JP2006516302A - アルキル−水素シロキサンの分解を防止する添加剤 - Google Patents

アルキル−水素シロキサンの分解を防止する添加剤 Download PDF

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Publication number
JP2006516302A
JP2006516302A JP2004537889A JP2004537889A JP2006516302A JP 2006516302 A JP2006516302 A JP 2006516302A JP 2004537889 A JP2004537889 A JP 2004537889A JP 2004537889 A JP2004537889 A JP 2004537889A JP 2006516302 A JP2006516302 A JP 2006516302A
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Prior art keywords
methylphenyl
branched
straight chain
formula
substituted
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JP2004537889A
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English (en)
Japanese (ja)
Inventor
ダニエル・ジェイ・テフ
グレゴリー・ビー・スミス
ジョン・エル・チャゴラ
ティム・エス・アーンドレイカ
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Fujifilm Electronic Materials USA Inc
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Fujifilm Electronic Materials USA Inc
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/05—Alcohols; Metal alcoholates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/13—Phenols; Phenolates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane
JP2004537889A 2002-09-18 2003-09-18 アルキル−水素シロキサンの分解を防止する添加剤 Pending JP2006516302A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41165102P 2002-09-18 2002-09-18
PCT/US2003/029183 WO2004027110A2 (en) 2002-09-18 2003-09-18 Additives to prevent degradation of alkyl-hydrogen siloxanes

Publications (1)

Publication Number Publication Date
JP2006516302A true JP2006516302A (ja) 2006-06-29

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JP2004537889A Pending JP2006516302A (ja) 2002-09-18 2003-09-18 アルキル−水素シロキサンの分解を防止する添加剤

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US (3) US7129311B2 (US20040127070A1-20040701-C00003.png)
EP (1) EP1573086A4 (US20040127070A1-20040701-C00003.png)
JP (1) JP2006516302A (US20040127070A1-20040701-C00003.png)
KR (1) KR20050089147A (US20040127070A1-20040701-C00003.png)
TW (1) TWI302908B (US20040127070A1-20040701-C00003.png)
WO (1) WO2004027110A2 (US20040127070A1-20040701-C00003.png)

Cited By (6)

* Cited by examiner, † Cited by third party
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JP2005263640A (ja) * 2004-03-16 2005-09-29 Sumitomo Chemical Co Ltd 有機ケイ素系化合物、及びその製造方法
JP2005294333A (ja) * 2004-03-31 2005-10-20 Semiconductor Process Laboratory Co Ltd 成膜方法及び半導体装置
JP2009102317A (ja) * 2007-10-15 2009-05-14 Air Products & Chemicals Inc 置換されたシクロテトラシロキサンの重合を抑制する安定剤
JP5614589B2 (ja) * 2009-02-06 2014-10-29 独立行政法人物質・材料研究機構 絶縁膜材料を用いた成膜方法および絶縁膜
WO2017141796A1 (ja) * 2016-02-15 2017-08-24 国立研究開発法人産業技術総合研究所 シロキサン及びその製造方法
KR20230043295A (ko) * 2021-09-23 2023-03-31 (주)제이아이테크 페놀 계열의 수소-규소 결합의 안정성 개선을 위한 첨가제

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US7456488B2 (en) 2002-11-21 2008-11-25 Advanced Technology Materials, Inc. Porogen material
US7101948B2 (en) 2001-12-21 2006-09-05 Air Products And Chemicals, Inc. Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
CN100422378C (zh) * 2002-06-28 2008-10-01 Sms迪马格股份公司 在连续的熔化浸渍精炼中的隔离气体的使用
US7646081B2 (en) 2003-07-08 2010-01-12 Silecs Oy Low-K dielectric material
JP3788624B1 (ja) * 2005-01-18 2006-06-21 旭電化工業株式会社 シロキサン化合物及びフェノール化合物を含有してなる組成物
KR101237354B1 (ko) * 2005-01-31 2013-02-28 토소가부시키가이샤 환상 실록산 화합물, Ｓｉ함유 막 형성 재료 및 그 용도
US8513448B2 (en) 2005-01-31 2013-08-20 Tosoh Corporation Cyclic siloxane compound, a material for forming Si-containing film, and its use
JP2009507834A (ja) * 2005-09-12 2009-02-26 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド 環状アルケン誘導体の分解を防止する添加剤
TWI411663B (zh) * 2005-09-12 2013-10-11 Fujifilm Electronic Materials 防止環烯烴衍生物降解之添加劑（二）
JP4641933B2 (ja) * 2005-11-28 2011-03-02 三井化学株式会社 薄膜形成方法
JP2007157870A (ja) * 2005-12-02 2007-06-21 Renesas Technology Corp 半導体装置及びその製造方法
US8053375B1 (en) 2006-11-03 2011-11-08 Advanced Technology Materials, Inc. Super-dry reagent compositions for formation of ultra low k films
US20080141901A1 (en) * 2006-12-18 2008-06-19 American Air Liquide, Inc. Additives to stabilize cyclotetrasiloxane and its derivatives
DE102006060355A1 (de) * 2006-12-20 2008-06-26 Wacker Chemie Ag Verfahren zur Herstellung von Tetramethylcyclotetrasiloxan
JP5194028B2 (ja) * 2007-01-12 2013-05-08 ユーティルエックス コーポレイション 電力ケーブルを修復し、そのアルミニウム導線コアの腐食を抑制する組成物および方法
US8173213B2 (en) 2008-05-28 2012-05-08 Air Products And Chemicals, Inc. Process stability of NBDE using substituted phenol stabilizers
CN102089405B (zh) * 2008-07-08 2013-10-16 富士胶片电子材料美国有限公司 防止环烯烃衍生物降解的添加剂
US10543662B2 (en) 2012-02-08 2020-01-28 Corning Incorporated Device modified substrate article and methods for making
US9340443B2 (en) 2012-12-13 2016-05-17 Corning Incorporated Bulk annealing of glass sheets
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US11014819B2 (en) 2013-05-02 2021-05-25 Pallidus, Inc. Methods of providing high purity SiOC and SiC materials
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US10510576B2 (en) 2013-10-14 2019-12-17 Corning Incorporated Carrier-bonding methods and articles for semiconductor and interposer processing
WO2015112958A1 (en) 2014-01-27 2015-07-30 Corning Incorporated Articles and methods for controlled bonding of thin sheets with carriers
SG11201608442TA (en) 2014-04-09 2016-11-29 Corning Inc Device modified substrate article and methods for making
WO2016187186A1 (en) 2015-05-19 2016-11-24 Corning Incorporated Articles and methods for bonding sheets with carriers
US11905201B2 (en) 2015-06-26 2024-02-20 Corning Incorporated Methods and articles including a sheet and a carrier
TW201825623A (zh) 2016-08-30 2018-07-16 美商康寧公司 用於片材接合的矽氧烷電漿聚合物
TWI821867B (zh) 2016-08-31 2023-11-11 美商康寧公司 具以可控制式黏結的薄片之製品及製作其之方法
WO2019118660A1 (en) 2017-12-15 2019-06-20 Corning Incorporated Method for treating a substrate and method for making articles comprising bonded sheets
JP6875336B2 (ja) * 2018-08-27 2021-05-26 信越化学工業株式会社 成膜方法
CN113801155B (zh) * 2020-06-15 2023-10-31 中国石油化工股份有限公司 适用于制备石英砂防吸附亲水涂层的化学剂及其制备和应用
CN113030295B (zh) * 2021-02-08 2023-02-03 广州海关技术中心 一种气相色谱-质谱/质谱法同时测定硅橡胶制品中21种硅氧烷类化合物的残留量的方法

