JP2006515953A - 密閉された集積memsスイッチ - Google Patents
密閉された集積memsスイッチ Download PDFInfo
- Publication number
- JP2006515953A JP2006515953A JP2005506093A JP2005506093A JP2006515953A JP 2006515953 A JP2006515953 A JP 2006515953A JP 2005506093 A JP2005506093 A JP 2005506093A JP 2005506093 A JP2005506093 A JP 2005506093A JP 2006515953 A JP2006515953 A JP 2006515953A
- Authority
- JP
- Japan
- Prior art keywords
- seesaw
- mems switch
- layer
- conductor
- mems
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 239000004020 conductor Substances 0.000 claims abstract description 51
- 239000000463 material Substances 0.000 claims description 20
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 230000004927 fusion Effects 0.000 claims description 5
- 239000012777 electrically insulating material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 125
- 239000011521 glass Substances 0.000 description 69
- 229910052751 metal Inorganic materials 0.000 description 50
- 239000002184 metal Substances 0.000 description 50
- 239000010931 gold Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 13
- 238000001465 metallisation Methods 0.000 description 13
- 238000001020 plasma etching Methods 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000010936 titanium Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000005459 micromachining Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 244000208734 Pisonia aculeata Species 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- WABPQHHGFIMREM-DBXDQKISSA-N lead-198 Chemical compound [198Pb] WABPQHHGFIMREM-DBXDQKISSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/12—Auxiliary devices for switching or interrupting by mechanical chopper
- H01P1/127—Strip line switches
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/04—Networks or arrays of similar microstructural devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
- H01H2059/0054—Rocking contacts or actuating members
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US40131102P | 2002-08-03 | 2002-08-03 | |
| US41532502P | 2002-10-02 | 2002-10-02 | |
| US44295803P | 2003-01-29 | 2003-01-29 | |
| PCT/US2003/024255 WO2004013898A2 (en) | 2002-08-03 | 2003-08-04 | Sealed integral mems switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006515953A true JP2006515953A (ja) | 2006-06-08 |
| JP2006515953A5 JP2006515953A5 (enExample) | 2006-09-21 |
Family
ID=31499336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005506093A Pending JP2006515953A (ja) | 2002-08-03 | 2003-08-04 | 密閉された集積memsスイッチ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7123119B2 (enExample) |
| EP (1) | EP1547189A4 (enExample) |
| JP (1) | JP2006515953A (enExample) |
| KR (1) | KR100997929B1 (enExample) |
| AU (1) | AU2003258020A1 (enExample) |
| WO (1) | WO2004013898A2 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008069202A1 (ja) * | 2006-12-07 | 2008-06-12 | Omron Corporation | 高周波リレー及びその接続構造 |
| JP2011501460A (ja) * | 2007-10-25 | 2011-01-06 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 偏光発光装置 |
| JP2011129369A (ja) * | 2009-12-17 | 2011-06-30 | Fujifilm Corp | 圧電memsスイッチ及びその製造方法 |
Families Citing this family (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060232365A1 (en) * | 2002-10-25 | 2006-10-19 | Sumit Majumder | Micro-machined relay |
| US7275292B2 (en) * | 2003-03-07 | 2007-10-02 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method for fabricating an acoustical resonator on a substrate |
| US7190245B2 (en) | 2003-04-29 | 2007-03-13 | Medtronic, Inc. | Multi-stable micro electromechanical switches and methods of fabricating same |
| US7388459B2 (en) | 2003-10-28 | 2008-06-17 | Medtronic, Inc. | MEMs switching circuit and method for an implantable medical device |
| KR100530010B1 (ko) * | 2003-11-13 | 2005-11-22 | 한국과학기술원 | 전자기력과 정전기력을 이용하여 구동하는 토글방식의저전압, 저전력 초고주파 spdt 마이크로 스위치 |
| WO2005099410A2 (en) | 2004-04-12 | 2005-10-27 | Siverta, Inc. | Single-pole, double-throw mems switch |
| US7615833B2 (en) * | 2004-07-13 | 2009-11-10 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator package and method of fabricating same |
| US7521363B2 (en) * | 2004-08-09 | 2009-04-21 | Analog Devices, Inc. | MEMS device with non-standard profile |
| US7388454B2 (en) | 2004-10-01 | 2008-06-17 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using alternating frame structure |
| US8981876B2 (en) | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
| US7202560B2 (en) | 2004-12-15 | 2007-04-10 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Wafer bonding of micro-electro mechanical systems to active circuitry |
| US7791434B2 (en) | 2004-12-22 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric |
| KR100661350B1 (ko) * | 2004-12-27 | 2006-12-27 | 삼성전자주식회사 | Mems 소자 패키지 및 그 제조방법 |
| JP4417861B2 (ja) * | 2005-01-31 | 2010-02-17 | 富士通株式会社 | マイクロスイッチング素子 |
| US7369013B2 (en) | 2005-04-06 | 2008-05-06 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using filled recessed region |
