JP2007019468A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 238000005530 etching Methods 0.000 claims abstract description 34
- 230000003647 oxidation Effects 0.000 claims description 82
- 238000000034 method Methods 0.000 claims description 34
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 8
- 229910001882 dioxygen Inorganic materials 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 44
- 229910052710 silicon Inorganic materials 0.000 abstract description 44
- 239000010703 silicon Substances 0.000 abstract description 44
- 238000002955 isolation Methods 0.000 description 19
- 150000004767 nitrides Chemical class 0.000 description 16
- 239000012535 impurity Substances 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 7
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
- H01L21/76235—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】半導体装置の製造方法は、シリコン基板11の表面にマスク14を形成する工程と、マスク14を用いて第1の異方性エッチングを行い、シリコン基板11の表面にトレンチ15を形成する工程と、基板温度が1000℃以上の熱酸化によって、トレンチ15の表面に第1の内壁酸化膜16を形成する工程と、第1の内壁酸化膜16を除去する工程と、マスク14を用いて第2の異方性エッチングを行い、トレンチ15の底部及びその近傍を拡張する工程とを有する。
【選択図】図2
Description
前記半導体基板の表面にマスクパターンを形成する工程と、
前記マスクパターンを用いて第1の異方性エッチングを行い、前記半導体基板の表面にトレンチを形成する工程と、
基板温度が1000℃以上の熱酸化によって、前記トレンチの表面に第1の内壁酸化膜を形成する工程と、
前記トレンチの表面の前記第1の内壁酸化膜を除去する工程と、
前記マスクパターンを用いて第2の異方性エッチングを行い、少なくとも前記トレンチの底部を拡張する工程とを有することを特徴とする。
12:パッド酸化膜
13:パッド窒化膜
14:マスク
15:トレンチ
16:(第1の)内壁酸化膜
17:トレンチの上端部
18:(拡張前の)トレンチの下端部
19:ファセット
20:拡張後のトレンチの下端部
21:第2の内壁酸化膜
22:素子分離用絶縁材料
23:素子分離領域
24:ディボット
31:第1の内壁酸化膜の上面
32:拡張前のトレンチの表面
33:第1の内壁酸化膜の下面
34:トレンチの側壁上端を通って鉛直方向に延在する面
35:トレンチの側壁上端
36:拡張前のトレンチの側壁下端
41:保護酸化膜
42:窒化膜
43:レジストマスク
44:ハードマスク
45:トレンチ
46:第1の内壁酸化膜
47:第2の内壁酸化膜
48:ゲート酸化膜
49:ゲート電極材料
50:ゲート電極
51:ゲートスペーサ
52:側壁保護膜
53:不純物拡散層
54:層間絶縁膜
55:コンタクトホール
56:コンタクトプラグ
61:トレンチの上端部
62:トレンチの下端部
63:ファセット
64:ゲート長
Claims (8)
- 半導体基板の表面にトレンチを形成する半導体装置の製造方法であって、
前記半導体基板の表面にマスクパターンを形成する工程と、
前記マスクパターンを用いて第1の異方性エッチングを行い、前記半導体基板の表面にトレンチを形成する工程と、
基板温度が1000℃以上の熱酸化によって、前記トレンチの表面に第1の内壁酸化膜を形成する工程と、
前記トレンチの表面の前記第1の内壁酸化膜を除去する工程と、
前記マスクパターンを用いて第2の異方性エッチングを行い、少なくとも前記トレンチの底部を拡張する工程とを有することを特徴とする半導体装置の製造方法。 - 前記トレンチのテーパー角をθ、基板面からの深さをd、第1の内壁酸化膜の膜厚をtoxとすると、tox<2dsinθ/cos2θが成立する、請求項1に記載の半導体装置の製造方法。
- 前記第1の内壁酸化膜を形成する熱酸化では、酸化反応種として酸素ガス又は水蒸気を用いる、請求項1又は2に記載の半導体装置の製造方法。
- 前記トレンチの底部を拡張する工程に後続して、基板温度が1000℃未満の熱酸化によって、前記トレンチの表面に第2の内壁酸化膜を形成する工程を更に有する、請求項1〜3の何れか一に記載の半導体装置の製造方法。
- 前記第2の内壁酸化膜を形成する熱酸化では、酸化反応種として酸素ガス又は水蒸気を用いる、請求項4に記載の半導体装置の製造方法。
- 前記拡張されたトレンチの内部に絶縁膜を埋め込む工程を更に有する、請求項4又は5に記載の半導体装置の製造方法。
- 前記第2の内壁酸化膜を形成する工程に後続して、前記マスクパターン、前記半導体基板の表面に形成された第1の内壁酸化膜、及び、第2の内壁酸化膜を除去する工程と、基板温度が1000℃未満の熱酸化によって、前記トレンチの表面を含む半導体基板の表面に第3の内壁酸化膜を形成する工程と、前記拡張されたトレンチの内部を含み前記半導体基板の表面に導電膜を埋め込む工程とを更に有する、請求項1〜5の何れか一に記載の半導体装置の製造方法。
- 前記導電膜をパターニングしてゲート電極に形成する工程を更に有する、請求項7に記載の半導体装置の製造方法。
Priority Applications (2)
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JP2006116537A JP4221420B2 (ja) | 2005-06-06 | 2006-04-20 | 半導体装置の製造方法 |
US11/446,181 US20060276001A1 (en) | 2005-06-06 | 2006-06-05 | Method for manufacturing a semiconductor device having a STI structure |
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JP2005165370 | 2005-06-06 | ||
JP2006116537A JP4221420B2 (ja) | 2005-06-06 | 2006-04-20 | 半導体装置の製造方法 |
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JP2007019468A true JP2007019468A (ja) | 2007-01-25 |
