JP2006278684A - 半導体ウエーハ処理方法 - Google Patents
半導体ウエーハ処理方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 8
- 239000002390 adhesive tape Substances 0.000 claims abstract description 50
- 238000001514 detection method Methods 0.000 claims abstract description 9
- 238000012886 linear function Methods 0.000 claims description 22
- 238000003672 processing method Methods 0.000 claims description 18
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 9
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 63
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/743—Apparatus for manufacturing layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L2224/743—Apparatus for manufacturing layer connectors
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- General Physics & Mathematics (AREA)
- Dicing (AREA)
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Abstract
【解決手段】 レーザ光線を照射して粘着テープの分断を遂行するのに先立って、分断されたストリートの状態を検出し、かかる検出に基づいて粘着テープにレーザ光線を照射する。
【選択図】 図7
Description
分断された該ストリートに沿って該粘着テープを分断するのに先立って、分断された該ストリートの状態を検出することを含み、該粘着テープの分断は分断された該ストリートの状態の検出に基づいて該粘着テープにレーザ光線を照射することによって遂行される、ことを特徴とする半導体ウエーハ処理方法が提供される。
γ1=x1sinθ−y1cosθ+b′
γ2=x2sinθ−y2cosθ+b′
γ3=x3sinθ−y3cosθ+b′
ここでb′=bcosθである
を算出する。
y′=(γ1/L1)×x
に応じてy軸方向に補正してレーザ光線を相対的に移動せしめてレーザ光線を照射する。次いで、領域L2においては、点P1と点P2(3点のうち一次関数直線の片端に2番目に近い点)を結ぶ直線に沿って、従ってx軸方向に進行に対応して下記式
y′=(γ2−γ1)/L2)×x+γ1
に応じてy軸方向に補正してレーザ光線を相対的に移動せしめてレーザ光線を照射する。更に、領域L3においては、点P2と点P3(3点のうち一次関数直線の片端に3番目に近い点)を結ぶ直線に沿って、従ってx軸方向に進行に対応して下記式
y′=(γ3−γ2)/L3)×x+γ2
に応じてy軸方向に補正してレーザ光線を相対的に移動せしめてレーザ光線を照射する。次いで、領域L4においては、点P3と一次関数直線y=ax+bの他端とを結ぶ直線に沿って、従ってx軸方向に進行に対応して下記式
y′=(−γ3/L4)×x+γ3
に応じてy軸方向に補正してレーザ光線を相対的に移動せしめてレーザ光線を照射する。
6:ウエーハの表面
8:ストリート
10:矩形領域
12:溝
14:保護テープ
16:ウエーハの裏面
18:粘着テープ
Claims (5)
- 表面には格子状に配列されたストリートによって複数個の矩形領域が区画されているウエーハを、該ストリートに沿って分断すると共に、該ウエーハの裏面全体に渡って粘着テープを貼着し、しかる後に分断された該ストリートに沿って該粘着テープを分断する半導体ウエーハ処理方法において、
分断された該ストリートに沿って該粘着テープを分断するのに先立って、分断された該ストリートの状態を検出することを含み、該粘着テープの分断は分断された該ストリートの状態の検出に基づいて該粘着テープにレーザ光線を照射することによって遂行される、ことを特徴とする半導体ウエーハ処理方法。 - 分断された該ストリートの状態の検出は、分断された該ストリートにおいて、該ストリートの延在方向に間隔をおいた少なくとも3点のxy座標位置を検出する、請求項1記載の半導体ウエーハ処理方法。
- 分断された該ストリートの状態の検出は、該3点の座標位置に基づいて最小二乗法によって一次関数直線を算出して該一次関数直線の傾斜角度を算出し、そして更に該一次関数直線をx軸方向に平行に延びる状態とした時の該一次関数直線に関する該3点のy軸方向変位量を算出することを含む、請求項2記載の半導体ウエーハ処理方法。
- 分断された該ストリートにおいて、該一次関数直線の片端と該3点のうちの該片端に最も近い点とを結ぶ直線に沿って該粘着テープにレーザ光線を照射して該粘着テープを分断し、次いで該最も近い点と該3点のうちの該片端に2番目に近い点とを結ぶ直線に沿ってレーザ光線を照射して該粘着テープを分断し、しかる後に該2番目に近い点と該片端に3番目に近い点とを結ぶ直線に沿ってレーザ光線を照射して該粘着テープを分断し、次いで該3番目に近い点と該一次関数直線の他端とを結ぶ直線に沿ってレーザ光線を照射して該粘着テープを分断する、請求項2又は3記載の半導体ウエーハ処理方法。
- 該ウエーハの表面に該ストリートに沿って所定深さdの溝を形成し、次いで該ウエーハの表面に保護テープを貼着し、しかる後に該ウエーハの裏面を研削して該ウエーハの厚さを該所定深さdと実質上同一にせしめ、かくして該ウエーハを該ストリートに沿って分断し、次いで該ウエーハの裏面に該粘着テープを貼着する、請求項1から4までのいずれかに記載の半導体ウエーハ処理方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2005095196A JP4478053B2 (ja) | 2005-03-29 | 2005-03-29 | 半導体ウエーハ処理方法 |
US11/390,339 US7468309B2 (en) | 2005-03-29 | 2006-03-28 | Semiconductor wafer treatment method |
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JP2005095196A JP4478053B2 (ja) | 2005-03-29 | 2005-03-29 | 半導体ウエーハ処理方法 |
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JP2006278684A true JP2006278684A (ja) | 2006-10-12 |
JP4478053B2 JP4478053B2 (ja) | 2010-06-09 |
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JP2005095196A Active JP4478053B2 (ja) | 2005-03-29 | 2005-03-29 | 半導体ウエーハ処理方法 |
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JP2019121624A (ja) * | 2017-12-28 | 2019-07-22 | 株式会社ディスコ | 加工装置 |
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