JPS632866A - Method of soldering ceramic to metal - Google Patents
Method of soldering ceramic to metalInfo
- Publication number
- JPS632866A JPS632866A JP14303386A JP14303386A JPS632866A JP S632866 A JPS632866 A JP S632866A JP 14303386 A JP14303386 A JP 14303386A JP 14303386 A JP14303386 A JP 14303386A JP S632866 A JPS632866 A JP S632866A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- ceramics
- metal
- soldering
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims description 33
- 229910052751 metal Inorganic materials 0.000 title claims description 26
- 239000002184 metal Substances 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 23
- 238000005476 soldering Methods 0.000 title claims description 19
- 229910000838 Al alloy Inorganic materials 0.000 claims description 27
- 229910045601 alloy Inorganic materials 0.000 claims description 17
- 239000000956 alloy Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 229910000679 solder Inorganic materials 0.000 claims description 11
- 229910007570 Zn-Al Inorganic materials 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 3
- 229910021364 Al-Si alloy Inorganic materials 0.000 claims 5
- 239000011162 core material Substances 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 238000007747 plating Methods 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 229910000861 Mg alloy Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 3
- 239000011225 non-oxide ceramic Substances 0.000 description 3
- 229910052574 oxide ceramic Inorganic materials 0.000 description 3
- 239000011224 oxide ceramic Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はセラミックスと金属とのはんだ付け方法に係り
、特にセラミックスの表面処理を簡略化して金属とのは
んだ付けを実施したい電子部品や半導体部品などに使用
して好適なセラミックスと金属とのはんだ付け方法に関
する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for soldering ceramics and metals, and particularly to electronic components and semiconductor components in which it is desired to simplify the surface treatment of ceramics and perform soldering with metals. The present invention relates to a method of soldering ceramics and metals suitable for use in applications such as soldering between ceramics and metals.
セラミックスと金属とをはんだ付けする方法としては、
（１）Ｍ Ｏ−Ｍ ｎ法や硫化銅法で代表されるよう
に、セラミックス表面に金属粉末を焼きつけて（メタラ
イズ）、その後のはんだ付けを容易にするため、メタラ
イズ部にＮｉめつき更にＡｕめつきあるいはＣｒめっき
後に前述のＮｉめつき。As a method of soldering ceramics and metal,
(1) As typified by the M O-M n method and the copper sulfide method, metal powder is baked onto the ceramic surface (metallization), and in order to facilitate subsequent soldering, the metallized part is plated with Ni and then with Au. Ni plating mentioned above after plating or Cr plating.
ＡＬＩめっきを施して金属とはんだ付けする方法が知ら
れている。また、 （２）！ｆｆ開昭４？−１７６４２
号。A method is known in which ALI plating is applied and soldered to metal. Also, (2)! ff Kaisho 4? -17642
issue.
特開昭４７−２００４１号に記載のように、ガラスや酸
化物系セラミックスと金属とをｐｂ−３ｎを主成分とし
Ｚｎ、Ｓｂ、Ｓｉ、 Ｔｉ、 Ｂｅおよび稀土類の元素
を添加して成るはんだによシはんだ付けする方法がある
。As described in JP-A No. 47-20041, solder is made of glass or oxide ceramics and metal, with PB-3N as the main component and Zn, Sb, Si, Ti, Be, and rare earth elements added. There is a different way to solder.
上記従来技術は、前者は、セラミックス上にメタライズ
処理を施さなければならず、メタライズのだめの雰囲気
の厳密なコントロールやメタライズ後のめつき処理が必
要であると共に、工程の複雑さからの制約、メタライズ
面に気孔などの欠陥が生じ易い問題がある。また、後者
は、セラミックスの中でもガラスや酸化物系セラミック
スに限られるため１例えば炭化珪素（ＳｉＣ）、窒化珪
素（ＳｉｓＮｉ）などの非酸化物系セラミックスと金属
とのはんだ付けには問題がある。The former technique requires metallization treatment on ceramics, requires strict control of the atmosphere in the metallization chamber and plating treatment after metalization, and is also subject to constraints due to the complexity of the process. There is a problem that defects such as pores are likely to occur on the surface. Moreover, since the latter is limited to glass and oxide ceramics among ceramics, there is a problem in soldering non-oxide ceramics such as silicon carbide (SiC) and silicon nitride (SisNi) with metals.
