JP2006294179A - 不揮発性記憶装置 - Google Patents

不揮発性記憶装置 Download PDF

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Publication number
JP2006294179A
JP2006294179A JP2005116572A JP2005116572A JP2006294179A JP 2006294179 A JP2006294179 A JP 2006294179A JP 2005116572 A JP2005116572 A JP 2005116572A JP 2005116572 A JP2005116572 A JP 2005116572A JP 2006294179 A JP2006294179 A JP 2006294179A
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JP
Japan
Prior art keywords
data
memory cell
read
write
line
Prior art date
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Pending
Application number
JP2005116572A
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English (en)
Japanese (ja)
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JP2006294179A5 (enExample
Inventor
Hiroaki Tanizaki
弘晃 谷崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2005116572A priority Critical patent/JP2006294179A/ja
Priority to US11/400,529 priority patent/US7369429B2/en
Publication of JP2006294179A publication Critical patent/JP2006294179A/ja
Publication of JP2006294179A5 publication Critical patent/JP2006294179A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/78—Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
JP2005116572A 2005-04-14 2005-04-14 不揮発性記憶装置 Pending JP2006294179A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005116572A JP2006294179A (ja) 2005-04-14 2005-04-14 不揮発性記憶装置
US11/400,529 US7369429B2 (en) 2005-04-14 2006-04-10 Non-volatile memory device having toggle cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005116572A JP2006294179A (ja) 2005-04-14 2005-04-14 不揮発性記憶装置

Publications (2)

Publication Number Publication Date
JP2006294179A true JP2006294179A (ja) 2006-10-26
JP2006294179A5 JP2006294179A5 (enExample) 2008-04-24

Family

ID=37108318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005116572A Pending JP2006294179A (ja) 2005-04-14 2005-04-14 不揮発性記憶装置

Country Status (2)

Country Link
US (1) US7369429B2 (enExample)
JP (1) JP2006294179A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8027188B2 (en) 2007-11-28 2011-09-27 Kabushiki Kaisha Toshiba Semiconductor memory device
US8139402B2 (en) 2008-01-08 2012-03-20 Renesas Electronics Corporation Magnetic memory device
KR20150064998A (ko) * 2013-12-04 2015-06-12 삼성전자주식회사 자기 메모리 장치, 이의 동작 방법 및 이를 포함하는 반도체 시스템
JP2015185201A (ja) * 2014-03-25 2015-10-22 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 不揮発性メモリ装置及びそれを含む格納装置、それの書込み方法及び読出し方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8497538B2 (en) * 2006-05-31 2013-07-30 Everspin Technologies, Inc. MRAM synthetic antiferromagnet structure
US8116123B2 (en) 2008-06-27 2012-02-14 Seagate Technology Llc Spin-transfer torque memory non-destructive self-reference read method
US8116122B2 (en) 2008-06-27 2012-02-14 Seagate Technology Llc Spin-transfer torque memory self-reference read method
US7826260B2 (en) * 2008-10-27 2010-11-02 Seagate Technology Llc Spin-transfer torque memory self-reference read and write assist methods
US7813168B2 (en) * 2008-10-27 2010-10-12 Seagate Technology Llc Spin-transfer torque memory self-reference read and write assist methods
US7898838B2 (en) * 2008-10-31 2011-03-01 Seagate Technology Llc Resistive sense memory calibration for self-reference read method
US7876604B2 (en) * 2008-11-05 2011-01-25 Seagate Technology Llc Stram with self-reference read scheme
US7944738B2 (en) * 2008-11-05 2011-05-17 Micron Technology, Inc. Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling
US8159864B2 (en) * 2008-12-08 2012-04-17 Qualcomm Incorporated Data integrity preservation in spin transfer torque magnetoresistive random access memory
US8816455B2 (en) 2012-10-22 2014-08-26 Crocus Technology Inc. Memory devices with magnetic random access memory (MRAM) cells and associated structures for connecting the MRAM cells
JP2020047317A (ja) * 2018-09-14 2020-03-26 キオクシア株式会社 不揮発性記憶装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110933A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体記憶装置及びその製造方法
WO2004003921A2 (en) * 2002-06-28 2004-01-08 Freescale Semiconductor, Inc. Mram architecture with electrically isolated read write circuitry
WO2004003924A2 (en) * 2002-06-28 2004-01-08 Freescale Semiconductor, Inc. Circuit and method for reading a toggle memory cell
JP2004031640A (ja) * 2002-06-26 2004-01-29 Toshiba Corp 磁気メモリ装置
WO2004066306A2 (en) * 2003-01-17 2004-08-05 Freescale Semiconductor, Inc. Mram architecture with a grounded write bit line and electrically isolated read bit line
JP2004530244A (ja) * 2001-04-11 2004-09-30 インフィネオン テクノロジーズ アクチエンゲゼルシャフト Ｍｒａｍ半導体メモリーシステムの駆動方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4477199B2 (ja) 2000-06-16 2010-06-09 株式会社ルネサステクノロジ 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリへのアクセス方法および磁気ランダムアクセスメモリの製造方法
US6545906B1 (en) * 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
US7158407B2 (en) * 2005-04-29 2007-01-02 Freescale Semiconductor, Inc. Triple pulse method for MRAM toggle bit characterization

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110933A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体記憶装置及びその製造方法
JP2004530244A (ja) * 2001-04-11 2004-09-30 インフィネオン テクノロジーズ アクチエンゲゼルシャフト Ｍｒａｍ半導体メモリーシステムの駆動方法
JP2004031640A (ja) * 2002-06-26 2004-01-29 Toshiba Corp 磁気メモリ装置
WO2004003921A2 (en) * 2002-06-28 2004-01-08 Freescale Semiconductor, Inc. Mram architecture with electrically isolated read write circuitry
WO2004003924A2 (en) * 2002-06-28 2004-01-08 Freescale Semiconductor, Inc. Circuit and method for reading a toggle memory cell
WO2004066306A2 (en) * 2003-01-17 2004-08-05 Freescale Semiconductor, Inc. Mram architecture with a grounded write bit line and electrically isolated read bit line

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8027188B2 (en) 2007-11-28 2011-09-27 Kabushiki Kaisha Toshiba Semiconductor memory device
US8085585B2 (en) 2007-11-28 2011-12-27 Kabushiki Kaisha Toshiba Semiconductor memory device
US8139402B2 (en) 2008-01-08 2012-03-20 Renesas Electronics Corporation Magnetic memory device
CN101483176B (zh) * 2008-01-08 2013-02-13 瑞萨电子株式会社 磁记录装置
KR20150064998A (ko) * 2013-12-04 2015-06-12 삼성전자주식회사 자기 메모리 장치, 이의 동작 방법 및 이를 포함하는 반도체 시스템
KR102116792B1 (ko) * 2013-12-04 2020-05-29 삼성전자 주식회사 자기 메모리 장치, 이의 동작 방법 및 이를 포함하는 반도체 시스템
JP2015185201A (ja) * 2014-03-25 2015-10-22 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 不揮発性メモリ装置及びそれを含む格納装置、それの書込み方法及び読出し方法

Also Published As

Publication number Publication date
US20060233018A1 (en) 2006-10-19
US7369429B2 (en) 2008-05-06

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