulating layer 30c made of ceramic material is small, this structure can be used in places where the size is required to be both miniaturized and increase the heat dissipation effect.

Please refer to FIG. 1I, which illustrates a package structure 1h according to another embodiment of the present invention. In this embodiment, the first insulating layer 10r 'and the third insulating layer 30r' are formed of a resin material doped with a conductive material. For example, conductive materials such as aluminum oxide, aluminum nitride, gold powder, silver powder, and graphite can be doped to increase the thermal conductivity while the first insulating layer 10r 'and the third insulating layer 30r' still maintain electrical insulation. In turn, the heat dissipation rate of the package structure is increased for 1h, and a higher performance is achieved.

Please refer to FIG. 1J, which illustrates a package structure 1i according to another embodiment of the invention. Different from the foregoing embodiments, the thickness of each insulating layer of the packaging structure 1i is different. As shown in FIG. 1J, the third insulating layer 30 plus the passivation layer 81 (upper insulating layer) has a thickness A, the second insulating layer 20 has a thickness B, and the first insulating layer 10 plus the passivation layer 80 (lower insulating layer ) Has a thickness C, where thickness B> thickness C> thickness A. Since the upper insulating layer only needs to be insulated from the passive component or the outside world, it can reduce its thickness and achieve the effect of miniaturization. The lower insulating layer needs to be connected to the circuit board and bear the impact, so if the thickness C is set to be greater than the thickness A of the upper insulating layer, a better protection effect can be achieved. Since the second insulating layer 20 is provided with resin and various elements (for example, the wafer 40 or other integrated circuit elements), the thickness B is set to be greater than the thickness A and the thickness C.

In some embodiments, a suitable material may also be selected so that the thermal conductivity of the first insulating layer is less than the thermal conductivity of the third insulating layer, and the hardness of the first insulating layer is less than the hardness of the third insulating layer, which increases the flexibility of design To meet various needs.

Please refer to FIG. 2A, which illustrates a package structure 2a according to another embodiment of the present invention. The packaging structure 2a is similar to the foregoing packaging structure 1c, except that an insulating layer 90m is further provided on the first insulating layer 10c. The insulating layer 90m can be formed using the same or similar metal material as the first insulating layer 10m and the third insulating layer 30m of the foregoing embodiments, and has an insulating film (not shown) on the insulating layer 90m to prevent the insulating layer 90m The metal material is short-circuited with other components. On both sides of the insulating layer 90m, a wire layer 54 and a wire layer 55 for connecting to an external circuit, and a passivation layer 82 and a passivation layer 83 respectively provided on the wire layer 54 and the wire layer 55 are provided. The materials, processes, and uses of the passivation layer 82 and the passivation layer 83 are similar to those of the aforementioned passivation layers 80 and 81, and will not be repeated here. A guide hole 64 is also provided in the insulating layer 90m for electrically connecting the wire layer 54 and the wire layer 55.

In FIG. 2A, the width of the insulating layer 90m is wider than that of the first insulating layer 10c and the third insulating layer 30c, so that additional components (such as other passive components) can be placed on the insulating layer 90m to achieve more efficiency Space utilization. In addition, since the flatness of the insulating layer 90m formed of a metal material is easier to control, providing the insulating layer 90m in the packaging structure 2a can make the packaging structure 2a have better flatness. Furthermore, since an insulating layer 90m with a high thermal conductivity is additionally provided, the heat dissipation efficiency can be further enhanced.

Please refer to FIG. 2B, which illustrates a package structure 2b according to another embodiment of the invention. The difference between the package structure 2b and the aforementioned package structure 2a is that the package structure 2b is made of a first insulating layer 10m made of metal, a third insulating layer 30m, and an insulating layer 90c made of ceramic, while other identical or similar components are described in This will not be repeated here. By providing an insulating layer 90c with a larger width than the first insulating layer 10m and the third insulating layer 30m in the packaging structure 2b, the heat dissipation effect of the overall structure is improved. In addition, other elements (for example, passive elements) may be further provided on the insulating layer 90c to use space more efficiently.

Please refer to FIG. 3A, which illustrates a package structure 3a according to another embodiment of the present invention. In this embodiment, unlike the aforementioned packaging structure 1c, another packaging structure may be provided on the first insulating layer 10c, which includes an insulating layer 100 (similar to the second insulating layer 20) and a metal insulating layer 110m. An insulating film (not shown) similar to the first insulating layer 10m and the third insulating layer 30m described above is provided on the insulating layer 110m to prevent the metal material in the insulating layer 110m from contacting with other elements to short-circuit.

