TWI786182B - Thermal-dissipating substrate structure - Google Patents

Abstract

A substrate structure is provided, including a substrate, an integrated circuit chip, a circuit structure, and a thermal-dissipating structure. The integrated circuit chip is disposed in the substrate. The circuit structure is electrically connected to the integrated circuit chip. The thermal-dissipating structure is disposed in the substrate and adjacent to the integrated circuit chip, and the thermal-dissipating structure is electrically isolated from the circuit structure.

Description

Substrate structure

The invention relates to a substrate structure. More particularly, the present invention relates to a substrate structure having a heat dissipation structure adjacent to an integrated circuit die.

With the development of science and technology, the use of electronic products is becoming more and more common nowadays, especially mobile phones have gradually become the focus of modern people's life. In recent years, fast charging technology has become the research and development target of major mobile phone manufacturers. At present, this technology has been introduced into mobile phone applications. However, limited by the size of the internal substrate of the mobile phone, the battery capacity has not been able to be increased without affecting the functions of the mobile phone.

In addition, when in use, the fast charging module or power management module of the mobile phone will pass a larger current than other parts, and in the case of flowing a large current, regardless of the integrated circuit (integrated circuit; IC) chip Both itself and the surrounding passive components are heat sources, so mobile phones often generate heat when charging or energy-consuming operations.

In order to solve the above known problems, the present invention provides a substrate structure, which includes a substrate, an integrated circuit chip, a circuit structure and a heat dissipation structure. The integrated circuit chip is disposed in the substrate. The circuit structure is electrically connected to the integrated circuit chip. The heat dissipation structure is disposed in the substrate, adjacent to the integrated circuit chip, and the heat dissipation structure is electrically independent from the circuit structure.

In one embodiment, the integrated circuit chip further has a first surface, a second surface, and at least one contact, wherein the second surface is opposite to the first surface, the contact is located on the first surface, and the circuit structure and The aforementioned contacts are connected, and the second surface faces the heat dissipation structure. Viewed from a direction perpendicular to the first surface, the integrated circuit chip and the heat dissipation structure at least partially overlap. The substrate structure further includes a first insulating layer and a second insulating layer, wherein the substrate is located between the first insulating layer and the second insulating layer, the second surface faces the second insulating layer, and the heat dissipation structure penetrates the second insulating layer. The heat dissipation structure further includes a plurality of heat conducting components. The aforementioned contacts include a power contact and a signal contact, and the density of the heat dissipation structure adjacent to the power contact is greater than that of the heat dissipation structure adjacent to the signal contact.

In one embodiment, the heat dissipation structure further includes a heat conduction member and a heat dissipation element, and the heat dissipation element has a plurality of protrusions on the surface. The substrate structure further includes another heat dissipation structure, wherein the first surface faces the other heat dissipation structure. The substrate structure further includes a metal heat conduction plate, and the metal heat conduction plate is disposed in the substrate and located between the second surface and the heat dissipation structure.

In one embodiment, the substrate structure further includes a third insulating layer and a metal heat conducting plate, wherein the third insulating layer is located between the second insulating layer and the metal heat conducting plate, and the metal heat conducting plate simultaneously contacts the third insulating layer and dissipates heat. structure. The substrate structure further includes a passive element and an insulating material layer, wherein the passive element is disposed on the first insulating layer, and the insulating material layer covers the passive element. A groove is formed in the second insulating layer and the substrate, and the heat dissipation structure is arranged in the groove.

In one embodiment, the substrate structure further includes a metal heat conduction plate disposed on the substrate, wherein the metal heat conduction plate simultaneously contacts the substrate and the heat dissipation structure. The substrate structure further includes a heat dissipation element, wherein the metal heat conducting plate is located between the heat dissipation structure and the heat dissipation element. The heat dissipation structure has a first section and a second section, the first section is located between the integrated circuit chip and the second section, and the area of the first section is smaller than the area of the second section. Part of the substrate is sandwiched between the heat dissipation structure and the integrated circuit chip.