本発明の目的は、従来技術の問題点を解消し。The object of the present invention is to overcome the problems of the prior art.
メタライズ処理及びめっき処理を省略でき、しかも非酸
化物系セラミックスも含めセラミックスと金属とのはん
だ付け方法を提供することにある。It is an object of the present invention to provide a method for soldering ceramics, including non-oxide ceramics, and metals, which can omit metallization treatment and plating treatment.
上記目的は、セラミックスの表面にＡｌあるいはＡｌ合
金、さらにＡｌあるいはＡｌ合金の面に２０あるいはＺ
ｎ−Ａｌ系合金を接合させることにより、達成される。The above purpose is to apply Al or Al alloy to the surface of ceramics, and to apply 20 or Z to the surface of Al or Al alloy.
This is achieved by joining n-Al alloys.
Ａｌ４るいはＡｌ合金は、各種セラミックス例えば＊
Ａ１２ｏ３＋ ＺｒＯｘなどの酸化物系セラミックスや
ＳｉＣ，Ｓｉ、Ｎ、などの非酸化物系セラミックスと接
合することができる。しかし、ＡｌやＡｌ合金は界面に
強固な酸化皮膜を形成するためＡｌやＡｌ合全面にはん
だ付けするのが非常に難しい。Al4 or Al alloy can be used in various ceramics such as *
It can be bonded to oxide ceramics such as A12o3+ ZrOx and non-oxide ceramics such as SiC, Si, and N. However, since Al and Al alloys form a strong oxide film on the interface, it is very difficult to solder to the surface of Al or Al alloys.
−方、Ｚｎ−？Ｚｎ−Ａｌ系合金が容易にはんだ付けす
ることができることを明らかにした。これによって、セ
ラミックスとＡｌ６るいばＡｌ合金との接合体のＡｌあ
るいはＡｌ合金の面にＺｎを含有した層を形成させるこ
ととした。それてよって、セラミックスと金属とを容易
にはんだ付けすることができるようになった。- way, Zn-? It was revealed that Zn-Al alloy can be easily soldered. As a result, a layer containing Zn was formed on the surface of the Al or Al alloy of the joined body of the ceramic and the Al6-Al alloy. This has made it possible to easily solder ceramics and metals.
以下、本発明の実施例を図面に従って説明する。 Embodiments of the present invention will be described below with reference to the drawings.
（その１）
ＳｉＣとＣｕとのはんだ付け例
第１図に示すように、ＳｉＣｇ円板１、Ａｌ合金を石板
、Ａｌ−８１−Ｍｇ合金を両表皮材とする三層の７−）
２．純Ａｌ３．Ｚｎ −Ａｌ合金４およびはんだ付けす
る相手金属としてＣｕ５をはんだ６によυ接合する構造
となる。この接合方法は第２図に示す手順で行う。まず
、（ａ）ＳｉＣ製円板１とシート２及び純Ａｌ３を真空
雰囲気下（２〜３Ｘ １０−′Ｔｏｒｒ以下）で接合温
度６０（ｌで１０分間加熱保持して接合し、次に、（ｂ
）大気中において、接合の完了した純Ａｌ３と７．ｎ−
Ａｌ合金４とをＺｎ−Ａ４合金の固相線以上例えば４０
０Ｃに加熱し純Ａｌ３にＺｎ−Ａｌ合金４を押し付けて
接合させる。その後冷却させ、（Ｃ）接合の完了したＺ
ｎ−Ａｌ合金４とＣｕ５とをはんだ６を用いてはんだ付
けを行う。５ｔｃｘと純Ａｌ３とをシート２により接合
する場合、約５８５０でシート２の両表皮材ｋｌ、
Ｓ ！ Ｍｇ合金は溶融状態となり、Ａｌ、Ｓｉは純
ＡｌはもちろんＳｉＣと接合する。また、この接合にお
いて接合圧力（０，１〜２ｋｇｆ／ｗ” ）を加えると
、なお−層接合性は向上する。−方、純Ａｌ３とＺ ｎ
−Ａ １合金４との接合の場合ｔＺｎ−Ａｚ合金の共
晶点が約３８２０にあるため、この温度以上に加熱する
とＺｎ−Ａｌ合金の一部あるいは全体が溶融状態となシ
。(Part 1) Example of soldering SiC and Cu As shown in Figure 1, a three-layer 7-) consisting of a SiCg disk 1, an Al alloy stone plate, and an Al-81-Mg alloy both skin materials.
