JP2006505949A - 半導体デバイスのゲートのクリティカルディメンションを改善するためのゲート材料のプレーナ化 - Google Patents

半導体デバイスのゲートのクリティカルディメンションを改善するためのゲート材料のプレーナ化 Download PDF

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Publication number
JP2006505949A
JP2006505949A JP2004551525A JP2004551525A JP2006505949A JP 2006505949 A JP2006505949 A JP 2006505949A JP 2004551525 A JP2004551525 A JP 2004551525A JP 2004551525 A JP2004551525 A JP 2004551525A JP 2006505949 A JP2006505949 A JP 2006505949A
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Prior art keywords
gate
polysilicon
depositing
fin
layer
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JP2004551525A
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Japanese (ja)
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JP2006505949A5 (enExample
Inventor
エス． アーメッド シブリー
イー． タベリー サイラス
ワン ハイホン
ユ ビン
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Publication of JP2006505949A publication Critical patent/JP2006505949A/ja
Publication of JP2006505949A5 publication Critical patent/JP2006505949A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6212—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies having non-rectangular cross-sections

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2004551525A 2002-11-08 2003-10-14 半導体デバイスのゲートのクリティカルディメンションを改善するためのゲート材料のプレーナ化 Pending JP2006505949A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/290,276 US6787439B2 (en) 2002-11-08 2002-11-08 Method using planarizing gate material to improve gate critical dimension in semiconductor devices
PCT/US2003/032655 WO2004044973A1 (en) 2002-11-08 2003-10-14 Planarizing gate material to improve gate critical dimension in semiconductor devices

Publications (2)

Publication Number Publication Date
JP2006505949A true JP2006505949A (ja) 2006-02-16
JP2006505949A5 JP2006505949A5 (enExample) 2006-11-30

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JP2004551525A Pending JP2006505949A (ja) 2002-11-08 2003-10-14 半導体デバイスのゲートのクリティカルディメンションを改善するためのゲート材料のプレーナ化

Country Status (8)

Country Link
US (1) US6787439B2 (enExample)
EP (1) EP1559137A1 (enExample)
JP (1) JP2006505949A (enExample)
KR (1) KR101062029B1 (enExample)
CN (1) CN100505182C (enExample)
AU (1) AU2003282842A1 (enExample)
TW (1) TWI315548B (enExample)
WO (1) WO2004044973A1 (enExample)

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JP2007500952A (ja) * 2003-06-12 2007-01-18 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 化学機械研磨プレーナ化のためのデュアルシリコンゲート層を有するｆｉｎｆｅｔ
JP2018510503A (ja) * 2015-02-24 2018-04-12 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 電子及び正孔移動度向上のためのデュアル・フィン集積

