KR20070019457A - 박막 트랜지스터 표시판 및 이를 포함하는 액정표시장치 - Google Patents

박막 트랜지스터 표시판 및 이를 포함하는 액정표시장치 Download PDF

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Publication number
KR20070019457A
KR20070019457A KR1020050074454A KR20050074454A KR20070019457A KR 20070019457 A KR20070019457 A KR 20070019457A KR 1020050074454 A KR1020050074454 A KR 1020050074454A KR 20050074454 A KR20050074454 A KR 20050074454A KR 20070019457 A KR20070019457 A KR 20070019457A
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KR
South Korea
Prior art keywords
gate
thin film
film transistor
liquid crystal
transistor array
Prior art date
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Ceased
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KR1020050074454A
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English (en)
Korean (ko)
Inventor
박형준
김경욱
안병재
이봉준
문연규
Original Assignee
삼성전자주식회사
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Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020050074454A priority Critical patent/KR20070019457A/ko
Priority to JP2006217219A priority patent/JP2007052419A/ja
Priority to US11/502,670 priority patent/US7522226B2/en
Publication of KR20070019457A publication Critical patent/KR20070019457A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
KR1020050074454A 2005-08-12 2005-08-12 박막 트랜지스터 표시판 및 이를 포함하는 액정표시장치 Ceased KR20070019457A (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020050074454A KR20070019457A (ko) 2005-08-12 2005-08-12 박막 트랜지스터 표시판 및 이를 포함하는 액정표시장치
JP2006217219A JP2007052419A (ja) 2005-08-12 2006-08-09 薄膜トランジスタ表示板及びこれを含む液晶表示装置
US11/502,670 US7522226B2 (en) 2005-08-12 2006-08-11 Liquid crystal display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050074454A KR20070019457A (ko) 2005-08-12 2005-08-12 박막 트랜지스터 표시판 및 이를 포함하는 액정표시장치

Publications (1)

Publication Number Publication Date
KR20070019457A true KR20070019457A (ko) 2007-02-15

Family

ID=37741797

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050074454A Ceased KR20070019457A (ko) 2005-08-12 2005-08-12 박막 트랜지스터 표시판 및 이를 포함하는 액정표시장치

Country Status (3)

Country Link
US (1) US7522226B2 (enExample)
JP (1) JP2007052419A (enExample)
KR (1) KR20070019457A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130090088A (ko) * 2012-02-03 2013-08-13 삼성디스플레이 주식회사 화소 및 이를 이용한 유기전계발광 표시장치
KR101481221B1 (ko) * 2011-06-23 2015-01-09 애플 인크. 감소된 부하를 갖는 산화물 박막 트랜지스터(ｔｆｔ)를 구비한 디스플레이 픽셀
US10684521B2 (en) 2018-01-24 2020-06-16 Samsung Display Co., Ltd. Display device