2. Pure Al3. The structure is such that Zn-Al alloy 4 and Cu 5 as a mating metal to be soldered are joined by solder 6. This joining method is carried out in accordance with the procedure shown in FIG. First, (a) SiC disk 1, sheet 2, and pure Al3 are bonded by heating and holding at a bonding temperature of 60 (L) for 10 minutes in a vacuum atmosphere (2 to 3X 10-' Torr or less), and then ( b
) In the atmosphere, the bonded pure Al3 and 7. n-
Al alloy 4 and the solidus line of Zn-A4 alloy
The Zn--Al alloy 4 is heated to 0 C and pressed onto the pure Al 3 to join them. After that, it is cooled, and (C) Z with completed joining.
The n-Al alloy 4 and Cu 5 are soldered using solder 6. When 5tcx and pure Al3 are joined by sheet 2, both skin materials kl of sheet 2 are approximately 5850,
S! The Mg alloy becomes molten, and Al and Si join not only pure Al but also SiC. Furthermore, if a bonding pressure (0.1 to 2 kgf/w") is applied during this bonding, the layer bonding property is further improved. On the other hand, when pure Al3 and Zn
- In the case of joining with A1 alloy 4, the eutectic point of the tZn-Az alloy is approximately 3820, so if it is heated above this temperature, part or all of the Zn-Al alloy will be in a molten state.
純Ａｌ面に新たなＺ ｎ −Ａ Ｌ合金が形成される。A new Zn-AL alloy is formed on the pure Al surface.
このように、純Ａｌの表面にＺｎｔ含んだ７．ｎ−Ａｌ
合金が形成されると、はんだの溶融温度領域でＺｎ−Ａ
ｌ合金の酸化皮膜は容易に破壊され。In this way, 7. Znt was included on the surface of pure Al. n-Al
Once the alloy is formed, Zn-A in the solder melting temperature range
The oxide film on the l-alloy is easily destroyed.
はんだ付けが可能となる。ＳｉＣとＣｕとをはんだ付け
した際の各接合部断面組織を観察したところＳｉ ＣＫ
は熱応力による亀裂は認められず、この接合体によるＨ
ｅリーク試験では１０−”Ｔｏｒｒ−４／ｘ以下の気密
性があることも確認できた。Soldering becomes possible. When we observed the cross-sectional structure of each joint when SiC and Cu were soldered, we found that Si CK
No cracks due to thermal stress were observed, and H
In the e-leak test, it was confirmed that there was an airtightness of 10-''Torr-4/x or less.
（その２）
第２図（ｂ）で示１７た接合物をアルゴン雰囲気中（１
気圧）で、加熱温度６００Ｃ，加圧力２ｋｇｆ／ｊｏ１
２で１０分間加熱、加圧保持して同時に接合させ、冷却
後はんだによりセラミックスと金属とをはんだ付けした
。その結果、Ｈｅ１Ｊ−り試験において実施例（その１
）と同碌の気密性が得られていた。(Part 2) The bonded product shown in Fig. 2(b) was placed in an argon atmosphere (17
Atmospheric pressure), heating temperature 600C, pressing force 2kgf/jo1
2 for 10 minutes and held under pressure to bond them simultaneously, and after cooling, the ceramic and metal were soldered with solder. As a result, in the He1J-reduction test, Example (Part 1)
), the same level of airtightness was obtained.
