JP2007076978A - セラミックナノワイヤー及びイオンビーム照射によるその製造法 - Google Patents
セラミックナノワイヤー及びイオンビーム照射によるその製造法 Download PDFInfo
- Publication number
- JP2007076978A JP2007076978A JP2005269602A JP2005269602A JP2007076978A JP 2007076978 A JP2007076978 A JP 2007076978A JP 2005269602 A JP2005269602 A JP 2005269602A JP 2005269602 A JP2005269602 A JP 2005269602A JP 2007076978 A JP2007076978 A JP 2007076978A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- ceramic
- polymer
- nanowire
- based polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/571—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained from Si-containing polymer precursors or organosilicon monomers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/977—Preparation from organic compounds containing silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62227—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining fibres
- C04B35/62272—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining fibres based on non-oxide ceramics
- C04B35/62277—Fibres based on carbides
- C04B35/62281—Fibres based on carbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/6269—Curing of mixtures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/52—Constituents or additives characterised by their shapes
- C04B2235/5208—Fibers
- C04B2235/526—Fibers characterised by the length of the fibers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/52—Constituents or additives characterised by their shapes
- C04B2235/5208—Fibers
- C04B2235/5264—Fibers characterised by the diameter of the fibers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5454—Particle size related information expressed by the size of the particles or aggregates thereof nanometer sized, i.e. below 100 nm
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/102—Fullerene type base or coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
- Y10S977/892—Liquid phase deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Structural Engineering (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Inorganic Fibers (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Products (AREA)
Abstract
セラミック前駆体のケイ素系高分子を薄膜化しイオンビームにより円筒架橋部を形成し、これを焼成することによって、数量、太さ、長さの制御された直径数ナノ〜数十ナノのセラミックスナノワイヤーを均一に、簡便に作製する方法を提供する。
【解決手段】
セラミック前駆体として使用可能なケイ素系高分子を用いて形成した薄膜にイオンビーム照射すると形成される円筒架橋部を溶媒抽出することにより得られるケイ素系高分子ナノワイヤーを、電離放射線で再架橋させ、セラミックナノワイヤーの形状保持及び収率を向上させる直径数ナノから数十ナノのセラミックナノワイヤーの合成方法。
【選択図】 図2
Description
Formation of Quantum Wires along Ion Projectiles in Si Backbone Polymers, S. Seki, K. Maeda, S. Tagawa, H. Kudoh, M. Sugimoto, Y. Morita, and H. Shibata, Adv. Mater. 13 (2001), 1663-1665.
ケイ素系高分子を、耐熱性を有する平滑基板上に、スピンコート、ディッピングなどの手法で、薄膜化する。これまで解説してきた手法により作製したナノワイヤーの一端を平滑基板上に固定するには、イオンビームが薄膜を貫通し、基板まで到達する必要があり、このため、薄膜の厚さをケイ素系高分子中のイオンビームの飛程よりも短く制御する。イオンビーム照射により、イオン個々の飛跡に沿ってケイ素系高分子薄膜中に円筒架橋部を形成した後、イオンビームが貫通しなかった未架橋部を溶媒により溶かして除去する。溶媒としては、ケイ素系高分子が可溶なテトラヒドロフラン、トルエン、ベンゼン、シクロヘキサン、ノルマルヘキサン、キシレン等が使用可能である。
