JP2006245051A - Apparatus and method of treating substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To perform a treatment which reduces adverse influences due to treatment liquid, treatment liquid in the last process which remains on a substrate is performed, while preventing that rinse liquid flows backwards to the processing tank of a previous process to the substrate, even in a case where the treatment liquid, the treatment liquid which is hard to remove from the substrate in the last process is given, etc. <P>SOLUTION: In the processing chamber of a washing treatment, rinse liquid is supplied from an inlet nozzle 20 toward the substrate conveyance direction downstream to the front surface of the substrate W under conveyance, and a permutation mode from the processing liquid, the treatment liquid supplied at the last process to the rinse liquid is performed, and two fluids which have gas and liquids are supplied throughout the substrate width of the surface, which crosses in the substrate conveyance direction from the two fluid nozzles 21 to the front surface of the substrate W, after this rinse liquid has been supplied. The two fluids which have the gas and the liquids are supplied from the two-fluid nozzle 21 throughout along the substrate width of the surface, which crosses in the substrate conveyance direction, and the processing liquid of the last process which still remains on the substrate front surface is removed. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to various processes, for example, an etching process, on a substrate to be processed such as a glass substrate for LCD or PDP, a semiconductor substrate in a manufacturing process of a liquid crystal display device (LCD), a plasma display device (PDP), a semiconductor device and the like. The present invention relates to a substrate processing apparatus for performing a subsequent replacement process.

Conventionally, in a substrate processing apparatus, rinsing processing for a substrate after etching processing has been performed as follows. For example, as shown in Patent Document 1 (FIG. 1 and the like), when the substrate W is carried into the processing chamber 12 of the water washing processing unit 10, the substrate from the inlet nozzle 20 near the inlet side opening 14 of the processing chamber 12. When the rinsing liquid is supplied toward the downstream side in the transport direction and the substrate W further proceeds downstream in the transport direction, the rinsing liquid is supplied from the upper spray nozzle 22 to the surface of the substrate W until the substrate W is unloaded from the processing chamber 12. This is because (1) the rinsing liquid supplied to the substrate from the inlet nozzle 20 is prevented from flowing back into the processing tank of the previous process, and (2) just below the slit-like inlet nozzle 20 near the inlet of the processing chamber 12. The shape of the wiring pattern formed on the substrate surface due to the remaining of the treatment liquid used in the pretreatment by supplying a large amount of rinse liquid uniformly to the substrate surface portion of the substrate and replacing it with the rinse liquid in a short time Further, the deterioration of the uniformity of the line width is prevented, and thereafter, the rinsing liquid is supplied from the upper spray nozzle 22.
JP 2004-273984 A

  However, according to the above substrate processing apparatus, even if the rinsing liquid is supplied from the inlet nozzle 20, the processing liquid used in the previous step is difficult to be removed from the substrate surface, such as having a high viscosity. In this case, it is difficult to accurately replace the pretreatment liquid that has adhered to the substrate surface with the rinse liquid, and the remaining pretreatment liquid may adversely affect the wiring pattern formed on the substrate. There is.

  The present invention has been made to solve the above-described problem, and even when a treatment liquid that is difficult to remove from the substrate is applied in the previous step, a rinse liquid to be newly supplied to the substrate is provided. An object of the present invention is to perform a process for reducing the adverse effect of the processing liquid in the previous process remaining on the substrate while preventing the flow back to the processing tank in the previous process.

The invention according to claim 1 of the present invention is arranged in a treatment tank for performing a replacement process for replacing the treatment liquid adhering to the surface of the substrate conveyed in a predetermined direction with a rinsing liquid. Rinsing liquid supply means for supplying a rinsing liquid toward the downstream side of the substrate transport direction with respect to the surface of the substrate;
2 provided in the processing tank on the downstream side of the substrate transport direction with respect to the rinsing liquid supply means, and made of gas and liquid with respect to the surface of the substrate over the entire width of the substrate intersecting the substrate transport direction. A substrate processing apparatus comprising two fluid supply means for supplying fluid.