1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H, 1I, 1J‧‧‧substrate structure

10‧‧‧substrate

11‧‧‧upper part

12‧‧‧lower part

20‧‧‧Integrated Circuit Chips

201‧‧‧First surface

202‧‧‧Second surface

203‧‧‧Contact

203P‧‧‧power contact

203S‧‧‧signal contact

30‧‧‧circuit structure

40‧‧‧First insulating layer

50‧‧‧Second insulating layer

52‧‧‧The third insulating layer

60A, 60B, 60C, 60D, 60E, 60F, 60G, 60H, 60I, 60J‧‧‧heat dissipation structure

61, 61’, 61”, 64‧‧‧heat conducting member

611‧‧‧first section

612‧‧‧Second section

62‧‧‧thermally conductive material layer

63, 63’‧‧‧radiating parts

631, 631’‧‧‧bulge

70A, 70B‧‧‧passive components

80‧‧‧Insulation layer

90, 90’, 90”‧‧‧Metal heat conduction plate

G‧‧‧Gap

Wi‧‧‧thickness of the third insulating layer

Wm‧‧‧thickness of metal heat conduction plate

FIG. 1 shows a schematic cross-sectional view of a substrate structure according to an embodiment of the present invention.

FIG. 2 shows a schematic cross-sectional view of a substrate structure according to another embodiment of the present invention.

FIG. 3 shows a schematic cross-sectional view of a substrate structure according to another embodiment of the present invention.

FIG. 4 shows a schematic cross-sectional view of a substrate structure according to another embodiment of the present invention.

FIG. 5 shows a schematic cross-sectional view of a substrate structure according to another embodiment of the present invention.

FIG. 6 shows a schematic cross-sectional view of a substrate structure according to another embodiment of the present invention.

FIG. 7 shows a schematic cross-sectional view of a substrate structure according to another embodiment of the present invention.

FIG. 8 shows a schematic cross-sectional view of a substrate structure according to another embodiment of the present invention.

FIG. 9 shows a schematic cross-sectional view of a substrate structure according to another embodiment of the present invention.

FIG. 10 shows a schematic cross-sectional view of a substrate structure according to another embodiment of the present invention.

The substrate structure of the embodiment of the present invention is described below. It should be readily appreciated, however, that embodiments of the present invention provide many suitable creative concepts that can be implemented in a wide variety of specific contexts. The specific embodiments disclosed are merely illustrative of specific ways to use the invention and do not limit the scope of the invention.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the related art and the present disclosure, and not in an idealized or overly formal manner Interpretation, unless specifically defined herein.

Please refer to FIG. 1 first. FIG. 1 shows a schematic cross-sectional view of a substrate structure 1A according to an embodiment of the present invention. In this embodiment, the substrate structure 1A mainly includes a substrate 10 , an integrated circuit chip 20 , a circuit structure 30 , a first insulating layer 40 , a second insulating layer 50 , and a heat dissipation structure 60A. The integrated circuit chip 20 is disposed in the substrate 10 , wherein the substrate 10 includes an upper portion 11 and a lower portion 12 . For example, the integrated circuit chip 20 is arranged on the lower part 12, and then the upper part 11 is arranged on the integrated circuit chip 20, and finally the upper part 11 and the lower part 12 are combined by pressing and heating, so that the integrated circuit chip 20 disposed in the substrate 10 . In the following embodiments, the upper part 11 and the lower part 12 are collectively shown as the substrate 10 . The integrated circuit chip 20 has a first surface 201, a second surface 202 and at least one contact 203, wherein the second surface 202 is opposite to the first surface 201 (that is, the first surface 201 and the second surface 202 are respectively located opposite sides of the integrated circuit chip 20 ), and the contacts 203 are located on the first surface 201 . The circuit structure 30 is electrically connected to the contact 203 of the IC chip 20 . A first insulating layer 40 and a second insulating layer 50 are respectively arranged on the upper and lower sides of the substrate 10, that is, the substrate 10 is located between the first insulating layer 40 and the second insulating layer 50, wherein the first surface 201 faces the first The insulating layer 40 , and the second surface 202 faces the second insulating layer 50 . It should be understood that the material of the substrate 10 may be a material with relatively low hardness, so as to protect the integrated circuit chip 20 disposed in the substrate 10 . For example, the hardness of the material of the substrate 10 may be lower than the hardness of the material of the first insulating layer 40 and/or the second insulating layer 50 .

