JP2006245165A - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP2006245165A
JP2006245165A JP2005056964A JP2005056964A JP2006245165A JP 2006245165 A JP2006245165 A JP 2006245165A JP 2005056964 A JP2005056964 A JP 2005056964A JP 2005056964 A JP2005056964 A JP 2005056964A JP 2006245165 A JP2006245165 A JP 2006245165A
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JP
Japan
Prior art keywords
layer
composition
side intermediate
intermediate layer
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005056964A
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English (en)
Japanese (ja)
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JP2006245165A5 (enExample
Inventor
Akira Omae
暁 大前
Muneyuki Kazetagawa
統之 風田川
Harunori Shiomi
治典 塩見
Nobukata Okano
展賢 岡野
Sukeyuki Arimochi
祐之 有持
Takaaki Ami
隆明 網
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2005056964A priority Critical patent/JP2006245165A/ja
Publication of JP2006245165A publication Critical patent/JP2006245165A/ja
Publication of JP2006245165A5 publication Critical patent/JP2006245165A5/ja
Pending legal-status Critical Current

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JP2005056964A 2005-03-02 2005-03-02 半導体発光素子 Pending JP2006245165A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005056964A JP2006245165A (ja) 2005-03-02 2005-03-02 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005056964A JP2006245165A (ja) 2005-03-02 2005-03-02 半導体発光素子

Publications (2)

Publication Number Publication Date
JP2006245165A true JP2006245165A (ja) 2006-09-14
JP2006245165A5 JP2006245165A5 (enExample) 2007-09-20

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ID=37051291

Family Applications (1)

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JP2005056964A Pending JP2006245165A (ja) 2005-03-02 2005-03-02 半導体発光素子

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JP (1) JP2006245165A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012060172A (ja) * 2011-12-19 2012-03-22 Toshiba Corp 半導体発光素子
JP2013016873A (ja) * 2012-10-25 2013-01-24 Toshiba Corp 半導体発光素子
US8525203B2 (en) 2010-02-16 2013-09-03 Kabushiki Kaisha Toshiba Semiconductor light emitting device
KR101344181B1 (ko) 2008-01-30 2013-12-20 엘지전자 주식회사 질화물 반도체 소자 및 그의 제조 방법
JP2014033232A (ja) * 2013-11-18 2014-02-20 Toshiba Corp 半導体発光素子
US9093588B2 (en) 2010-07-08 2015-07-28 Kabushiki Kaisha Toshiba Semiconductor light emitting device with an aluminum containing layer formed thereon
US9437775B2 (en) 2013-06-18 2016-09-06 Meijo University Nitride semiconductor light-emitting device
JP2021082687A (ja) * 2019-11-18 2021-05-27 シャープ福山セミコンダクター株式会社 画像表示素子及び画像表示素子の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004087762A (ja) * 2002-08-27 2004-03-18 Sony Corp 窒化物系半導体発光素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004087762A (ja) * 2002-08-27 2004-03-18 Sony Corp 窒化物系半導体発光素子

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101344181B1 (ko) 2008-01-30 2013-12-20 엘지전자 주식회사 질화물 반도체 소자 및 그의 제조 방법
US8525203B2 (en) 2010-02-16 2013-09-03 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US8648381B2 (en) 2010-02-16 2014-02-11 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US8901595B2 (en) 2010-02-16 2014-12-02 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US9093588B2 (en) 2010-07-08 2015-07-28 Kabushiki Kaisha Toshiba Semiconductor light emitting device with an aluminum containing layer formed thereon
JP2012060172A (ja) * 2011-12-19 2012-03-22 Toshiba Corp 半導体発光素子
JP2013016873A (ja) * 2012-10-25 2013-01-24 Toshiba Corp 半導体発光素子
US9437775B2 (en) 2013-06-18 2016-09-06 Meijo University Nitride semiconductor light-emitting device
JP2014033232A (ja) * 2013-11-18 2014-02-20 Toshiba Corp 半導体発光素子
JP2021082687A (ja) * 2019-11-18 2021-05-27 シャープ福山セミコンダクター株式会社 画像表示素子及び画像表示素子の製造方法
US11908847B2 (en) 2019-11-18 2024-02-20 Sharp Fukuyama Laser Co., Ltd. Image display element and method for manufacturing image display element
JP7492328B2 (ja) 2019-11-18 2024-05-29 シャープ福山レーザー株式会社 画像表示素子及び画像表示素子の製造方法

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