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US7091068B1 (en) * 2002-12-06 2006-08-15 Advanced Micro Devices, Inc. Planarizing sacrificial oxide to improve gate critical dimension in semiconductor devices
US6872647B1 (en) * 2003-05-06 2005-03-29 Advanced Micro Devices, Inc. Method for forming multiple fins in a semiconductor device
US6909151B2 (en) * 2003-06-27 2005-06-21 Intel Corporation Nonplanar device with stress incorporation layer and method of fabrication
US7456476B2 (en) * 2003-06-27 2008-11-25 Intel Corporation Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
US7105390B2 (en) * 2003-12-30 2006-09-12 Intel Corporation Nonplanar transistors with metal gate electrodes
US7624192B2 (en) * 2003-12-30 2009-11-24 Microsoft Corporation Framework for user interaction with multiple network devices
US7268058B2 (en) * 2004-01-16 2007-09-11 Intel Corporation Tri-gate transistors and methods to fabricate same
US7115947B2 (en) * 2004-03-18 2006-10-03 International Business Machines Corporation Multiple dielectric finfet structure and method
US7154118B2 (en) 2004-03-31 2006-12-26 Intel Corporation Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
CN100461373C (zh) * 2004-05-20 2009-02-11 中芯国际集成电路制造(上海)有限公司 化学机械抛光用于接合多晶硅插拴制造方法及其结构
US7579280B2 (en) * 2004-06-01 2009-08-25 Intel Corporation Method of patterning a film
US7042009B2 (en) 2004-06-30 2006-05-09 Intel Corporation High mobility tri-gate devices and methods of fabrication
US7348284B2 (en) 2004-08-10 2008-03-25 Intel Corporation Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow
US7071064B2 (en) * 2004-09-23 2006-07-04 Intel Corporation U-gate transistors and methods of fabrication
US7332439B2 (en) 2004-09-29 2008-02-19 Intel Corporation Metal gate transistors with epitaxial source and drain regions
US7422946B2 (en) * 2004-09-29 2008-09-09 Intel Corporation Independently accessed double-gate and tri-gate transistors in same process flow
US7361958B2 (en) * 2004-09-30 2008-04-22 Intel Corporation Nonplanar transistors with metal gate electrodes
US20060086977A1 (en) 2004-10-25 2006-04-27 Uday Shah Nonplanar device with thinned lower body portion and method of fabrication
US7193279B2 (en) * 2005-01-18 2007-03-20 Intel Corporation Non-planar MOS structure with a strained channel region
US7518196B2 (en) 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US20060202266A1 (en) 2005-03-14 2006-09-14 Marko Radosavljevic Field effect transistor with metal source/drain regions
US7563701B2 (en) * 2005-03-31 2009-07-21 Intel Corporation Self-aligned contacts for transistors
JP4648096B2 (ja) * 2005-06-03 2011-03-09 株式会社東芝 半導体装置の製造方法
US7858481B2 (en) 2005-06-15 2010-12-28 Intel Corporation Method for fabricating transistor with thinned channel
US7547637B2 (en) 2005-06-21 2009-06-16 Intel Corporation Methods for patterning a semiconductor film
US7279375B2 (en) 2005-06-30 2007-10-09 Intel Corporation Block contact architectures for nanoscale channel transistors
US7402875B2 (en) 2005-08-17 2008-07-22 Intel Corporation Lateral undercut of metal gate in SOI device
US20070090416A1 (en) * 2005-09-28 2007-04-26 Doyle Brian S CMOS devices with a single work function gate electrode and method of fabrication
US7479421B2 (en) 2005-09-28 2009-01-20 Intel Corporation Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby
US7485503B2 (en) 2005-11-30 2009-02-03 Intel Corporation Dielectric interface for group III-V semiconductor device
US7396711B2 (en) * 2005-12-27 2008-07-08 Intel Corporation Method of fabricating a multi-cornered film
US20070152266A1 (en) * 2005-12-29 2007-07-05 Intel Corporation Method and structure for reducing the external resistance of a three-dimensional transistor through use of epitaxial layers
US7544594B2 (en) * 2006-06-28 2009-06-09 Intel Corporation Method of forming a transistor having gate protection and transistor formed according to the method
US8143646B2 (en) 2006-08-02 2012-03-27 Intel Corporation Stacking fault and twin blocking barrier for integrating III-V on Si
US7435671B2 (en) * 2006-08-18 2008-10-14 International Business Machines Corporation Trilayer resist scheme for gate etching applications
EP2070533B1 (en) * 2007-12-11 2014-05-07 Apoteknos Para La Piel, s.l. Use of a compound derived from P-hydroxyphenyl propionic acid for the treatment of psoriasis
US8362566B2 (en) 2008-06-23 2013-01-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
JP2010258124A (ja) * 2009-04-23 2010-11-11 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
CN102386065A (zh) * 2010-09-01 2012-03-21 无锡华润上华半导体有限公司 改善光刻临界尺寸均匀性的方法
US9041125B2 (en) * 2013-03-11 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Fin shape for fin field-effect transistors and method of forming
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JP2002270850A (ja) * 2001-03-13 2002-09-20 National Institute Of Advanced Industrial & Technology 二重ゲート電界効果トランジスタ

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JP2000208393A (ja) * 1999-01-12 2000-07-28 Asahi Kasei Microsystems Kk 半導体装置の製造方法
JP2002270850A (ja) * 2001-03-13 2002-09-20 National Institute Of Advanced Industrial & Technology 二重ゲート電界効果トランジスタ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007500952A (ja) * 2003-06-12 2007-01-18 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 化学機械研磨プレーナ化のためのデュアルシリコンゲート層を有するｆｉｎｆｅｔ
JP2018510503A (ja) * 2015-02-24 2018-04-12 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 電子及び正孔移動度向上のためのデュアル・フィン集積

Also Published As

Publication number Publication date
AU2003282842A1 (en) 2004-06-03
CN100505182C (zh) 2009-06-24
KR101062029B1 (ko) 2011-09-05
WO2004044973A1 (en) 2004-05-27
TWI315548B (en) 2009-10-01
CN1711630A (zh) 2005-12-21
US6787439B2 (en) 2004-09-07
EP1559137A1 (en) 2005-08-03
US20040092062A1 (en) 2004-05-13
KR20050062655A (ko) 2005-06-23
TW200414326A (en) 2004-08-01

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