According to a fourth aspect of the present invention, the surface of the substrate being transported in a processing tank that performs a replacement process in which the processing liquid adhered to the surface of the substrate transported in a predetermined direction is replaced with a rinsing liquid. In contrast, a first step of supplying a rinsing liquid toward the downstream side in the substrate transport direction;
From the gas and the liquid to the surface of the substrate over the entire width of the substrate intersecting the substrate transport direction on the downstream side of the substrate transport direction from the rinse liquid supply position in the first step in the processing tank. And a second process for supplying two fluids.

  In these configurations, by supplying a rinsing liquid toward the downstream side in the substrate transport direction with respect to the surface of the substrate being transported in the vicinity of the inlet in the treatment tank, The treatment liquid supplied in the previous step is replaced with the rinse liquid while preventing the rinse liquid from flowing backward. Further, even with the two fluids consisting of gas and liquid supplied over the entire width of the substrate intersecting the substrate transport direction with respect to the substrate surface after the rinsing liquid is supplied, the substrate surface still remains on the substrate surface. Since the treatment liquid in the previous process is removed, even if a treatment liquid that is difficult to remove such as a treatment liquid having a high viscosity is applied in the previous process, the remaining treatment liquid can be further removed from the substrate surface. it can.

  Since the temperature of the two fluids composed of the gas and the liquid is low due to the effect of adiabatic expansion, the treatment liquid of the previous process remaining on the substrate surface is cooled by the two fluids. In addition, since the liquid portion of the two fluids is fine particles, it easily evaporates with ambient heat to take away the heat of vaporization, but the treatment liquid remaining on the substrate surface is also cooled by this cooling effect. Therefore, for example, when the processing liquid applied in the previous step is an etching liquid, the etching liquid can be cooled to lower the etching rate, so that the etching liquid remaining on the substrate surface can reduce the etching rate. The uniformity of the shape and line width of the wiring pattern formed on the surface can be prevented.

Further, the invention according to claim 2 is arranged in a processing tank for performing a replacement process for replacing the processing liquid adhering to the surface of the substrate transported in a predetermined direction with a rinsing liquid, and the substrate being transported A rinsing liquid supply means for supplying a rinsing liquid toward the downstream side of the substrate conveyance direction,
A high-pressure fluid that is provided downstream of the rinsing liquid supply means in the processing tank and supplies a high-pressure fluid to the surface of the substrate over the entire width of the substrate that intersects the substrate conveyance direction. A substrate processing apparatus including a supply unit.

  The invention described in claim 3 is the substrate processing apparatus according to claim 2, wherein the high-pressure fluid supply means supplies a high-pressure liquid as the high-pressure fluid.

According to a fifth aspect of the present invention, the surface of the substrate being transported in a processing tank that performs a replacement process for replacing the processing liquid adhering to the surface of the substrate transported in a predetermined direction with a rinsing liquid. In contrast, a first step of supplying a rinsing liquid toward the downstream side in the substrate transport direction;
A high-pressure fluid is supplied to the surface of the substrate across the entire width of the substrate intersecting the substrate transport direction on the downstream side of the substrate transport direction from the rinse liquid supply position in the first step in the processing tank. A substrate processing method comprising a second step.

  In this configuration, the rinsing liquid is supplied toward the downstream side in the substrate transport direction with respect to the surface of the substrate being transported in the vicinity of the inlet in the treatment tank, thereby rinsing the treatment tank in a process preceding the processing tank. The treatment liquid supplied in the previous step is replaced with the rinse liquid while preventing the liquid from flowing backward. A pre-process that remains on the surface of the substrate even by the high-pressure fluid supplied over the entire width of the substrate that intersects the substrate transport direction with respect to the surface of the substrate that has been supplied with the upper rinse liquid Since the treatment liquid applied in (1) is removed, the residual treatment liquid can be reliably removed even when a treatment liquid having a high viscosity is applied to the substrate surface in the previous step.

  According to invention of Claim 1 and Claim 4, it replaces with the rinse liquid from the process liquid supplied at the front process, preventing that the rinse liquid flows back into the process tank of a front process rather than a process tank. In a case where a processing liquid that is difficult to remove, such as a processing liquid having a high viscosity in the previous process, is applied to the substrate surface by supplying two fluids consisting of a gas and a liquid to the substrate. Even if it exists, the said residual processing liquid can be removed exactly and the bad influence which a residual processing liquid has with respect to a board | substrate can be reduced.

