JP2006513615A - 一定の入力インピーダンスを有する制御可能なrf広帯域増幅器 - Google Patents
一定の入力インピーダンスを有する制御可能なrf広帯域増幅器 Download PDFInfo
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- JP2006513615A JP2006513615A JP2004565954A JP2004565954A JP2006513615A JP 2006513615 A JP2006513615 A JP 2006513615A JP 2004565954 A JP2004565954 A JP 2004565954A JP 2004565954 A JP2004565954 A JP 2004565954A JP 2006513615 A JP2006513615 A JP 2006513615A
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- amplifier
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- limiting means
- amplifier device
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- 238000010606 normalization Methods 0.000 claims 1
- 230000003321 amplification Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7203—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias current in the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7206—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias voltage in the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7227—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the supply circuit of the amplifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Control Of Amplification And Gain Control (AREA)
Abstract
Description
図1は、2つの増幅段を備えた本発明による高周波増幅器の概略図であり、
図2は、選択された第1の利得レベルを有する、図1に示した本発明による高周波増幅器の回路を示し、
図3は、選択された第2の利得レベルを有する、図1に示した本発明による高周波増幅器を示す。
Claims (14)
- 並列に接続されている少なくとも2つの基本的な増幅器を備えている、可変の利得係数を有する増幅器装置において、
各基本的な増幅器には独立した電流制限手段(R1;R2,R3)が対応付けられており、該電流制限手段を、増幅すべき入力信号の別個の基準化に関して選択的に切り換え可能であり、
各基本的な増幅器に関して実質的に等しい入力インピーダンスが前記電流制限手段(R1;R2,R3)を用いてセットされることを特徴とする、増幅器装置。 - 少なくとも1つの基本的な増幅器はベース接地トランジスタ回路(T1;T2)である、請求項1記載の増幅器回路。
- トランジスタを線形領域で動作させる手段(U1,J1;U2,J2)が設けられている、請求項1および2記載の増幅器回路。
- 前記手段は電流源(J1;J2)を包含する、請求項3記載の増幅器装置。
- 前記基本的な増幅器のトランジスタの少なくとも2つのコレクタ接続部は共通の出力側(OUT)を形成する、請求項1から4までのいずれか1項または複数項記載の増幅器装置。
- 前記基本的な増幅器のトランジスタのベース接続部はスイッチ(S2;S5)を介してDC電圧電位(U1;U2)に接続可能である、請求項1から5までのいずれか1項または複数項記載の増幅器装置。
- 前記スイッチ(S2;S5)はスイッチングダイオードおよび/または電子スイッチである、請求項6記載の増幅器装置。
- 前記電流制限手段(R1;R2,R3)は抵抗である、請求項1から7までのいずれか1項または複数項記載の増幅器装置。
- 入力信号の第1の部分は、前記電流制限手段(R1;R3)の第1の部分を介して1つの基本的な増幅器に供給可能であり、前記電流制限手段(R1;R3)はいかなる場合にも該基本的な増幅器に対応付けられている、請求項1から8までのいずれか1項または複数項記載の増幅器装置。
- 入力信号の第2の部分は信号に関して、前記電流制限手段(R2)の第2の部分を介してアースにタップ可能であり、前記電流制限手段(R2)はいかなる場合にも1つの基本的な増幅器に対応付けられている、請求項1から9までのいずれか1項または複数項記載の増幅器装置。
- いかなる場合にも1つの基本的な増幅器と関連付けられている前記電流制限手段(R2,R3)の前記第1の部分および前記第2の部分は、該第1の部分および該第2の部分が入力信号に対して並列回路を表すように接続されている、請求項1から10までのいずれか1項または複数項記載の増幅器装置。
- 各基本的な増幅器の前記電流制限手段(R2,R3)の前記第1の部分および前記第2の部分を包含する前記並列回路の合成インピーダンスは実質的に同一の値を有する、請求項1から11までのいずれか1項または複数項記載の増幅器装置。
- 請求項1から12までのいずれか1項または複数項記載の増幅器装置を有する、放送無線受信機。
- 請求項1から12までのいずれか1項または複数項記載の増幅器装置を有する、データ信号受信機。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10300431A DE10300431A1 (de) | 2003-01-09 | 2003-01-09 | Regelbarer HF-Breitbandverstärker mit konstanter Eingangsimpedanz |
DE10300431.9 | 2003-01-09 | ||
PCT/EP2003/013741 WO2004064250A1 (en) | 2003-01-09 | 2003-12-05 | Controllable rf broadband amplifier with a constant input impedance |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006513615A true JP2006513615A (ja) | 2006-04-20 |
JP2006513615A5 JP2006513615A5 (ja) | 2007-01-25 |
JP5079213B2 JP5079213B2 (ja) | 2012-11-21 |
Family
ID=32519734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004565954A Expired - Fee Related JP5079213B2 (ja) | 2003-01-09 | 2003-12-05 | 一定の入力インピーダンスを有する制御可能なrf広帯域増幅器 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7286017B2 (ja) |
EP (1) | EP1581995B1 (ja) |
JP (1) | JP5079213B2 (ja) |
KR (1) | KR101007579B1 (ja) |
CN (1) | CN100472960C (ja) |
AU (1) | AU2003303699A1 (ja) |
DE (1) | DE10300431A1 (ja) |
MX (1) | MXPA05007301A (ja) |