| US7611919B2 (en) * | 2005-04-21 | 2009-11-03 | Hewlett-Packard Development Company, L.P. | Bonding interface for micro-device packaging |
| US7528691B2 (en) * | 2005-08-26 | 2009-05-05 | Innovative Micro Technology | Dual substrate electrostatic MEMS switch with hermetic seal and method of manufacture |
| US7737807B2 (en) | 2005-10-18 | 2010-06-15 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators |
| GB0523713D0 (en) * | 2005-11-22 | 2005-12-28 | Cavendish Kinetics Ltd | Enclosure method |
| JP2007149370A (ja) * | 2005-11-24 | 2007-06-14 | Fujitsu Media Device Kk | スイッチ |
| KR100697652B1 (ko) | 2005-12-01 | 2007-03-20 | 주식회사 에이스테크놀로지 | 알에프 스위치 |
| JP4628275B2 (ja) * | 2006-01-31 | 2011-02-09 | 富士通株式会社 | マイクロスイッチング素子およびマイクロスイッチング素子製造方法 |
| US7746677B2 (en) | 2006-03-09 | 2010-06-29 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | AC-DC converter circuit and power supply |
| US7479685B2 (en) | 2006-03-10 | 2009-01-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Electronic device on substrate with cavity and mitigated parasitic leakage path |
| US8120133B2 (en) * | 2006-09-11 | 2012-02-21 | Alcatel Lucent | Micro-actuator and locking switch |
| JP4855233B2 (ja) * | 2006-12-07 | 2012-01-18 | 富士通株式会社 | マイクロスイッチング素子およびマイクロスイッチング素子製造方法 |
| ITTO20060907A1 (it) * | 2006-12-20 | 2008-06-21 | St Microelectronics Srl | Procedimento di fabbricazione di un sistema di interazione microelettromeccanico per un supporto di memorizzazione |
| US7732977B2 (en) | 2008-04-30 | 2010-06-08 | Avago Technologies Wireless Ip (Singapore) | Transceiver circuit for film bulk acoustic resonator (FBAR) transducers |
| US7855618B2 (en) | 2008-04-30 | 2010-12-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator electrical impedance transformers |
| DE102008043790B4 (de) * | 2008-11-17 | 2017-04-06 | Robert Bosch Gmbh | Mikromechanisches Bauelement |
| WO2010138717A1 (en) * | 2009-05-27 | 2010-12-02 | King Abdullah University Of Science And Technology | Mems mass spring damper systems using an out-of-plane suspension scheme |
| US8248185B2 (en) | 2009-06-24 | 2012-08-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator structure comprising a bridge |
| US8902023B2 (en) | 2009-06-24 | 2014-12-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
| JP5398411B2 (ja) * | 2009-08-10 | 2014-01-29 | 株式会社東芝 | マイクロ可動デバイスおよびマイクロ可動デバイスの製造方法 |
| US8193877B2 (en) | 2009-11-30 | 2012-06-05 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Duplexer with negative phase shifting circuit |
| US9243316B2 (en) | 2010-01-22 | 2016-01-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method of fabricating piezoelectric material with selected c-axis orientation |
| US8796904B2 (en) | 2011-10-31 | 2014-08-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer |
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| US11083837B2 (en) | 2016-03-22 | 2021-08-10 | International Business Machines Corporation | Secure medication delivery |
| US10376444B2 (en) * | 2016-03-22 | 2019-08-13 | International Business Machines Corporation | Secure medication delivery |
| CN106771667B (zh) * | 2016-12-29 | 2019-05-03 | 西北核技术研究所 | 基于相心旋转的微波测量方法及测量系统 |
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| JPH052977A (ja) * | 1991-06-25 | 1993-01-08 | Matsushita Electric Works Ltd | 静電リレー |
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| JPH0917483A (ja) * | 1995-06-27 | 1997-01-17 | Yokogawa Electric Corp | マイクロマシンデバイスの電極取出構造 |
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- 2003-08-04 KR KR1020057001977A patent/KR100997929B1/ko not_active Expired - Fee Related
- 2003-08-04 EP EP03767105A patent/EP1547189A4/en not_active Withdrawn
- 2003-08-04 JP JP2005506093A patent/JP2006515953A/ja active Pending
- 2003-08-04 WO PCT/US2003/024255 patent/WO2004013898A2/en not_active Ceased
- 2003-08-04 US US10/523,532 patent/US7123119B2/en not_active Expired - Fee Related
- 2003-08-04 AU AU2003258020A patent/AU2003258020A1/en not_active Abandoned
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008069202A1 (ja) * | 2006-12-07 | 2008-06-12 | Omron Corporation | 高周波リレー及びその接続構造 |
| US8421561B2 (en) | 2006-12-07 | 2013-04-16 | Omron Corporation | High frequency relay and its connection structure |
| JP2011501460A (ja) * | 2007-10-25 | 2011-01-06 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 偏光発光装置 |
| JP2011129369A (ja) * | 2009-12-17 | 2011-06-30 | Fujifilm Corp | 圧電memsスイッチ及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004013898A2 (en) | 2004-02-12 |
| KR20050083613A (ko) | 2005-08-26 |
| AU2003258020A8 (en) | 2004-02-23 |
| WO2004013898A3 (en) | 2004-06-10 |
| KR100997929B1 (ko) | 2010-12-02 |
| AU2003258020A1 (en) | 2004-02-23 |
| US7123119B2 (en) | 2006-10-17 |
| EP1547189A2 (en) | 2005-06-29 |
| US20050206483A1 (en) | 2005-09-22 |
| EP1547189A4 (en) | 2006-11-08 |
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