JP2007052419A - 薄膜トランジスタ表示板及びこれを含む液晶表示装置 - Google Patents

薄膜トランジスタ表示板及びこれを含む液晶表示装置 Download PDF

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Publication number
JP2007052419A
JP2007052419A JP2006217219A JP2006217219A JP2007052419A JP 2007052419 A JP2007052419 A JP 2007052419A JP 2006217219 A JP2006217219 A JP 2006217219A JP 2006217219 A JP2006217219 A JP 2006217219A JP 2007052419 A JP2007052419 A JP 2007052419A
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JP
Japan
Prior art keywords
gate
thin film
film transistor
liquid crystal
data line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006217219A
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English (en)
Japanese (ja)
Other versions
JP2007052419A5 (enExample
Inventor
Hyeong-Jun Park
亨 俊 朴
Kyung-Wook Kim
景 旭 金
Heisai An
炳 宰 安
Hoshun Lee
奉 俊 李
Yeon-Kyu Moon
然 奎 文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2007052419A publication Critical patent/JP2007052419A/ja
Publication of JP2007052419A5 publication Critical patent/JP2007052419A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2006217219A 2005-08-12 2006-08-09 薄膜トランジスタ表示板及びこれを含む液晶表示装置 Pending JP2007052419A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050074454A KR20070019457A (ko) 2005-08-12 2005-08-12 박막 트랜지스터 표시판 및 이를 포함하는 액정표시장치

Publications (2)

Publication Number Publication Date
JP2007052419A true JP2007052419A (ja) 2007-03-01
JP2007052419A5 JP2007052419A5 (enExample) 2009-06-25

Family

ID=37741797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006217219A Pending JP2007052419A (ja) 2005-08-12 2006-08-09 薄膜トランジスタ表示板及びこれを含む液晶表示装置

Country Status (3)

Country Link
US (1) US7522226B2 (enExample)
JP (1) JP2007052419A (enExample)
KR (1) KR20070019457A (enExample)

Families Citing this family (32)