Although only a single integrated circuit chip 20 is shown in the embodiment of the present invention, in some other embodiments, a plurality of integrated circuit chips 20 may be disposed in the substrate 10, and the aforementioned plurality of integrated circuit chips 20 can be arranged in the vertical direction (Y-axis direction) or horizontal direction (X-axis direction). In addition, in some other embodiments, a plurality of integrated circuit chips 20 may also be disposed in the substrate 10 in an irregular manner.

The heat dissipation structure 60A is disposed in the substrate 10 and penetrates the second insulating layer 50 , wherein the second surface 202 of the integrated circuit chip 20 faces the heat dissipation structure 60A. In this embodiment, the heat dissipation structure 60A includes a plurality of heat conducting members 61 adjacent to the integrated circuit chip 20 . For example, as shown in FIG. 1, firstly, after laser drilling is performed on the substrate 10 toward the second surface 202, metal materials (such as copper and other materials with high thermal conductivity) are filled, and then the second insulating The layer 50 is laser drilled and filled with metal material to form the heat conducting member 61 . The diameter of the hole formed by laser drilling will gradually increase outwards. In other words, the heat conduction member 61 of the heat dissipation structure 60A has a first cross section 611 parallel to the X-axis direction at its top (ie, the top of the heat conduction member 61 ). surface), and at the junction of the substrate 10 and the second insulating layer 50, there is a second section 612 parallel to the X-axis direction (as shown by the dotted line in FIG. 1 ), wherein the first section 611 is located on the integrated circuit chip 20 and the second section 612 (that is, the first section 611 is closer to the integrated circuit chip 20 than the second section 612 ), and the area of the first section 611 is smaller than the area of the second section 612 .

During the above-mentioned laser drilling process, if the hole is too close to the integrated circuit chip 20 , or even exposes the integrated circuit chip 20 , it may cause damage to the integrated circuit chip 20 . Therefore, in some embodiments, there is usually a part of the substrate 10 between the heat dissipation structure 60A and the integrated circuit chip 20 filled in the hole (that is, there is a gap G between the heat dissipation structure 60A and the integrated circuit chip 20 ). To avoid damage to the integrated circuit chip 20 . Of course, in some other embodiments, the heat dissipation structure 60A can also directly contact the integrated circuit chip 20 , which helps to improve the heat dissipation effect of the heat dissipation structure 60A. The heat dissipation structure 60A and the circuit structure 30 are basically electrically independent from each other (the heat dissipation structure 60A and the circuit structure 30 are not electrically connected except for grounding). In addition, viewed from a direction (Y-axis direction) perpendicular to the first surface 201 , the integrated circuit chip 20 and the heat dissipation structure 60A at least partially overlap.

In addition, the heat dissipation structure 60A may optionally include a thermally conductive material layer 62 , wherein the thermally conductive material layer 62 is disposed on the exposed surface of the thermally conductive member 61 . In other words, the heat conducting member 61 is located between the heat conducting material layer 62 and the integrated circuit chip 20 . In addition, according to design requirements, the surface of the thermally conductive material layer 62 can be subjected to various treatments (for example: surface roughening, setting of bosses, setting of depressions, or setting of metal substrates, etc.), so as to increase the contact area between the heat dissipation structure 60A and the outside world. , thereby improving the cooling efficiency.

In addition, passive elements 70A, 70B (eg resistors, capacitors, inductors, etc.) The insulating layer 40 is electrically connected to the integrated circuit chip 20 through the circuit structure 30 , and the insulating material layer 80 is formed on the first insulating layer 40 by in-molding, and covers the passive elements 70A, 70B. The insulating material layer 80 is, for example, a material with higher thermal conductivity than air such as resin (epoxy), and the thermal conductivity of the insulating material layer 80 may be higher than that of other insulating layers (such as the first insulating layer 40 and the second insulating layer 50 mentioned above). , so that the heat dissipation efficiency of the substrate structure 1A can be further improved.

