JPS6183684A - Method of bonding ceramic and metal - Google Patents
Method of bonding ceramic and metalInfo
- Publication number
- JPS6183684A JPS6183684A JP59201603A JP20160384A JPS6183684A JP S6183684 A JPS6183684 A JP S6183684A JP 59201603 A JP59201603 A JP 59201603A JP 20160384 A JP20160384 A JP 20160384A JP S6183684 A JPS6183684 A JP S6183684A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- alloy
- ceramics
- joining
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Ceramic Products (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、異種セラミックス間の接合方法に係り、電子
機器2機械構造部品などに好適な異種セラミックスの接
合方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a method for joining different types of ceramics, and more particularly, to a method for joining different types of ceramics suitable for mechanical structural parts of electronic equipment 2 and the like.
セラミックス同士の接合は、セラミックスと金属の接合
と同じ方法が適用されており、(1)セラミックス表面
にN t 、 A uなどの薄膜を形成させた後、はん
だ付する方法、(2)有機接着剤による方法、(3)セ
ラミックス表面に酸化性金属を介在させる方法、などが
知られている。しかし、(1)は耐熱性が低いばかりで
なく、薄膜のセラミックスへの付着力によって接合強度
が支配され、信頼性が低い。(2)は最も安価な接合方
法であるが、信頼性が著しく劣るのが欠点である。(3
)はメタライズのために厳密な雰囲気コントロールや高
温加熱が必要であり、膨張率の異なるセラミックスとの
接合では熱応力により接合強度は低下する、などの欠点
をもっている。The same methods used for joining ceramics and metals are used to join ceramics together: (1) forming a thin film of Nt, Au, etc. on the ceramic surface and then soldering; (2) organic adhesion. (3) A method in which an oxidizing metal is interposed on the ceramic surface, and the like are known. However, (1) not only has low heat resistance, but also has low reliability because the bonding strength is controlled by the adhesion of the thin film to the ceramic. (2) is the cheapest joining method, but has the disadvantage of significantly lower reliability. (3
) requires strict atmosphere control and high-temperature heating for metallization, and has drawbacks such as reduced bonding strength due to thermal stress when bonded to ceramics with different expansion coefficients.
本発明の目的は、従来技術の問題点を解消し、メタライ
ズ処理を必要とせず、かつ、接合温度を低く抑えること
によって信頼性の高い接合体を得ることができる異種セ
ラミックスの接合方法を提供することにある。An object of the present invention is to provide a method for joining dissimilar ceramics that eliminates the problems of the prior art, does not require metallization treatment, and can obtain a highly reliable joined body by keeping the joining temperature low. There is a particular thing.
本発明の異種セラミックスの接合方法は、Al−Si系
合金の溶融部は、 Sin2. Zr、 02゜S i
C,Si、 N4 + Al 、0. 、 BaTi
0などのほぼすベてのセラミックスと反応し、かつ、溶
融部が接合温度から冷却過程で発生する熱応力を吸収す
ることに注目し、異種セラミックス間の接合界面にAn
−8i合金シートあるいはAl−Si合金をクラッドし
たシートを介在させて、加熱、加圧することを特徴とす
る。In the method for joining dissimilar ceramics according to the present invention, the fused portion of the Al-Si alloy is formed of Sin2. Zr, 02°S i
C, Si, N4 + Al, 0. , BaTi
Focusing on the fact that it reacts with almost all ceramics such as 0, and that the molten part absorbs the thermal stress generated during the cooling process from the joining temperature, An
It is characterized by heating and pressurizing with a -8i alloy sheet or a sheet clad with an Al-Si alloy interposed therebetween.
以下本発明の実施例について説明する。 Examples of the present invention will be described below.
〔実施例1 ) Si、 N4とSiCとの接合第1図
に示すように、Si、 N、 丸棒1とSiC丸棒2
との間にAnを芯材とし面表層にへ〇−81−Mg合金
を用いたインサート材3を介在させ、真空雰囲気(10
−’torr)で接合温度600℃、圧力1.0 kg
/mm” 、加熱時間15分で接合した。この場合、5
80℃付近でインサート材3の面表層であるA Q −
S i −M g合金は溶融状態となり、Si、N41
及びSiC2と接合する。このようにして接合されたS
i3N41とS ic2には、接合温度が低く、かつ、
インサート材3の芯材が応力緩衝材となり、亀裂などの
発生は認められなかった。この接合品の4点曲げ試験を
行ったところ、l4kg/mm”の曲げ強さが得られ、
充分に接合していることが明らかとなった。[Example 1] Joining of Si, N4 and SiC As shown in Fig. 1, Si, N, round bar 1 and SiC round bar 2
An insert material 3 made of An-81-Mg alloy is interposed between the core material and the surface layer, and a vacuum atmosphere (10
-'torr), bonding temperature 600℃, pressure 1.0kg
/mm”, and the heating time was 15 minutes. In this case, 5
At around 80°C, the surface layer of the insert material 3 A Q −
The Si-Mg alloy becomes molten and Si, N41
and bonded with SiC2. S joined in this way
i3N41 and Sic2 have low junction temperature and
The core material of insert material 3 served as a stress buffer material, and no cracks were observed. When this bonded product was subjected to a 4-point bending test, a bending strength of 14kg/mm'' was obtained.
