JP2006500752A - ロードロック真空コンダクタンス制限アパチャー - Google Patents
ロードロック真空コンダクタンス制限アパチャー Download PDFInfo
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- JP2006500752A JP2006500752A JP2004540188A JP2004540188A JP2006500752A JP 2006500752 A JP2006500752 A JP 2006500752A JP 2004540188 A JP2004540188 A JP 2004540188A JP 2004540188 A JP2004540188 A JP 2004540188A JP 2006500752 A JP2006500752 A JP 2006500752A
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- Prior art keywords
- load lock
- cover
- load
- slot
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000002347 injection Methods 0.000 claims abstract description 26
- 239000007924 injection Substances 0.000 claims abstract description 26
- 238000002513 implantation Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000002955 isolation Methods 0.000 abstract description 9
- 238000011084 recovery Methods 0.000 abstract description 7
- 238000012546 transfer Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 49
- 238000012545 processing Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 6
- 239000007943 implant Substances 0.000 description 5
- 238000001802 infusion Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
- H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
burst)が起こりうるので、注入を行うための許容レベルに、つまり、例えば注入ドーズ再現性、注入均一性、エネルギーコンタミネーション、及び/又は加工機スループットといった所望の処理パラメーターを達成できるレベルに、チャンバ内の圧力を復帰するために、真空状態回復期間が必要となることがある。従って、初注入までの時間、つまり、ロードロック・ポンプダウンの開始から注入開始までの時間には、ロードロック・ポンプダウン時間と処理チャンバの真空状態回復時間とを含めることができる。
発明の概要
burst)が発生することがある。
in place)ロードロック・アパチャーに比べ、将来の変更への柔軟性を向上できる。
Claims (15)
- イオン注入装置のロードロックと組み合わせる装置であって、
前記ロードロックのスロットに隣接したカバーを含み、
前記カバーが、前記ロードロック内のロードにアクセスするためのアパチャーを含むと共に、前記ロードロックと前記イオン注入装置の注入チャンバとの間の開口部を縮小する、装置。 - 前記カバーが前記ロードロックに取り付けられている、請求項1に記載の装置。
- 前記カバーが、前記ロードロックに着脱可能に取り付けられている、請求項2に記載の装置。
- 前記スロットに対して直角方向での前記カバーの寸法が、前記スロットに対して最大化されている、請求項1に記載の装置。
- 前記アパチャーのサイズが調節可能である、請求項4に記載の装置。
- 前記アパチャーが、前記ロードを前記ロードロックと前記注入チャンバとの間で取り扱うためのクリアランスを維持できるようにサイズ決定されている、請求項4に記載の装置。
- 前記カバーが前記ロードロックに取り付けられている、請求項6に記載の装置。
- 前記カバーが、前記ロードロックに着脱可能に取り付けられている、請求項7に記載の装置。
- 前記アパチャーのサイズが調節可能である、請求項1に記載の装置。
-
前記アパチャーが、前記ロードを前記ロードロックと前記注入チャンバとの間で取り扱うためのクリアランスを維持できるようにサイズ決定されている、請求項1に記載の装置。 - イオン注入装置のロードロックと真空チャンバとの間における圧力急上昇を減少させるための方法であって、
それ自身を貫通したアパチャーを備えたカバーで前記ロードロックのスロットを覆う段階と、
前記アパチャーのサイズを縮小しつつ、前記ロードロックと前記真空チャンバとの間でロードを移動するために前記ロードへのアクセスを維持する段階と、
前記ロードロックの前記スロットに対して直角方向で測定した前記カバーの奥行きを増加する段階とを含む、方法。 - 前記ロードがウェーハである、請求項11に記載の方法。
- 前記カバーが前記ロードロックに取り付けられている、請求項11に記載の方法。
- 前記カバーが、前記ロードロックに着脱可能に取り付けられている、請求項11に記載の方法。
- 前記スロットに対して直角方向での前記カバーの寸法が、前記スロットに対して最大化されている、請求項11に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/254,229 US6781139B2 (en) | 2002-09-25 | 2002-09-25 | Load lock vacuum conductance limiting aperture |
PCT/US2003/029972 WO2004030017A1 (en) | 2002-09-25 | 2003-09-24 | Load lock vacuum conductance limiting aperture |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006500752A true JP2006500752A (ja) | 2006-01-05 |
JP4583177B2 JP4583177B2 (ja) | 2010-11-17 |
Family
ID=31993302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004540188A Expired - Lifetime JP4583177B2 (ja) | 2002-09-25 | 2003-09-24 | ロードロック真空コンダクタンス制限アパチャー |