It should be understood that, compared with the semiconductor packaging structure in which the integrated circuit chip is arranged on the surface of the substrate currently on the market, the substrate structure in which the integrated circuit chip 20 is arranged in the substrate 10 described in the above embodiment can make the overall package structure The size of the substrate is reduced by more than 40%, and the space saved on the surface of the substrate structure can be used to arrange other electronic components. At the same time, since the integrated circuit chip 20 is arranged in the substrate 10, the circuit connected to the integrated circuit chip 20 is also covered in the substrate 10, so the circuit is less likely to be damaged, thereby avoiding failures. The thermal conductivity of the substrate 10 of the IC chip 20 is greater than that of air, so the above substrate structure also has the effect of enhancing heat dissipation.

Next, please refer to FIG. 2 , which shows a schematic cross-sectional view of a substrate structure 1B according to another embodiment of the present invention. It should be noted that the substrate structure 1B may include the same or similar components as the substrate structure 1A, and the same or similar components will be denoted by the same or similar reference numerals below and will not be described in detail. The main difference between the substrate structure 1B and the substrate structure 1A is that, as shown in FIG. The surface at the junction of the two insulating layers 50 is designed to be inclined relative to the horizontal direction (X-axis direction) (that is, there is an angle between the above-mentioned surface of the heat-conducting member 61' and the horizontal direction), so as to increase the surface area of the heat-conducting member 61', Improve heat dissipation efficiency. In addition, the heat conducting member 61 ″ is formed in the hole formed by a single laser drilling process on the substrate 10 and the second insulating layer 50 , thereby simplifying the related process and saving costs. It should be understood that although FIG. 2 shows different shapes of heat-conducting members, the substrate structure 1B may only have a single type of heat-conducting member (such as one of the heat-conducting members 61 ′, 61 ″), or a combination of the aforementioned heat-conducting members.

It should be noted that although the thermally conductive material layer 62 is not shown in the heat dissipation structure 60B in FIG. The heat conduction members 61 ′, 61 ″ are located between the heat conduction material layer 62 and the integrated circuit chip 20 , thereby further improving the heat dissipation effect.

FIG. 3 shows a schematic cross-sectional view of a substrate structure 1C according to another embodiment of the present invention. It should be noted that the substrate structure 1C may include the same or similar components as the substrate structure 1A, and the same or similar components will be denoted by the same or similar reference numerals below and will not be described in detail. The main difference between the substrate structure 1C and the substrate structure 1A is that the heat dissipation structure 60C of the substrate structure 1C further includes a heat dissipation element 63, wherein the heat dissipation element 63 is located below the aforementioned heat conduction member 61 (that is, on the exposed surface of the heat conduction member 61) . In other words, the heat conducting member 61 is located between the substrate 10 and the heat sink 63 . For example, the heat sink 63 can be silver (Ag), carbon nanotube (carbon nanotube; CNT), graphene (graphene) and other materials with high thermal conductivity (that is, materials with thermal conductivity greater than air), or the aforementioned combination of materials. In addition, the heat sink 63 has a plurality of protrusions 631 on the lower surface thereof (ie, the surface opposite to the heat conducting member 61 ). The arrangement of the protruding portion 631 helps to increase the surface area of the heat sink 63 exposed to the outside, which can further improve the heat dissipation effect.

It should be understood that the above-mentioned thermally conductive material layer 62 and the heat dissipation element 63 are both disposed on the exposed surface of the thermally conductive member 61, 61' or 61", and both have the function of improving the heat dissipation effect. Generally speaking, heat conduction The space that material layer 62 occupies is less, is suitable for the design that space requirement is arranged; And the setting of radiator 63 is comparatively easy, can simplify manufacturing process and provide larger heat dissipation surface area.In the manufacture of various substrate structures described in the present invention In the process, the heat conducting material layer 62 or the heat dissipation element 63 can be selected and provided according to actual needs. In other words, although only the heat conduction material layer 62 or the heat dissipation element 63 may be shown in all embodiments of the present invention, or the aforementioned Both, but the above embodiment should be understood as including one of the thermally conductive material layer 62 or the heat sink 63. The selection or replacement of the thermally conductive material layer 62 and the heat sink 63 will not be repeated below.