  According to the invention according to claim 2, claim 3, and claim 5, while preventing the rinsing liquid from flowing back into the treatment tank of the previous process than the treatment tank, from the treatment liquid supplied in the previous process In this case, the replacement with the rinsing liquid can be performed in a short time, and a processing liquid that is difficult to remove such as a high-viscosity processing liquid is applied to the substrate surface in the previous step by supplying the high-pressure fluid to the substrate. Even in this case, the residual treatment liquid can be reliably removed.

  Hereinafter, a substrate processing apparatus and a substrate processing method according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a side sectional view showing a schematic configuration of a substrate processing apparatus according to a first embodiment of the present invention, and in particular, a rinsing liquid supply mechanism (inlet nozzle 20 and two-fluid nozzle 21) which is a characteristic configuration of the present invention. The water-washing process part to which is applied is illustrated. In the substrate processing apparatus 1 according to the first embodiment, an etching tank is provided adjacent to the water washing processing unit 10 as a pre-process of the water washing processing unit 10 (not shown). In the etching treatment tank, an etching chemical (hereinafter referred to as an etching solution) is supplied to the substrate surface in order to remove an exposed portion below the resist film patterned by the development process. Then, the chemical | medical solution for etching, etc. are washed away, and it consists of the new rinse liquid (For example, pure water etc.) supplied in the water washing process part 10. What is necessary is just a liquid different from the process liquid supplied to the board | substrate W at the previous process. ).

  The water washing processing unit 10 includes a processing chamber 12 having an inlet side opening 14 and an outlet side opening 16. Inside the processing chamber 12 is disposed a roller conveyor 18 that transports the substrate W in a horizontal posture or in a posture that is inclined in a direction perpendicular to the substrate transport direction (arrow direction in FIG. 1). As described above, the substrate W in the state where the etching solution is adhered to the surface is transferred to the water washing processing unit 10. An inlet nozzle (rinsing liquid supply means) 20 that discharges the rinsing liquid onto the surface of the substrate W is disposed near the inlet side opening 14 of the processing chamber 12. The inlet nozzle 20 supplies a large amount of rinsing liquid to the substrate W, and replaces the etching liquid applied to the surface of the substrate W in the previous step with the rinsing liquid in a short time. Furthermore, a two-fluid nozzle (two-fluid supply means) 21 that discharges two fluids consisting of gas and liquid to the substrate is provided above the substrate conveyance path on the downstream side of the inlet nozzle 20 in the substrate conveyance direction. On the further downstream side of the two-fluid nozzle 21, an upper spray nozzle 22 and a lower spray nozzle 24 are provided above and below the substrate transport path along the substrate transport path, respectively.

Rinse liquid supply pipes 26, 28, and 30 are connected to the inlet nozzle 20, the upper spray nozzle 22, and the lower spray nozzle 24, respectively. The rinse liquid supply pipes 26, 28, and 30 are connected to an opening / closing control valve V, respectively. ₁ , V _{2, and} V ₃ are provided. Each rinse liquid supply pipe 26, 28, 30 is connected to a pipe 32 a, and the pipe 32 a is connected to the discharge port side of the pump 34. The suction port side of the pump 34 is connected to the bottom of the water storage tank 36 in which the pure water 2 is stored via a pipe 32b.

A rinsing liquid pipe 31 is connected to the two-fluid nozzle 21, and for example, pure water is appropriately supplied from a pure water supply source (not shown) or a water storage tank 36. The rinsing liquid pipe 31 is provided with a valve V ₆ capable of adjusting the opening, and is capable of opening and closing the pure water flow path to be supplied to the two-fluid nozzle 21 and adjusting the flow rate of the pure water.

Further, a nitrogen gas pipe 33 for supplying high-pressure nitrogen gas from a nitrogen gas supply source to the two-fluid nozzle 21 is connected to the two-fluid nozzle 21. The nitrogen gas pipe 33 is provided with a valve V ₇ whose opening degree can be adjusted. The flow of the nitrogen gas supplied to the two-fluid nozzle 21 can be opened and closed, and the flow rate of the nitrogen gas can be adjusted. Yes. Note that by changing the opening of the valve V ₇ , the pressure (flow rate) of nitrogen gas introduced into the two-fluid nozzle 21 is changed, and the particle size of pure water droplets generated by the two-fluid nozzle 21 is changed. It is also possible. In the nitrogen gas pipe 33, a pressure gauge 35 for measuring the pressure of nitrogen gas introduced into the two-fluid nozzle 21 is disposed between the valve V ₇ and the two-fluid nozzle 21. Detection result by the pressure gauge 35 is sent to the controller 50, the controller 50 is possible to adjust the pressure of the controlled nitrogen gas opening and closing of the valve V ₇ in accordance with the detection result.

