JP2006253312A - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP2006253312A JP2006253312A JP2005065828A JP2005065828A JP2006253312A JP 2006253312 A JP2006253312 A JP 2006253312A JP 2005065828 A JP2005065828 A JP 2005065828A JP 2005065828 A JP2005065828 A JP 2005065828A JP 2006253312 A JP2006253312 A JP 2006253312A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- conductive layer
- processing apparatus
- plasma processing
- support member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000000644 propagated effect Effects 0.000 claims abstract description 7
- 230000002093 peripheral effect Effects 0.000 claims description 28
- 239000003989 dielectric material Substances 0.000 claims description 20
- 230000001902 propagating effect Effects 0.000 claims description 3
- 238000007789 sealing Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 39
- 230000002159 abnormal effect Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 239000004020 conductor Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000005672 electromagnetic field Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 101000574352 Mus musculus Protein phosphatase 1 regulatory subunit 17 Proteins 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Landscapes
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005065828A JP2006253312A (ja) | 2005-03-09 | 2005-03-09 | プラズマ処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005065828A JP2006253312A (ja) | 2005-03-09 | 2005-03-09 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006253312A true JP2006253312A (ja) | 2006-09-21 |
| JP2006253312A5 JP2006253312A5 (enExample) | 2008-04-17 |
Family
ID=37093487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005065828A Pending JP2006253312A (ja) | 2005-03-09 | 2005-03-09 | プラズマ処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006253312A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009182023A (ja) * | 2008-01-29 | 2009-08-13 | Ulvac Japan Ltd | 真空処理装置 |
| JP2014160790A (ja) * | 2013-01-24 | 2014-09-04 | Tokyo Electron Ltd | 基板処理装置及び載置台 |
| JP2016191097A (ja) * | 2015-03-31 | 2016-11-10 | 三菱重工食品包装機械株式会社 | 容器に成膜する装置および方法 |
| KR20200094316A (ko) * | 2019-01-30 | 2020-08-07 | 공주대학교 산학협력단 | 마이크로파를 이용한 가열장치 |
| CN112420472A (zh) * | 2019-08-23 | 2021-02-26 | 东京毅力科创株式会社 | 基片处理装置、基片处理装置的制造方法和维护方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0448596A (ja) * | 1990-06-14 | 1992-02-18 | Anelva Corp | 真空容器のマイクロ波導入用窓 |
| WO1998033362A1 (en) * | 1997-01-29 | 1998-07-30 | Tadahiro Ohmi | Plasma device |
| JP2001192839A (ja) * | 2000-01-04 | 2001-07-17 | Sharp Corp | プラズマプロセス装置 |
-
2005
- 2005-03-09 JP JP2005065828A patent/JP2006253312A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0448596A (ja) * | 1990-06-14 | 1992-02-18 | Anelva Corp | 真空容器のマイクロ波導入用窓 |
| WO1998033362A1 (en) * | 1997-01-29 | 1998-07-30 | Tadahiro Ohmi | Plasma device |
| JP2001192839A (ja) * | 2000-01-04 | 2001-07-17 | Sharp Corp | プラズマプロセス装置 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009182023A (ja) * | 2008-01-29 | 2009-08-13 | Ulvac Japan Ltd | 真空処理装置 |
| JP2014160790A (ja) * | 2013-01-24 | 2014-09-04 | Tokyo Electron Ltd | 基板処理装置及び載置台 |
| JP2016191097A (ja) * | 2015-03-31 | 2016-11-10 | 三菱重工食品包装機械株式会社 | 容器に成膜する装置および方法 |
| KR20200094316A (ko) * | 2019-01-30 | 2020-08-07 | 공주대학교 산학협력단 | 마이크로파를 이용한 가열장치 |
| KR102155579B1 (ko) * | 2019-01-30 | 2020-09-14 | 공주대학교 산학협력단 | 마이크로파를 이용한 가열장치 |
| CN112420472A (zh) * | 2019-08-23 | 2021-02-26 | 东京毅力科创株式会社 | 基片处理装置、基片处理装置的制造方法和维护方法 |
| CN112420472B (zh) * | 2019-08-23 | 2024-05-31 | 东京毅力科创株式会社 | 基片处理装置、基片处理装置的制造方法和维护方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5013393B2 (ja) | プラズマ処理装置と方法 | |
| KR102266368B1 (ko) | 플라즈마 처리 장치 | |
| US8636871B2 (en) | Plasma processing apparatus, plasma processing method and storage medium | |
| US20080105650A1 (en) | Plasma processing device and plasma processing method | |
| WO2010032750A1 (ja) | 基板処理装置および基板載置台 | |
| US10968513B2 (en) | Plasma film-forming apparatus and substrate pedestal | |
| KR20170031144A (ko) | 플라즈마 처리 장치 | |
| TWI772430B (zh) | 電漿處理裝置及氣體噴淋頭 | |
| JP4093212B2 (ja) | プラズマ処理装置 | |
| KR20130007385A (ko) | 플라즈마 처리장치 | |
| KR101411171B1 (ko) | 플라즈마 처리 장치 | |
| KR101464867B1 (ko) | 반도체 장치 제조 방법, 기판 처리 장치 및 기록 매체 | |
| KR20090009369A (ko) | 히터가 설치된 유도 결합 플라즈마 소스를 구비한 플라즈마반응기 | |
| JP3889280B2 (ja) | プラズマ処理装置 | |
| CN113725059A (zh) | 一种下电极组件，其安装方法及等离子体处理装置 | |
| CN101189707A (zh) | 等离子体处理装置 | |
| JP4910396B2 (ja) | プラズマ処理装置 | |
| US20150176125A1 (en) | Substrate processing apparatus | |
| JP2006253312A (ja) | プラズマ処理装置 | |
| KR20240155342A (ko) | 플라즈마 처리 장치 및 플라즈마 처리 방법 | |
| CN100477091C (zh) | 处理装置 | |
| KR102192597B1 (ko) | 플라스마 처리 장치 | |
| JP2015082546A (ja) | プラズマ処理装置及びプラズマ処理方法 | |
| JP5876463B2 (ja) | プラズマ処理装置 | |
| JP5728565B2 (ja) | プラズマ処理装置及びこれに用いる遅波板 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080304 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080304 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100712 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100720 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20101130 |