JP2006165529A5

JP2006165529A5 -

Info

Publication number: JP2006165529A5
Application number: JP2005325366A
Authority: JP
Filing date: 2005-11-09
Publication date: 2008-02-07
Anticipated expiration: 2025-11-09

Description

本発明の第４の骨子は、非晶質酸化物であって、
前記非晶質酸化物は膜厚方向に組成が変化しており、且つ、
前記非晶質酸化物は、
電子キャリア濃度が１０^１８／ｃｍ^３未満である、
ことを特徴とする。 The fourth aspect of the present invention is an amorphous oxide,
Wherein the amorphous oxide is changing in composition to the film thickness direction, and,
The amorphous oxide is
The electron carrier concentration is less than 10 ¹⁸ / cm ³ ;
It is characterized by that.

本発明の第５の骨子は、電界効果型トランジスタであって、
膜厚方向に組成が変化している非晶質酸化物を含む活性層と、
前記活性層に対してゲート絶縁膜を介して設けられたゲート電極と、
を具備し、
前記活性層は、第１の領域と該第１の領域よりも前記ゲート絶縁膜に近い第２の領域とを含み、
前記第２の領域の酸素濃度が、前記第１の領域の酸素濃度より高いことを特徴とする。
The fifth essence of the present invention is a field effect transistor,
An active layer containing an amorphous oxide in composition in the film thickness direction is changed,
A gate electrode provided on the active layer via a gate insulating film;
Comprising
The active layer includes a first region and a second region closer to the gate insulating film than the first region,
The oxygen concentration in the second region is higher than the oxygen concentration in the first region.

Claims

An amorphous oxide,
The amorphous oxide contains microcrystals and has an electron carrier concentration of less than 10 ¹⁸ / cm ³ .

The amorphous oxide according to claim 1, wherein the amorphous oxide is an oxide containing at least one of In, Zn, and Sn.

2. The amorphous oxide is any one of an oxide containing In, Zn, and Sn, an oxide containing In and Zn, an oxide containing In and Sn, and an oxide containing In. The amorphous oxide described.

The amorphous oxide according to claim 1, wherein the amorphous oxide is an oxide containing In, Ga, and Zn.

An amorphous oxide,
The amorphous oxide includes microcrystals, and exhibits an tendency to increase electron mobility as the electron carrier concentration increases.

A field effect transistor,
An active layer having an amorphous oxide containing microcrystals;
A gate electrode provided on the active layer via a gate insulating film;
A field effect transistor comprising:

The field effect transistor according to claim 6, wherein the field effect transistor is a normally-off transistor.

An amorphous oxide,
Wherein the amorphous oxide is changing in composition to the film thickness direction, and,
The amorphous oxide has an electron carrier concentration of less than 10 ¹⁸ / cm ³ .

The amorphous oxide according to claim 8, wherein the amorphous oxide is an oxide containing at least one of In, Zn, and Sn.

9. The amorphous oxide is any one of an oxide containing In, Zn, and Sn, an oxide containing In and Zn, an oxide containing In and Sn, and an oxide containing In. The amorphous oxide described.

The amorphous oxide according to claim 8, wherein the amorphous oxide is an oxide containing In, Ga, and Zn.

A field effect transistor,
An active layer containing an amorphous oxide in composition in the film thickness direction is changed,
A gate electrode provided on the active layer via a gate insulating film;
Comprising
The active layer includes a first region and a second region closer to the gate insulating film than the first region,
2. The field effect transistor according to claim 1, wherein the oxygen concentration in the second region is higher than the oxygen concentration in the first region.

A field effect transistor,
An active layer containing an amorphous oxide having at least one of In or Zn;
A gate electrode provided on the active layer via a gate insulating film;
Comprising
The active layer includes a first region and a second region closer to the gate insulating film than the first region,
A field effect transistor, wherein an In concentration or a Zn concentration in the second region is higher than an In concentration or a Zn concentration in the first region.

An amorphous oxide,
The amorphous oxide has a composition changing in the film thickness direction, and
The amorphous oxide is characterized in that the electron carrier concentration increases and the electron mobility tends to increase.

A field effect transistor,
An active layer comprising an amorphous oxide comprising In and Zn;
A gate electrode provided on the active layer via a gate insulating film;
Comprising
The active layer includes a first region and a second region closer to the gate insulating film than the first region,
A field effect characterized in that the In concentration of the second region is higher than the In concentration of the first region, or the Zn concentration of the second region is higher than the Zn concentration of the first region. Type transistor.

An amorphous oxide,
The electron carrier concentration of the amorphous oxide is less than 10 ¹⁸ / cm ³ , and the amorphous oxide is Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, An amorphous oxide comprising one or more elements selected from V, Ru, Ge, Sn, and F.

The amorphous oxide according to claim 16, wherein the amorphous oxide is an oxide containing at least one of In, Zn, and Sn.

The amorphous oxide is one of an oxide containing In, Zn, and Sn, an oxide containing In and Zn, an oxide containing In and Sn, or an oxide containing In. Amorphous oxide.

The amorphous oxide according to claim 16, wherein the amorphous oxide is an oxide containing In, Zn, and Ga.

An amorphous oxide,
The amorphous oxide is
As the electron carrier concentration increases, the electron mobility tends to increase, and
Amorphous comprising at least one element selected from Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, V, Ru, Ge, Sn, F Oxide.

A field effect transistor,
It has an amorphous oxide containing at least one element selected from Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, V, Ru, Ge, Sn, and F An active layer,
A gate electrode provided on the active layer via a gate insulating film;
A field effect transistor comprising: