JP2006508535A - 低k誘電体フィルムのための乾燥処理 - Google Patents
低k誘電体フィルムのための乾燥処理 Download PDFInfo
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/3105—After-treatment
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Abstract
【解決手段】集積回路の低k誘電体フィルムから汚染物質を乾燥して取り除くための方法。この方法は、低k誘電体層を光子に露出させ、光子の露光と同時に、あるいはその前か後に、低k誘電体層の劣化を生じさせないで汚染物質を取り除くのに有効な処理に対して基板を露出させることからなる。この処理は、加熱処理、真空処理、脱酸素プラズマ処理、及びそれらの組み合わせからなるグループから選択されることを特徴とする。
Description
ある低誘電体フィルムの特性としては、均一な厚さ、誘電率、屈折率、粘性、化学的耐性、温度安定性、孔寸法及びその分布、温度膨張係数、ガラス転移温度、フィルムストレス、及び銅拡散係数を含む。
炭化水素は、好ましくは、少なくとも1つの水素と、1〜12の炭素原子を有し、さらに好ましくは、3〜10の炭素原子を有する。好ましい水素含有ガスの例は、メタン、エタン、アンモニア、及びプロパンを含む。
この例では、約1ミクロンの厚さを有する多孔のドープされた酸化物である低k誘電体層が、シリコン基板上でスピンコートされ、硬化され、そして周囲湿度にさらされる。湿度及び汚染物質の吸収に関連したピーク値は、約3000〜約3400オングストロームおよび約1400オングストロームの各波長における基板のFTIRスペクトルで容易に観測することができる。
12 処理室
14 放射源室
16 チャック
18 基板
20 放射源
22 プレート
Claims (17)
- 処理室内において、低k誘電体層を有する基板から汚染物質を取り除くための乾燥方法であって、
前記低k誘電体層を光子に露出させ、
光子の露光と同時に、あるいはその前か後に、低k誘電体層の劣化を生じさせないで汚染物質を取り除くのに有効な処理に対して基板を露出させ、
この処理は、加熱処理、真空処理、脱酸素プラズマ処理、及びそれらの組み合わせからなるグループから選択されることを特徴とする乾燥方法。 - 前記光子は、紫外線放射またはx線放射によって発生することを特徴とする請求項1記載の方法。
- 前記低k誘電体層は、多孔性または非多孔性のドープした酸化物材料からなり、前記加熱処理は、基板を約20℃〜約400℃の温度で加熱することを特徴とする請求項1記載の方法。
- 低k誘電体層は、多孔性または非多孔性のドープした酸化物材料からなり、前記加熱処理は、基板を約100℃〜約300℃の温度で加熱することことを特徴とする請求項1記載の方法。
- 前記低k誘電体層は、有機材料からなり、前記加熱処理は、基板を約80℃〜約180℃の温度で加熱することを特徴とする請求項1記載の方法。
- 前記光子は、平方センチメートル当たり約10ミリワット〜約1ワットのエネルギー密度を有する基板に入射することを特徴とする請求項1記載の方法。
- 前記真空処理は、前記基板の回りの圧力を約1〜約10ミリトルに減少させることからなる請求項1記載の方法。
- さらに、活性ガスを用いて前記処理室を清浄するステップを有することを特徴とする請求項1記載の方法。
- 低k誘電体層内に、吸着、固着、又は捕捉された汚染物質を取り除くための方法であって、前記汚染物質は、残留水、湿気、シラノール、残留プラズマ、または湿気清浄化学の湿式エッチング化学残留物、酸、塩基、および溶剤を含んでおり、前記方法は、
処理室内において、約150ナノメータ〜約500ナノメータの波長からなる放射線に前記低k誘電体層を露出させ、そして、
脱酸素プラズマ、または加熱、又は真空、又はそれらの組み合わせたものに前記基板を露出させ、低k誘電体フィルム層の劣化を生じさせないで汚染物質を除去する、各ステップを含んでいることを特徴とする汚染物質の除去方法。 - 前記低k誘電体層は、多孔性材料またはドープした酸化物材料からなり、前記基板の加熱は、約20℃〜約400℃の温度である請求項9記載の方法。
- 前記前記低k誘電体層は、多孔性材料またはドープした酸化物材料からなり、前記基板の加熱は、約100℃〜約300℃の温度であることを特徴とする請求項9記載の方法。
- 前記低k誘電体層は、有機材料からなり、前記基板の加熱は、約80℃〜約180℃の温度であることを特徴とする請求項9記載の方法。
- 圧力を減少させることは、処理室内の圧力を約1〜約10ミリトルの間に低下させることからなる請求項9記載の方法。
- 前記低k誘電体層を放射線に露出させる時間は、約120秒より短いことを特徴とする請求項9記載の方法。
- 前記低k誘電体層を放射線に露出させる時間は、約60秒より短いことを特徴とする請求項9記載の方法。
- 前記プラズマは、水素関連ガス及び活性ガスを含んでいることを特徴とする請求項9記載の方法。
- 処理室内において、低k誘電体層を有する基板から汚染物質を取り除くための乾燥方法であって、
前記低k誘電体層を電磁気放射に露出させ、
前記電磁気放射の露出と同時に、あるいはその前か後に、低k誘電体層の劣化を生じさせないで汚染物質を取り除くのに有効な処理に、基板を露出させ、
この処理は、加熱処理、真空処理、脱酸素プラズマ処理、及びそれらの組み合わせからなるグループから選択されることを特徴とする乾燥方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/065,861 US20040099283A1 (en) | 2002-11-26 | 2002-11-26 | Drying process for low-k dielectric films |
PCT/US2003/038019 WO2004049073A2 (en) | 2002-11-26 | 2003-11-26 | Drying process for low-k dielectric films |
Publications (2)
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009510768A (ja) * | 2005-09-30 | 2009-03-12 | 東京エレクトロン株式会社 | バッチの加工システムを使用する低い比誘電率のフィルムの処理 |