本発明によれば、セラミックスとＡｌあるいはＡｌ合金
とを接合し、更にＡｌあるいはＡ を合金にＺｎあるい
はＺｎ−ＡＡ系合金に接合することにより、セラミック
スと金属とｔｌ−はんだ付けすることができるので次の
ような効果を達成できる。According to the present invention, ceramics and metal can be tl-soldered by joining ceramics and Al or Al alloy, and further joining Al or A to Zn or Zn-AA alloy. The following effects can be achieved:
（１） セラミックスと金属と全はんだ付けするまで
の工程で、処理温度を６６０Ｃ以下に下げることができ
、冷却中のセラミックスに発生する熱応力が小さくなシ
、セラミックスに亀裂が発生］−にくい。その結果、セ
ラミックスとＡｌ間の強度信頼性が向上する。また、安
価なｋｔを用いるので大幅な原価低減が図れる。(1) In the process of completely soldering the ceramic and metal, the processing temperature can be lowered to 660C or less, and the thermal stress generated in the ceramic during cooling is small, making it difficult for cracks to occur in the ceramic. As a result, the strength reliability between ceramics and Al is improved. Furthermore, since inexpensive kt is used, the cost can be significantly reduced.
（２）はんだ付け性を向上させるために行っていためっ
き処理を省略することができるので、大幅な工程数の削
減ができるとともに、原価低減にも太きく寄与する。(2) Since the plating process used to improve solderability can be omitted, the number of steps can be significantly reduced, and it also contributes greatly to cost reduction.
（３） 複雑なメタライズ処理を簡便なＡｌによる接
合とすることができるため、工程管理も容易になり工程
数も軽減できる。(3) Since complicated metallization processing can be replaced with simple bonding using Al, process control becomes easy and the number of steps can be reduced.
第１図は本発明の一実施例の構成部材の縦断面図、第２
図は第１図を構成するまでの工程ごとの構成部材縦断面
図である。
ｌ・・・ＳｉＣ円板、２・・・Ａｌ−８１−Ｍｇ合金シ
ート。
３・・・純Ａｌ板、４・・・Ｚｎ−Ａｌ合金板、５・・
・Ｃｕ円板、６・・・はんだ。FIG. 1 is a vertical cross-sectional view of the constituent members of one embodiment of the present invention, and FIG.
The figures are vertical cross-sectional views of the constituent parts for each step up to the construction of FIG. 1. 1...SiC disk, 2...Al-81-Mg alloy sheet. 3...Pure Al plate, 4...Zn-Al alloy plate, 5...
-Cu disk, 6... solder.
Claims (1)
セラミックスにあらかじめＡｌあるいはＡｌ合金を加熱
して接合し、更にＡｌあるいはＡｌ合金の面にＺｎある
いはＺｎ−Ａｌ系合金を加熱して接合し、その後、金属
をはんだ付けすることを特徴とするセラミックスと金属
とのはんだ付け方法。 ２、特許請求の範囲第１項において、前記Ａｌあるいは
Ａｌ合金をＡｌあるいはＡｌ合金の固相線以上の温度に
加熱してセラミックスとＡｌあるいはＡｌ合金とを接合
し、更にＺｎあるいはＺｎ−Ａｌ系合金の固相線以上の
温度に加熱してＡｌあるいはＡｌ合金とＺｎあるいはＺ
ｎ−Ａｌ系合金とを接合してから金属をはんだ付けする
ことを特徴とするセラミックスと金属とのはんだ付け方
法。 ３、特許請求の範囲第１項又は第２項の方法において、
前記Ａｌ合金としてＡｌ−Ｓｉ合金からなるシートある
いは粉末を用いることを特徴とするセラミックスと金属
とのはんだ付け方法。 ４、特許請求の範囲第１項又は第２項の方法において、
前記Ａｌ合金として、純ＡｌあるいはＡｌ合金を心板と
しＡｌ−Ｓｉ合金を両表皮材とするシートを用いること
を特徴とするセラミックスと金属とのはんだ付け方法。 ５、特許請求の範囲第４項において、前記シートとして
、純ＡｌあるいはＡｌ合金の表面にＡｌ−Ｓｉ合金粉末
を塗布あるいは溶射してシートとして用いることを特徴
とするセラミックスと金属とのはんだ付け方法。 ６、特許請求の範囲第４項又は第５項において、前記心
材の一方の面にＡｌ−Ｓｉ合金を表皮材とし、セラミッ
クスとＡｌ−Ｓｉ合金表皮材とを接合することを特徴と
するセラミックスと金属とのはんだ付け方法。 ７、特許請求の範囲第１項又は第２項の方法において、
セラミックス、ＡｌあるいはＡｌ合金及びＺｎあるいは
Ｚｎ−Ａｌ系合金を組合せ、ＡｌあるいはＡｌ合金かＺ
ｎあるいはＺｎ−Ａｌ系合金のどちらか固相線温度の高
い方の温度以上に加熱して接合することを特徴とするセ
ラミックスと金属とのはんだ付け方法。[Claims] 1. A method for soldering ceramics and metal, comprising:
