JP2007173267A - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP2007173267A JP2007173267A JP2005364345A JP2005364345A JP2007173267A JP 2007173267 A JP2007173267 A JP 2007173267A JP 2005364345 A JP2005364345 A JP 2005364345A JP 2005364345 A JP2005364345 A JP 2005364345A JP 2007173267 A JP2007173267 A JP 2007173267A
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- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 238000006243 chemical reaction Methods 0.000 claims abstract description 27
- 239000002344 surface layer Substances 0.000 claims abstract description 7
- 238000003384 imaging method Methods 0.000 claims description 76
- 239000010410 layer Substances 0.000 claims description 34
- 238000009792 diffusion process Methods 0.000 claims description 33
- 239000012535 impurity Substances 0.000 claims description 33
- 230000005669 field effect Effects 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 abstract description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 11
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000002184 metal Substances 0.000 description 5
- 238000002955 isolation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Abstract
【解決手段】固体撮像装置1は、半導体基板10と受光部20とを備えている。受光部20は、半導体基板10の表面S1(第1面)側の表層に設けられている。この受光部20の表面20aは、シリサイド化されている。固体撮像装置1は、半導体基板10の裏面S2(第2面)に入射した被撮像体からの光を半導体基板10の内部で光電変換し、その光電変換により発生した電荷を受光部20で受けて上記被撮像体を撮像するものである。
【選択図】図1
Description
2 固体撮像装置
10 半導体基板
12 P型ウエル領域
20 受光部
32 ゲート絶縁膜
34 ゲート電極
36 N型不純物拡散層
38 N型不純物拡散層
40 ソースフォロアアンプ
42 選択スイッチ用FET
44 検出用FET
46 負荷用FET
48 出力端子
52 素子分離領域
54 配線
Claims (8)
- 半導体基板と、
前記半導体基板の第1面側の表層に設けられ、表面がシリサイド化された受光部と、を備え、
前記半導体基板の第2面に入射した被撮像体からの光を当該半導体基板の内部で光電変換し、当該光電変換により発生した電荷を前記受光部で受けて前記被撮像体を撮像することを特徴とする固体撮像装置。 - 請求項1に記載の固体撮像装置において、
前記受光部の表面全体がシリサイド化されている固体撮像装置。 - 請求項1または2に記載の固体撮像装置において、
前記受光部は、隣接する前記半導体基板との間でPN接合を形成する第1の不純物拡散層である固体撮像装置。 - 請求項1乃至3いずれかに記載の固体撮像装置において、
前記半導体基板の前記第1面上に、前記受光部と隣接して設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極と、
前記ゲート絶縁膜および前記ゲート電極を挟んで、前記受光部の反対側に設けられた第2の不純物拡散層と、を備え、
前記受光部、前記ゲート絶縁膜、前記ゲート電極および前記第2の不純物拡散層は、電界効果トランジスタを構成している固体撮像装置。 - 請求項4に記載の固体撮像装置において、
前記第2の不純物拡散層の表面がシリサイド化されている固体撮像装置。 - 請求項1乃至3いずれかに記載の固体撮像装置において、
前記半導体基板の前記第1面側の前記表層に、前記受光部と隣接して設けられた第2の不純物拡散層と、
前記半導体基板の前記第1面上に、前記第2の不純物拡散層と隣接して設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極と、
前記ゲート絶縁膜および前記ゲート電極を挟んで、前記第2の不純物拡散層の反対側に設けられた第3の不純物拡散層と、を備え、
前記第2の不純物拡散層、前記ゲート絶縁膜、前記ゲート電極および前記第3の不純物拡散層は、電界効果トランジスタを構成している固体撮像装置。 - 請求項6に記載の固体撮像装置において、
前記第2および第3の不純物拡散層の表面がシリサイド化されている固体撮像装置。 - 請求項4乃至7いずれかに記載の固体撮像装置において、
前記ゲート電極の表面がシリサイド化されている固体撮像装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005364345A JP5175030B2 (ja) | 2005-12-19 | 2005-12-19 | 固体撮像装置 |
US11/634,084 US7800668B2 (en) | 2005-12-19 | 2006-12-06 | Solid state imaging device including a light receiving portion with a silicided surface |
CNB200610168624XA CN100514661C (zh) | 2005-12-19 | 2006-12-19 | 固态成像装置 |
US12/805,711 US8130297B2 (en) | 2005-12-19 | 2010-08-16 | Solid state imaging device including a light receiving portion with a silicided surface |
US13/365,155 US8810699B2 (en) | 2005-12-19 | 2012-02-02 | Solid state imaging device including a light receiving portion with a silicided surface |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005364345A JP5175030B2 (ja) | 2005-12-19 | 2005-12-19 | 固体撮像装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011170761A Division JP2011228748A (ja) | 2011-08-04 | 2011-08-04 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007173267A true JP2007173267A (ja) | 2007-07-05 |
JP5175030B2 JP5175030B2 (ja) | 2013-04-03 |
Family
ID=38172970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005364345A Expired - Fee Related JP5175030B2 (ja) | 2005-12-19 | 2005-12-19 | 固体撮像装置 |
Country Status (3)
Country | Link |
---|---|
US (3) | US7800668B2 (ja) |
JP (1) | JP5175030B2 (ja) |
CN (1) | CN100514661C (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011035095A (ja) * | 2009-07-31 | 2011-02-17 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
JP2013179334A (ja) * | 2007-06-29 | 2013-09-09 | Intellectual Venturesii Llc | 裏面照射イメージセンサを動作させる方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5175030B2 (ja) * | 2005-12-19 | 2013-04-03 | ルネサスエレクトロニクス株式会社 | 固体撮像装置 |
JP4976765B2 (ja) * | 2006-07-07 | 2012-07-18 | ルネサスエレクトロニクス株式会社 | 固体撮像装置 |
TWI467751B (zh) * | 2011-12-12 | 2015-01-01 | Sony Corp | A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device |
CN104009057A (zh) * | 2014-06-16 | 2014-08-27 | 北京思比科微电子技术股份有限公司 | 背照式图像传感器像素及图像传感器及其制作方法 |
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-
2005
- 2005-12-19 JP JP2005364345A patent/JP5175030B2/ja not_active Expired - Fee Related
-
2006
- 2006-12-06 US US11/634,084 patent/US7800668B2/en not_active Expired - Fee Related
- 2006-12-19 CN CNB200610168624XA patent/CN100514661C/zh not_active Expired - Fee Related
-
2010
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-
2012
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JPH03296280A (ja) * | 1990-04-16 | 1991-12-26 | Nec Corp | 赤外線センサ |
JPH06236986A (ja) * | 1993-02-10 | 1994-08-23 | Nec Corp | 赤外線固体撮像素子 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013179334A (ja) * | 2007-06-29 | 2013-09-09 | Intellectual Venturesii Llc | 裏面照射イメージセンサを動作させる方法 |
JP2011035095A (ja) * | 2009-07-31 | 2011-02-17 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US7800668B2 (en) | 2010-09-21 |
CN1988167A (zh) | 2007-06-27 |
JP5175030B2 (ja) | 2013-04-03 |
US20070139542A1 (en) | 2007-06-21 |
CN100514661C (zh) | 2009-07-15 |
US20100308387A1 (en) | 2010-12-09 |
US20120133810A1 (en) | 2012-05-31 |
US8810699B2 (en) | 2014-08-19 |
US8130297B2 (en) | 2012-03-06 |
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