JP2006344706A5 - - Google Patents

Download PDF

Info

Publication number
JP2006344706A5
JP2006344706A5 JP2005167713A JP2005167713A JP2006344706A5 JP 2006344706 A5 JP2006344706 A5 JP 2006344706A5 JP 2005167713 A JP2005167713 A JP 2005167713A JP 2005167713 A JP2005167713 A JP 2005167713A JP 2006344706 A5 JP2006344706 A5 JP 2006344706A5
Authority
JP
Japan
Prior art keywords
thin film
zinc oxide
conductive layer
transparent conductive
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005167713A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006344706A (ja
JP4794220B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005167713A priority Critical patent/JP4794220B2/ja
Priority claimed from JP2005167713A external-priority patent/JP4794220B2/ja
Publication of JP2006344706A publication Critical patent/JP2006344706A/ja
Publication of JP2006344706A5 publication Critical patent/JP2006344706A5/ja
Application granted granted Critical
Publication of JP4794220B2 publication Critical patent/JP4794220B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2005167713A 2005-06-08 2005-06-08 フォトセンサ Expired - Fee Related JP4794220B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005167713A JP4794220B2 (ja) 2005-06-08 2005-06-08 フォトセンサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005167713A JP4794220B2 (ja) 2005-06-08 2005-06-08 フォトセンサ

Publications (3)

Publication Number Publication Date
JP2006344706A JP2006344706A (ja) 2006-12-21
JP2006344706A5 true JP2006344706A5 (enExample) 2008-03-27
JP4794220B2 JP4794220B2 (ja) 2011-10-19

Family

ID=37641459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005167713A Expired - Fee Related JP4794220B2 (ja) 2005-06-08 2005-06-08 フォトセンサ

Country Status (1)

Country Link
JP (1) JP4794220B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5157161B2 (ja) * 2006-12-27 2013-03-06 カシオ計算機株式会社 フォトセンサ
JP2009302319A (ja) * 2008-06-13 2009-12-24 Rohm Co Ltd 分光機能を有する光電変換素子およびこれを用いたイメージセンサー
CN101958357B (zh) * 2009-04-21 2013-07-17 华映光电股份有限公司 感光组件
JP6048718B2 (ja) * 2011-11-07 2016-12-21 国立大学法人 名古屋工業大学 紫外線受光素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3898330B2 (ja) * 1998-03-12 2007-03-28 カシオ計算機株式会社 読取装置
JP4306041B2 (ja) * 1999-08-25 2009-07-29 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子
JP2001111076A (ja) * 1999-10-08 2001-04-20 Tdk Corp コーティング体および太陽電池モジュール

Similar Documents

Publication Publication Date Title
TWI814369B (zh) 感光元件基板及其製造方法
JP2008171871A5 (enExample)
US8791537B2 (en) Flexible radiation detectors
CN106449861B (zh) 光传感器元件和光电转换装置
JP4183990B2 (ja) 薄膜フォトトランジスタ及びそれを用いたアクティブマトリクス基板並びにそれを用いた画像読み取り装置。
TW200816531A (en) System for displaying images and method for fabricating the same
JP2011091382A5 (ja) 半導体装置
JP2010153834A5 (ja) 半導体装置
EP1914808A3 (en) Solar cell structure with localized doping of cap layer
JP2009260294A5 (enExample)
JP2009170900A5 (ja) 半導体装置、及びそれを有する表示装置
JP2010183060A5 (enExample)
JP2010183022A5 (ja) 半導体装置
JP2010087471A5 (enExample)
JP2011029625A5 (enExample)
JP5441643B2 (ja) 光センサー、光センサーアレイ、光センサーの駆動方法、及び光センサーアレイの駆動方法
JP2007529112A5 (enExample)
CN104183655B (zh) 感测装置
TW200635100A (en) Counter electrode for photoelectric conversion element and photoelectric conversion element
CN108878572A (zh) 感光元件、光电传感探测基板及其制造方法
JP2005150105A5 (enExample)
JP2013093543A5 (enExample)
CN104716152A (zh) X射线平板探测器及其制备方法与白色绝缘材料
JP5960398B2 (ja) 薄膜トランジスタセンサー及び薄膜トランジスタセンサーの製造方法
US11690273B2 (en) Photo transistor and display device including the same