JP2006513046A - ゲッター物質のデポジットと組み込まれたヒーターを有するマイクロ機械デバイス又はマイクロオプトエレクトロニック・デバイス、及びその製造のためのサポート - Google Patents
ゲッター物質のデポジットと組み込まれたヒーターを有するマイクロ機械デバイス又はマイクロオプトエレクトロニック・デバイス、及びその製造のためのサポート Download PDFInfo
- Publication number
- JP2006513046A JP2006513046A JP2004567099A JP2004567099A JP2006513046A JP 2006513046 A JP2006513046 A JP 2006513046A JP 2004567099 A JP2004567099 A JP 2004567099A JP 2004567099 A JP2004567099 A JP 2004567099A JP 2006513046 A JP2006513046 A JP 2006513046A
- Authority
- JP
- Japan
- Prior art keywords
- getter material
- deposit
- getter
- base
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 88
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 150000002739 metals Chemical class 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910004688 Ti-V Inorganic materials 0.000 claims description 2
- 229910010968 Ti—V Inorganic materials 0.000 claims description 2
- 229910007727 Zr V Inorganic materials 0.000 claims description 2
- 229910003126 Zr–Ni Inorganic materials 0.000 claims description 2
- 229910002056 binary alloy Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910002058 ternary alloy Inorganic materials 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 230000005670 electromagnetic radiation Effects 0.000 claims 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 2
- 239000011800 void material Substances 0.000 claims 2
- 239000007789 gas Substances 0.000 abstract description 21
- 239000010410 layer Substances 0.000 description 43
- 238000000034 method Methods 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000000126 substance Substances 0.000 description 8
- 230000004913 activation Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001962 electrophoresis Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- -1 rare earths Inorganic materials 0.000 description 2
- 230000007420 reactivation Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000069A ITMI20030069A1 (it) | 2003-01-17 | 2003-01-17 | Dispositivi micromeccanici o microoptoelettronici con deposito di materiale getter e riscaldatore integrato. |
| PCT/IT2003/000857 WO2004065289A2 (en) | 2003-01-17 | 2003-12-24 | Micromechanical or microoptoelectronic devices with deposit of getter material and integrated heater, and support for the production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006513046A true JP2006513046A (ja) | 2006-04-20 |
| JP2006513046A5 JP2006513046A5 (enExample) | 2006-12-07 |
Family
ID=32750478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004567099A Pending JP2006513046A (ja) | 2003-01-17 | 2003-12-24 | ゲッター物質のデポジットと組み込まれたヒーターを有するマイクロ機械デバイス又はマイクロオプトエレクトロニック・デバイス、及びその製造のためのサポート |
Country Status (11)
| Country | Link |
|---|---|
| EP (1) | EP1592643A2 (enExample) |
| JP (1) | JP2006513046A (enExample) |
| KR (1) | KR20050092426A (enExample) |
| CN (1) | CN100453442C (enExample) |
| AU (1) | AU2003295223A1 (enExample) |
| CA (1) | CA2511836A1 (enExample) |
| IT (1) | ITMI20030069A1 (enExample) |
| MY (1) | MY157923A (enExample) |
| NO (1) | NO20053804L (enExample) |
| TW (1) | TW200500291A (enExample) |
| WO (1) | WO2004065289A2 (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008072091A (ja) * | 2006-07-13 | 2008-03-27 | Commiss Energ Atom | 少なくとも1つのゲッターを備えた密閉超小型部品 |
| JP2008132587A (ja) * | 2006-08-07 | 2008-06-12 | Honeywell Internatl Inc | ウェハレベル真空パッケージデバイスの製造方法 |
| JP2008527730A (ja) * | 2005-01-12 | 2008-07-24 | フラウンホッファー−ゲゼルシャフト ツァ フェルダールング デァ アンゲヴァンテン フォアシュンク エー.ファオ | 半導体デバイスの空洞内に所定の内圧を形成する方法 |
| JP2010012595A (ja) * | 2008-07-01 | 2010-01-21 | Commiss Energ Atom | 吊り下げゲッター材料ベース構造 |
| JP2010251702A (ja) * | 2009-03-27 | 2010-11-04 | Kyocera Corp | 電子部品、パッケージおよび赤外線センサ |
| US10199515B2 (en) | 2016-06-15 | 2019-02-05 | Seiko Epson Corporation | Vacuum package, electronic device, and vehicle |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITMI20052343A1 (it) * | 2005-12-06 | 2007-06-07 | Getters Spa | Processo per la produzione di dispositivi micromeccanici contenenti un materiale getter e dispositivi cosi'prodotti |
| FR2898597B1 (fr) | 2006-03-16 | 2008-09-19 | Commissariat Energie Atomique | Encapsulation dans une cavite hermetique d'un compose microelectronique, notamment d'un mems |
