JP2007144611A5 - - Google Patents

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Publication number
JP2007144611A5
JP2007144611A5 JP2006283282A JP2006283282A JP2007144611A5 JP 2007144611 A5 JP2007144611 A5 JP 2007144611A5 JP 2006283282 A JP2006283282 A JP 2006283282A JP 2006283282 A JP2006283282 A JP 2006283282A JP 2007144611 A5 JP2007144611 A5 JP 2007144611A5
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JP
Japan
Prior art keywords
layer
region
forming
sacrificial
insulating
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Application number
JP2006283282A
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English (en)
Japanese (ja)
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JP2007144611A (ja
JP5276785B2 (ja
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Application filed filed Critical
Priority to JP2006283282A priority Critical patent/JP5276785B2/ja
Priority claimed from JP2006283282A external-priority patent/JP5276785B2/ja
Publication of JP2007144611A publication Critical patent/JP2007144611A/ja
Publication of JP2007144611A5 publication Critical patent/JP2007144611A5/ja
Application granted granted Critical
Publication of JP5276785B2 publication Critical patent/JP5276785B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006283282A 2005-10-26 2006-10-18 半導体装置 Expired - Fee Related JP5276785B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006283282A JP5276785B2 (ja) 2005-10-26 2006-10-18 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005312034 2005-10-26
JP2005312034 2005-10-26
JP2006283282A JP5276785B2 (ja) 2005-10-26 2006-10-18 半導体装置

Publications (3)

Publication Number Publication Date
JP2007144611A JP2007144611A (ja) 2007-06-14
JP2007144611A5 true JP2007144611A5 (enExample) 2009-11-19
JP5276785B2 JP5276785B2 (ja) 2013-08-28

Family

ID=38206618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006283282A Expired - Fee Related JP5276785B2 (ja) 2005-10-26 2006-10-18 半導体装置

Country Status (1)

Country Link
JP (1) JP5276785B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009028807A (ja) * 2007-07-24 2009-02-12 Rohm Co Ltd Ｍｅｍｓセンサ
JP2012532470A (ja) * 2009-07-06 2012-12-13 アイメック Ｍｅｍｓ可変キャパシタの製造方法
DE102011057169A1 (de) * 2011-12-29 2013-07-04 Maxim Integrated Products, Inc. Mikroelektromechanisches System
JP2017531306A (ja) * 2014-08-01 2017-10-19 ウェスタン・ミシガン・ユニバーシティ・リサーチ・ファウンデイションＷｅｓｔｅｒｎ Ｍｉｃｈｉｇａｎ Ｕｎｉｖｅｒｓｉｔｙ Ｒｅｓｅａｒｃｈ Ｆｏｕｎｄａｔｉｏｎ 自立式電子デバイス

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0537082A (ja) * 1991-07-26 1993-02-12 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体の加工方法
JPH09113534A (ja) * 1995-10-23 1997-05-02 Yoshinobu Matsumoto 加速度センサー
JP4081868B2 (ja) * 1998-08-10 2008-04-30 日産自動車株式会社 微小装置の製造方法
US6238946B1 (en) * 1999-08-17 2001-05-29 International Business Machines Corporation Process for fabricating single crystal resonant devices that are compatible with integrated circuit processing
JP4772302B2 (ja) * 2003-09-29 2011-09-14 パナソニック株式会社 微小電気機械システムおよびその製造方法
JP2005166512A (ja) * 2003-12-04 2005-06-23 Yokogawa Electric Corp 継電器

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