JP2009065170A (ja) * | 2007-09-07 | 2009-03-26 | Interuniv Micro Electronica Centrum Vzw | 希ガスクリーニングステップの追加によって改善したプラズマチャンバ壁のクリーニング |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7060330B2 (en) * | 2002-05-08 | 2006-06-13 | Applied Materials, Inc. | Method for forming ultra low k films using electron beam |
US6936551B2 (en) * | 2002-05-08 | 2005-08-30 | Applied Materials Inc. | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
US6913992B2 (en) * | 2003-03-07 | 2005-07-05 | Applied Materials, Inc. | Method of modifying interlayer adhesion |
US20050250346A1 (en) | 2004-05-06 | 2005-11-10 | Applied Materials, Inc. | Process and apparatus for post deposition treatment of low k dielectric materials |
US20060251827A1 (en) * | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | Tandem uv chamber for curing dielectric materials |
US20060249175A1 (en) * | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | High efficiency UV curing system |
US7501355B2 (en) * | 2006-06-29 | 2009-03-10 | Applied Materials, Inc. | Decreasing the etch rate of silicon nitride by carbon addition |
US7598183B2 (en) * | 2006-09-20 | 2009-10-06 | Applied Materials, Inc. | Bi-layer capping of low-K dielectric films |
US10811370B2 (en) | 2018-04-24 | 2020-10-20 | Cree, Inc. | Packaged electronic circuits having moisture protection encapsulation and methods of forming same |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4341592A (en) * | 1975-08-04 | 1982-07-27 | Texas Instruments Incorporated | Method for removing photoresist layer from substrate by ozone treatment |
US4885047A (en) * | 1986-08-11 | 1989-12-05 | Fusion Systems Corporation | Apparatus for photoresist stripping |
DE69012727T2 (de) * | 1989-03-31 | 1995-02-09 | Canon Kk | Verfahren zur herstellung eines polykristallinen filmes mittels chemischen dampfniederschlags. |
CA2032763C (en) * | 1990-12-20 | 2001-08-21 | Mitel Corporation | Prevention of via poisoning by glow discharge induced desorption |
US5290383A (en) * | 1991-03-24 | 1994-03-01 | Tokyo Electron Limited | Plasma-process system with improved end-point detecting scheme |
US5498308A (en) * | 1994-02-25 | 1996-03-12 | Fusion Systems Corp. | Plasma asher with microwave trap |
US5705232A (en) * | 1994-09-20 | 1998-01-06 | Texas Instruments Incorporated | In-situ coat, bake and cure of dielectric material processing system for semiconductor manufacturing |
US6203582B1 (en) * | 1996-07-15 | 2001-03-20 | Semitool, Inc. | Modular semiconductor workpiece processing tool |
KR100219562B1 (ko) * | 1996-10-28 | 1999-09-01 | 윤종용 | 반도체장치의 다층 배선 형성방법 |
US20010051082A1 (en) * | 1997-09-05 | 2001-12-13 | Kirkpatrick Thomas I. | Cost effective modular-linear wafer processing |
US6053687A (en) * | 1997-09-05 | 2000-04-25 | Applied Materials, Inc. | Cost effective modular-linear wafer processing |