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JPS51113887A (en) * 1975-03-12 1976-10-07 Gen Electric Stabilizing method of hexamethylcyclotrisiloxane and stabtlized product
US5118735A (en) * 1990-10-05 1992-06-02 Hercules Incorporated Organosilicon composition comprising stabilizers
JPH06508176A (ja) * 1992-01-15 1994-09-14 フラメル・テクノロギー ポリシラン系組成物
JPH07145179A (ja) * 1993-11-26 1995-06-06 Shin Etsu Chem Co Ltd 低分子量ポリメチルシクロポリシロキサンの安定化方法
JP2003238578A (ja) * 2001-12-21 2003-08-27 Air Products & Chemicals Inc シクロテトラシロキサンの安定化方法及び組成物

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US7101948B2 (en) 2001-12-21 2006-09-05 Air Products And Chemicals, Inc. Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
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JPS51113887A (en) * 1975-03-12 1976-10-07 Gen Electric Stabilizing method of hexamethylcyclotrisiloxane and stabtlized product
US5118735A (en) * 1990-10-05 1992-06-02 Hercules Incorporated Organosilicon composition comprising stabilizers
JPH06508176A (ja) * 1992-01-15 1994-09-14 フラメル・テクノロギー ポリシラン系組成物
JPH07145179A (ja) * 1993-11-26 1995-06-06 Shin Etsu Chem Co Ltd 低分子量ポリメチルシクロポリシロキサンの安定化方法
JP2003238578A (ja) * 2001-12-21 2003-08-27 Air Products & Chemicals Inc シクロテトラシロキサンの安定化方法及び組成物

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005263640A (ja) * 2004-03-16 2005-09-29 Sumitomo Chemical Co Ltd 有機ケイ素系化合物、及びその製造方法
JP4539131B2 (ja) * 2004-03-16 2010-09-08 住友化学株式会社 有機ケイ素系化合物、及びその製造方法
JP2005294333A (ja) * 2004-03-31 2005-10-20 Semiconductor Process Laboratory Co Ltd 成膜方法及び半導体装置
JP2009102317A (ja) * 2007-10-15 2009-05-14 Air Products & Chemicals Inc 置換されたシクロテトラシロキサンの重合を抑制する安定剤
JP5614589B2 (ja) * 2009-02-06 2014-10-29 独立行政法人物質・材料研究機構 絶縁膜材料を用いた成膜方法および絶縁膜
WO2017141796A1 (ja) * 2016-02-15 2017-08-24 国立研究開発法人産業技術総合研究所 シロキサン及びその製造方法
KR20230043295A (ko) * 2021-09-23 2023-03-31 (주)제이아이테크 페놀 계열의 수소-규소 결합의 안정성 개선을 위한 첨가제
KR102567948B1 (ko) * 2021-09-23 2023-08-21 (주)제이아이테크 페놀 계열의 수소-규소 결합의 안정성 개선을 위한 첨가제

Also Published As

Publication number Publication date
WO2004027110A2 (en) 2004-04-01
US20040127070A1 (en) 2004-07-01
EP1573086A4 (en) 2012-10-03
US7129311B2 (en) 2006-10-31
US20060159861A1 (en) 2006-07-20
US20060270787A1 (en) 2006-11-30
TWI302908B (en) 2008-11-11
TW200404769A (en) 2004-04-01
EP1573086A2 (en) 2005-09-14
WO2004027110A3 (en) 2006-04-06
US7531590B2 (en) 2009-05-12
KR20050089147A (ko) 2005-09-07

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