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US8901268B2 (en) * 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
KR20070019457A (ko) * 2005-08-12 2007-02-15 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정표시장치
KR20070075808A (ko) * 2006-01-16 2007-07-24 삼성전자주식회사 표시 기판의 제조 방법 및 이를 이용하여 제조한 표시 기판
JP5303119B2 (ja) * 2007-06-05 2013-10-02 株式会社ジャパンディスプレイ 半導体装置
US20080308819A1 (en) * 2007-06-15 2008-12-18 Tpo Displays Corp. Light-Emitting Diode Arrays and Methods of Manufacture
WO2009093462A1 (ja) * 2008-01-25 2009-07-30 Sharp Kabushiki Kaisha 半導体素子およびその製造方法
CN101939694B (zh) 2008-02-27 2014-01-29 株式会社半导体能源研究所 液晶显示器件及其制造方法以及电子装置
US8101442B2 (en) * 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
US20100020257A1 (en) * 2008-07-23 2010-01-28 Samsung Electronics Co., Ltd. Liquid crystal display device and manufacturing method thereof
TW201039034A (en) * 2009-04-27 2010-11-01 Chunghwa Picture Tubes Ltd Pixel structure and the method of forming the same
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
KR20110001292A (ko) * 2009-06-30 2011-01-06 삼성전자주식회사 패턴 구조물 및 이의 형성 방법
WO2011037102A1 (ja) * 2009-09-28 2011-03-31 凸版印刷株式会社 アクティブマトリクス基板及びその製造方法並びに画像表示装置
KR101717933B1 (ko) 2010-04-14 2017-03-21 삼성디스플레이 주식회사 표시기판 및 그 제조방법
US8829517B2 (en) * 2010-07-21 2014-09-09 Sharp Kabushiki Kaisha Substrate, method for fabricating the same, and display device
US8558960B2 (en) * 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
CN102646634B (zh) * 2011-04-29 2013-06-12 京东方科技集团股份有限公司 Tft-lcd阵列基板制造方法
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US8988624B2 (en) * 2011-06-23 2015-03-24 Apple Inc. Display pixel having oxide thin-film transistor (TFT) with reduced loading
US9470941B2 (en) 2011-08-19 2016-10-18 Apple Inc. In-cell or on-cell touch sensor with color filter on array
CN202404339U (zh) * 2012-01-12 2012-08-29 京东方科技集团股份有限公司 阵列基板及包括该阵列基板的显示装置
KR101882297B1 (ko) * 2012-02-03 2018-07-30 삼성디스플레이 주식회사 화소 및 이를 이용한 유기전계발광 표시장치
TWI505000B (zh) * 2013-02-19 2015-10-21 Innolux Corp 液晶面板
CN105051596B (zh) 2013-03-27 2019-01-29 株式会社半导体能源研究所 显示装置以及电子设备
JP6278633B2 (ja) * 2013-07-26 2018-02-14 三菱電機株式会社 薄膜トランジスタアレイ基板およびその製造方法、並びに、液晶表示装置およびその製造方法
TWI642170B (zh) 2013-10-18 2018-11-21 半導體能源研究所股份有限公司 顯示裝置及電子裝置
KR101669060B1 (ko) * 2014-05-02 2016-11-10 엘지디스플레이 주식회사 표시장치 및 이를 제조하는 방법
CN104656333A (zh) * 2015-03-18 2015-05-27 深圳市华星光电技术有限公司 Coa型液晶面板的制作方法及coa型液晶面板
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
KR102374537B1 (ko) * 2015-08-21 2022-03-15 삼성디스플레이 주식회사 표시 장치
KR102706584B1 (ko) 2016-11-22 2024-09-19 삼성디스플레이 주식회사 표시 장치용 백플레인 및 이의 제조 방법
KR102473303B1 (ko) 2018-01-24 2022-12-05 삼성디스플레이 주식회사 표시 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794753A (ja) * 1993-04-23 1995-04-07 Toshiba Corp 薄膜トランジスタおよびそれを用いた表示装置
JPH10221704A (ja) * 1997-02-07 1998-08-21 Sharp Corp 反射型液晶表示装置およびその製造方法
JP2001021916A (ja) * 1999-07-05 2001-01-26 Toshiba Corp マトリクスアレイ基板
JP2003347558A (ja) * 2002-05-23 2003-12-05 Lg Philips Lcd Co Ltd 液晶表示装置用アレイ基板及びその製造方法、並びに薄膜トランジスタ
JP2005164854A (ja) * 2003-12-01 2005-06-23 Nec Lcd Technologies Ltd 液晶表示装置

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Publication number Priority date Publication date Assignee Title
US7088323B2 (en) * 2000-12-21 2006-08-08 Lg.Philips Lcd Co., Ltd. Liquid crystal display device and method for fabricating the same
KR100456151B1 (ko) * 2002-04-17 2004-11-09 엘지.필립스 엘시디 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
KR20070019457A (ko) * 2005-08-12 2007-02-15 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정표시장치
KR101201972B1 (ko) * 2006-06-30 2012-11-15 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 이의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794753A (ja) * 1993-04-23 1995-04-07 Toshiba Corp 薄膜トランジスタおよびそれを用いた表示装置
JPH10221704A (ja) * 1997-02-07 1998-08-21 Sharp Corp 反射型液晶表示装置およびその製造方法
JP2001021916A (ja) * 1999-07-05 2001-01-26 Toshiba Corp マトリクスアレイ基板
JP2003347558A (ja) * 2002-05-23 2003-12-05 Lg Philips Lcd Co Ltd 液晶表示装置用アレイ基板及びその製造方法、並びに薄膜トランジスタ
JP2005164854A (ja) * 2003-12-01 2005-06-23 Nec Lcd Technologies Ltd 液晶表示装置

Also Published As

Publication number Publication date
US7522226B2 (en) 2009-04-21
KR20070019457A (ko) 2007-02-15
US20070034879A1 (en) 2007-02-15

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