In FIG. 3A, a conductive layer 56 and a conductive layer 57 are respectively provided on the upper and lower sides of the insulating layer 100, wherein the conductive layer 56 is disposed between the insulating layer 100 and the first insulating layer 10c, and is electrically connected to the via hole 60 And the wire layer 57 is disposed between the insulating layer 100 and the insulating layer 110m. A wire layer 58 is provided on the face of the insulating layer 110m facing away from the insulating layer 100, and a passivation layer 84 is provided on the wire layer 58. In addition, a wafer 41 is provided in the insulating layer 100, and the wafer 41 is electrically connected to the wire layer 56 through the conductive pad 71 and the via hole 67. The lead layer 56 is electrically connected to the lead layer 57 via the via 65 provided in the insulating layer 100, the lead layer 57 is electrically connected to the lead layer 58 via the via 66 provided in the insulating layer 110m, and the lead layer 58 Electrically connected to external circuits.

The packaging structure 3a allows multiple layers of components to be arranged in the same packaging structure, thereby increasing the efficiency of space utilization, achieving the effect of miniaturization of the mechanism, and increasing the design freedom of the IC package. In addition, since the package structure 3a uses the ceramic first insulating layer 10c, the third insulating layer 30c and the metal insulating layer 110m which have a higher thermal conductivity than the conventional resin material, the components in the package structure 3a can be generated during operation The heat is dissipated more quickly to prevent overheating and increase efficiency.

Although the package structure 3a in the embodiment of FIG. 3A uses the ceramic first insulating layer 10c, the third insulating layer 30c, and the metal insulating layer 110m, the present invention is not limited to this. The materials of the above components can be replaced according to the setting requirements. For example, please refer to FIG. 3B, which illustrates a package structure 3b according to another embodiment of the present invention. In this embodiment, the first insulating layer 10m made of metal, the third insulating layer 30m and the insulating layer 110c made of ceramic are used. This structure can also increase the heat conduction efficiency, achieve the effect of miniaturization of the mechanism, and increase the design freedom of the IC package.

Please refer to FIG. 4A, which illustrates a package structure 5a according to another embodiment of the present invention. In the packaging structure 5a, the arrangement and materials of the first insulating layer 10 and the third insulating layer 30 may be the same as or similar to the first insulating layers 10c, 10m and the third insulating layers 30c, 30m of the foregoing embodiments. In this embodiment, a plurality of wafers 40 can be simultaneously arranged in the horizontal direction, and electronic components 120 (such as various passive components, etc.) can be disposed above the packaging structure 5a, and solder balls 130 can be disposed on the other side of the packaging structure 5a, to Welding with other external components. Since the first insulating layer 10 and the third insulating layer 30 with better mechanical strength and flatness are used, even if a plurality of chips are buried in the second insulating layer 20, the accuracy of the manufacturing process will not be affected. In addition, it can also improve the connection effect between the layers and enhance the overall integrity.

However, the present invention is not limited to this. For example, depending on design requirements, passive components can be placed in different directions and positions and the structure can be changed. For example, please refer to FIG. 4B, which illustrates a package structure 5b according to another embodiment of the present invention. In FIG. 4B, unlike the aforementioned FIG. 4A, the electronic component 120 is instead disposed under the package structure 5b, and the solder ball 130 is disposed on the other side, so as to increase the flexibility of the design.

In the above embodiment, although the wafer 40 is illustrated as being arranged at the same level, the present invention is not limited to this. According to the design requirements, the left and right wafers 40 in FIG. 4A or FIG. 4B can also be set at different levels to increase the degree of freedom in design.

In summary, the present invention provides a packaging structure having a first insulating layer, a third insulating layer, and a second insulating layer disposed between the first insulating layer and the third insulating layer. The thermal conductivity of the second insulating layer is less than the thermal conductivity of the first insulating layer and / or the third insulating layer, and the hardness of the second insulating layer is less than the hardness of the first insulating layer and / or the third insulating layer. With this arrangement, the heat generated by the components of the package structure during operation can be more efficiently conducted to prevent the package structure from overheating. In addition, it can also increase the overall structural strength and increase durability.

The foregoing outlines the features of many embodiments, so anyone with ordinary knowledge in the art can more fully understand the aspects of the present invention. Any person with ordinary knowledge in the technical field may design or modify other processes and structures based on the present invention without difficulty, so as to achieve the same purposes and / or obtain the same advantages as the embodiments of the present invention. Any person with ordinary knowledge in the technical field should also understand that different changes, substitutions, and modifications can be made without departing from the spirit and scope of the present invention. Such an equivalent creation does not exceed the spirit and scope of the present invention.