When the valves V _{6 and} V ₇ are simultaneously opened and pure water and nitrogen gas are simultaneously introduced into the two-fluid nozzle 21, a pure water droplet (mist) is generated and ejected by the two-fluid nozzle 21. It has become. The opening / closing operation of the valves V _{6 and} V ₇ is controlled by the controller 50.

  When cleaning the surface of the substrate W, the controller 50 controls to discharge the rinse liquid from the inlet nozzle 20 and to inject two fluids composed of pure water and nitrogen gas from the two-fluid nozzle 21 toward the surface of the substrate W. Further, a mist-like rinse liquid is sprayed onto the substrate W from the upper spray nozzle 22 and the lower spray nozzle 24.

A liquid outflow pipe 42 is provided at the bottom of the processing chamber 12. The liquid outflow pipe 42 branches into a recovery pipe 44 and a drainage pipe 46. The front end outlet of the recovery pipe 44 is introduced into the water storage tank 36. Further, the used rinse liquid is discarded through the drain pipe 46. The recovery pipe 44 and the drain pipe 46 are provided with open / close control valves V ₄ and V ₅ , respectively.

  Next, the inlet nozzle 20 and the two-fluid nozzle 21 will be described. 2 is a plan view showing the arrangement of the inlet nozzle 20 and the two-fluid nozzle 21, and the state in which the rinsing liquid is discharged from the inlet nozzle 20 and the two-fluid nozzle 21, and FIG. 3 is the arrangement of the inlet nozzle 20 and the two-fluid nozzle 21. FIG. 4 is a side view showing a state in which rinse liquid is discharged from an inlet nozzle 20 and a two-fluid nozzle 21.

  As shown in FIG. 2, the inlet nozzle 20 extends in the substrate width direction orthogonal to the transport direction of the substrate W, and is provided with a length extending over the substrate width. The inlet nozzle 20 is provided with slits 201 through which the rinse liquid is discharged over the entire width of the substrate along the length direction of the inlet nozzle 20. As shown in FIGS. 2 and 3, a large amount of rinse liquid is discharged in a curtain shape from the slit 201 to the entire width of the surface of the substrate W toward the downstream side in the substrate transport direction. The discharged rinsing liquid spreads over the entire surface of the substrate W on the downstream side in the substrate transport direction from the inlet nozzle 20. Thereby, the processing liquid (etching liquid) in the previous process remaining on the surface of the substrate W being transferred is washed away in a short time.

  In addition, the two-fluid nozzle 21 disposed on the downstream side of the inlet nozzle 20 in the substrate transport direction also extends in the width direction of the substrate W and is provided with a length extending over the width of the substrate. The two-fluid nozzle 21 is provided with a plurality of discharge ports 210 for discharging two fluids to the surface portion of the substrate W located immediately below the nozzles 21 along the length direction of the two-fluid nozzle 21. From each discharge port 210, for example, when spraying perpendicularly to the surface of the substrate W, two fluids are sprayed at a distance of 20 mm to 100 mm (more preferably 70 mm) from the substrate W to the discharge port 210 and an injection pressure of 0.4 Mpa. To do. As shown in FIG. 2, when the two fluids ejected from each ejection port 210 reach the surface of the substrate W, the ejection regions R of the two fluids are separated in the substrate width direction as shown in FIG. It is set to overlap.

  The two fluids discharged from the discharge port 210 of the two-fluid nozzle 21 reach the surface of the substrate W with the above pressure, and the two fluids discharged from the discharge ports 210 overlap each other. Something like a fluid wall is formed.

