JP2007073701A5 - - Google Patents

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JP2007073701A5
JP2007073701A5 JP2005258270A JP2005258270A JP2007073701A5 JP 2007073701 A5 JP2007073701 A5 JP 2007073701A5 JP 2005258270 A JP2005258270 A JP 2005258270A JP 2005258270 A JP2005258270 A JP 2005258270A JP 2007073701 A5 JP2007073701 A5 JP 2007073701A5
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semiconductor layer
layer
thin film
film transistor
band gap
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少なくとも、基板上に、半導体層と、ソース電極と、ドレイン電極と、ゲート絶縁膜と、ゲート電極とを有する薄膜トランジスタであって、
前記ゲート絶縁膜が、Ｉｎと、Ｚｎと、Ｏと、Ｇａ，Ａｌ，Ｆｅ，Ｓｎ，Ｍｇ，Ｃａ，Ｓｉ，Ｇｅのうち少なくとも１種とを含むアモルファス酸化物を有し、前記ゲート絶縁膜の抵抗値が１０１１Ω・ｃｍ以上であることを特徴とする薄膜トランジスタ。 A thin film transistor having a semiconductor layer, a source electrode, a drain electrode, a gate insulating film, and a gate electrode on at least a substrate ;
The gate insulating film includes an amorphous oxide containing In, Zn, O, and at least one of Ga, Al, Fe, Sn, Mg, Ca, Si, and Ge ; A thin film transistor having a resistance value of 10 11 Ω · cm or more. 前記半導体層が、Ｉｎと、Ｚｎと、Ｏと、Ｇａ，Ａｌ，Ｆｅ，Ｓｎ，Ｍｇ，Ｃａ，Ｓｉ，Ｇｅのうち少なくとも１種とを含むアモルファス酸化物を有し、
前記半導体層の抵抗値が１０１０Ω・ｃｍ未満であり、前記半導体層のバンドギャップが前記ゲート絶縁膜のバンドギャップよりも小さいことを特徴とする請求項１に記載の薄膜トランジスタ。 The semiconductor layer has a In, and Zn, and O, Ga, Al, Fe, Sn, Mg, Ca, Si, and including an amorphous oxide and at least one of Ge,
Wherein the resistance value of the semiconductor layer is Ri der less than 10 10 Ω · cm, a thin film transistor according to claim 1, the band gap of the semiconductor layer being less than the band gap of the gate insulating film. 少なくとも、基板上に、半導体層と、ソース電極と、ドレイン電極と、ゲート絶縁膜と、ゲート電極とを有する薄膜トランジスタであって、
前記半導体層と前記ゲート絶縁膜との間に抵抗層を有し、
前記抵抗層は、Ｉｎと、Ｚｎと、Ｏと、Ｇａ，Ａｌ，Ｆｅ，Ｓｎ，Ｍｇ，Ｃａ，Ｓｉ，Ｇｅのうち少なくとも１種とを含むアモルファス酸化物を有し、
前記抵抗層の抵抗値が１０１１Ω・ｃｍ以上、膜厚が１ｎｍ以上２００ｎｍ以下であり、かつ、前記抵抗層のバンドギャップは前記ゲート絶縁膜のバンドギャップよりも小さいことを特徴とする薄膜トランジスタ。 A thin film transistor having a semiconductor layer, a source electrode, a drain electrode, a gate insulating film, and a gate electrode on at least a substrate ;
Having a resistance layer between the semiconductor layer and the gate insulating film;
The resistance layer includes an amorphous oxide containing In, Zn, O, and at least one of Ga, Al, Fe, Sn, Mg, Ca, Si, and Ge ,
Wherein the resistance value of the resistance layer is 10 11 Ω · cm or more, thickness of Ri der than 200nm or less 1 nm, and the band gap of the resistance layer is characterized by less than the band gap of the gate insulating film the thin film transistor . 前記半導体層が前記抵抗層の酸素以外の少なくとも１種の組成を含む酸化物半導体であり、且つ前記半導体層のバンドギャップが前記抵抗層のバンドギャップよりも小さいことを特徴とする請求項３に記載の薄膜トランジスタ。 An oxide semiconductor wherein the semiconductor layer comprises at least one composition other than oxygen in the resistive layer, and to claim 3, the band gap of the semiconductor layer being less than the band gap of the resistance layer The thin film transistor described. 前記半導体層が主にキャリア発生層としての機能を有し、前記抵抗層が主にキャリア輸送層としての機能を有することを特徴とする請求項３に記載の薄膜トランジスタ。   4. The thin film transistor according to claim 3, wherein the semiconductor layer mainly has a function as a carrier generation layer, and the resistance layer mainly has a function as a carrier transport layer. 前記半導体層が、Ｉｎと、Ｚｎと、Ｏと、Ｇａ，Ａｌ，Ｆｅ，Ｓｎ，Ｍｇ，Ｃａ，Ｓｉ，Ｇｅのうち少なくとも１種と、を含むアモルファス酸化物を有し、
前記半導体層の抵抗値が１０１０Ω・ｃｍ未満であることを特徴とする請求項３に記載の薄膜トランジスタ。 The semiconductor layer has an amorphous oxide containing In, Zn, O, and at least one of Ga, Al, Fe, Sn, Mg, Ca, Si, and Ge ;
4. The thin film transistor according to claim 3, wherein a resistance value of the semiconductor layer is less than 10 10 Ω · cm.
JP2005258270A 2005-09-06 2005-09-06 Thin film transistor using amorphous oxide layer Active JP4981283B2 (en)

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JP2007073701A JP2007073701A (en) 2007-03-22
JP2007073701A5 true JP2007073701A5 (en) 2008-10-23
JP4981283B2 JP4981283B2 (en) 2012-07-18

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