1a, 1b, 1c, 1d, 1e, 1f, 1g, 1h, 1i, 2a, 2b, 3a, 3b, 4, 5a, 5b

10, 10c, 10m, 10r, 10r’‧‧‧‧ first insulation layer

11‧‧‧Conducting Department

22‧‧‧Insulation Department

20‧‧‧Second insulation layer

30, 30c, 30m, 30r, 30r’‧‧‧‧ third insulation layer

40、41‧‧‧chip

50, 51, 52, 53, 53 ’, 54, 55, 56, 57, 58‧‧‧ wire layer

60, 61, 61 ’, 62, 63, 64, 65, 66, 67

70, 71‧‧‧ conductive pad

80, 81, 82, 83, 84 ‧‧‧ passivation layer

90m, 90c, 100, 110m, 110c ‧‧‧ insulation layer

120‧‧‧Electronic components

130‧‧‧solder ball

A, B, C ‧‧‧ thickness

E‧‧‧Elastic layer

H‧‧‧Isolation Department

R‧‧‧Region

The embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that, according to standard practices in the industry, various features are not drawn to scale and are for illustrative purposes only. In fact, it is possible to arbitrarily enlarge or reduce the size of the elements to clearly show the features of the present invention. FIG. 1A is a cross-sectional view of a package structure according to an embodiment. FIG. 1B is a cross-sectional view of a package structure according to an embodiment of the invention. FIG. 1C is a cross-sectional view of a package structure according to another embodiment of the invention. FIG. 1D is a cross-sectional view of a package structure according to another embodiment of the invention. FIG. 1E is a cross-sectional view of a package structure according to another embodiment of the invention. Figure 1F is an enlarged view of area R in Figure 1E. FIG. 1G is a cross-sectional view of a package structure according to another embodiment of the invention. FIG. 1H is a cross-sectional view of a package structure according to another embodiment of the invention. FIG. 1I is a cross-sectional view of a package structure according to another embodiment of the invention. FIG. 1J is a cross-sectional view of a package structure according to another embodiment of the invention. FIG. 2A is a cross-sectional view of a package structure according to another embodiment of the invention. FIG. 2B is a cross-sectional view of a package structure according to another embodiment of the invention. FIG. 3A is a cross-sectional view of a package structure according to another embodiment of the invention. FIG. 3B is a cross-sectional view of a package structure according to another embodiment of the invention. FIG. 4A is a cross-sectional view of a package structure according to another embodiment of the invention. FIG. 4B is a cross-sectional view of a package structure according to another embodiment of the invention.

Claims (18)

A packaging structure includes: a first insulating layer; a second insulating layer, disposed on the first insulating layer; a chip, disposed in the second insulating layer; a third insulating layer, disposed on the second On the insulating layer; wherein the thermal conductivity of the second insulating layer is less than the thermal conductivity of the first insulating layer, and the hardness of the second insulating layer is less than the hardness of the first insulating layer. The packaging structure as described in item 1 of the patent application scope, wherein the material of the first insulating layer includes a ceramic material, and the material of the second insulating layer includes a resin material. The packaging structure as described in item 2 of the patent application scope, wherein the material of the second insulating layer does not include glass fiber. The packaging structure as described in item 2 of the patent application range, wherein the thermal conductivity of the second insulating layer is less than the thermal conductivity of the third insulating layer, and the hardness of the second insulating layer is less than the hardness of the third insulating layer. The packaging structure as described in item 4 of the patent application scope, wherein the material of the third insulating layer includes a ceramic material. The packaging structure as described in item 4 of the patent application scope, wherein the third insulating layer includes a metal layer and an insulating film, and the insulating film is disposed on the metal layer. The packaging structure described in item 2 of the scope of the patent application further includes an elastic layer disposed on the first insulating layer. The packaging structure as described in item 7 of the patent application scope further includes an electronic component disposed on the first insulating layer. The packaging structure as described in item 2 of the patent application scope, wherein the thermal conductivity of the first insulating layer is less than the thermal conductivity of the third insulating layer, and the hardness of the first insulating layer is less than the hardness of the third insulating layer. The packaging structure as described in item 2 of the patent application scope, wherein the thickness of the ceramic material in the first insulating layer is greater than 50% of the thickness of the first insulating layer. The packaging structure as described in item 1 of the patent application scope, wherein the thickness of the second insulating layer is greater than the thickness of the first insulating layer and greater than the thickness of the third insulating layer. The packaging structure as recited in item 11 of the patent application range, wherein the thickness of the third insulating layer is greater than the thickness of the first insulating layer. The packaging structure as described in item 1 of the patent application scope, wherein the material of the first insulating layer includes a metal layer and a first insulating film, the material of the second insulating layer includes a resin material, and the first insulating film is Set on the metal layer. The packaging structure as described in item 13 of the patent application scope, wherein the material of the third insulating layer includes a ceramic material. The packaging structure as described in item 13 of the patent application scope, wherein the third insulating layer includes a metal layer and a second insulating film. The packaging structure as recited in item 13 of the patent application range, wherein the metal layer includes a conductive portion and an insulating portion, and the conductive portion is electrically isolated from the insulating portion. The packaging structure as described in item 1 of the patent application scope, wherein the first insulating layer and the second insulating layer do not overlap when viewed from the direction parallel to the interface between the first insulating layer and the second insulating layer, and the second The insulating layer does not overlap with the third insulating layer. The packaging structure as described in item 1 of the patent application scope further includes a first wire layer, a second wire layer, and a plurality of via holes, wherein the first wire layer is disposed on the first insulating layer and the second Between the insulation layers, the second wire layer is disposed between the second insulation layer and the third insulation layer, and the via holes are electrically connected to the chip, the first wire layer, and the second wire layer.