JP2006332694A - 半導体表面上に金属バンプを形成する方法 - Google Patents

半導体表面上に金属バンプを形成する方法 Download PDF

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Publication number
JP2006332694A
JP2006332694A JP2006200592A JP2006200592A JP2006332694A JP 2006332694 A JP2006332694 A JP 2006332694A JP 2006200592 A JP2006200592 A JP 2006200592A JP 2006200592 A JP2006200592 A JP 2006200592A JP 2006332694 A JP2006332694 A JP 2006332694A
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Japan
Prior art keywords
layer
metal
pillar
solder
depositing
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Pending
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JP2006200592A
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English (en)
Japanese (ja)
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JP2006332694A5 (enExample
Inventor
Lee Jin-Yuan
ジン−ユアン・リー
Shun Rin Muu
ムウ・シュン・リン
Fan Chin-Chen
チン−チェン・ファン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Megica Corp
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Megica Corp
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Publication date
Application filed by Megica Corp filed Critical Megica Corp
Priority to JP2006200592A priority Critical patent/JP2006332694A/ja
Publication of JP2006332694A publication Critical patent/JP2006332694A/ja
Publication of JP2006332694A5 publication Critical patent/JP2006332694A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/1147—Manufacturing methods using a lift-off mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/119—Methods of manufacturing bump connectors involving a specific sequence of method steps
    • H01L2224/11901—Methods of manufacturing bump connectors involving a specific sequence of method steps with repetition of the same manufacturing step
    • H01L2224/11902—Multiple masking steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2006200592A 2006-07-24 2006-07-24 半導体表面上に金属バンプを形成する方法 Pending JP2006332694A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006200592A JP2006332694A (ja) 2006-07-24 2006-07-24 半導体表面上に金属バンプを形成する方法

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Application Number Priority Date Filing Date Title
JP2006200592A JP2006332694A (ja) 2006-07-24 2006-07-24 半導体表面上に金属バンプを形成する方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002056997A Division JP2003258014A (ja) 2002-03-04 2002-03-04 半導体表面上に金属バンプを形成する方法

Publications (2)

Publication Number Publication Date
JP2006332694A true JP2006332694A (ja) 2006-12-07
JP2006332694A5 JP2006332694A5 (enExample) 2008-11-27

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ID=37553969

Family Applications (1)

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JP2006200592A Pending JP2006332694A (ja) 2006-07-24 2006-07-24 半導体表面上に金属バンプを形成する方法

Country Status (1)

Country Link
JP (1) JP2006332694A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015018958A (ja) * 2013-07-11 2015-01-29 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 実装構造体および実装構造体製造方法
JP2015216344A (ja) * 2014-04-21 2015-12-03 新光電気工業株式会社 配線基板及びその製造方法
KR20160102150A (ko) 2013-12-27 2016-08-29 미쓰비시 마테리알 가부시키가이샤 유심 구조 땜납 범프 및 그 제조 방법
JP2017183592A (ja) * 2016-03-31 2017-10-05 株式会社荏原製作所 基板の製造方法及び基板
CN113658930A (zh) * 2020-05-12 2021-11-16 合肥晶合集成电路股份有限公司 一种半导体结构的制备方法及其应用方法
CN113725105A (zh) * 2021-08-24 2021-11-30 日月光半导体制造股份有限公司 半导体封装装置及其制造方法
JP2023022856A (ja) * 2021-08-04 2023-02-16 凸版印刷株式会社 配線基板及び配線基板の製造方法
CN118173454A (zh) * 2024-05-14 2024-06-11 日月新半导体(威海)有限公司 一种3d半导体封装及其制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335313A (ja) * 1992-05-29 1993-12-17 Toshiba Corp インジウムバンプの製造方法
JPH0637093A (ja) * 1992-07-14 1994-02-10 Sanken Electric Co Ltd バンプ電極の形成方法
JPH11163019A (ja) * 1997-12-01 1999-06-18 Seiko Epson Corp 半導体装置およびその製造方法
JP2001093928A (ja) * 1999-09-22 2001-04-06 Toshiba Corp 半導体装置及びその製造方法
JP2001257210A (ja) * 2000-03-10 2001-09-21 Hitachi Ltd 半導体集積回路装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335313A (ja) * 1992-05-29 1993-12-17 Toshiba Corp インジウムバンプの製造方法
JPH0637093A (ja) * 1992-07-14 1994-02-10 Sanken Electric Co Ltd バンプ電極の形成方法
JPH11163019A (ja) * 1997-12-01 1999-06-18 Seiko Epson Corp 半導体装置およびその製造方法
JP2001093928A (ja) * 1999-09-22 2001-04-06 Toshiba Corp 半導体装置及びその製造方法
JP2001257210A (ja) * 2000-03-10 2001-09-21 Hitachi Ltd 半導体集積回路装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015018958A (ja) * 2013-07-11 2015-01-29 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 実装構造体および実装構造体製造方法
KR20160102150A (ko) 2013-12-27 2016-08-29 미쓰비시 마테리알 가부시키가이샤 유심 구조 땜납 범프 및 그 제조 방법
JP2015216344A (ja) * 2014-04-21 2015-12-03 新光電気工業株式会社 配線基板及びその製造方法
JP2017183592A (ja) * 2016-03-31 2017-10-05 株式会社荏原製作所 基板の製造方法及び基板
CN113658930A (zh) * 2020-05-12 2021-11-16 合肥晶合集成电路股份有限公司 一种半导体结构的制备方法及其应用方法
JP2023022856A (ja) * 2021-08-04 2023-02-16 凸版印刷株式会社 配線基板及び配線基板の製造方法
CN113725105A (zh) * 2021-08-24 2021-11-30 日月光半导体制造股份有限公司 半导体封装装置及其制造方法
CN118173454A (zh) * 2024-05-14 2024-06-11 日月新半导体(威海)有限公司 一种3d半导体封装及其制造方法

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