It became clear that the bonding was sufficient.
〔実施例2 ) BaTi0jとAl、0.との接合第
2図に示すように、板状のBaTi0i 4と板状のA
n、0,5とを組合せ、実施例1と同一のインサート材
3を介在させて、真空中(io−’七orr )、接合
温度600℃、圧力0.05〜0.1 kg/mm”で
接合した。この結果は、BaTi0. 4. An 、
0.5には全く変形は認められず、同時に、肉眼検査、
X線検査によっても割れなどの欠陥は認められなかった
。[Example 2] BaTi0j and Al, 0. As shown in Figure 2, plate-shaped BaTi0i 4 and plate-shaped A
n, 0, and 5, with the same insert material 3 as in Example 1 interposed, in vacuum (io-'7 orr), at a bonding temperature of 600°C, and at a pressure of 0.05 to 0.1 kg/mm. This result shows that BaTi0.4.An,
No deformation was observed in 0.5, and at the same time, visual inspection
No defects such as cracks were found by X-ray inspection.
〔実施例3〕ガラスとAl2,0.との接合第3図に示
すように、重版のガラス6と1.0.リング7との界面
に、実施例1と同一のインサート材3を介在させて、真
空中(10−’t、orr)−接合温度600℃、圧力
0.05kg/+on+”で接合した。このようにして
接合したガラス6とAl、0.7とのHeリーク試験を
実施したところ、10−’t、orr−ρ/see以下
の気密性が確認されたゆ〔発明の効果〕
以上説明したように1本発明によれば、接合温度が低く
、かつ、溶融したAl2−Si −Mg合金層が熱応力
緩衝材ともなり熱膨張率が異なるセラミックスの接合に
おいても信頼性が向上する。また、接合温度が低く、表
層が溶融しているために、加圧力も小さくすることが可
能で変形の少ない接合体が可能となる。[Example 3] Glass and Al2,0. As shown in FIG. 3, the reprinted glass 6 and 1.0. The same insert material 3 as in Example 1 was interposed at the interface with the ring 7, and the bonding was carried out in vacuum (10-'t, orr) at a bonding temperature of 600°C and a pressure of 0.05 kg/+on+''. When a He leak test was conducted on Glass 6 and Al, 0.7 bonded together, it was confirmed that the airtightness was less than 10-'t, orr-ρ/see. [Effects of the Invention] As explained above. According to the present invention, the bonding temperature is low, and the molten Al2-Si-Mg alloy layer also serves as a thermal stress buffer, improving reliability even in bonding ceramics with different coefficients of thermal expansion. Since the temperature is low and the surface layer is molten, it is possible to reduce the pressing force, making it possible to create a joined body with less deformation.
また、従来、多(用いられるはんだ付やロー付に比べる
とメタライズ処理が不要となり、強度も向上する効果が
ある。In addition, compared to the conventional methods of soldering and brazing, metallization is not required, and the strength is also improved.
第1〜3図は本発明の接合方法の説明図で、第1図はS
i、 N、 とSiCとの接合を示す図、第2図はB
aTiO3とtQ203 との接合を示す図、@3図は
ガラスとAl、Ozとの接合を示す図である。
1・・・Si、 N、、 2・・・SiC13・・・イ
ンサート材、4−BaTiO,、5=・Al 20..
6−ガラス、7・・・第 1 口
竿2霞
り1 to 3 are explanatory diagrams of the joining method of the present invention, and FIG.
A diagram showing the bonding of i, N, and SiC, Figure 2 is B
A diagram showing the bonding between aTiO3 and tQ203, and Figure @3 is a diagram showing the bonding between glass, Al, and Oz. 1...Si, N, 2...SiC13...insert material, 4-BaTiO, 5=.Al 20. ..
