JP2007027179A - 放射線画像検出器 - Google Patents
放射線画像検出器 Download PDFInfo
- Publication number
- JP2007027179A JP2007027179A JP2005202837A JP2005202837A JP2007027179A JP 2007027179 A JP2007027179 A JP 2007027179A JP 2005202837 A JP2005202837 A JP 2005202837A JP 2005202837 A JP2005202837 A JP 2005202837A JP 2007027179 A JP2007027179 A JP 2007027179A
- Authority
- JP
- Japan
- Prior art keywords
- linear
- electrode
- image detector
- charge
- radiation image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 65
- 238000001514 detection method Methods 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XXKRKYCPIGXMAM-UHFFFAOYSA-N 1-methyl-3-(2-phenylphenyl)benzene Chemical compound CC1=CC=CC(C=2C(=CC=CC=2)C=2C=CC=CC=2)=C1 XXKRKYCPIGXMAM-UHFFFAOYSA-N 0.000 description 1
- 239000004985 Discotic Liquid Crystal Substance Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910018110 Se—Te Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- YRZZLAGRKZIJJI-UHFFFAOYSA-N oxyvanadium phthalocyanine Chemical compound [V+2]=O.C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 YRZZLAGRKZIJJI-UHFFFAOYSA-N 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000002601 radiography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Toxicology (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】 第2の電極層5の周縁部に、第2の線状電極5bが接続される接地パターン20を第1の線状電極5aおよび第2の線状電極5bを囲むように形成する。
【選択図】 図2
Description
2 記録用光導電層(電荷発生層)
3 電荷輸送層
4 読取用光導電層
5 第2の電極層
6 蓄電部
5a 第1の線状電極
5b 第2の線状電極
10,40 放射線画像検出器
30 チャージアンプIC
Claims (4)
- 放射線画像を担持した記録用の電磁波の照射を受けて電荷を発生する電荷発生層と、該電荷発生層において発生した電荷を電気信号として検出する検出部に接続される多数の第1の線状電極および接地される多数の第2の線状電極とが所定の間隔を空けて平行に交互に配列された電極層とをこの順に積層してなる放射線画像検出器において、
前記電極層の周縁部に形成された接地パターンを有し、
前記第2の線状電極が前記接地パターンに接続されていることを特徴とする放射線画像検出器。 - 前記接地パターンが前記第1の線状電極および前記第2の線状電極を囲むように形成されていることを特徴とする請求項1記載の放射線画像検出器。
- 互いに隣接する所定の複数本の第2の線状電極からなる複数の線状電極列が、隣接する前記線状電極列が互いに反対側の端部で前記接地パターンに接続されるように形成されていることを特徴とする請求項1または2記載の放射線画像検出器。
- 前記検出部がチャージアンプICであり、
前記接地パターンが前記チャージアンプICの接地端子が接続されるアンプ接地部を有するものであることを特徴とする請求項1から3いずれか1項記載の放射線画像検出器。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005202837A JP2007027179A (ja) | 2005-07-12 | 2005-07-12 | 放射線画像検出器 |
EP06014454A EP1744367A3 (en) | 2005-07-12 | 2006-07-12 | Radiation image detector |
US11/484,618 US20080006787A1 (en) | 2005-07-12 | 2006-07-12 | Radiation image detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005202837A JP2007027179A (ja) | 2005-07-12 | 2005-07-12 | 放射線画像検出器 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007027179A true JP2007027179A (ja) | 2007-02-01 |
Family
ID=37076086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005202837A Abandoned JP2007027179A (ja) | 2005-07-12 | 2005-07-12 | 放射線画像検出器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20080006787A1 (ja) |
EP (1) | EP1744367A3 (ja) |
JP (1) | JP2007027179A (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03183158A (ja) * | 1989-12-12 | 1991-08-09 | Mitsubishi Electric Corp | 入出力バツフア回路 |
JP2003028964A (ja) * | 2001-05-11 | 2003-01-29 | Fuji Photo Film Co Ltd | 画像記録方法および装置並びに画像記録媒体 |
JP2003115542A (ja) * | 2001-07-02 | 2003-04-18 | Nec Corp | マクロセルを有する半導体集積回路、及びその設計方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2646516A1 (fr) * | 1989-04-28 | 1990-11-02 | Cgr Mev | Detecteurs a photoconducteur de rayonnement ionisant et procedes de mise en oeuvre |
GB2318448B (en) * | 1996-10-18 | 2002-01-16 | Simage Oy | Imaging detector and method of production |
JP4040201B2 (ja) * | 1999-03-30 | 2008-01-30 | 富士フイルム株式会社 | 放射線固体検出器、並びにそれを用いた放射線画像記録/読取方法および装置 |
US6590224B2 (en) * | 2000-03-22 | 2003-07-08 | Fuji Photo Film Co., Ltd. | Image storage medium and method of manufacturing the same |
EP1262797B1 (en) * | 2001-05-11 | 2011-07-13 | FUJIFILM Corporation | Method and apparatus for image recording and image recording medium |
JP3932857B2 (ja) * | 2001-10-22 | 2007-06-20 | 株式会社島津製作所 | 放射線検出装置 |
JP2004342691A (ja) * | 2003-05-13 | 2004-12-02 | Fuji Photo Film Co Ltd | 放射線画像検出器 |
JP2004363463A (ja) * | 2003-06-06 | 2004-12-24 | Fuji Photo Film Co Ltd | 放射線画像検出器 |
JP2005183671A (ja) * | 2003-12-19 | 2005-07-07 | Fuji Photo Film Co Ltd | 放射線画像検出器 |
-
2005
- 2005-07-12 JP JP2005202837A patent/JP2007027179A/ja not_active Abandoned
-
2006
- 2006-07-12 EP EP06014454A patent/EP1744367A3/en not_active Withdrawn
- 2006-07-12 US US11/484,618 patent/US20080006787A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03183158A (ja) * | 1989-12-12 | 1991-08-09 | Mitsubishi Electric Corp | 入出力バツフア回路 |
JP2003028964A (ja) * | 2001-05-11 | 2003-01-29 | Fuji Photo Film Co Ltd | 画像記録方法および装置並びに画像記録媒体 |
JP2003115542A (ja) * | 2001-07-02 | 2003-04-18 | Nec Corp | マクロセルを有する半導体集積回路、及びその設計方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1744367A3 (en) | 2010-07-07 |
US20080006787A1 (en) | 2008-01-10 |
EP1744367A2 (en) | 2007-01-17 |
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