  The rinsing liquid is sprayed from the inlet nozzle 20 in the form of a curtain, and the processing liquid remaining on the surface of the substrate W until then is moved downstream of the substrate W in the substrate feeding direction by the rinsing liquid discharged from the inlet nozzle 20. The rinsing liquid containing the processing liquid (etching liquid) applied to the substrate W in the previous process is washed away by the two-fluid wall 21 as shown in FIGS. 2 and 3. Is not dammed at the position of the position, and no further flows downstream in the substrate transport direction. The rinsing liquid that has been dammed flows in the substrate width direction along the walls of the two fluids, and flows down from the surface of the substrate W to the bottom of the processing chamber 12 at the side edge of the substrate W. In the case of this embodiment, since the substrate W is transported in a posture inclined in a direction orthogonal to the substrate transport direction by the roller conveyor 18, the dammed rinse liquid is on the substrate W side that is the lower side of the tilt. Guided by the edge, it flows down to the bottom of the processing chamber 12.

  As described above, the processing liquid applied in the previous step on the substrate W flows down from the surface of the substrate W. For example, when the processing liquid applied in the previous step has a high viscosity, If it is difficult to remove from the surface of W, the processing liquid may remain on the surface of the substrate W after cleaning with the rinse liquid from the inlet nozzle 20. However, in the case of the present embodiment, the two fluids ejected from the discharge port 210 of the two-fluid nozzle 21 are composed of gas and liquid as described above, and therefore the temperature is lowered due to the effect of adiabatic expansion. The treatment liquid of the previous process remaining on the surface is cooled. In addition, since the liquid part of the two fluids is fine particles, it easily evaporates with the surrounding heat and takes away the heat of vaporization. To be cooled. Therefore, for example, the etching solution applied in the previous step can be cooled to lower the etching rate (reaction rate), so that the etching solution remaining on the surface of the substrate W is formed on the surface of the substrate W. The adverse effect on the pattern shape and the uniformity of the line width is reduced.

  Further, as described above, since the two fluids are ejected from the two-fluid nozzle 21 to the surface of the substrate W at a constant pressure, the previous process that remains on the surface of the substrate W also by the pressure of the ejected two fluids. The effect of removing the treatment liquid can be obtained.

  Furthermore, due to the rinsing liquid blocking effect by the two fluid walls, the processing liquid in the previous step does not remain in the rinsing liquid that flows down from the substrate W on the downstream side of the two-fluid nozzle 21 in the substrate transport direction. If the rinse liquid is recovered in the region downstream of the two-fluid nozzle 21, it becomes suitable for reuse.

  Next, a second embodiment of the substrate processing apparatus according to the present invention will be described. FIG. 4 is a side sectional view showing a schematic configuration of the substrate processing apparatus according to the second embodiment. In particular, the rinsing liquid supply mechanism (inlet nozzle 20 and high-pressure spray nozzle 21 ′) which is a characteristic configuration of the present invention is applied. The water washing processing unit 10 ′ thus illustrated is illustrated. FIG. 5A is a view showing a first example of the discharge port of the high-pressure spray nozzle provided in the substrate processing apparatus according to the second embodiment and the discharge region on the substrate surface of the high-pressure fluid discharged from the discharge port. (B) is the figure which showed the 2nd example of the discharge area | region in the substrate surface of the high pressure fluid nozzle discharged from the discharge port of the high pressure spray nozzle with which the substrate processing apparatus which concerns on 2nd Embodiment is equipped, and the said discharge port. is there.

  As shown in FIG. 4, a substrate processing apparatus 1 ′ according to the second embodiment is replaced with a high-pressure spray nozzle (high-pressure fluid supply means) instead of the two-fluid nozzle 21 provided in the substrate processing apparatus 1 of the first embodiment. 21 '. The two-fluid nozzle 21 of the first embodiment reduces the adverse effect of the remaining processing liquid on the substrate W by the cooling action by the two fluids and the jet pressure of the two fluids, but the high-pressure spray of the second embodiment. The nozzle 21 ′ increases the removal rate of the remaining processing liquid with the pressure of the rinse liquid to be discharged, and reduces the adverse effect of the remaining processing liquid on the substrate W.

The high pressure spray nozzle 21 ′ discharges a rinse liquid such as pure water to the substrate W at a high pressure, and is connected to the rinse liquid tank 64 by a rinse liquid supply pipe 61. A rinse liquid supply pipe 61 between the high-pressure spray nozzle 21 ′ and the rinse liquid tank 64 is provided with a filter 62, an on-off valve V ₈ for adjusting the flow rate, and a pump 63. The pump 63 is driven by the output of the inverter 65, and the output of the inverter 65 is controlled by the controller 50. The pump 63 can be driven and controlled by arbitrarily switching the discharge pressure toward the high-pressure spray nozzle 21 ′ by controlling the frequency of the inverter 65 by the controller 50.

