JP2006303498A5 - - Google Patents

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Publication number
JP2006303498A5
JP2006303498A5 JP2006112545A JP2006112545A JP2006303498A5 JP 2006303498 A5 JP2006303498 A5 JP 2006303498A5 JP 2006112545 A JP2006112545 A JP 2006112545A JP 2006112545 A JP2006112545 A JP 2006112545A JP 2006303498 A5 JP2006303498 A5 JP 2006303498A5
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JP
Japan
Prior art keywords
focus
print
feature
test feature
lithography process
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JP2006112545A
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English (en)
Japanese (ja)
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JP2006303498A (ja
JP5371179B2 (ja
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Priority claimed from US11/324,739 external-priority patent/US7642019B2/en
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Publication of JP2006303498A5 publication Critical patent/JP2006303498A5/ja
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Publication of JP5371179B2 publication Critical patent/JP5371179B2/ja
Expired - Fee Related legal-status Critical Current
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JP2006112545A 2005-04-15 2006-04-14 フォトマスクのテストパターンイメージから印刷されたテストフィーチャーを用いるフォトリソグラフィ工程における焦点変化を測定するシステム及び方法 Expired - Fee Related JP5371179B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US67162605P 2005-04-15 2005-04-15
US60/671,626 2005-04-15
US67366905P 2005-04-21 2005-04-21
US60/673,669 2005-04-21
US11/324,739 2006-01-03
US11/324,739 US7642019B2 (en) 2005-04-15 2006-01-03 Methods for monitoring and adjusting focus variation in a photolithographic process using test features printed from photomask test pattern images; and machine readable program storage device having instructions therefore

Publications (3)

Publication Number Publication Date
JP2006303498A JP2006303498A (ja) 2006-11-02
JP2006303498A5 true JP2006303498A5 (enExample) 2009-05-28
JP5371179B2 JP5371179B2 (ja) 2013-12-18

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JP2006112545A Expired - Fee Related JP5371179B2 (ja) 2005-04-15 2006-04-14 フォトマスクのテストパターンイメージから印刷されたテストフィーチャーを用いるフォトリソグラフィ工程における焦点変化を測定するシステム及び方法

Country Status (4)

Country Link
US (2) US7642019B2 (enExample)
JP (1) JP5371179B2 (enExample)
KR (1) KR100714480B1 (enExample)
DE (1) DE102006017938B4 (enExample)

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WO2013101202A1 (en) * 2011-12-30 2013-07-04 Intel Corporation Techniques for phase tuning for process optimization
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KR102246872B1 (ko) 2014-07-29 2021-04-30 삼성전자 주식회사 포커스 계측 마크를 포함하는 포토마스크, 포커스 모니터 패턴을 포함하는 계측용 기판 타겟, 노광 공정 계측 방법, 및 집적회로 소자의 제조 방법
KR102235615B1 (ko) * 2014-07-29 2021-04-02 삼성전자주식회사 노광 공정 계측용 기판 타겟 및 노광 공정 계측 방법과 이를 이용한 집적회로 소자의 제조 방법
KR102238708B1 (ko) 2014-08-19 2021-04-12 삼성전자주식회사 리소그래피 공정의 초점 이동 체크 방법 및 이를 이용한 전사 패턴 오류 분석 방법
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