FIG. 4 shows a schematic cross-sectional view of a substrate structure 1D according to another embodiment of the present invention. It should be noted that the substrate structure 1D may include the same or similar components as the substrate structure 1A, and the same or similar components will be denoted by the same or similar reference numerals and will not be described in detail. The main difference between the substrate structure 1D and the substrate structure 1A is that: the heat dissipation structure 60D further includes at least one heat conducting member 61A disposed on the first surface 201 of the integrated circuit chip 20 . In other words, the first surface 201 faces the aforementioned heat conduction member 61A. Since the heat conduction members 61 and 61A are provided on the first surface 201 and the second surface 202 of the integrated circuit chip 20 , the heat dissipation can be further enhanced. In some embodiments, in addition to being disposed on the upper and lower sides of the integrated circuit chip 20 , the heat conducting members 61 , 61A may also be disposed around the integrated circuit chip 20 .

FIG. 5 shows a schematic cross-sectional view of a substrate structure 1E according to another embodiment of the present invention. It should be noted that the substrate structure 1E may include the same or similar components as the substrate structure 1A, and the same or similar components will be denoted by the same or similar reference numerals and will not be described in detail. The main difference between the substrate structure 1E and the substrate structure 1A is that: the contact 203 of the integrated circuit chip 20 includes a power contact 203P and a signal contact 203S. In this embodiment, the substrate structure 1E further has a redistribution layer (not shown), which is used to centrally connect the power supply lines to the power contacts 203P of the integrated circuit chip 20, while the signal contacts 203S are used for transmission signal. Since the power contact 203P is electrically connected to the power source, compared with the signal contact 203S, the power contact 203P will pass a larger current. Therefore, heat sources are more likely to be generated around the power contact 203P. In order to enhance the heat dissipation in the area around the power contact 203P, as shown in FIG. 5 , the density of the heat conducting members 61 adjacent to the power contact 203P is increased. In other words, the closeness of the heat conduction member 61 to the power contact 203P is greater than the closeness of the heat conduction member 61 to the signal contact 203S. By concentrating the heat conducting member 61 on a specific area, the heat dissipation efficiency of the aforementioned area can be locally improved.

FIG. 6 shows a schematic cross-sectional view of a substrate structure 1F according to another embodiment of the present invention. It should be noted that the substrate structure 1F may include the same or similar components as the substrate structure 1A, and the same or similar components will be denoted by the same or similar reference numerals below, and will not be described in detail. The main differences between the substrate structure 1F and the substrate structure 1A are: a groove 51 is formed in the second insulating layer 50 and the substrate 10 , and the heat dissipation structure 60F includes a heat conducting member 64 . The heat conducting member 64 is disposed in the groove 51 , wherein the heat conducting member 64 is formed in the groove 51 by electroplating. Compared with the aforementioned heat dissipation structure with multiple heat conduction members 61, 61' or 61", the integrated heat dissipation structure 60F can further improve heat conduction efficiency.

FIG. 7 shows a schematic cross-sectional view of a substrate structure 1G according to another embodiment of the present invention. It should be noted that the substrate structure 1G may include the same or similar components as the substrate structure 1F, and the same or similar components will be denoted by the same or similar reference numerals below and will not be described in detail. The main difference between the substrate structure 1G and the substrate structure 1F is that: the heat dissipation element 63' is disposed in the groove 51, and a plurality of heat dissipation elements 63' can be formed on the surface below the heat dissipation element 63' (opposite to the surface facing the heat conducting member 61). The protruding portion 631' can increase the surface area of the heat sink 63' facing the outside, so as to further improve the heat dissipation effect.

FIG. 8 shows a schematic cross-sectional view of a substrate structure 1H according to another embodiment of the present invention. It should be noted that the substrate structure 1H may include the same or similar components as the substrate structure 1A, and the same or similar components will be denoted by the same or similar reference numerals and will not be described in detail. The main difference between the substrate structure 1H and the substrate structure 1A is that: the heat dissipation structure 60H of the substrate structure 1H further includes a metal heat conducting plate 90 disposed in the substrate 10, the metal heat conducting plate 90 has a plane facing the second surface 202, and The metal heat conducting plate 90 is located between the second surface 202 and the heat conducting member 61 . In some embodiments, the thermally conductive member 61 may directly contact the metal thermally conductive plate 90 . The metal heat conduction plate 90 can absorb the heat emitted by the integrated circuit chip 20 , and conduct the heat to the outside through the heat conduction member 61 . Therefore, the arrangement of the metal heat conducting plate 90 helps to dissipate heat more evenly and quickly.

