JP2006342386A - 真空装置のシール構造 - Google Patents
真空装置のシール構造 Download PDFInfo
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- JP2006342386A JP2006342386A JP2005168231A JP2005168231A JP2006342386A JP 2006342386 A JP2006342386 A JP 2006342386A JP 2005168231 A JP2005168231 A JP 2005168231A JP 2005168231 A JP2005168231 A JP 2005168231A JP 2006342386 A JP2006342386 A JP 2006342386A
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- 238000001816 cooling Methods 0.000 claims abstract description 40
- 239000003507 refrigerant Substances 0.000 claims abstract description 16
- 239000007787 solid Substances 0.000 claims abstract description 11
- 239000013013 elastic material Substances 0.000 claims abstract description 7
- 238000007789 sealing Methods 0.000 claims description 31
- 238000005192 partition Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 abstract description 73
- 238000000034 method Methods 0.000 abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 9
- 239000001301 oxygen Substances 0.000 abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 20
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 239000006227 byproduct Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002826 coolant Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 230000008602 contraction Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229920006169 Perfluoroelastomer Polymers 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16J—PISTONS; CYLINDERS; SEALINGS
- F16J15/00—Sealings
- F16J15/02—Sealings between relatively-stationary surfaces
- F16J15/06—Sealings between relatively-stationary surfaces with solid packing compressed between sealing surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16J—PISTONS; CYLINDERS; SEALINGS
- F16J15/00—Sealings
- F16J15/16—Sealings between relatively-moving surfaces
- F16J15/32—Sealings between relatively-moving surfaces with elastic sealings, e.g. O-rings
- F16J15/324—Arrangements for lubrication or cooling of the sealing itself
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Gasket Seals (AREA)
Abstract
【解決手段】冷媒供給口68と冷媒排出口69を有する環状の冷却パイプ65と、この冷却パイプ65に着脱可能に被冠されるOリング64とでシール構造60を構成する。Oリング64は、耐熱、耐食性に優れた弾性材料によって中空のリングに形成されて外周面にスリット67が全周にわたって形成されており、中空部66内に冷却パイプ65が組み込まれる。固体内部を透過する気体の透過率は温度依存性を有しているため、真空容器を真空引きして使用する際、冷却パイプ65に冷媒を供給してOリング64を内側から冷却し、Oリング64を透過する酸素の透過量を少なくする。
【選択図】 図5
Description
シール部材は冷却パイプに対して着脱可能に取付けられているので、経年変化等によって劣化した場合、新しいものと容易に交換することができる。
フッ素樹脂製のシール部材は耐熱性、耐食性に優れ、昇降温を繰り返す半導体デバイス製造用の成膜装置、熱処理装置等の真空装置のシール構造に用いて好適である。
図1は本発明に係るシール構造を備えた真空装置の断面図、図2は同装置のシャワーヘッド上部を示す平面図、図3は同シャワーヘッドの断面図、図4は同シール構造の拡大断面図、図5は同シール構造の一部を破断して示す平面図、図6はシール部材の断面図である。
図4〜図6において、前記チャンバー2と蓋体3の互いに密接する接合面61a,61bはシール面を形成しており、このシール面を本発明に係るシール構造60によって気密にシールしている。
この実施の形態においては、チャンバー2のシール面61aに2つの環状溝62a,62bを形成し、外側の環状溝62aに図4に示したシール構造60を組込み、内側の環状溝62bには通常用いられているOリング70を組込み、2つのOリング64,70によってチャンバー2と蓋体3のシール面61a,61bを気密にシールするようにしたものである。通常のOリング70は、ゴム、フッ素樹脂等の弾性材料によって断面形状が円形で中空部を有さない中実のリング状に形成されている。2つの環状溝62a,62bは、仕切壁71によって互いに仕切られている。なお、真空装置1自体の構造とシール構造60は上記した実施の形態と同一であるため、同一構成部品については同一符号をもって示し、その説明を省略する。