| ITMI20070301A1 (it) | 2007-02-16 | 2008-08-17 | Getters Spa | Supporti comprendenti materiali getter e sorgenti di metalli alcalini o alcalino-terrosi per sistemi di termoregolazione basati su effetto tunnel |
| FR2956521B1 (fr) * | 2010-02-16 | 2012-08-17 | Thales Sa | Dispositif comprenant des composants electriques, electroniques, electromecaniques ou electro-optiques, a sensibilite reduite a faible debit de dose |
| US9491802B2 (en) | 2012-02-17 | 2016-11-08 | Honeywell International Inc. | On-chip alkali dispenser |
| EP2736071B8 (en) | 2012-11-22 | 2017-04-19 | Tronic's Microsystems S.A. | Wafer level package with getter |
| JP6193480B2 (ja) | 2013-05-24 | 2017-09-06 | スナップトラック・インコーポレーテッド | 微小電気機械システムデバイスパッケージおよび微小電気機械システムデバイスパッケージを製造するための方法 |
| EP2813465B1 (en) | 2013-06-12 | 2020-01-15 | Tronic's Microsystems | MEMS device with getter layer |
| FR3008965B1 (fr) * | 2013-07-26 | 2017-03-03 | Commissariat Energie Atomique | Structure d'encapsulation comprenant un capot renforce mecaniquement et a effet getter |
| CN104743502A (zh) * | 2013-12-31 | 2015-07-01 | 北京有色金属研究总院 | 一种具有复合吸气剂层的mems组件及其制备方法 |
| CN109173690B (zh) * | 2018-09-20 | 2020-10-09 | 内蒙古科技大学 | 一种用于金属材料热处理中的空气消耗剂 |
| CN114057156A (zh) * | 2021-12-21 | 2022-02-18 | 罕王微电子(辽宁)有限公司 | 一种用于晶圆级mems真空封装的金属扩散吸附系统及工艺 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5734226A (en) * | 1992-08-12 | 1998-03-31 | Micron Technology, Inc. | Wire-bonded getters useful in evacuated displays |
| US5610438A (en) * | 1995-03-08 | 1997-03-11 | Texas Instruments Incorporated | Micro-mechanical device with non-evaporable getter |
| US5837935A (en) * | 1996-02-26 | 1998-11-17 | Ford Motor Company | Hermetic seal for an electronic component having a secondary chamber |
| SE9700612D0 (sv) * | 1997-02-20 | 1997-02-20 | Cecap Ab | Sensorelement med integrerat referenstryck |
| US6992375B2 (en) * | 2000-11-30 | 2006-01-31 | Texas Instruments Incorporated | Anchor for device package |
-
2003
- 2003-01-17 IT IT000069A patent/ITMI20030069A1/it unknown
- 2003-12-24 AU AU2003295223A patent/AU2003295223A1/en not_active Abandoned
- 2003-12-24 EP EP03786227A patent/EP1592643A2/en not_active Withdrawn
- 2003-12-24 CA CA002511836A patent/CA2511836A1/en not_active Abandoned
- 2003-12-24 CN CNB200380108858XA patent/CN100453442C/zh not_active Expired - Fee Related
- 2003-12-24 JP JP2004567099A patent/JP2006513046A/ja active Pending
- 2003-12-24 KR KR1020057013228A patent/KR20050092426A/ko not_active Ceased
- 2003-12-24 WO PCT/IT2003/000857 patent/WO2004065289A2/en not_active Ceased
-
2004
- 2004-01-07 TW TW093100361A patent/TW200500291A/zh unknown
- 2004-01-15 MY MYPI20040115A patent/MY157923A/en unknown
-
2005
- 2005-08-12 NO NO20053804A patent/NO20053804L/no unknown
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008527730A (ja) * | 2005-01-12 | 2008-07-24 | フラウンホッファー−ゲゼルシャフト ツァ フェルダールング デァ アンゲヴァンテン フォアシュンク エー.ファオ | 半導体デバイスの空洞内に所定の内圧を形成する方法 |
| JP4809848B2 (ja) * | 2005-01-12 | 2011-11-09 | フラウンホッファー−ゲゼルシャフト ツァ フェルダールング デァ アンゲヴァンテン フォアシュンク エー.ファオ | 半導体デバイスの空洞内に所定の内圧を形成する方法 |
| JP2008072091A (ja) * | 2006-07-13 | 2008-03-27 | Commiss Energ Atom | 少なくとも1つのゲッターを備えた密閉超小型部品 |
| JP2008132587A (ja) * | 2006-08-07 | 2008-06-12 | Honeywell Internatl Inc | ウェハレベル真空パッケージデバイスの製造方法 |
| JP2010012595A (ja) * | 2008-07-01 | 2010-01-21 | Commiss Energ Atom | 吊り下げゲッター材料ベース構造 |
| US9260291B2 (en) | 2008-07-01 | 2016-02-16 | Commissariat A L'energie Atomique | Suspended getter material-based structure |
| JP2010251702A (ja) * | 2009-03-27 | 2010-11-04 | Kyocera Corp | 電子部品、パッケージおよび赤外線センサ |
| US10199515B2 (en) | 2016-06-15 | 2019-02-05 | Seiko Epson Corporation | Vacuum package, electronic device, and vehicle |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20050092426A (ko) | 2005-09-21 |
| ITMI20030069A1 (it) | 2004-07-18 |
| HK1087090A1 (zh) | 2006-10-06 |
| WO2004065289A2 (en) | 2004-08-05 |
| WO2004065289A3 (en) | 2005-01-06 |
| AU2003295223A1 (en) | 2004-08-13 |
| MY157923A (en) | 2016-08-15 |
| CN1738765A (zh) | 2006-02-22 |
| CA2511836A1 (en) | 2004-08-05 |
| EP1592643A2 (en) | 2005-11-09 |
| TW200500291A (en) | 2005-01-01 |
| CN100453442C (zh) | 2009-01-21 |
| NO20053804L (no) | 2005-08-12 |
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