CA2511836A1 - Micromechanical or microoptoelectronic devices with deposit of getter material and integrated heater, and support for the production thereof - Google Patents
Micromechanical or microoptoelectronic devices with deposit of getter material and integrated heater, and support for the production thereof Download PDFInfo
- Publication number
- CA2511836A1 CA2511836A1 CA002511836A CA2511836A CA2511836A1 CA 2511836 A1 CA2511836 A1 CA 2511836A1 CA 002511836 A CA002511836 A CA 002511836A CA 2511836 A CA2511836 A CA 2511836A CA 2511836 A1 CA2511836 A1 CA 2511836A1
- Authority
- CA
- Canada
- Prior art keywords
- deposit
- getter material
- base
- layer
- throughholes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000463 material Substances 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 22
- 150000002739 metals Chemical class 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910004688 Ti-V Inorganic materials 0.000 claims description 2
- 229910010968 Ti—V Inorganic materials 0.000 claims description 2
- 229910007727 Zr V Inorganic materials 0.000 claims description 2
- 229910003126 Zr–Ni Inorganic materials 0.000 claims description 2
- 229910002056 binary alloy Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910002058 ternary alloy Inorganic materials 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 230000005670 electromagnetic radiation Effects 0.000 claims 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 2
- 239000007789 gas Substances 0.000 abstract description 20
- 238000001179 sorption measurement Methods 0.000 abstract description 4
- 230000001627 detrimental effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 43
- 238000000034 method Methods 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 230000004913 activation Effects 0.000 description 10
- 230000005855 radiation Effects 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 238000005530 etching Methods 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000007420 reactivation Effects 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001962 electrophoresis Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical class [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001122 Mischmetal Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000069A ITMI20030069A1 (it) | 2003-01-17 | 2003-01-17 | Dispositivi micromeccanici o microoptoelettronici con deposito di materiale getter e riscaldatore integrato. |
| ITMI2003A000069 | 2003-01-17 | ||
| PCT/IT2003/000857 WO2004065289A2 (en) | 2003-01-17 | 2003-12-24 | Micromechanical or microoptoelectronic devices with deposit of getter material and integrated heater, and support for the production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2511836A1 true CA2511836A1 (en) | 2004-08-05 |
Family
ID=32750478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002511836A Abandoned CA2511836A1 (en) | 2003-01-17 | 2003-12-24 | Micromechanical or microoptoelectronic devices with deposit of getter material and integrated heater, and support for the production thereof |
Country Status (11)
| Country | Link |
|---|---|
| EP (1) | EP1592643A2 (enExample) |
| JP (1) | JP2006513046A (enExample) |
| KR (1) | KR20050092426A (enExample) |
| CN (1) | CN100453442C (enExample) |
| AU (1) | AU2003295223A1 (enExample) |
| CA (1) | CA2511836A1 (enExample) |
| IT (1) | ITMI20030069A1 (enExample) |
| MY (1) | MY157923A (enExample) |
| NO (1) | NO20053804L (enExample) |
| TW (1) | TW200500291A (enExample) |
| WO (1) | WO2004065289A2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005001449B3 (de) * | 2005-01-12 | 2006-07-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Erzeugen eines vorgegebenen Innendrucks in einem Hohlraum eines Halbleiterbauelements |
| ITMI20052343A1 (it) * | 2005-12-06 | 2007-06-07 | Getters Spa | Processo per la produzione di dispositivi micromeccanici contenenti un materiale getter e dispositivi cosi'prodotti |