Claims (5)
- 被処理体を収納する真空容器と、この真空容器の開口部を閉塞する部材とのシール面間に弾性材料からなるシール部材を介在させ、このシール部材を前記真空容器と前記部材とで挟持し弾性変形させることにより前記開口部を気密に封止する真空装置のシール構造において、
前記シール部材を内部に中空部を有するリング状に形成し、前記中空部内に冷媒供給口と冷媒排出口を有し冷媒が供給される環状の冷却パイプを組み込んだことを特徴とする真空装置のシール構造。 - シール部材の外周にスリットを全周にわたって形成し、前記シール部材を冷却パイプに着脱可能に被覆したことを特徴とする請求項1記載の真空装置のシール構造。
- 前記シール部材がフッ素樹脂からなることを特徴とする請求項1または2記載の真空装置のシール構造。
- 真空容器と、この真空容器の開口部を閉塞する部材とのシール面間であって、前記冷却パイプが組み込まれたシール部材より内側に、弾性部材からなり中空部を有さない中実のリング状シール部材をさらに配設したことを特徴とする請求項1,2,3のうちのいずれか1つに記載の真空装置のシール構造。
- 前記冷却パイプが組み込まれたシール部材と弾性部材からなる中実のリング状シール部材が組み込まれる環状溝は、仕切壁によって仕切られていることを特徴とする請求項4記載の真空装置のシール構造。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005168231A JP4943669B2 (ja) | 2005-06-08 | 2005-06-08 | 真空装置のシール構造 |
KR1020077028283A KR100966389B1 (ko) | 2005-06-08 | 2006-06-07 | 진공 장치의 밀봉 구조 |
CN2006800014421A CN101091006B (zh) | 2005-06-08 | 2006-06-07 | 真空装置的密封结构 |
PCT/JP2006/311429 WO2006132274A1 (ja) | 2005-06-08 | 2006-06-07 | 真空装置のシール構造 |
US11/951,635 US8021488B2 (en) | 2005-06-08 | 2007-12-06 | Sealing structure of vacuum device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005168231A JP4943669B2 (ja) | 2005-06-08 | 2005-06-08 | 真空装置のシール構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006342386A true JP2006342386A (ja) | 2006-12-21 |
JP4943669B2 JP4943669B2 (ja) | 2012-05-30 |
Family
ID=37498473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005168231A Expired - Fee Related JP4943669B2 (ja) | 2005-06-08 | 2005-06-08 | 真空装置のシール構造 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8021488B2 (ja) |
JP (1) | JP4943669B2 (ja) |
KR (1) | KR100966389B1 (ja) |
CN (1) | CN101091006B (ja) |
WO (1) | WO2006132274A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008311346A (ja) * | 2007-06-13 | 2008-12-25 | Fujitsu Microelectronics Ltd | 半導体製造装置、半導体装置の製造方法、及びこれらに使用するシール部材 |
KR101204160B1 (ko) | 2007-06-19 | 2012-11-22 | 도쿄엘렉트론가부시키가이샤 | 진공 처리 장치 |
US8414705B2 (en) | 2008-01-22 | 2013-04-09 | Tokyo Electron Limited | Seal mechanism, seal trench, seal member, and substrate processing apparatus |
JP2014114849A (ja) * | 2012-12-07 | 2014-06-26 | Ihi Corp | 2重シール部のシール機構 |
WO2024062663A1 (ja) * | 2022-09-20 | 2024-03-28 | 株式会社Kokusai Electric | 基板処理装置、ガス供給ユニット、半導体装置の製造方法及びプログラム |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4943669B2 (ja) * | 2005-06-08 | 2012-05-30 | 東京エレクトロン株式会社 | 真空装置のシール構造 |
JP5512187B2 (ja) * | 2009-08-04 | 2014-06-04 | 光洋サーモシステム株式会社 | 熱処理装置 |
CN101881335B (zh) * | 2010-03-23 | 2012-02-01 | 东莞宏威数码机械有限公司 | 多层橡胶密封圈密封装置 |
KR200457940Y1 (ko) * | 2011-06-08 | 2012-01-12 | 신범호 | 매입노출 겸용 엘이디 등기구 |
US9869392B2 (en) | 2011-10-20 | 2018-01-16 | Lam Research Corporation | Edge seal for lower electrode assembly |
US9859142B2 (en) * | 2011-10-20 | 2018-01-02 | Lam Research Corporation | Edge seal for lower electrode assembly |
CN104455408A (zh) * | 2013-09-18 | 2015-03-25 | 李俊贤 | 压力容器及其构成气密压力环境的方法 |
