JP2006520077A - 量子ドットを含むエレクトロルミネセントデバイス - Google Patents
量子ドットを含むエレクトロルミネセントデバイス Download PDFInfo
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- JP2006520077A JP2006520077A JP2006506656A JP2006506656A JP2006520077A JP 2006520077 A JP2006520077 A JP 2006520077A JP 2006506656 A JP2006506656 A JP 2006506656A JP 2006506656 A JP2006506656 A JP 2006506656A JP 2006520077 A JP2006520077 A JP 2006520077A
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- quantum dots
- electroluminescent device
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (7)
- 第1の電極及び第2の電極と、量子ドットを含む圧縮された光学層と、を備えるエレクトロルミネセントデバイスであって、前記圧縮された光学層が電界の影響を受けて発光するエレクトロルミネセントデバイス。
- 量子ドットが、より大きいバンドギャップをもつ無機筐体によって囲まれる半導体材料のコアを有することを特徴とする、請求項1に記載のエレクトロルミネセントデバイス。
- 前記無機筐体が半導体材料を有することを特徴とする、請求項2に記載のエレクトロルミネセントデバイス。
- 前記圧縮された光学層は、量子ドットが埋め込まれるマトリクス状の充填剤を有することを特徴とする、請求項1に記載のエレクトロルミネセントデバイス。
- 前記充填剤が、半導体材料の量子ドットの半導体材料又は半導体材料のコアをもつ量子ドットの半導体材料よりも大きいバンドギャップを示すことを特徴とする、請求項4に記載のエレクトロルミネセントデバイス。
- 前記充填剤及び前記無機筐体が、同じ半導体材料を有することを特徴とする、請求項5に記載のエレクトロルミネセントデバイス。
- 第1の電極及び第2の電極と、量子ドットを含む圧縮された光学層と、を備え、前記圧縮された光学層が電界の影響を受けて発光する、エレクトロルミネセントデバイスを製造する方法であって、充填剤の粒子が量子ドットより小さい粒径を呈して、充填剤の粒子及び量子ドットの層が生成され圧縮されることにより、前記圧縮された光学層が生成される方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03100601 | 2003-03-11 | ||
PCT/IB2004/050171 WO2004081141A1 (en) | 2003-03-11 | 2004-03-01 | Electroluminescent device with quantum dots |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006520077A true JP2006520077A (ja) | 2006-08-31 |
Family
ID=32981904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006506656A Pending JP2006520077A (ja) | 2003-03-11 | 2004-03-01 | 量子ドットを含むエレクトロルミネセントデバイス |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060170331A1 (ja) |
EP (1) | EP1603991A1 (ja) |
JP (1) | JP2006520077A (ja) |
CN (1) | CN100422286C (ja) |
WO (1) | WO2004081141A1 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008029730A1 (fr) * | 2006-09-08 | 2008-03-13 | Konica Minolta Medical & Graphic, Inc. | Microparticule fluorescente semiconductrice, agent de marquage fluorescent de biosubstance et procédé de bioanalyse |
JP2009221288A (ja) * | 2008-03-14 | 2009-10-01 | Konica Minolta Medical & Graphic Inc | コア・シェル型蛍光体微粒子の作製方法 |
JP2010535262A (ja) * | 2007-07-31 | 2010-11-18 | ナノコ テクノロジーズ リミテッド | ナノ粒子 |
JP2011502333A (ja) * | 2007-10-30 | 2011-01-20 | イーストマン コダック カンパニー | ブリンキングのない量子ドットを含む装置 |
US8043793B2 (en) | 2007-09-28 | 2011-10-25 | Dai Nippon Printing Co., Ltd. | Method for manufacturing electroluminescence element |
US8334527B2 (en) | 2007-09-28 | 2012-12-18 | Dai Nippon Printing Co., Ltd. | Electroluminescent device |
US8384064B2 (en) | 2007-09-28 | 2013-02-26 | Dai Nippon Printing Co., Ltd. | Electroluminescent device |
US8563968B2 (en) | 2007-09-28 | 2013-10-22 | Dai Nippon Printing Co., Ltd. | Electroluminescent device |
JP2016505212A (ja) * | 2012-10-25 | 2016-02-18 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | シリコーン内の量子ドット用pdms系リガンド |
US10035952B2 (en) | 2012-10-25 | 2018-07-31 | Lumileds Llc | PDMS-based ligands for quantum dots in silicones |
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WO2005101530A1 (en) * | 2004-04-19 | 2005-10-27 | Edward Sargent | Optically-regulated optical emission using colloidal quantum dot nanocrystals |
US7746681B2 (en) | 2005-01-07 | 2010-06-29 | Invisage Technologies, Inc. | Methods of making quantum dot films |