JP4221420B2 JP4221420B2 (ja) | 2009-02-12 |
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JP2006116537A Expired - Fee Related JP4221420B2 (ja) | 2005-06-06 | 2006-04-20 | 半導体装置の製造方法 |
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JP (1) | JP4221420B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008305961A (ja) * | 2007-06-07 | 2008-12-18 | Elpida Memory Inc | 半導体装置及びその製造方法 |
JP2012235107A (ja) * | 2011-04-22 | 2012-11-29 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
US9660095B2 (en) | 2011-04-22 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100856315B1 (ko) * | 2007-06-22 | 2008-09-03 | 주식회사 동부하이텍 | 반도체 소자의 제조 방법 |
JP2011243638A (ja) * | 2010-05-14 | 2011-12-01 | Sharp Corp | 半導体装置の製造方法 |
US8835994B2 (en) | 2010-06-01 | 2014-09-16 | International Business Machines Corporation | Reduced corner leakage in SOI structure and method |
CN102005379B (zh) * | 2010-10-25 | 2015-08-19 | 上海华虹宏力半导体制造有限公司 | 提高沟槽栅顶角栅氧可靠性的方法 |
CN104733324B (zh) * | 2015-03-20 | 2017-06-09 | 电子科技大学 | 一种碳化硅器件的栅槽制作方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5536675A (en) * | 1993-12-30 | 1996-07-16 | Intel Corporation | Isolation structure formation for semiconductor circuit fabrication |
US5933748A (en) * | 1996-01-22 | 1999-08-03 | United Microelectronics Corp. | Shallow trench isolation process |
US5998835A (en) * | 1998-02-17 | 1999-12-07 | International Business Machines Corporation | High performance MOSFET device with raised source and drain |
TW395015B (en) * | 1998-08-18 | 2000-06-21 | United Microelectronics Corp | Method for aligning shallow trench isolation |
JP4221859B2 (ja) * | 1999-02-12 | 2009-02-12 | 株式会社デンソー | 半導体装置の製造方法 |
US6294423B1 (en) * | 2000-11-21 | 2001-09-25 | Infineon Technologies North America Corp. | Method for forming and filling isolation trenches |
US7078314B1 (en) * | 2003-04-03 | 2006-07-18 | Advanced Micro Devices, Inc. | Memory device having improved periphery and core isolation |
US7271060B2 (en) * | 2005-06-24 | 2007-09-18 | Micron Technology, Inc. | Semiconductor processing methods |
US7276768B2 (en) * | 2006-01-26 | 2007-10-02 | International Business Machines Corporation | Semiconductor structures for latch-up suppression and methods of forming such semiconductor structures |
-
2006
- 2006-04-20 JP JP2006116537A patent/JP4221420B2/ja not_active Expired - Fee Related
- 2006-06-05 US US11/446,181 patent/US20060276001A1/en not_active Abandoned
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008305961A (ja) * | 2007-06-07 | 2008-12-18 | Elpida Memory Inc | 半導体装置及びその製造方法 |
JP2012235107A (ja) * | 2011-04-22 | 2012-11-29 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
US9559193B2 (en) | 2011-04-22 | 2017-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9660095B2 (en) | 2011-04-22 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2017163163A (ja) * | 2011-04-22 | 2017-09-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10388799B2 (en) | 2011-04-22 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device |
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Publication number | Publication date |
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JP4221420B2 (ja) | 2009-02-12 |
US20060276001A1 (en) | 2006-12-07 |
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