WO (1) | WO2004064250A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016504004A (ja) * | 2013-01-17 | 2016-02-08 | クゥアルコム・インコーポレイテッドQualcomm Incorporated | 切替え可能共通ゲートゲインバッファをもつ増幅器 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112005003645B4 (de) * | 2005-07-29 | 2012-07-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verstärkerschaltung mit einstellbarer Verstärkung |
JP2007221402A (ja) * | 2006-02-16 | 2007-08-30 | Fujitsu Ltd | 可変利得増幅器及びその半導体集積装置 |
US9893693B2 (en) * | 2012-12-07 | 2018-02-13 | Futurewei Technologies, Inc. | Gain control method for a broadband inductorless low noise amplifier |
KR102621951B1 (ko) * | 2021-10-13 | 2024-01-09 | 고려대학교 산학협력단 | 삽입 손실 개선을 위한 능동형 스위치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5530404A (en) * | 1993-12-17 | 1996-06-25 | Thomson-Csf Semiconducteurs Specifiques | Variable gain amplifier having n parallel-connected elementary amplifiers |
JPH10126215A (ja) * | 1996-10-18 | 1998-05-15 | Matsushita Electric Ind Co Ltd | 可変減衰装置 |
JP2000101371A (ja) * | 1998-09-28 | 2000-04-07 | Matsushita Electric Ind Co Ltd | 可変利得増幅器 |
JP2002344266A (ja) * | 2001-05-18 | 2002-11-29 | Matsushita Electric Ind Co Ltd | 可変利得増幅器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10190378A (ja) * | 1996-12-27 | 1998-07-21 | Nec Corp | 超高効率線形増幅器 |
US5977828A (en) * | 1997-12-12 | 1999-11-02 | Nortel Networks Corporation | Multiple-tail transconductance switchable gain amplifer |
FI106412B (fi) * | 1998-11-10 | 2001-01-31 | Nokia Mobile Phones Ltd | Lineaarinen tehovahvistinjärjestely ja menetelmä sen käyttämiseksi |
DE19854847C2 (de) * | 1998-11-27 | 2003-07-31 | Vishay Semiconductor Gmbh | Verstärkeranordnung |
US6288608B1 (en) * | 2000-04-28 | 2001-09-11 | International Business Machines Corporation | Radio frequency power amplifier for a battery powered handset unit of a wireless communications system |
DE10132800C1 (de) * | 2001-07-06 | 2003-01-30 | Infineon Technologies Ag | Rauscharme Verstärkerschaltung |
-
2003
- 2003-01-09 DE DE10300431A patent/DE10300431A1/de not_active Withdrawn
- 2003-12-05 KR KR1020057012712A patent/KR101007579B1/ko not_active IP Right Cessation
- 2003-12-05 US US10/541,855 patent/US7286017B2/en not_active Expired - Lifetime
- 2003-12-05 JP JP2004565954A patent/JP5079213B2/ja not_active Expired - Fee Related
- 2003-12-05 EP EP03815054A patent/EP1581995B1/en not_active Expired - Lifetime
- 2003-12-05 WO PCT/EP2003/013741 patent/WO2004064250A1/en active Application Filing
- 2003-12-05 AU AU2003303699A patent/AU2003303699A1/en not_active Abandoned
- 2003-12-05 CN CNB2003801084610A patent/CN100472960C/zh not_active Expired - Fee Related
- 2003-12-05 MX MXPA05007301A patent/MXPA05007301A/es active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5530404A (en) * | 1993-12-17 | 1996-06-25 | Thomson-Csf Semiconducteurs Specifiques | Variable gain amplifier having n parallel-connected elementary amplifiers |
JPH10126215A (ja) * | 1996-10-18 | 1998-05-15 | Matsushita Electric Ind Co Ltd | 可変減衰装置 |
JP2000101371A (ja) * | 1998-09-28 | 2000-04-07 | Matsushita Electric Ind Co Ltd | 可変利得増幅器 |
JP2002344266A (ja) * | 2001-05-18 | 2002-11-29 | Matsushita Electric Ind Co Ltd | 可変利得増幅器 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016504004A (ja) * | 2013-01-17 | 2016-02-08 | クゥアルコム・インコーポレイテッドQualcomm Incorporated | 切替え可能共通ゲートゲインバッファをもつ増幅器 |
Also Published As
Publication number | Publication date |
---|---|
MXPA05007301A (es) | 2006-02-17 |
WO2004064250A1 (en) | 2004-07-29 |
KR20050093820A (ko) | 2005-09-23 |
KR101007579B1 (ko) | 2011-01-14 |
US20060125565A1 (en) | 2006-06-15 |
CN1736022A (zh) | 2006-02-15 |
JP5079213B2 (ja) | 2012-11-21 |
US7286017B2 (en) | 2007-10-23 |
CN100472960C (zh) | 2009-03-25 |
DE10300431A1 (de) | 2004-07-22 |
EP1581995B1 (en) | 2012-02-08 |
AU2003303699A1 (en) | 2004-08-10 |
EP1581995A1 (en) | 2005-10-05 |
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