Ceramics characterized in that Al or Al alloy is heated and bonded to ceramics in advance, Zn or Zn-Al alloy is further heated and bonded to the surface of Al or Al alloy, and then metal is soldered. How to solder with metal. 2. Claim 1, wherein the ceramic and the Al or Al alloy are bonded by heating the Al or Al alloy to a temperature higher than the solidus line of the Al or Al alloy, and further the Zn or Zn-Al alloy is Al or Al alloy and Zn or Z are heated to a temperature above the solidus line of the alloy.
A method for soldering ceramics and metal, which comprises joining an n-Al alloy and then soldering the metal. 3. In the method according to claim 1 or 2,
A method for soldering ceramics and metal, characterized in that a sheet or powder made of an Al-Si alloy is used as the Al alloy. 4. In the method according to claim 1 or 2,
A method for soldering ceramics and metal, characterized in that the Al alloy is a sheet having a core made of pure Al or an Al alloy and both skin materials made of Al-Si alloy. 5. A method for soldering ceramics and metal according to claim 4, characterized in that the sheet is used as a sheet by coating or spraying Al-Si alloy powder on the surface of pure Al or an Al alloy. . 6. A ceramic according to claim 4 or 5, characterized in that an Al-Si alloy is used as a skin material on one surface of the core material, and the ceramic and the Al-Si alloy skin material are bonded. How to solder with metal. 7. In the method according to claim 1 or 2,
A combination of ceramics, Al or Al alloy and Zn or Zn-Al alloy, Al or Al alloy or Z
1. A method for soldering ceramics and metals, characterized in that they are joined by heating to a temperature higher than the solidus temperature of either Zn or Zn-Al alloy, whichever has a higher solidus temperature.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14303386A JPS632866A (en) | 1986-06-20 | 1986-06-20 | Method of soldering ceramic to metal |
| US07/063,419 US4854495A (en) | 1986-06-20 | 1987-06-18 | Sealing structure, method of soldering and process for preparing sealing structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14303386A JPS632866A (en) | 1986-06-20 | 1986-06-20 | Method of soldering ceramic to metal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS632866A true JPS632866A (en) | 1988-01-07 |
Family
ID=15329346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14303386A Pending JPS632866A (en) | 1986-06-20 | 1986-06-20 | Method of soldering ceramic to metal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS632866A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6015379A (en) * | 1983-07-04 | 1985-01-26 | 株式会社日立製作所 | Controller for elevator |
-
1986
- 1986-06-20 JP JP14303386A patent/JPS632866A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6015379A (en) * | 1983-07-04 | 1985-01-26 | 株式会社日立製作所 | Controller for elevator |
| JPH0122198B2 (en) * | 1983-07-04 | 1989-04-25 | Hitachi Seisakusho Kk |
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