  Further, the high pressure spray nozzle 21 ′ is provided downstream of the inlet nozzle 20 in the substrate transport direction in the substrate transport direction and extends in the substrate width direction of the substrate W, similarly to the two-fluid nozzle 21 according to the first embodiment. It is provided with a length over the substrate width. The high-pressure spray nozzle 21 ′ has a discharge port 210 ′ (see FIGS. 5A and 5B) that discharges the rinsing liquid at a high pressure to the surface portion of the substrate W just below the high-pressure spray nozzle 21 ′. A plurality of them are provided at regular intervals over the length direction.

  Each of the discharge ports 210 ′ injects a high-pressure rinse liquid so as to be orthogonal to the surface of the substrate W. The intervals between the discharge ports 210 ′ are set such that when the rinse liquid sprayed from the discharge ports 210 reaches the surface of the substrate W, the spray regions of the respective rinse liquids overlap with each other in the substrate width direction. Is done. From each discharge port 210 ′, for example, when the rinsing liquid is sprayed orthogonally to the surface of the substrate W, the distance from the substrate W to the discharge port 210 is 20 mm to 100 mm (more preferably 70 mm), and the spray pressure is 0.3 to 0.4. Rinse rinse with Mpa.

For example, as shown in the upper diagram of FIG. 5 (a), the discharge hole 2101 ′ provided in each discharge port 210 ′ for discharging the rinsing liquid has an elliptical diameter in the length direction of the high-pressure spray nozzle 21 ′. disposed side by side in parallel, as shown in the lower of FIG. 5 (a), so that the length direction end portions of the rinse liquid injection region R ₁ of the respective ejection ports 2101 'overlaps. In this way, the discharge holes 2101 'be relatively wide spacing between, it is possible to cross the injection region R ₁ by the rinsing liquid, high pressure spray nozzles 21' the number of outlet openings 210 'provided on the Can be reduced.

Further, as shown in the upper diagram of FIG. 5B, the discharge holes 2101 ″ of the discharge ports 210 ″ are arranged in parallel at an angle with respect to the length direction of the high-pressure spray nozzle 21 ′. FIG 5 (b) of the as shown below, so as to each other (the end portion in the width direction) rinsing liquid ejection region R ₂ of the side of each discharge hole 2101 "overlap. in this way, the discharge hole 2101 Since the remaining treatment liquid removal area by the rinse liquid from “can be widened and the striking force to the substrate W by the rinse liquid can be ensured, the removal rate of the remaining treatment liquid can be increased.

  The present invention is not limited to the configuration of the above embodiment, and various modifications can be made. For example, in the first embodiment, the two-fluid nozzle 21 has been described as ejecting two fluids composed of pure water and nitrogen gas. However, the liquid and gas constituting the two fluids ejected from the two-fluid nozzle are limited to these. Alternatively, other liquids and gases can be used.

  Further, the configuration of the two-fluid nozzle 21 is not limited to that shown in the above-described embodiment, and a configuration having a configuration different from the above may be adopted.

  In the second embodiment, pure water is discharged from the high-pressure spray nozzle 21 ′. However, other liquid may be discharged at high pressure, and further, high-pressure gas is discharged. You may make it do. In the case of injecting gas, from each discharge port 210 ′, for example, gas is injected perpendicularly to the surface of the substrate W, and the distance from the substrate W to the discharge port 210 is 20 mm to 100 mm, for example, 0.15 Mpa. Gas is injected at the injection pressure.

  In the first and second embodiments, the treatment tank provided with the inlet nozzle 20 and the two-fluid nozzle 21 or the high-pressure spray nozzle 21 ′ is the washing treatment unit 10 that is a process after the peeling process. The treatment tank provided with the inlet nozzle 20 and the two-fluid nozzle 21 or the high-pressure spray nozzle 21 ′ is not limited to the washing treatment unit 10, and the inlet nozzle 20 and the two-fluid nozzle 21 or the high-pressure are used as a treatment tank for performing other treatments. It is also possible to provide a spray nozzle 21 '.