FIG. 9 shows a schematic cross-sectional view of a substrate structure 1I according to another embodiment of the present invention. It should be noted that the substrate structure 1I may include the same or similar components as the substrate structure 1A, and the same or similar components will be denoted by the same or similar reference numerals and will not be described in detail. The main difference between the substrate structure 1I and the substrate structure 1A is that the heat dissipation structure 60I of the substrate structure 1I further includes a metal heat conduction plate 90' disposed on the substrate 10, wherein the metal heat conduction plate 90' contacts the substrate 10 and the heat dissipation structure 60I at the same time. In this embodiment, the aforementioned second insulating layer 50 is replaced by a metal heat conducting plate 90'. The metal heat conducting plate 90' not only has the function of dissipating heat, but also enhances the strength of the substrate structure 1I. In addition, the heat sink 63 can also be selectively disposed under the metal heat conducting plate 90'. In other words, the metal heat conducting plate 90' is located between the heat dissipation structure 60I and the heat dissipation element 63.

It should be noted that the substrate structure 1I further includes an insulating layer 54 for electrically insulating the circuit structure 30 from the metal heat conducting plate 90', so as to prevent the circuit structure 30 from being electrically connected to the heat dissipation structure 60I. The insulating layer 54 may contain air or any suitable insulating dielectric.

Although the passive elements 70A, 70B and the insulating material layer 80 are not shown in Figs. Layer 80. In addition, even if no passive element is disposed on the aforementioned substrate structure (for example, on the first insulating layer 40), the insulating material layer 80 can still be disposed on the first insulating layer 40 in any suitable manner (such as in-molding, etc.), because The thermal conductivity of the insulating material layer 80 is much greater than that of air, so disposing the insulating material layer 80 can help to improve the heat dissipation effect.

FIG. 10 shows a schematic cross-sectional view of a substrate structure 1J according to another embodiment of the present invention. It should be noted that the substrate structure 1J may include the same or similar components as the substrate structure 1A, and the same or similar components will be denoted by the same or similar reference numerals and will not be described in detail. The main difference between the substrate structure 1J and the substrate structure 1A is that the substrate structure 1J further includes a third insulating layer 52 and a metal heat conducting plate 90", both of which are arranged under the second insulating layer 50, wherein the third insulating layer 52 is located on the second Between the insulating layer 50 and the metal heat conducting plate 90", and the metal heat conducting plate 90" contacts the third insulating layer 52 and the heat dissipation structure 60J at the same time. In addition, the passive components 70A, 70B can also be arranged on the metal heat conducting plate 90", thereby Contributes to the heat dissipation effect of the passive elements 70A, 70B. It should be noted that the circuit structure 30 and the passive components 70A, 70B must be electrically insulated from the metal heat conducting plate 90 ″.

In this embodiment, the third insulating layer 52 has a thickness Wi in the direction perpendicular to the first surface 201 (Y-axis direction), and the metal heat conducting plate 90″ has another thickness Wm in the same direction, and the metal heat conducting plate The thickness Wm of 90″ is greater than the thickness Wi of the third insulating layer 52 . In this way, the mechanical strength and flatness of the substrate structure 1J can be improved.

To sum up, the present invention provides a substrate structure with a heat dissipation structure adjacent to an integrated circuit chip. The arrangement of the heat dissipation structure can help to improve the heat dissipation effect of electronic components such as integrated circuit chips in the substrate structure. It should be understood that the various heat dissipation structures described in the present invention can be replaced, adjusted or combined according to actual needs, and are not limited to the structures described in a single embodiment.

Although the embodiments of the present invention and their advantages have been disclosed above, it should be understood that those skilled in the art can make changes, substitutions and modifications without departing from the spirit and scope of the present invention. In addition, the protection scope of the present invention is not limited to the process, machine, manufacture, material composition, device, method and steps in the specific embodiments described in the description, and anyone with ordinary knowledge in the technical field can learn from the disclosure of the present invention It is understood that the current or future developed processes, machines, manufactures, material compositions, devices, methods and steps can be used in accordance with the present invention as long as they can perform substantially the same functions or obtain substantially the same results in the embodiments described herein. Therefore, the protection scope of the present invention includes the above-mentioned process, machine, manufacture, composition of matter, device, method and steps. In addition, each patent application scope constitutes an individual embodiment, and the protection scope of the present invention also includes the combination of each patent application scope and the embodiments.