US7742322B2 (en) | 2005-01-07 | 2010-06-22 | Invisage Technologies, Inc. | Electronic and optoelectronic devices with quantum dot films |
US7773404B2 (en) | 2005-01-07 | 2010-08-10 | Invisage Technologies, Inc. | Quantum dot optical devices with enhanced gain and sensitivity and methods of making same |
TWI237314B (en) * | 2004-06-24 | 2005-08-01 | Ind Tech Res Inst | Doping method for forming quantum dots |
CA2519608A1 (en) | 2005-01-07 | 2006-07-07 | Edward Sargent | Quantum dot-polymer nanocomposite photodetectors and photovoltaics |
KR100730170B1 (ko) * | 2005-11-22 | 2007-06-19 | 삼성에스디아이 주식회사 | 플라즈마 디스플레이 패널 |
CN100415064C (zh) * | 2005-12-07 | 2008-08-27 | 华东师范大学 | 一种可降低量子点激发电压的复合薄膜制备方法 |
US8941299B2 (en) * | 2006-05-21 | 2015-01-27 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
US20080001538A1 (en) * | 2006-06-29 | 2008-01-03 | Cok Ronald S | Led device having improved light output |
JPWO2008013069A1 (ja) * | 2006-07-28 | 2009-12-17 | Hoya株式会社 | El素子 |
US8030664B2 (en) * | 2006-12-15 | 2011-10-04 | Samsung Led Co., Ltd. | Light emitting device |
KR101453082B1 (ko) * | 2007-06-15 | 2014-10-28 | 삼성전자주식회사 | 교류 구동형 양자점 전계발광소자 |
JP2009087782A (ja) * | 2007-09-28 | 2009-04-23 | Dainippon Printing Co Ltd | エレクトロルミネッセンス素子の製造方法 |
JP2009087781A (ja) * | 2007-09-28 | 2009-04-23 | Dainippon Printing Co Ltd | エレクトロルミネッセンス素子およびその製造方法 |
EP2180030A3 (en) | 2008-10-23 | 2010-10-06 | National Tsing Hua University | Organic light emitting diode with nano-dots and fabrication method thereof |
TWI422088B (zh) * | 2008-10-23 | 2014-01-01 | Nat Univ Tsing Hua | 具有奈米點之有機發光二極體及其製造方法 |
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JP5446056B2 (ja) | 2010-05-24 | 2014-03-19 | 株式会社村田製作所 | 発光素子、及び発光素子の製造方法、並びに表示装置 |
CN101937975A (zh) * | 2010-08-20 | 2011-01-05 | 电子科技大学 | 一种有机/无机复合发光二极管及其制备方法 |
WO2012089739A2 (de) | 2010-12-28 | 2012-07-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Informationsspeicher, optischer informationsträger, vorrichtung zum speichern von informationen in informationsspeicher, verwendung eines informationsspeichers als passives display und sensoranordung |
DE102011076535A1 (de) | 2011-05-26 | 2012-11-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Informationsspeicher, optischer informationsträger, vorrichtung zum speichern von informationen in informationsspeicher und verwendung eines informationsspeichers als passives display |
WO2012138410A1 (en) * | 2011-04-02 | 2012-10-11 | Qd Vision, Inc. | Device including quantum dots |
CN102916097B (zh) * | 2011-08-01 | 2017-08-18 | 潘才法 | 一种电致发光器件 |
WO2013078247A1 (en) | 2011-11-22 | 2013-05-30 | Qd Vision, Inc. | Methods of coating semiconductor nanocrystals, semiconductor nanocrystals, and products including same |
US10008631B2 (en) | 2011-11-22 | 2018-06-26 | Samsung Electronics Co., Ltd. | Coated semiconductor nanocrystals and products including same |
KR101960469B1 (ko) | 2012-02-05 | 2019-03-20 | 삼성전자주식회사 | 반도체 나노결정, 그의 제조 방법, 조성물 및 제품 |
US20150293025A1 (en) * | 2012-12-18 | 2015-10-15 | Toray Industries Inc. | Metal dot substrate and method of manufacturing metal dot substrate |
US9617472B2 (en) | 2013-03-15 | 2017-04-11 | Samsung Electronics Co., Ltd. | Semiconductor nanocrystals, a method for coating semiconductor nanocrystals, and products including same |
US9810578B2 (en) | 2015-03-06 | 2017-11-07 | Massachusetts Institute Of Technology | Systems, methods, and apparatus for radiation detection |