US10090211B2 (en) | 2013-12-26 | 2018-10-02 | Lam Research Corporation | Edge seal for lower electrode assembly |
US11384432B2 (en) * | 2015-04-22 | 2022-07-12 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
KR102156389B1 (ko) * | 2016-05-20 | 2020-09-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 처리를 위한 가스 분배 샤워헤드 |
CN107061733A (zh) * | 2016-12-30 | 2017-08-18 | 泰州前进科技有限公司 | 一种真空槽 |
JP6809917B2 (ja) | 2017-01-31 | 2021-01-06 | 株式会社バルカー | 複合シール材 |
US10604995B2 (en) * | 2017-06-22 | 2020-03-31 | Sejong Pharmatech Co., Ltd. | Sealing door and method of forming channel |
KR102176396B1 (ko) * | 2019-05-15 | 2020-11-09 | (주) 예스티 | 공정 처리용 챔버 장치 |
FI4013905T3 (fi) | 2019-08-12 | 2023-05-19 | Kurt J Lesker Company | Erittäin puhtaat olosuhteet atomimittakaavan prosessointiin |
KR20210044568A (ko) | 2019-10-15 | 2021-04-23 | 삼성전자주식회사 | 식각 장치 |
US11705312B2 (en) * | 2020-12-26 | 2023-07-18 | Applied Materials, Inc. | Vertically adjustable plasma source |
US20220260156A1 (en) * | 2021-02-12 | 2022-08-18 | Kla Corporation | Dual Vacuum Seal |
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JP4943669B2 (ja) * | 2005-06-08 | 2012-05-30 | 東京エレクトロン株式会社 | 真空装置のシール構造 |
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-
2005
- 2005-06-08 JP JP2005168231A patent/JP4943669B2/ja not_active Expired - Fee Related
-
2006
- 2006-06-07 CN CN2006800014421A patent/CN101091006B/zh not_active Expired - Fee Related
- 2006-06-07 KR KR1020077028283A patent/KR100966389B1/ko not_active IP Right Cessation
- 2006-06-07 WO PCT/JP2006/311429 patent/WO2006132274A1/ja active Application Filing
-
2007
- 2007-12-06 US US11/951,635 patent/US8021488B2/en not_active Expired - Fee Related
Patent Citations (5)
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JPH0758048A (ja) * | 1993-08-19 | 1995-03-03 | Tokyo Electron Ltd | 熱処理装置 |
JP2000106298A (ja) * | 1998-09-28 | 2000-04-11 | Tokyo Electron Ltd | プラズマ処理装置 |
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JP2008311346A (ja) * | 2007-06-13 | 2008-12-25 | Fujitsu Microelectronics Ltd | 半導体製造装置、半導体装置の製造方法、及びこれらに使用するシール部材 |
KR101204160B1 (ko) | 2007-06-19 | 2012-11-22 | 도쿄엘렉트론가부시키가이샤 | 진공 처리 장치 |
US8414705B2 (en) | 2008-01-22 | 2013-04-09 | Tokyo Electron Limited | Seal mechanism, seal trench, seal member, and substrate processing apparatus |
JP2014114849A (ja) * | 2012-12-07 | 2014-06-26 | Ihi Corp | 2重シール部のシール機構 |
WO2024062663A1 (ja) * | 2022-09-20 | 2024-03-28 | 株式会社Kokusai Electric | 基板処理装置、ガス供給ユニット、半導体装置の製造方法及びプログラム |
Also Published As
Publication number | Publication date |
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CN101091006B (zh) | 2010-12-15 |
KR100966389B1 (ko) | 2010-06-28 |
US8021488B2 (en) | 2011-09-20 |
JP4943669B2 (ja) | 2012-05-30 |
WO2006132274A1 (ja) | 2006-12-14 |
CN101091006A (zh) | 2007-12-19 |
US20080088097A1 (en) | 2008-04-17 |
KR20080006010A (ko) | 2008-01-15 |
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