Country Status (6)
Country | Link |
---|---|
US (1) | US6781139B2 (ja) |
EP (1) | EP1547120A1 (ja) |
JP (1) | JP4583177B2 (ja) |
KR (1) | KR101162368B1 (ja) |
AU (1) | AU2003272655A1 (ja) |
WO (1) | WO2004030017A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016004898A (ja) * | 2014-06-17 | 2016-01-12 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置及びイオン注入装置の制御方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4766156B2 (ja) * | 2009-06-11 | 2011-09-07 | 日新イオン機器株式会社 | イオン注入装置 |
WO2015017395A1 (en) * | 2013-07-30 | 2015-02-05 | Board Of Regents, The University Of Texas System | Sample transfer to high vacuum transition flow |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05205686A (ja) * | 1992-01-27 | 1993-08-13 | Nippon Telegr & Teleph Corp <Ntt> | 差動排気抵抗装置 |
JPH0636198U (ja) * | 1992-10-06 | 1994-05-13 | 日新電機株式会社 | 真空処理装置 |
JPH07176592A (ja) * | 1993-12-17 | 1995-07-14 | Tel Varian Ltd | 被処理体の搬入、搬出装置 |
JPH0862399A (ja) * | 1994-08-25 | 1996-03-08 | Nikon Corp | 真空装置 |
JP2002176094A (ja) * | 2000-12-06 | 2002-06-21 | Sony Corp | 半導体製造装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6530732B1 (en) * | 1997-08-12 | 2003-03-11 | Brooks Automation, Inc. | Single substrate load lock with offset cool module and buffer chamber |
US6543981B1 (en) * | 2001-03-30 | 2003-04-08 | Lam Research Corp. | Apparatus and method for creating an ultra-clean mini-environment through localized air flow augmentation |
-
2002
- 2002-09-25 US US10/254,229 patent/US6781139B2/en not_active Expired - Lifetime
-
2003
- 2003-09-24 WO PCT/US2003/029972 patent/WO2004030017A1/en not_active Application Discontinuation
- 2003-09-24 EP EP03754850A patent/EP1547120A1/en not_active Withdrawn
- 2003-09-24 AU AU2003272655A patent/AU2003272655A1/en not_active Abandoned
- 2003-09-24 JP JP2004540188A patent/JP4583177B2/ja not_active Expired - Lifetime
- 2003-09-24 KR KR1020057005061A patent/KR101162368B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05205686A (ja) * | 1992-01-27 | 1993-08-13 | Nippon Telegr & Teleph Corp <Ntt> | 差動排気抵抗装置 |
JPH0636198U (ja) * | 1992-10-06 | 1994-05-13 | 日新電機株式会社 | 真空処理装置 |
JPH07176592A (ja) * | 1993-12-17 | 1995-07-14 | Tel Varian Ltd | 被処理体の搬入、搬出装置 |
JPH0862399A (ja) * | 1994-08-25 | 1996-03-08 | Nikon Corp | 真空装置 |
JP2002176094A (ja) * | 2000-12-06 | 2002-06-21 | Sony Corp | 半導体製造装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016004898A (ja) * | 2014-06-17 | 2016-01-12 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置及びイオン注入装置の制御方法 |
US9666413B2 (en) | 2014-06-17 | 2017-05-30 | Sumitomo Heavy Industries Ion Technology Co., Ltd. | Ion implantation apparatus and control method for ion implantation apparatus |
Also Published As
Publication number | Publication date |
---|---|
US6781139B2 (en) | 2004-08-24 |
US20040056213A1 (en) | 2004-03-25 |
WO2004030017A1 (en) | 2004-04-08 |
AU2003272655A1 (en) | 2004-04-19 |
EP1547120A1 (en) | 2005-06-29 |
JP4583177B2 (ja) | 2010-11-17 |
KR20050057567A (ko) | 2005-06-16 |
KR101162368B1 (ko) | 2012-07-04 |
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