6-Glass, 7...1st mouthpiece 2 haze
Claims (1)
して、Al−Si系合金からなるシートまたはAl−S
i系合金より高い固相線温度をもつ金属を芯材、Al−
Si系合金を両表皮材とするシートを用い、Al−Si
系合金の固相線以上の温度に加熱するとともに加圧する
ことを特徴とする異種セラミックスの接合方法。In a method for joining dissimilar ceramics, a sheet made of Al-Si alloy or Al-S is used as an insert material.
The core material is a metal with a solidus temperature higher than that of the i-based alloy, and Al-
Using a sheet with Si-based alloy as both skin materials, Al-Si
A method for joining dissimilar ceramics, which is characterized by heating to a temperature above the solidus line of the alloy and applying pressure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59201603A JPS6183684A (en) | 1984-09-28 | 1984-09-28 | Method of bonding ceramic and metal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59201603A JPS6183684A (en) | 1984-09-28 | 1984-09-28 | Method of bonding ceramic and metal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6183684A true JPS6183684A (en) | 1986-04-28 |
Family
ID=16443784
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59201603A Pending JPS6183684A (en) | 1984-09-28 | 1984-09-28 | Method of bonding ceramic and metal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6183684A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03186592A (en) * | 1989-12-15 | 1991-08-14 | Sumitomo Metal Mining Co Ltd | Light aerated concrete panel lifting jig |
JP2006182597A (en) * | 2004-12-27 | 2006-07-13 | Noritake Co Ltd | Silicon-based ceramic joining material, joined body and its manufacturing method |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007073701A (en) * | 2005-09-06 | 2007-03-22 | Canon Inc | Thin-film transistor using amorphous oxide layer |
WO2009058842A1 (en) * | 2007-10-30 | 2009-05-07 | Moxtronics, Inc. | High-performance heterostructure fet devices and methods |
JP2009167087A (en) * | 2007-12-17 | 2009-07-30 | Fujifilm Corp | Oriented inorganic crystalline film, process for producing the same and semiconductor device |
JP2009218562A (en) * | 2008-03-07 | 2009-09-24 | Samsung Electronics Co Ltd | Transistor and method of manufacturing the same |
JP2010153802A (en) * | 2008-11-20 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method of manufacturing the same |
JP2010165999A (en) * | 2009-01-19 | 2010-07-29 | Fujifilm Corp | Method for manufacturing thin film transistor and method for manufacturing electro-optical device |
JP2010177431A (en) * | 2009-01-29 | 2010-08-12 | Fujifilm Corp | Thin film transistor, method for manufacturing polycrystalline oxide semiconductor thin film, and method for manufacturing thin film transistor |
JP2010232651A (en) * | 2009-03-05 | 2010-10-14 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JP2011003856A (en) * | 2009-06-22 | 2011-01-06 | Fujifilm Corp | Thin-film transistor, and method of manufacturing thin-film transistor |
-
1984
- 1984-09-28 JP JP59201603A patent/JPS6183684A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007073701A (en) * | 2005-09-06 | 2007-03-22 | Canon Inc | Thin-film transistor using amorphous oxide layer |
WO2009058842A1 (en) * | 2007-10-30 | 2009-05-07 | Moxtronics, Inc. | High-performance heterostructure fet devices and methods |
JP2009167087A (en) * | 2007-12-17 | 2009-07-30 | Fujifilm Corp | Oriented inorganic crystalline film, process for producing the same and semiconductor device |
JP2009218562A (en) * | 2008-03-07 | 2009-09-24 | Samsung Electronics Co Ltd | Transistor and method of manufacturing the same |
JP2010153802A (en) * | 2008-11-20 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method of manufacturing the same |
JP2010165999A (en) * | 2009-01-19 | 2010-07-29 | Fujifilm Corp | Method for manufacturing thin film transistor and method for manufacturing electro-optical device |
JP2010177431A (en) * | 2009-01-29 | 2010-08-12 | Fujifilm Corp | Thin film transistor, method for manufacturing polycrystalline oxide semiconductor thin film, and method for manufacturing thin film transistor |
JP2010232651A (en) * | 2009-03-05 | 2010-10-14 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JP2011003856A (en) * | 2009-06-22 | 2011-01-06 | Fujifilm Corp | Thin-film transistor, and method of manufacturing thin-film transistor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03186592A (en) * | 1989-12-15 | 1991-08-14 | Sumitomo Metal Mining Co Ltd | Light aerated concrete panel lifting jig |
JP2006182597A (en) * | 2004-12-27 | 2006-07-13 | Noritake Co Ltd | Silicon-based ceramic joining material, joined body and its manufacturing method |
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