JP2007095213A - 光記録媒体、情報再生方法及び光情報再生装置 - Google Patents
光記録媒体、情報再生方法及び光情報再生装置 Download PDFInfo
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Abstract
【解決手段】 光入射側から、第1の基板10、第1の情報層11a、吸収変化層12、中間層13、第2の情報層11b、第2の基板14の順に積層されており、更に、第1の情報層11aは、光入射側からそれぞれ保護層15a、記録層16、保護層15b、反射層16の順に積層されている。また、第2の情報層11bは、光入射側からそれぞれ保護層15a、記録層16、保護層15b、反射層17、保護層15cの順に積層されている。
【選択図】 図1
Description
本発明の第1の実施形態に関わる光記録媒体は、図1に示すように、片面二層型を有する書換型光記録媒体で構成されており、光入射側から、第1の基板10、第1の情報層11a、吸収変化層12、中間層13、第2の情報層11b、第2の基板14の順に積層されて形成されている。更に、第1の情報層11aは、光入射側からそれぞれ保護層15a、記録層16、保護層15b、反射層17の順に積層されている。また、第2の情報層11bは、光入射側からそれぞれ保護層15a、記録層16、保護層15b、反射層17、保護層15cの順に積層されている。
トラックピッチ0.37μm、深さ50nmの溝が形成された厚さ0.6mmのポリカーボネイト基板(以下、第1の基板という)100上に光学干渉層101aとしてZnS-SiO2をRFマグネトロンスパッタ1kWで30nm成膜した後、記録層102としてGe40Sb4Te52Bi4をRFマグネトロンスパッタ0.2kWで10nm成膜した。引き続き、光学干渉層101bとしてZnS-SiO2をRFマグネトロンスパッタ1kWで10nm成膜した後、反射層103としてAg98Pd1Cu1をDCマグネトロンスパッタ1kWで10nm成膜することで、第1の基板100上に第1の情報層104を形成した。
実施例1と同様な材料及び方法を用いて、第1の基板100上に第1の情報層104を形成した。
実施例1と同様な材料及び方法を用いて、第1の基板100上に第1の情報層104を形成させた。
実施例1と同様な材料及び方法を用いて、第1の基板100上に第1の情報層104を形成した。
実施例1と同様な材料及び方法を用いて、第2の基板106上に第2の情報層110を形成した。
吸収変化層105を形成しない点以外は実施例1と同様な材料及び方法を用いて、図12に示すような片面二層書換型光記録媒体(以下、ディスクFという)を作製した。
本発明の第2の実施形態に関わる光記録媒体は、図13に示すように、片面二層型を有する再生専用型光記録媒体で構成されており、光入射側から、第1の基板120、吸収変化層121、中間層122、第2の基板123の順に積層されている。更に、第1の基板120上には、情報が記録されている複数の第1のピット124が形成されており、第1のピット124内を含む第1の基板120上には、吸収変化層121が配置された構成となっている。また、第2の基板123上にも第1の基板120と同様に、情報が記録されている複数の第2のピット125が形成された構成となっている。
トラックピッチ0.37μm、深さ50nmの溝が形成された厚さ0.6mmのポリカーボネイト基板(以下、第1の基板という)120の表面に射出成形を行い、第1のピット124を形成した。次に、第1の基板120上に、最初に、銀合金膜を10nm成膜し、引き続きサーモクロミズム材料であるZnO膜を100nm成膜し、吸収変化層121を形成した。
第1の基板120上に、サーモクロミズム材料であるZnO膜を成膜して吸収変化層121を形成しない以外は、実施例4と同様な素材及び方法を用いて、図14に示すような片面二層再生専用型記録媒体(以下、ディスクHという)を作製した。
本発明の第3の実施形態に関わる光記録媒体は、図15に示すように、片面三層型を有する再生専用型光記録媒体で構成されており、光入射側から、第1の基板130、第1の反射膜131a、第1の吸収変化層132a、第1の中間層133a、第2の反射膜131b、第2の吸収変化層132b、第2の中間層133b、第3の反射膜131c、第2の基板134の順に積層されている。更に、第1の基板130上、第1の中間層133a上、及び、第2の基板134上には図示しない第1の記録層135a、第2の記録層135b、第3の記録層135cが形成された構成となっている。
トラックピッチ0.37μm、深さ50nmの溝が形成された厚さ0.6mmのポリカーボネイト基板(以下、第1の基板という)130の表面に射出成形を行い、第1の記録層135aを形成させた。次に、第1の記録層135a上に反射膜131aとなる銀合金膜を2nm成膜し、さらにSiO2マトリクス中に粒径10nmのAlSb微粒子を体積含有率50vol%で分散させた第1の吸収変化層132aとなる半導体微粒子分散膜を50nm形成した。なお、AlSbは禁制帯幅が1.55eV(対応波長800nm)である。
11a 第1の情報層
11b 第2の情報層
12 吸収変化層
13 中間層、
14 第2の基板
15a 保護層
15b 保護層
15c 保護層
16 記録層
17 反射層
100 第1の基板
101a 光学干渉層
101b 光学干渉層
102 記録層
103 反射層
104 第1の情報層
105 吸収変化層
106 第2の基板
107a 光学干渉層
107b 光学干渉層
107c 光学干渉層
108 反射層
109 記録層
110 第2の情報層
111 中間層
113 吸収変化光
114 再生光
115 測定対象物
116 吸収変化光用LD
117 対物レンズ
118 再生光用LD
119 対物レンズ
120 第1の基板
121 吸収変化層
122 中間層
123 第2の基板
124 第1のピット
125 第2のピット
130 第1の基板
131a 第1の反射層
131b 第2の反射層
131c 第3の反射層
132a 第1の吸収変化層
132b 第2の吸収変化層
133a 第1の中間層
133b 第2の中間層
134 第2の基板
135a 第1の記録層
135b 第2の記録層
135c 第3の記録層
140 吸収変化光用LD
141 対物レンズ
142 吸収変化光
143 吸収変化光用LD
144 対物レンズ
145 吸収変化光
146 再生光用LD
147 対物レンズ
148 再生光
149 測定対象物
Claims (6)
- 情報を記録する記録層を備えた複数の情報層と、
前記情報層間に設けられ、光を照射することにより光の透過率が変化する吸収変化層と、
を備えたことを特徴とする光記録媒体。 - 前記吸収変化層は、サーモクロミズムを発現する材料で構成されていることを特徴とする請求項1に記載の光記録媒体。
- 前記吸収変化層は、過飽和吸収効果を発現する材料で構成されていることを特徴とする請求項1に記載の光記録媒体。
- 前記吸収変化層は、フォトクロミズムを発現する材料で構成されていることを特徴とする請求項1に記載の光記録媒体。
- 請求項1に記載の光記録媒体を用いた光記録媒体の情報再生方法であって、
前記光記録媒体に前記吸収変化層の光の透過率が変化する吸収変化光を照射する工程と、
前記光記録媒体の前記情報層を再生する再生光を照射する工程と、
を備えたことを特徴とする光記録媒体の情報再生方法。 - 情報を記録する記録層を備えた複数の情報層と、前記情報層間に設けられ、光を照射することにより光の透過率が変化する吸収変化層とを備えた光記録媒体と、
前記光記録媒体に前記吸収変化層の光の透過率が変化する吸収変化光を照射する吸収変化光照射手段と、
前記光記録媒体の前記情報層を再生する再生光を照射する再生光照射手段と、
を備えたことを特徴とする光情報再生装置。
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