JP5557231B2 - 多孔質セラミックス繊維体の製造方法 - Google Patents
多孔質セラミックス繊維体の製造方法 Download PDFInfo
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- JP5557231B2 JP5557231B2 JP2009128693A JP2009128693A JP5557231B2 JP 5557231 B2 JP5557231 B2 JP 5557231B2 JP 2009128693 A JP2009128693 A JP 2009128693A JP 2009128693 A JP2009128693 A JP 2009128693A JP 5557231 B2 JP5557231 B2 JP 5557231B2
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Description
<ポリマーブレンドの作製>
<不融化処理>
<焼成(セラミック化及び多孔質化)>
Claims (3)
- SiCセラミックスの前駆体高分子材料にSi-O-Si基を主鎖とする高分子材料を相溶限界量よりも過剰に混合したポリマーブレンドを出発物質とし、不融化し、その後焼成を行う多孔質セラミックス繊維体の製造方法において、
前記焼成を行う段階において、前記ポリマーブレンドを不活性雰囲気下で1000℃の温度まで昇温させ、一定の時間保持する1次焼成を行ってセラミック化し、その後1300℃以上1500℃以下の温度までさらに昇温させ、一定の時間保持する2次焼成を行って多孔質化することを特徴とする多孔質セラミックス繊維体の製造方法。 - 請求項1に記載の製造方法において、前記SiCセラミックスの前駆体高分子材料がポリカルボシラン(PCS)であって、前記Si-O-Si基を主鎖とする高分子材料がシリコーンオイルであることを特徴とする多孔質セラミックス繊維体の製造方法。
- 請求項1又は2に記載の製造方法において、前記2次焼成を0.5時間行うことを特徴とする多孔質セラミックス繊維体の製造方法。
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JP2009128693A JP5557231B2 (ja) | 2009-05-28 | 2009-05-28 | 多孔質セラミックス繊維体の製造方法 |
US12/721,782 US20100234481A1 (en) | 2009-03-13 | 2010-03-11 | Porous ceramics manufacturing method |
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JP2009128693A JP5557231B2 (ja) | 2009-05-28 | 2009-05-28 | 多孔質セラミックス繊維体の製造方法 |
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JP2010275143A JP2010275143A (ja) | 2010-12-09 |
JP5557231B2 true JP5557231B2 (ja) | 2014-07-23 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5598913B2 (ja) * | 2010-07-28 | 2014-10-01 | 独立行政法人日本原子力研究開発機構 | セラミックスマイクロチューブの作製方法 |
CN103160955B (zh) * | 2013-03-18 | 2014-09-17 | 中国人民解放军国防科学技术大学 | 一种表面富碳结构的连续SiC纤维的制备方法 |
CN112079639A (zh) * | 2020-08-21 | 2020-12-15 | 西安理工大学 | 一种采用聚合物前驱体制备多孔碳化锆陶瓷的方法 |
CN113637325B (zh) * | 2021-07-29 | 2023-04-07 | 浙江元通线缆制造有限公司 | 一种长寿命布电线用陶瓷化硅橡胶材料及其制备方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS61275179A (ja) * | 1985-05-30 | 1986-12-05 | 日本特殊陶業株式会社 | 多孔質磁器の製造方法 |
JP4334790B2 (ja) * | 2001-09-19 | 2009-09-30 | 独立行政法人科学技術振興機構 | SiC系複合材料用SiC強化繊維の製造 |
JP4761119B2 (ja) * | 2005-07-13 | 2011-08-31 | 独立行政法人産業技術総合研究所 | 炭化珪素系多孔質成形体の製造方法 |
JP4925084B2 (ja) * | 2005-09-14 | 2012-04-25 | 独立行政法人日本原子力研究開発機構 | ケイ素系混合高分子材料による炭化ケイ素(SiC)薄膜の合成法 |
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