JP2007201240A5 - - Google Patents

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Publication number
JP2007201240A5
JP2007201240A5 JP2006018915A JP2006018915A JP2007201240A5 JP 2007201240 A5 JP2007201240 A5 JP 2007201240A5 JP 2006018915 A JP2006018915 A JP 2006018915A JP 2006018915 A JP2006018915 A JP 2006018915A JP 2007201240 A5 JP2007201240 A5 JP 2007201240A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2006018915A
Other versions
JP2007201240A (ja
JP5005224B2 (ja
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Application filed filed Critical
Priority to JP2006018915A priority Critical patent/JP5005224B2/ja
Priority claimed from JP2006018915A external-priority patent/JP5005224B2/ja
Priority to US11/627,167 priority patent/US8350331B2/en
Publication of JP2007201240A publication Critical patent/JP2007201240A/ja
Publication of JP2007201240A5 publication Critical patent/JP2007201240A5/ja
Application granted granted Critical
Publication of JP5005224B2 publication Critical patent/JP5005224B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006018915A 2006-01-27 2006-01-27 半導体装置及びその製造方法 Expired - Fee Related JP5005224B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006018915A JP5005224B2 (ja) 2006-01-27 2006-01-27 半導体装置及びその製造方法
US11/627,167 US8350331B2 (en) 2006-01-27 2007-01-25 Semiconductor device and manufacturing method for the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006018915A JP5005224B2 (ja) 2006-01-27 2006-01-27 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2007201240A JP2007201240A (ja) 2007-08-09
JP2007201240A5 true JP2007201240A5 (ja) 2009-02-26
JP5005224B2 JP5005224B2 (ja) 2012-08-22

Family

ID=38321212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006018915A Expired - Fee Related JP5005224B2 (ja) 2006-01-27 2006-01-27 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US8350331B2 (ja)
JP (1) JP5005224B2 (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4551429B2 (ja) 2006-09-29 2010-09-29 株式会社神戸製鋼所 燃料電池用セパレータの製造方法、燃料電池用セパレータおよび燃料電池
KR20090008568A (ko) * 2007-07-18 2009-01-22 주식회사 동부하이텍 반도체 소자의 제조방법
US8106459B2 (en) 2008-05-06 2012-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs having dielectric punch-through stoppers
US8012814B2 (en) * 2008-08-08 2011-09-06 International Business Machines Corporation Method of forming a high performance fet and a high voltage fet on a SOI substrate
US8120110B2 (en) * 2008-08-08 2012-02-21 International Business Machines Corporation Semiconductor structure including a high performance FET and a high voltage FET on a SOI substrate
KR101442177B1 (ko) * 2008-12-18 2014-09-18 삼성전자주식회사 커패시터 없는 1-트랜지스터 메모리 셀을 갖는 반도체소자의 제조방법들
US8293616B2 (en) * 2009-02-24 2012-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of fabrication of semiconductor devices with low capacitance
JP5465907B2 (ja) * 2009-03-27 2014-04-09 ラピスセミコンダクタ株式会社 半導体装置
JP4970507B2 (ja) 2009-08-27 2012-07-11 株式会社東芝 半導体記憶装置
US8680617B2 (en) * 2009-10-06 2014-03-25 International Business Machines Corporation Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS
US8426278B2 (en) * 2010-06-09 2013-04-23 GlobalFoundries, Inc. Semiconductor devices having stressor regions and related fabrication methods
JP5635680B2 (ja) 2011-03-29 2014-12-03 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US8546208B2 (en) * 2011-08-19 2013-10-01 International Business Machines Corporation Isolation region fabrication for replacement gate processing
JP5837387B2 (ja) * 2011-10-11 2015-12-24 ルネサスエレクトロニクス株式会社 半導体集積回路装置および半導体集積回路装置の製造方法
CN103811322B (zh) * 2012-11-13 2016-03-16 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US9412736B2 (en) 2014-06-05 2016-08-09 Globalfoundries Inc. Embedding semiconductor devices in silicon-on-insulator wafers connected using through silicon vias
US9543153B2 (en) * 2014-07-16 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Recess technique to embed flash memory in SOI technology
US9634020B1 (en) * 2015-10-07 2017-04-25 Silicon Storage Technology, Inc. Method of making embedded memory device with silicon-on-insulator substrate
US10504912B2 (en) * 2017-07-28 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology
US11348944B2 (en) * 2020-04-17 2022-05-31 Taiwan Semiconductor Manufacturing Company Limited Semiconductor wafer with devices having different top layer thicknesses
US11398403B2 (en) * 2020-05-28 2022-07-26 Taiwan Semiconductor Manufacturing Company Limited Multiple thickness semiconductor-on-insulator field effect transistors and methods of forming the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4823408B2 (ja) * 2000-06-08 2011-11-24 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP2003243662A (ja) * 2002-02-14 2003-08-29 Mitsubishi Electric Corp 半導体装置およびその製造方法、半導体ウェハ
JP2004241755A (ja) * 2003-01-15 2004-08-26 Renesas Technology Corp 半導体装置
JP4050663B2 (ja) * 2003-06-23 2008-02-20 株式会社東芝 半導体装置およびその製造方法
JP4346433B2 (ja) * 2003-12-24 2009-10-21 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
JP4700295B2 (ja) * 2004-06-08 2011-06-15 富士通セミコンダクター株式会社 半導体装置とその製造方法
US7247547B2 (en) * 2005-01-05 2007-07-24 International Business Machines Corporation Method of fabricating a field effect transistor having improved junctions
US7491615B2 (en) * 2005-09-23 2009-02-17 United Microelectronics Corp. Method of fabricating strained-silicon transistors and strained-silicon CMOS transistors
US7326601B2 (en) * 2005-09-26 2008-02-05 Advanced Micro Devices, Inc. Methods for fabrication of a stressed MOS device
US7582947B2 (en) * 2005-10-05 2009-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. High performance device design

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