有機ケイ素系高分子であるポリカルボシラン(PCS)及び、PCSにポリビニルシラン(PVS)を20%ブレンドした高分子ブレンドをトルエン溶媒に溶かし5wt%溶液とした。平滑基板としてシリコンウェハを用い、スピンコート法により、厚さ100〜1000nmに薄膜化した。薄膜を塗布した基板を真空照射チェンバーに設置し、サイクロトロンからのイオンビームを均一にスキャンしながら照射して円筒架橋部を形成した。この照射により形成される円筒架橋部の直径を表1に示す。イオンの種類及び高分子の種類により円筒架橋部の直径が変化しており、制御可能であることが分かる。
[発明の効果]
Claims (14)
- セラミック前駆体として使用可能なケイ素系高分子の薄膜にイオンビーム照射することにより形成される円筒架橋部を溶媒で抽出した後、不活性ガス中で焼成することからなる直径数ナノから数十ナノのセラミックナノワイヤーの合成方法。
- セラミック前駆体として使用可能なケイ素系高分子が、ポリカルボシランである請求項1記載の方法。
- セラミック前駆体として使用可能なケイ素系高分子が、2種類以上のケイ素系高分子を混合して得られる高分子ブレンドである請求項1記載の方法。
- セラミック前駆体として使用可能なケイ素系高分子が、ポリカルボシランとポリビニルシランを混合して得られる高分子ブレンドである請求項3記載の方法。
- 高分子ブレンドの混合比を変えることによりセラミックナノワイヤーの太さを制御する請求項3記載の方法。
- セラミック前駆体として使用可能なケイ素系高分子の分子量を変えることによりセラミックナノワイヤーの太さを制御する請求項1記載の方法。
- セラミック前駆体として使用可能なケイ素系高分子にイオンビームを照射したときに付与されるエネルギー量を変えることによりセラミックナノワイヤーの太さを制御する請求項1記載の方法。
- セラミック前駆体として使用可能なケイ素系高分子が、2種類以上のケイ素系高分子を混合して得られる高分子ブレンドである請求項7記載の方法。
- セラミック前駆体として使用可能なケイ素系高分子を用いて形成した薄膜の厚さを変えることによりセラミックナノワイヤーの長さを制御する請求項1記載の方法。
- セラミック前駆体として使用可能なケイ素系高分子が、2種類以上のケイ素系高分子を混合して得られる高分子ブレンドである請求項9記載の方法。
- セラミック前駆体として使用可能なケイ素系高分子を用いて形成した薄膜にイオンビーム照射すると形成される円筒架橋部を溶媒抽出することにより得られるケイ素系高分子ナノワイヤーを、電離放射線で再架橋させた後に焼成することにより、セラミックナノワイヤーの形状保持及び収率を向上させる直径数ナノから数十ナノのセラミックナノワイヤーの合成方法。
- 請求項1の方法で作製した円筒架橋部の焼成を、アンモニア中で行うことにより合成される窒化ケイ素セラミックからなるセラミックナノワイヤー。
- 請求項11の方法で作製した円筒架橋部の焼成をアンモニア中で行うことにより合成される窒化ケイ素セラミックからなるセラミックナノワイヤー。
- 請求項1乃至請求項11のいずれかの方法におけるイオンビーム照射によりケイ素系高分子から合成される炭化ケイ素セラミックからなるセラミックナノワイヤー。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005269602A JP4701369B2 (ja) | 2005-09-16 | 2005-09-16 | セラミックナノワイヤー及びイオンビーム照射によるその製造法 |
US11/520,677 US7731927B2 (en) | 2005-09-16 | 2006-09-14 | Ceramic nanowires and a process for producing them by ion beam irradiation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005269602A JP4701369B2 (ja) | 2005-09-16 | 2005-09-16 | セラミックナノワイヤー及びイオンビーム照射によるその製造法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007076978A true JP2007076978A (ja) | 2007-03-29 |
JP4701369B2 JP4701369B2 (ja) | 2011-06-15 |
Family
ID=37937647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005269602A Expired - Fee Related JP4701369B2 (ja) | 2005-09-16 | 2005-09-16 | セラミックナノワイヤー及びイオンビーム照射によるその製造法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7731927B2 (ja) |
JP (1) | JP4701369B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010070867A (ja) * | 2008-09-16 | 2010-04-02 | Japan Atomic Energy Agency | ナノファイバー及びその製造法 |
JP2010076044A (ja) * | 2008-09-26 | 2010-04-08 | National Institute For Materials Science | 有機高分子ナノワイヤーとその製造方法 |
CN101830447A (zh) * | 2010-06-03 | 2010-09-15 | 北京化工大学 | 一种β-氮化硅纳米线的制备方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102586953B (zh) * | 2012-01-17 | 2013-06-12 | 中国人民解放军国防科学技术大学 | 一种聚碳硅烷纤维的催化交联方法 |
CN113666765B (zh) * | 2021-09-29 | 2022-05-06 | 北京理工大学 | 一种连续纤维增强高熵陶瓷基复合材料及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002097074A (ja) * | 2000-09-19 | 2002-04-02 | Japan Atom Energy Res Inst | ケイ素系ポリマーの放射線照射による炭化ケイ素複合材料の製造方法 |
JP2003082532A (ja) * | 2001-09-12 | 2003-03-19 | Japan Atom Energy Res Inst | ケイ素系ポリマーの放射線照射によるマイクロセラミックチューブの製造法 |
-
2005