Although the present invention is disclosed above with the aforementioned several preferred embodiments, they are not intended to limit the present invention. Those with ordinary knowledge in the technical field of the present invention can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the scope of the appended patent application. In addition, each claimed claim constitutes an independent embodiment, and combinations of various claimed claims and embodiments fall within the scope of the present invention.

1A‧‧‧substrate structure

10‧‧‧substrate

11‧‧‧upper part

12‧‧‧lower part

20‧‧‧Integrated Circuit Chips

201‧‧‧First surface

202‧‧‧Second surface

203‧‧‧Contact

30‧‧‧circuit structure

40‧‧‧First insulating layer

50‧‧‧Second insulating layer

60A‧‧‧Heat Dissipation Structure

61‧‧‧Heat-conducting components

611‧‧‧first section

612‧‧‧Second section

62‧‧‧thermally conductive material layer

70A, 70B‧‧‧passive components

80‧‧‧Insulation layer

G‧‧‧Gap

Claims (13)

A substrate structure, comprising: a substrate; an integrated circuit chip disposed in the substrate, wherein the integrated circuit chip has a first surface and a second surface opposite to the first surface; a first insulating layer ; a second insulating layer, wherein the substrate is located between the first insulating layer and the second insulating layer, and the second surface faces the second insulating layer; a circuit structure electrically connected to the integrated circuit chip and a heat dissipation structure disposed in the substrate, adjacent to the integrated circuit chip, and the heat dissipation structure is electrically independent from the circuit structure, wherein the heat dissipation structure includes a plurality of heat conduction members penetrating through the second insulating layer, and consists of Viewed from a direction perpendicular to the first surface, the integrated circuit chip at least partially overlaps with the heat conducting members. The substrate structure as described in claim 1, wherein the integrated circuit chip further has at least one contact, the at least one contact is located on the first surface, and the circuit structure is connected to the at least one contact, The second surface faces the heat dissipation structure. The substrate structure as described in item 2 of the scope of the patent application, wherein the at least one contact includes a power contact and a signal contact, and the density of the heat conducting members adjacent to the power contact is greater than that of the heat conducting members adjacent to the power contact The density of signal contacts. The substrate structure as described in item 2 of the scope of the patent application, wherein the heat dissipation structure further includes a heat dissipation element, and the heat dissipation element has a plurality of protrusions. The substrate structure described in item 2 of the scope of the patent application further includes another heat dissipation structure, wherein the first surface faces the other heat dissipation structure. The substrate structure described in item 2 of the scope of the patent application further includes a metal heat conduction plate disposed in the substrate, and the metal heat conduction plate is located between the second surface and the heat dissipation structure. The substrate structure described in item 2 of the scope of the patent application further includes a third insulating layer and a metal heat conducting plate, wherein the third insulating layer is located between the second insulating layer and the metal heat conducting plate, and the metal conducts heat The board is in contact with the third insulating layer and the heat dissipation structure at the same time. The substrate structure described in item 2 of the scope of the patent application further includes a passive element and an insulating material layer, wherein the passive element is disposed on the first insulating layer, and the insulating material layer covers the passive element. The substrate structure described in item 2 of the scope of the patent application, wherein a groove is formed in the second insulating layer and the substrate, and the heat dissipation structure is arranged in the groove. The substrate structure described in item 1 of the scope of the patent application further includes a metal heat conduction plate disposed on the substrate, wherein the metal heat conduction plate is in contact with the substrate and the heat dissipation structure at the same time. The substrate structure as described in item 10 of the scope of the patent application further includes a heat dissipation element, wherein the metal heat conducting plate is located between the heat dissipation structure and the heat dissipation element. The substrate structure as described in item 1 of the scope of the patent application, wherein the heat dissipation structure has a first cross section and a second cross section, the first cross section is located between the integrated circuit chip and the second cross section, and the first cross section cross-sectional area smaller than the area of the second section. The substrate structure described in item 1 of the scope of the patent application, wherein a part of the substrate is interposed between the heat dissipation structure and the integrated circuit chip.

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