DE102015112438A1 (de) * | 2015-07-29 | 2017-02-02 | SMR Patents S.à.r.l. | Beleuchtungsvorrichtung zur optimierten Lichtverteilung |
CN105161579A (zh) * | 2015-08-17 | 2015-12-16 | 深圳市华星光电技术有限公司 | 掺杂金属的量子点及led器件和背光模组 |
KR101874187B1 (ko) * | 2016-08-24 | 2018-07-03 | 한양대학교 산학협력단 | 조건 반사 동작을 수행하는 신경 소자 및 이의 구동 방법 |
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US5614435A (en) * | 1994-10-27 | 1997-03-25 | The Regents Of The University Of California | Quantum dot fabrication process using strained epitaxial growth |
US6322901B1 (en) * | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
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US6737293B2 (en) * | 2001-02-07 | 2004-05-18 | Agfa-Gevaert | Manufacturing of a thin film inorganic light emitting diode |
EP1430549A2 (en) * | 2001-09-04 | 2004-06-23 | Koninklijke Philips Electronics N.V. | Electroluminescent device comprising quantum dots |
US6858888B2 (en) * | 2001-11-26 | 2005-02-22 | Wisconsin Alumni Research Foundation | Stress control of semiconductor microstructures for thin film growth |
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2004
- 2004-03-01 JP JP2006506656A patent/JP2006520077A/ja active Pending
- 2004-03-01 US US10/548,244 patent/US20060170331A1/en not_active Abandoned
- 2004-03-01 CN CNB2004800064686A patent/CN100422286C/zh not_active Expired - Fee Related
- 2004-03-01 EP EP04715998A patent/EP1603991A1/en not_active Withdrawn
- 2004-03-01 WO PCT/IB2004/050171 patent/WO2004081141A1/en active Application Filing
Patent Citations (1)
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JP2004047121A (ja) * | 2002-05-28 | 2004-02-12 | National Taiwan Univ | 発光ナノ粒子を有する発光ダイオード |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008029730A1 (fr) * | 2006-09-08 | 2008-03-13 | Konica Minolta Medical & Graphic, Inc. | Microparticule fluorescente semiconductrice, agent de marquage fluorescent de biosubstance et procédé de bioanalyse |
JPWO2008029730A1 (ja) * | 2006-09-08 | 2010-01-21 | コニカミノルタエムジー株式会社 | 半導体蛍光微粒子、生体物質蛍光標識剤及びバイオアッセイ法 |
JP2010535262A (ja) * | 2007-07-31 | 2010-11-18 | ナノコ テクノロジーズ リミテッド | ナノ粒子 |
US8043793B2 (en) | 2007-09-28 | 2011-10-25 | Dai Nippon Printing Co., Ltd. | Method for manufacturing electroluminescence element |
US8334527B2 (en) | 2007-09-28 | 2012-12-18 | Dai Nippon Printing Co., Ltd. | Electroluminescent device |
US8384064B2 (en) | 2007-09-28 | 2013-02-26 | Dai Nippon Printing Co., Ltd. | Electroluminescent device |
US8563968B2 (en) | 2007-09-28 | 2013-10-22 | Dai Nippon Printing Co., Ltd. | Electroluminescent device |
JP2011502333A (ja) * | 2007-10-30 | 2011-01-20 | イーストマン コダック カンパニー | ブリンキングのない量子ドットを含む装置 |
JP2009221288A (ja) * | 2008-03-14 | 2009-10-01 | Konica Minolta Medical & Graphic Inc | コア・シェル型蛍光体微粒子の作製方法 |
JP2016505212A (ja) * | 2012-10-25 | 2016-02-18 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | シリコーン内の量子ドット用pdms系リガンド |
US10035952B2 (en) | 2012-10-25 | 2018-07-31 | Lumileds Llc | PDMS-based ligands for quantum dots in silicones |
US10287490B2 (en) | 2012-10-25 | 2019-05-14 | Lumileds Llc | PDMS-based ligands for quantum dots in silicones |
Also Published As
Publication number | Publication date |
---|---|
EP1603991A1 (en) | 2005-12-14 |
US20060170331A1 (en) | 2006-08-03 |
CN100422286C (zh) | 2008-10-01 |
WO2004081141A1 (en) | 2004-09-23 |
CN1759160A (zh) | 2006-04-12 |
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