- 2005-09-16 JP JP2005269602A patent/JP4701369B2/ja not_active Expired - Fee Related
-
2006
- 2006-09-14 US US11/520,677 patent/US7731927B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002097074A (ja) * | 2000-09-19 | 2002-04-02 | Japan Atom Energy Res Inst | ケイ素系ポリマーの放射線照射による炭化ケイ素複合材料の製造方法 |
JP2003082532A (ja) * | 2001-09-12 | 2003-03-19 | Japan Atom Energy Res Inst | ケイ素系ポリマーの放射線照射によるマイクロセラミックチューブの製造法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010070867A (ja) * | 2008-09-16 | 2010-04-02 | Japan Atomic Energy Agency | ナノファイバー及びその製造法 |
JP2010076044A (ja) * | 2008-09-26 | 2010-04-08 | National Institute For Materials Science | 有機高分子ナノワイヤーとその製造方法 |
CN101830447A (zh) * | 2010-06-03 | 2010-09-15 | 北京化工大学 | 一种β-氮化硅纳米线的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US7731927B2 (en) | 2010-06-08 |
JP4701369B2 (ja) | 2011-06-15 |
US20100111805A1 (en) | 2010-05-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9045347B2 (en) | Stiochiometric silicon carbide fibers from thermo-chemically cured polysilazanes | |
JP4701369B2 (ja) | セラミックナノワイヤー及びイオンビーム照射によるその製造法 | |
US8987402B2 (en) | Stoichiometric silicon carbide fibers from thermo-chemically cured polysilazanes | |
US20100234481A1 (en) | Porous ceramics manufacturing method | |
JP2008100864A (ja) | カーボンナノチューブ集合体およびその製造方法 | |
JPH11503206A (ja) | 炭化物微小フィブリルとその製法 | |
CN108193322B (zh) | 一种碳化硅纳米纤维的制备方法 | |
JP4552019B2 (ja) | 炭化ケイ素系ナノ繊維の製造方法 | |
Kim et al. | Effect of heating rate on the properties of silicon carbide fiber with chemical-vapor-cured polycarbosilane fiber | |
WO1993007103A1 (en) | Sic fibers having low oxygen content and methods of preparation | |
Xie et al. | Synthesis and characterization of molybdenum‐modified polycarbosilane for SiC (Mo) ceramics | |
US6780370B2 (en) | Process for producing microceramic tubes by radiation exposure of silicon-based polymers | |
JP4238368B2 (ja) | 炭化ケイ素結合カーボンナノチューブ固化体とその製造方法 | |
JP2004360115A (ja) | 炭化ケイ素系ナノ繊維の製造方法 | |
JP4925084B2 (ja) | ケイ素系混合高分子材料による炭化ケイ素(SiC)薄膜の合成法 | |
JP5557231B2 (ja) | 多孔質セラミックス繊維体の製造方法 | |
KR20110063040A (ko) | 실리콘카바이드 및 이의 제조방법 | |
US5278110A (en) | SiC fibers having low oxygen content and methods of preparation | |
JP4996583B2 (ja) | 表面にグラファイトナノ構造層を有するセルロース炭化物構造体およびその合成方法 | |
CN106087112A (zh) | 一种表面具有碳层的连续SiC纤维的制备方法 | |
JP4478770B2 (ja) | ケイ素系ポリマーブレンドによる薄壁マイクロセラミックチューブの製造方法 | |
JP4999081B2 (ja) | 高強度炭化ケイ素マイクロチューブの製造方法 | |
KR102348935B1 (ko) | 비정질 SiC 블록 제조방법 | |
JP2006176924A (ja) | 炭化ケイ素マイクロチューブの冷却照射による壁厚制御法 | |
Kang et al. | Fabrication of SiC mat by radiation processing |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080908 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101102 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101221 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110113 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20110113 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20110113 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110209 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |