JP2007095786A - Ｉｉｉ族窒化物系化合物半導体発光素子 - Google Patents
Ｉｉｉ族窒化物系化合物半導体発光素子 Download PDFInfo
- Publication number
- JP2007095786A JP2007095786A JP2005280052A JP2005280052A JP2007095786A JP 2007095786 A JP2007095786 A JP 2007095786A JP 2005280052 A JP2005280052 A JP 2005280052A JP 2005280052 A JP2005280052 A JP 2005280052A JP 2007095786 A JP2007095786 A JP 2007095786A
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- JP
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- Prior art keywords
- layer
- group iii
- iii nitride
- compound semiconductor
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 150000001875 compounds Chemical class 0.000 title abstract description 3
- 150000004767 nitrides Chemical class 0.000 title abstract description 3
- 238000004544 sputter deposition Methods 0.000 claims abstract description 8
- -1 nitride compound Chemical class 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 229910002601 GaN Inorganic materials 0.000 description 29
- 239000011777 magnesium Substances 0.000 description 15
- 229910052749 magnesium Inorganic materials 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Led Devices (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005280052A JP2007095786A (ja) | 2005-09-27 | 2005-09-27 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005280052A JP2007095786A (ja) | 2005-09-27 | 2005-09-27 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007095786A true JP2007095786A (ja) | 2007-04-12 |
| JP2007095786A5 JP2007095786A5 (enrdf_load_stackoverflow) | 2008-01-31 |
Family
ID=37981156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005280052A Withdrawn JP2007095786A (ja) | 2005-09-27 | 2005-09-27 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007095786A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009283785A (ja) * | 2008-05-23 | 2009-12-03 | Showa Denko Kk | Ｉｉｉ族窒化物半導体積層構造体およびその製造方法 |
| JP2009283895A (ja) * | 2008-12-15 | 2009-12-03 | Showa Denko Kk | Ｉｉｉ族窒化物半導体積層構造体 |
| JP2010116621A (ja) * | 2008-11-14 | 2010-05-27 | Stanley Electric Co Ltd | ＺｎＯ系半導体層とその製造方法、ＺｎＯ系半導体発光素子、及びＺｎＯ系半導体素子 |
| JP2010272887A (ja) * | 2008-03-13 | 2010-12-02 | Showa Denko Kk | Ｉｉｉ族窒化物半導体素子の製造方法及びｉｉｉ族窒化物半導体発光素子の製造方法 |
| JP2011108747A (ja) * | 2009-11-13 | 2011-06-02 | Showa Denko Kk | 半導体発光素子の製造方法およびランプ、電子機器、機械装置 |
| JP2016184718A (ja) * | 2015-03-24 | 2016-10-20 | 日亜化学工業株式会社 | 発光素子の製造方法 |
| CN109256443A (zh) * | 2018-09-03 | 2019-01-22 | 淮安澳洋顺昌光电技术有限公司 | 一种利用溅射GaN衬底的外延生长的半导体发光二极管及制备方法 |
-
2005
- 2005-09-27 JP JP2005280052A patent/JP2007095786A/ja not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010272887A (ja) * | 2008-03-13 | 2010-12-02 | Showa Denko Kk | Ｉｉｉ族窒化物半導体素子の製造方法及びｉｉｉ族窒化物半導体発光素子の製造方法 |
| JPWO2009113458A1 (ja) * | 2008-03-13 | 2011-07-21 | 昭和電工株式会社 | Ｉｉｉ族窒化物半導体素子及びｉｉｉ族窒化物半導体発光素子 |
| US8569794B2 (en) | 2008-03-13 | 2013-10-29 | Toyoda Gosei Co., Ltd. | Group III nitride semiconductor device and method for manufacturing the same, group III nitride semiconductor light-emitting device and method for manufacturing the same, and lamp |
| JP2009283785A (ja) * | 2008-05-23 | 2009-12-03 | Showa Denko Kk | Ｉｉｉ族窒化物半導体積層構造体およびその製造方法 |
| JP2010116621A (ja) * | 2008-11-14 | 2010-05-27 | Stanley Electric Co Ltd | ＺｎＯ系半導体層とその製造方法、ＺｎＯ系半導体発光素子、及びＺｎＯ系半導体素子 |
| JP2009283895A (ja) * | 2008-12-15 | 2009-12-03 | Showa Denko Kk | Ｉｉｉ族窒化物半導体積層構造体 |
| JP2011108747A (ja) * | 2009-11-13 | 2011-06-02 | Showa Denko Kk | 半導体発光素子の製造方法およびランプ、電子機器、機械装置 |
| JP2016184718A (ja) * | 2015-03-24 | 2016-10-20 | 日亜化学工業株式会社 | 発光素子の製造方法 |
| CN109256443A (zh) * | 2018-09-03 | 2019-01-22 | 淮安澳洋顺昌光电技术有限公司 | 一种利用溅射GaN衬底的外延生长的半导体发光二极管及制备方法 |
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