  In the above embodiment, the inlet nozzle 20 and the two-fluid nozzle 21 of the processing chamber 12 are described as performing the process of replacing the substrate W after the etching process with the rinsing liquid. For example, after the peeling process, The present invention can also be applied to the substrate W after the cleaning process and the development process.

1 is a side sectional view showing a schematic configuration of a substrate processing apparatus according to a first embodiment of the present invention, and in particular, water washing to which a rinsing liquid supply mechanism (an inlet nozzle and a two-fluid nozzle) which is a characteristic configuration of the present invention is applied. A processing unit is illustrated. It is a top view which shows a mode that arrangement | positioning of an inlet nozzle and 2 fluid nozzles, and a rinse liquid are discharged from an inlet nozzle and 2 fluid nozzles. It is a side view which shows a mode that arrangement | positioning of an inlet nozzle and a 2 fluid nozzle, and a rinse liquid are discharged from an inlet nozzle and a 2 fluid nozzle. It is a sectional side view which shows the schematic structure of the substrate processing apparatus which concerns on 2nd Embodiment, especially the rinse liquid supply mechanism (the water washing process part to which the inlet nozzle and the high pressure spray nozzle were applied) which is the characteristic structure of this invention is a figure. Show. (A) The figure which showed the 1st example of the discharge area | region in the substrate surface of the high pressure fluid nozzle discharged from the discharge port of the high pressure spray nozzle with which the substrate processing apparatus which concerns on 2nd Embodiment is equipped, and the said discharge port, b) is a view showing a second example of a discharge port of a high-pressure spray nozzle provided in the substrate processing apparatus according to the second embodiment and a discharge region on the substrate surface of the high-pressure fluid discharged from the discharge port.

Explanation of symbols

_1, 1 'substrate processing apparatus _10, 10' washing section 12 the processing chamber 20 inlet nozzle 21 two-fluid nozzle 21 'high pressure spray nozzles _R 1, _{R 2} rinsing fluid ejection region W substrate

Claims (5)

Located in a processing tank that performs a replacement process for replacing the processing liquid adhering to the surface of the substrate transported in a predetermined direction with a rinsing liquid, and downstream of the surface of the substrate being transported in the substrate transport direction Rinsing liquid supply means for supplying a rinsing liquid toward
2 provided in the processing tank on the downstream side of the substrate transport direction with respect to the rinsing liquid supply means, and made of gas and liquid with respect to the surface of the substrate over the entire width of the substrate intersecting the substrate transport direction. A substrate processing apparatus comprising two fluid supply means for supplying fluid. Located in a processing tank that performs a replacement process for replacing the processing liquid adhering to the surface of the substrate transported in a predetermined direction with a rinsing liquid, and downstream of the surface of the substrate being transported in the substrate transport direction Rinsing liquid supply means for supplying a rinsing liquid toward
A high-pressure fluid that is provided downstream of the rinsing liquid supply means in the processing tank and supplies a high-pressure fluid to the surface of the substrate over the entire width of the substrate that intersects the substrate conveyance direction. And a substrate processing apparatus.   The substrate processing apparatus according to claim 2, wherein the high-pressure fluid supply unit supplies a high-pressure liquid as the high-pressure fluid. In the processing tank that performs a replacement process that replaces the processing liquid adhering to the surface of the substrate transported in a predetermined direction with the rinsing liquid, the substrate surface being transported is directed downstream in the substrate transport direction. A first step of supplying a rinsing liquid;
From the gas and the liquid to the surface of the substrate over the entire width of the substrate intersecting the substrate transport direction on the downstream side of the substrate transport direction from the rinse liquid supply position in the first step in the processing tank. A substrate processing method comprising a second step of supplying two fluids. In the processing tank that performs a replacement process that replaces the processing liquid adhering to the surface of the substrate transported in a predetermined direction with the rinsing liquid, the substrate surface being transported is directed downstream in the substrate transport direction. A first step of supplying a rinsing liquid;
A high-pressure fluid is supplied to the surface of the substrate across the entire width of the substrate intersecting the substrate transport direction on the downstream side of the substrate transport direction from the rinse liquid supply position in the first step in the processing tank. A substrate processing method comprising the second step.

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