| FR2898597B1 (fr) | 2006-03-16 | 2008-09-19 | Commissariat Energie Atomique | Encapsulation dans une cavite hermetique d'un compose microelectronique, notamment d'un mems |
| FR2903678B1 (fr) * | 2006-07-13 | 2008-10-24 | Commissariat Energie Atomique | Microcomposant encapsule equipe d'au moins un getter |
| US7402905B2 (en) * | 2006-08-07 | 2008-07-22 | Honeywell International Inc. | Methods of fabrication of wafer-level vacuum packaged devices |
| ITMI20070301A1 (it) | 2007-02-16 | 2008-08-17 | Getters Spa | Supporti comprendenti materiali getter e sorgenti di metalli alcalini o alcalino-terrosi per sistemi di termoregolazione basati su effetto tunnel |
| FR2933389B1 (fr) * | 2008-07-01 | 2010-10-29 | Commissariat Energie Atomique | Structure a base d'un materiau getter suspendu |
| JP2010251702A (ja) * | 2009-03-27 | 2010-11-04 | Kyocera Corp | 電子部品、パッケージおよび赤外線センサ |
| FR2956521B1 (fr) * | 2010-02-16 | 2012-08-17 | Thales Sa | Dispositif comprenant des composants electriques, electroniques, electromecaniques ou electro-optiques, a sensibilite reduite a faible debit de dose |
| US9491802B2 (en) | 2012-02-17 | 2016-11-08 | Honeywell International Inc. | On-chip alkali dispenser |
| EP2736071B8 (en) | 2012-11-22 | 2017-04-19 | Tronic's Microsystems S.A. | Wafer level package with getter |
| JP6193480B2 (ja) | 2013-05-24 | 2017-09-06 | スナップトラック・インコーポレーテッド | 微小電気機械システムデバイスパッケージおよび微小電気機械システムデバイスパッケージを製造するための方法 |
| EP2813465B1 (en) | 2013-06-12 | 2020-01-15 | Tronic's Microsystems | MEMS device with getter layer |
| FR3008965B1 (fr) * | 2013-07-26 | 2017-03-03 | Commissariat Energie Atomique | Structure d'encapsulation comprenant un capot renforce mecaniquement et a effet getter |
| CN104743502A (zh) * | 2013-12-31 | 2015-07-01 | 北京有色金属研究总院 | 一种具有复合吸气剂层的mems组件及其制备方法 |
| JP2017224704A (ja) | 2016-06-15 | 2017-12-21 | セイコーエプソン株式会社 | 真空パッケージ、電子デバイス、電子機器及び移動体 |
| CN109173690B (zh) * | 2018-09-20 | 2020-10-09 | 内蒙古科技大学 | 一种用于金属材料热处理中的空气消耗剂 |
| CN114057156A (zh) * | 2021-12-21 | 2022-02-18 | 罕王微电子（辽宁）有限公司 | 一种用于晶圆级mems真空封装的金属扩散吸附系统及工艺 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5734226A (en) * | 1992-08-12 | 1998-03-31 | Micron Technology, Inc. | Wire-bonded getters useful in evacuated displays |
| US5610438A (en) * | 1995-03-08 | 1997-03-11 | Texas Instruments Incorporated | Micro-mechanical device with non-evaporable getter |
| US5837935A (en) * | 1996-02-26 | 1998-11-17 | Ford Motor Company | Hermetic seal for an electronic component having a secondary chamber |
| SE9700612D0 (sv) * | 1997-02-20 | 1997-02-20 | Cecap Ab | Sensorelement med integrerat referenstryck |
| US6992375B2 (en) * | 2000-11-30 | 2006-01-31 | Texas Instruments Incorporated | Anchor for device package |
-
2003
- 2003-01-17 IT IT000069A patent/ITMI20030069A1/it unknown
- 2003-12-24 AU AU2003295223A patent/AU2003295223A1/en not_active Abandoned
- 2003-12-24 EP EP03786227A patent/EP1592643A2/en not_active Withdrawn
- 2003-12-24 CA CA002511836A patent/CA2511836A1/en not_active Abandoned
- 2003-12-24 CN CNB200380108858XA patent/CN100453442C/zh not_active Expired - Fee Related
- 2003-12-24 JP JP2004567099A patent/JP2006513046A/ja active Pending
- 2003-12-24 KR KR1020057013228A patent/KR20050092426A/ko not_active Ceased
- 2003-12-24 WO PCT/IT2003/000857 patent/WO2004065289A2/en not_active Ceased
-
2004
- 2004-01-07 TW TW093100361A patent/TW200500291A/zh unknown
- 2004-01-15 MY MYPI20040115A patent/MY157923A/en unknown
-
2005
- 2005-08-12 NO NO20053804A patent/NO20053804L/no unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20050092426A (ko) | 2005-09-21 |
| ITMI20030069A1 (it) | 2004-07-18 |
| HK1087090A1 (zh) | 2006-10-06 |
| WO2004065289A2 (en) | 2004-08-05 |
| WO2004065289A3 (en) | 2005-01-06 |
| AU2003295223A1 (en) | 2004-08-13 |
| JP2006513046A (ja) | 2006-04-20 |
| MY157923A (en) | 2016-08-15 |
| CN1738765A (zh) | 2006-02-22 |
| EP1592643A2 (en) | 2005-11-09 |
| TW200500291A (en) | 2005-01-01 |
| CN100453442C (zh) | 2009-01-21 |
| NO20053804L (no) | 2005-08-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Discontinued |