US5866945A (en) * | 1997-10-16 | 1999-02-02 | Advanced Micro Devices | Borderless vias with HSQ gap filled patterned metal layers |
JPH11279773A (ja) * | 1998-03-27 | 1999-10-12 | Tomoo Ueno | 成膜方法 |
US6021672A (en) * | 1998-09-18 | 2000-02-08 | Windbond Electronics Corp. | Simultaneous in-situ optical sensing of pressure and etch rate in plasma etch chamber |
US6328809B1 (en) * | 1998-10-09 | 2001-12-11 | Scp Global Technologies, Inc. | Vapor drying system and method |
US6610150B1 (en) * | 1999-04-02 | 2003-08-26 | Asml Us, Inc. | Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system |
US6452275B1 (en) * | 1999-06-09 | 2002-09-17 | Alliedsignal Inc. | Fabrication of integrated circuits with borderless vias |
US6235453B1 (en) * | 1999-07-07 | 2001-05-22 | Advanced Micro Devices, Inc. | Low-k photoresist removal process |
US6281135B1 (en) * | 1999-08-05 | 2001-08-28 | Axcelis Technologies, Inc. | Oxygen free plasma stripping process |
US6495825B1 (en) * | 1999-12-22 | 2002-12-17 | International Business Machines Corporation | Apparatus for photo exposure of materials with subsequent capturing of volatiles for analysis |
US20010048867A1 (en) * | 2000-03-29 | 2001-12-06 | Lebar Technology, Inc. | Method and apparatus for processing semiconductor wafers |
US6319809B1 (en) * | 2000-07-12 | 2001-11-20 | Taiwan Semiconductor Manfacturing Company | Method to reduce via poison in low-k Cu dual damascene by UV-treatment |
JP4043705B2 (ja) * | 2000-09-27 | 2008-02-06 | 株式会社東芝 | 半導体装置の製造方法、ウェハ処理装置、及びウェハ保管箱 |
US6720247B2 (en) * | 2000-12-14 | 2004-04-13 | Texas Instruments Incorporated | Pre-pattern surface modification for low-k dielectrics using A H2 plasma |
US6303524B1 (en) * | 2001-02-20 | 2001-10-16 | Mattson Thermal Products Inc. | High temperature short time curing of low dielectric constant materials using rapid thermal processing techniques |
US6503840B2 (en) * | 2001-05-02 | 2003-01-07 | Lsi Logic Corporation | Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoning |
JP3739325B2 (ja) * | 2001-09-20 | 2006-01-25 | 株式会社日立製作所 | 有機絶縁膜のエッチング方法 |
-
2002
- 2002-11-26 US US10/065,861 patent/US20040099283A1/en not_active Abandoned
-
2003
- 2003-11-26 JP JP2004555813A patent/JP4359847B2/ja not_active Expired - Fee Related
- 2003-11-26 WO PCT/US2003/038019 patent/WO2004049073A2/en active Application Filing
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009510768A (ja) * | 2005-09-30 | 2009-03-12 | 東京エレクトロン株式会社 | バッチの加工システムを使用する低い比誘電率のフィルムの処理 |
JP2009065170A (ja) * | 2007-09-07 | 2009-03-26 | Interuniv Micro Electronica Centrum Vzw | 希ガスクリーニングステップの追加によって改善したプラズマチャンバ壁のクリーニング |
Also Published As
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US20040099283A1 (en) | 2004-05-27 |
JP4359847B2 (ja) | 2009-11-11 |
WO2004049073A3 (en) | 2004-11-18 |
WO2004049073A2 (en) | 2004-06-10 |
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