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US8901268B2 (en) * 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
KR20070019457A (ko) * 2005-08-12 2007-02-15 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정표시장치
KR20070075808A (ko) * 2006-01-16 2007-07-24 삼성전자주식회사 표시 기판의 제조 방법 및 이를 이용하여 제조한 표시 기판
JP5303119B2 (ja) * 2007-06-05 2013-10-02 株式会社ジャパンディスプレイ 半導体装置
US20080308819A1 (en) * 2007-06-15 2008-12-18 Tpo Displays Corp. Light-Emitting Diode Arrays and Methods of Manufacture
WO2009093462A1 (ja) * 2008-01-25 2009-07-30 Sharp Kabushiki Kaisha 半導体素子およびその製造方法
CN101939694B (zh) * 2008-02-27 2014-01-29 株式会社半导体能源研究所 液晶显示器件及其制造方法以及电子装置
US8101442B2 (en) * 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
US20100020257A1 (en) * 2008-07-23 2010-01-28 Samsung Electronics Co., Ltd. Liquid crystal display device and manufacturing method thereof
TW201039034A (en) * 2009-04-27 2010-11-01 Chunghwa Picture Tubes Ltd Pixel structure and the method of forming the same
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
KR20110001292A (ko) 2009-06-30 2011-01-06 삼성전자주식회사 패턴 구조물 및 이의 형성 방법
CN102576507B (zh) * 2009-09-28 2015-08-05 凸版印刷株式会社 有源矩阵基板及其制造方法和图像显示装置
KR101717933B1 (ko) 2010-04-14 2017-03-21 삼성디스플레이 주식회사 표시기판 및 그 제조방법
JP5275517B2 (ja) * 2010-07-21 2013-08-28 シャープ株式会社 基板及びその製造方法、表示装置
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
CN102646634B (zh) * 2011-04-29 2013-06-12 京东方科技集团股份有限公司 Tft-lcd阵列基板制造方法
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9470941B2 (en) 2011-08-19 2016-10-18 Apple Inc. In-cell or on-cell touch sensor with color filter on array
CN202404339U (zh) * 2012-01-12 2012-08-29 京东方科技集团股份有限公司 阵列基板及包括该阵列基板的显示装置
TWI505000B (zh) * 2013-02-19 2015-10-21 Innolux Corp 液晶面板
CN105051596B (zh) 2013-03-27 2019-01-29 株式会社半导体能源研究所 显示装置以及电子设备
JP6278633B2 (ja) * 2013-07-26 2018-02-14 三菱電機株式会社 薄膜トランジスタアレイ基板およびその製造方法、並びに、液晶表示装置およびその製造方法
TWI642170B (zh) 2013-10-18 2018-11-21 半導體能源研究所股份有限公司 顯示裝置及電子裝置
KR101669060B1 (ko) * 2014-05-02 2016-11-10 엘지디스플레이 주식회사 표시장치 및 이를 제조하는 방법
CN104656333A (zh) * 2015-03-18 2015-05-27 深圳市华星光电技术有限公司 Coa型液晶面板的制作方法及coa型液晶面板
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
KR102374537B1 (ko) * 2015-08-21 2022-03-15 삼성디스플레이 주식회사 표시 장치
KR102706584B1 (ko) 2016-11-22 2024-09-19 삼성디스플레이 주식회사 표시 장치용 백플레인 및 이의 제조 방법

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JP3512849B2 (ja) * 1993-04-23 2004-03-31 株式会社東芝 薄膜トランジスタおよびそれを用いた表示装置
JPH10221704A (ja) * 1997-02-07 1998-08-21 Sharp Corp 反射型液晶表示装置およびその製造方法
JP2001021916A (ja) * 1999-07-05 2001-01-26 Toshiba Corp マトリクスアレイ基板
US7088323B2 (en) * 2000-12-21 2006-08-08 Lg.Philips Lcd Co., Ltd. Liquid crystal display device and method for fabricating the same
KR100456151B1 (ko) * 2002-04-17 2004-11-09 엘지.필립스 엘시디 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
KR100491821B1 (ko) * 2002-05-23 2005-05-27 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
JP2005164854A (ja) * 2003-12-01 2005-06-23 Nec Lcd Technologies Ltd 液晶表示装置
KR20070019457A (ko) * 2005-08-12 2007-02-15 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정표시장치
KR101201972B1 (ko) * 2006-06-30 2012-11-15 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 이의 제조 방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101481221B1 (ko) * 2011-06-23 2015-01-09 애플 인크. 감소된 부하를 갖는 산화물 박막 트랜지스터(ｔｆｔ)를 구비한 디스플레이 픽셀
KR20130090088A (ko) * 2012-02-03 2013-08-13 삼성디스플레이 주식회사 화소 및 이를 이용한 유기전계발광 표시장치
US10684521B2 (en) 2018-01-24 2020-06-16 Samsung Display Co., Ltd. Display device

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Publication number Publication date
US20070034879A1 (en) 2007-02-15
JP2007052419A (ja) 2007-03-01
US7522226B2 (en) 2009-04-21

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